Patent application number | Description | Published |
20090026457 | Active matrix substrate, method of making the substrate, and display device - An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line. | 01-29-2009 |
20100167443 | Active matrix substrate, method of making the substrate, and display device - An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line. | 07-01-2010 |
20100283950 | Liquid crystal display device - A liquid crystal display device includes a first substrate; a second substrate; a liquid crystal layer interposed between the first substrate and the second substrate; a first polarizer provided on a surface of the first substrate which is on the opposite side to the liquid crystal layer; a second polarizer provided on a surface of the second substrate which is on the opposite side to the liquid crystal layer; a first phase compensation element provided between the first polarizer and the liquid crystal layer; and a second phase compensation element provided between the second polarizer and the liquid crystal layer. A plurality of pixel areas are provided for display. The first substrate includes at least one transmissive electrode, and the second substrate includes a reflective electrode region and a transmissive electrode region in correspondence with each of the plurality of pixel areas. | 11-11-2010 |
20110003417 | Active matrix substrate, method of making the substrate, and display device - An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line. | 01-06-2011 |
20120013826 | Liquid crystal display device - A liquid crystal display device includes a first substrate; a second substrate; a liquid crystal layer interposed between the first substrate and the second substrate; a first polarizer provided on a surface of the first substrate which is on the opposite side to the liquid crystal layer; a second polarizer provided on a surface of the second substrate which is on the opposite side to the liquid crystal layer; a first phase compensation element provided between the first polarizer and the liquid crystal layer; and a second phase compensation element provided between the second polarizer and the liquid crystal layer. A plurality of pixel areas are provided for display. The first substrate includes at least one transmissive electrode, and the second substrate includes a reflective electrode region and a transmissive electrode region in correspondence with each of the plurality of pixel areas. | 01-19-2012 |
Patent application number | Description | Published |
20090065809 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device is provided in which a stress can be effectively applied from a semiconductor layer having a different lattice constant from a semiconductor substrate to a channel part, whereby carrier mobility can be improved and higher functionality can be achieved. In a semiconductor device | 03-12-2009 |
20090321820 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION OF SEMICONDUCTOR DEVICE - Disclosed herein is a semiconductor device including: a gate electrode formed in a recess dug in the surface of a semiconductor substrate, with a gate insulating film interposed between the gate electrode and the semiconductor substrate; a source-drain diffusion layer formed on that surface of the semiconductor substrate which is adjacent to both sides of the gate electrode; and a stress applying layer which is formed deep from the surface of the semiconductor substrate in such a way as to cover the surface of the source-drain diffusion layer. | 12-31-2009 |
20100102394 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - It is to enhance a current increasing effect by increasing a stress applied on a channel of a transistor. The invention is characterized by comprising: side wall insulating films | 04-29-2010 |
20100224759 | SOLID-STATE IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MANUFACTURING METHOD OF THE SOLID-STATE IMAGING DEVICE - Disclosed herein is a solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements. | 09-09-2010 |
20110189845 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device in which a stress can be effectively applied from a semiconductor layer having a different lattice constant from a semiconductor substrate to a channel part, whereby carrier mobility can be improved and higher functionality can be achieved. | 08-04-2011 |
20110234873 | SOLID-STATE IMAGE PICKUP ELEMENT AND IMAGE PICKUP APPARATUS - Disclosed herein is a solid-state image pickup element, including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type. | 09-29-2011 |
20110241079 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions. | 10-06-2011 |
20110241080 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging device, including a plurality of unit pixels, wherein the plurality of unit pixels include: a photoelectric conversion element; a first transfer gate; a charge retaining region; a second transfer gate; and a floating diffusion region; a boundary part between the photoelectric conversion element and the charge retaining region having a structure of an overflow path formed at a potential determining a predetermined amount of charge, the overflow path transferring a charge by which the predetermined amount of charge is exceeded as a signal charge from the photoelectric conversion element to the charge retaining region, and the first transfer gate having two electrodes with different work functions as gate electrodes arranged above the overflow path and above the charge retaining region, respectively. | 10-06-2011 |
20130001403 | IMAGING ELEMENT, DRIVE METHOD FOR IMAGING ELEMENT, MANUFACTURING METHOD FOR IMAGING ELEMENT, AND ELECTRONIC APPARATUS - An imaging element includes a plurality of pixels. Each of the plurality of pixels includes the following element. A photoelectric transducer is disposed in each of the plurality of pixels and is configured to generate electric charge corresponding to received light. A storage unit has a predetermined capacitance and is configured to store therein electric charge transferred from the photoelectric transducer. A capacitor is disposed separate from a silicon substrate with an interlayer insulating film therebetween, the photoelectric transducer and the storage unit being formed in the silicon substrate. A connecting unit is disposed separate from the silicon substrate with the interlayer insulating film therebetween and is configured to connect the storage unit and the capacitor. | 01-03-2013 |
20130099094 | SOLID-STATE IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MANUFACTURING METHOD OF THE SOLID-STATE IMAGING DEVICE - A solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements. | 04-25-2013 |
20140299954 | SOLID-STATE IMAGE PICKUP ELEMENT AND IMAGE PICKUP APPARATUS - Disclosed herein is a solid-state image pickup element, including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type. | 10-09-2014 |