Patent application number | Description | Published |
20100193941 | SEMICONDUCTOR DEVICE - A semiconductor device includes an insulating substrate having a ceramic substrate and metal coating layers on opposite surfaces of the ceramic substrate, a semiconductor chip mounted on one surface of the insulating substrate, a heat sink directly or indirectly fixed to the other surface of the insulating substrate and thermally connected to the semiconductor chip through the insulating substrate and at least one anti-warping sheet disposed on at least one surface of the heat sink. The anti-warping sheet is made of a metal sheet having a coating layer and has coefficient of thermal expansion between those of the insulating substrate and the heat sink. | 08-05-2010 |
20110232316 | COOLING DEVICE - A cooling device includes a refrigerant inlet, a refrigerant outlet, a cooler including therein a refrigerant passage, an introduction tube communicating with the refrigerant inlet and a filter detachably disposed between the refrigerant inlet and the introduction tube. | 09-29-2011 |
20110235279 | COOLING DEVICE - A cooling device includes a heat sink having a top plate, a bottom plate spaced from the top plate and fins between the top and bottom plates, a first metal member laminated to the side of the top plate that is opposite from the fins, and a first insulator laminated to the first metal member. The top plate, the bottom plate and the first metal member are each made of a clad metal that is composed of a base metal and a brazing metal, so that the fins are brazed to the top and bottom plates, the first metal member is brazed to the top plate, and the first insulator is brazed to the first metal member. | 09-29-2011 |
20120126390 | SEMICONDUCTOR DEVICE - A semiconductor device is provided that may include an insulating substrate having a ceramic substrate and metal coating layers on opposite surfaces of the ceramic substrate, a semiconductor chip mounted on one surface of the insulating substrate, and a heat sink directly or indirectly fixed to the other surface of the insulating substrate and thermally connected to the semiconductor chip through the insulating substrate. The heat sink may include a housing that is made of a metal sheet and radiating fins that are fixed in the housing and made of aluminum. The metal sheet may have a coefficient of thermal expansion between those of the insulating substrate and the radiating fin. | 05-24-2012 |
20120175765 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed that includes an insulation substrate, a metal wiring layer, a semiconductor element, a heat sink, and a stress relaxation member located between the insulation substrate and the heat sink. The heat sink has a plurality of partitioning walls that extend in one direction and are arranged at intervals. The stress relaxation member includes a stress absorbing portion formed by through holes extending through the entire thickness of the stress relaxation member. Each hole is formed such that its dimension along the longitudinal direction of the partitioning walls is greater than its dimension along the arranging direction of the partitioning walls. | 07-12-2012 |
20120182692 | DOUBLE-SIDED SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME - A double-sided substrate includes a ceramic substrate, a first metal layer formed on one surface of the ceramic substrate and having a plurality of subsidiary metal layers which are laminated on the surface of the ceramic substrate and whose purities differ from each other and a second metal layer formed on the other surface of the ceramic substrate, wherein the closer to the ceramic substrate any subsidiary metal layer is located, the lower purity the subsidiary metal layer has. Additionally, a semiconductor includes the above double-sided substrate, a power element and a heat sink. | 07-19-2012 |
20120182695 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed that includes an insulation substrate, a metal wiring layer, a semiconductor element, a heat sink, and a stress relaxation member located between the insulation substrate and the heat sink. The heat sink has a plurality of partitioning walls that extend in one direction and are arranged at intervals. The stress relaxation member includes a stress absorbing portion formed by through holes extending through the entire thickness of the stress relaxation member. Each hole is formed such that its dimension along the longitudinal direction of the partitioning walls is greater than its dimension along the arranging direction of the partitioning walls. | 07-19-2012 |
20120267074 | COOLING DEVICE - A cooling device includes a base, first and second heat generating parts connected to the base, first and second passages formed in the base and a partition wall disposed in the base. Liquid refrigerant flows through the first and the second passages for cooling the first and the second heat generating parts, respectively. The first and the second passages are stacked one above the other through the partition wall in the base. The partition wall includes a first region opened to allow liquid refrigerant in the first passage to flow into the second passage and a second region located on the side of the first region to allow liquid refrigerant in the first passage to flow toward the downstream end of the first passage. The first region is formed such that an opening area of the first region is greater than an opening area of the first passage. | 10-25-2012 |
20140008781 | SEMICONDUCTOR UNIT - A semiconductor unit includes a first conductive layer, a second conductive layer electrically insulated from the first conductive layer, a first semiconductor device mounted on the first conductive layer, a second semiconductor device mounted on the second conductive layer, a first bus bar for electrical connection of the second semiconductor device to the first conductive layer, and a second bus bar for electrical connection of the first semiconductor device to one of the positive and negative terminals of a battery. The first bus bar is disposed in overlapping relation to the second bus bar in such a manner that mold resin fills between the first bus bar and the second bus bar. | 01-09-2014 |
20140008782 | SEMICONDUCTOR UNIT - A semiconductor unit includes a base having a surface where a first insulation layer is disposed, a second insulation layer spaced apart from the first insulation layer to form a region therebetween and disposed parallel to the surface of the base where the first insulation layer is disposed, a single conductive layer disposed across the first insulation layer and the second insulation layer, and a semiconductor device bonded to the conductive layer. | 01-09-2014 |
20140035120 | SEMICONDUCTOR UNIT - A semiconductor unit includes an insulation layer, a conductive layer bonded to one side of the insulation layer, a semiconductor device mounted on the conductive layer, a cooler thermally coupled to the other side of the insulation layer, a first bus bar having a bonding surface bonded to the semiconductor device or the conductive layer and a non-bonding surface that is the part of the first bus bar other than the bonding surface, and a second bus bar having a bonding surface bonded to the semiconductor device or the conductive layer and a non-bonding surface that is the part of the second bus bar other than the bonding surface. The second bus bar has a greater ratio of the area of the bonding surface to the area of the non-bonding surface than the first bus bar. The second bus bar has a lower electric resistance than the first bus bar. | 02-06-2014 |
20140090809 | COOLING DEVICE - A cooling device to which a heating element is joinable includes a base, a plurality of first groups of pin fins and a plurality of second groups of pin fins. The second groups and the first groups are arranged alternately in a flow direction in which a cooling medium flows through a passage of the base. A second outermost pin fin of each second group is more distant from a side surface of the base than a first outermost pin fin of each first group. Width between a side surface of the second outermost pin fin of each second group and the side surface of the base is the same as or larger than width between a side surface of the pin fin of each first group that is adjacent to the first outermost pin fin of the first group and the side surface of the second outermost pin fin. | 04-03-2014 |
20140091444 | SEMICONDUCTOR UNIT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor unit includes a base, an insulating substrate bonded to the base, a conductive plate made of a metal of poor solderability, a semiconductor device mounted to the insulating substrate through the conductive plate, and a metal plate interposed between the conductive plate and the semiconductor device and made of a metal of good solderability as compared to the metal used for the conductive plate. The base, the insulating substrate, the conductive plate and the metal plate are brazed together, and the semiconductor device is soldered to the metal plate. | 04-03-2014 |
20140117508 | SEMICONDUCTOR UNIT - A semiconductor unit includes an insulating substrate having a first surface and a second surface opposite to the first surface, a first conductive layer bonded to the first surface of the insulating substrate, a second conductive layer bonded to the first surface of the insulating substrate at a position different from that for the first conductive layer, a stress relief layer bonded to the second surface of the insulating substrate, a radiator bonded to the stress relief layer on the side thereof opposite to the insulating substrate, and semiconductor devices electrically bonded to the respective first and second conductive layers. The insulating substrate has a low-rigidity portion provided between the first and second conductive layers and having a lower rigidity than the rest of the insulating substrate, and at least the low-rigidity portion is sealed and covered by a mold resin. | 05-01-2014 |