Shinya Sato
Shinya Sato, Chofu-Shi JP
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20100133678 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a plurality of semiconductor substrates that are layered; a through electrode penetrating through a predetermined semiconductor substrate of the semiconductor substrates and electrically connected with an external terminal of the semiconductor device; a circuit element provided on the predetermined semiconductor substrate; and an electrostatic discharge protection circuit also provided on the predetermined semiconductor substrate. In the device, wiring resistance between the electrostatic discharge protection circuit and the through electrode is smaller than wiring resistance between the circuit element and the through electrode. | 06-03-2010 |
20100133701 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a plurality of external terminals; a plurality of semiconductor substrates that are layered; a through electrode penetrating through at least one of the semiconductor substrates and electrically connected with any of the external terminals; and a plurality of electrostatic discharge protection circuits provided on any one of the semiconductor substrates. In the device, the through electrode is electrically connected with the plurality of electrostatic discharge protection circuits. | 06-03-2010 |
Shinya Sato, Miyagi JP
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20100046563 | Multibeam laser diode - A multibeam laser diode capable of improving heat release characteristics in the case of junction-down assembly is provided. Contact electrodes are provided respectively for protruding streaks of a laser diode device, and pad electrodes are provided to avoid the protruding streaks and the contact electrodes. The contact electrodes and the pad electrodes are connected by wiring electrodes, and the contact electrodes are covered with a first insulating film. Thereby, electric connection is enabled without straightly jointing the contact electrodes to a solder layer. A heat conduction layer configured of a metal is provided on the first insulating film, the heat conduction layer is jointed to the solder layer, and thereby the heat release characteristics are able to be improved even in the case of junction-down assembly. | 02-25-2010 |
Shinya Sato, Higashine JP
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20080292909 | MAGNETIC RECORDING MEDIUM AND MAGNETIC STORAGE APPARATUS - This magnetic recording medium has a substrate, a nonmagnetic granular layer formed above the substrate and a recording layer formed on the nonmagnetic granular layer. The nonmagnetic granular layer is made of CoCr alloy with an hcp or an fcc crystal structure in which a nonmagnetic material segregates virtually-columnar magnetic grains. The magnetic recording medium and the magnetic storage apparatus in which the medium is used have improved reading/writing performances. | 11-27-2008 |
20090109579 | MAGNETIC RECORDING MEDIUM, MANUFACTURING METHOD THEREOF AND MAGNETIC STORAGE APPARATUS - A magnetic recording medium has a substrate, a first granular layer formed on the substrate, the first granular layer having a plurality of a first magnetic grains and a first oxide for separating the plurality of first magnetic grains from one another. A non-magnetic layer is formed on the first granular layer. The second granular layer is formed on the non-magnetic layer which has a plurality of second magnetic grains and a second oxide for separating the plurality of second magnetic grains from one another. The anisotropic magnetic field of the first granular layer is more intensive than that of the second granular layer. | 04-30-2009 |
20090110961 | MAGNETIC RECORDING MEDIUM, METHOD OF MANUFACTURING THE SAME, AND MAGNETIC STORAGE DEVICE - A magnetic recording medium used for a hard disc drive and the like, a method of manufacturing the same, and a magnetic storage device. The magnetic recording medium that includes a substrate, a first ferromagnetic layer formed on the substrate, a non-magnetic layer formed on the first ferromagnetic layer and including a ferromagnetic element and a second ferromagnetic layer formed on the non-magnetic layer, wherein the first ferromagnetic layer and the second ferromagnetic layer are magnetically coupled through the non-magnetic layer. | 04-30-2009 |
20090142624 | MAGNETIC RECORDING MEDIUM AND A METHOD OF PRODUCING THE SAME - A method of producing a magnetic recording medium produces a medium having a magnetic recording layer disposed above a nonmagnetic intermediate layer, The nonmagnetic intermediate layer is formed by a sputtering using a target made of an oxide material. Oxygen gas or carbon dioxide gas is supplied during the sputtering in order to suppress a state where an oxygen supply becomes insufficient due to separation of oxygen atoms from the oxide material at a time of plasma generation. | 06-04-2009 |
20090183985 | METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM - One aspect of the embodiments utilizes, according to an aspect of the invention, a method of manufacturing a magnetic recording medium, which includes an intermediate layer and a granular magnetic layer as a recording layer sequentially formed on a non-magnetic substrate, includes the steps of forming the intermediate layer and forming the granular magnetic layer. The granular magnetic layer includes a plurality of magnetic particles made of a Co alloy and an oxide magnetically separating the plurality of magnetic particles by a sputtering method using a target. The target includes a Co alloy, one or more first oxides selected from a group of oxides of Si, Ti, Ta, Cr, W, and Nb, and a second oxide composed of a Co oxide. | 07-23-2009 |
20100007988 | MAGNETIC RECORDING MEDIUM AND INFORMATION STORAGE APPARATUS - A magnetic recording medium includes a nonmagnetic granular layer that has a granular structure in which a plurality of nonmagnetic grains made of a nonmagnetic material are separated from one another by a Cr oxide. The magnetic recording medium further includes a magnetic granular layer that is formed on the nonmagnetic granular layer and has a granular structure in which a plurality of magnetic grains made of a magnetic material are separated from one another by a nonmagnetic material. | 01-14-2010 |
Shinya Sato, Tokyo-To JP
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20100008170 | Semiconductor tester and testing method of semiconductor memory - The disclosure concerns a semiconductor tester for testing a memory under test. The semiconductor tester comprises a pattern generator generating address information on the pages and generating a test pattern; a waveform shaper shaping the test pattern and outputting a test signal based on the shaped test pattern to the memory cells in the page identified by the address information; a comparator comparing a result signal output from the memory under test receiving the test signal with an expectation value; and a bad block memory storing information on a bad block in the memory under test in advance, when the page identified by the address information is included in the bad block, the bad block memory outputting a bad signal used to skip from the address information on the page included in the bad block to the address information on the page included in a next block under test. | 01-14-2010 |
20130182301 | VOLUME HOLOGRAM TRANSFER FOIL - A primary object of the invention is to provide a volume hologram transfer foil which has good foil cutting characteristics and is used to manufacture a volume hologram laminate by transferring a volume hologram layer to an adherend by thermocompression. The above problem is solved by a volume hologram transfer foil comprising a base material, a protective layer formed on the base material, a volume hologram layer formed on the protective layer and having a volume hologram recorded, and a heat seal layer formed on the volume hologram layer, wherein the protective layer contains a hard coat component formed of an ionizing radiation-curable resin, a rupture elongation control component which improves the rupture elongation of the protective layer, and a foil cutting characteristic control component which has a thermal expansion coefficient different from those of the hard coat component and rupture elongation control component and is incompatible with the two components. | 07-18-2013 |
Shinya Sato, Muroran-Shi JP
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20090280024 | NI-BASED CORROSION RESISTANT ALLOY AND CORROSION RESISTANT MEMBER FOR SUPERCRITICAL AMMONIA REACTOR MADE OF THE ALLOY - The invention intends to provide a material that exhibits excellent corrosion resistance to supercritical ammonia and is suitable for a supercritical ammonia reactor. | 11-12-2009 |
Shinya Sato, Aizuwakamatsu-Shi JP
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20090014669 | Semiconductor relay - The semiconductor relay comprises: an insulated type DC/DC power supply | 01-15-2009 |
Shinya Sato, Suwa-Shi JP
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20080252634 | Integrated circuit device and electronic instrument - An integrated circuit device includes a first circuit block that includes low-voltage transistors (LVTr) and operates using a first high-potential power supply voltage and a first low-potential power supply voltage, a second circuit block that includes low-voltage transistors (LVTr) and operates using a second high-potential power supply voltage and a second low-potential power supply voltage that differ in power supply system from the first circuit block, and an interface circuit (I/O buffer) provided between the first circuit block and the second circuit block. The interface circuit (I/O buffer) includes medium-voltage transistors (MVTr: transistors of which the thickness of the gate insulating film is larger than that of the low-voltage transistors (LVTr)). An electrostatic discharge protection circuit formed of bidirectional diodes is provided between a first and second low-potential power supply nodes. | 10-16-2008 |
20080253045 | Integrated circuit device and electronic instrument - An interface circuit is provided between a first circuit block and a second circuit block that operates using a power supply system differing from that of the first circuit block. An electrostatic discharge protection circuit that include a PN diode and a diffused resistor is formed in order to prevent electrostatic discharge destruction of a gate insulating film of a transistor that forms the interface circuit. The electrostatic discharge protection circuit may be formed using the remaining basic cells of a gate array that forms the second circuit block. An electrostatic discharge protection circuit formed of a bidirectional diode may be connected between a first low-potential power supply and a second low-potential power supply. | 10-16-2008 |
Shinya Sato, Hyogo-Ken JP
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20110169081 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The first semiconductor layer is formed with a trench. The second semiconductor layer is buried in the trench, and includes a hollow portion. A length of the hollow portion along depth direction of the trench is 5 μm or less or 15 μm or more. | 07-14-2011 |
20140283748 | SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR WAFER HOLDER - A semiconductor manufacturing apparatus includes a chamber, a reaction-gas inlet, a gas exhaust port, a rotation unit, a semiconductor wafer holder, a heater, and a purge-gas inlet. The wafer holder includes a first hold region to hold the semiconductor wafer and a second hold region held by the rotation unit. The second hold region surrounds the first hold region. The level of the first hold region and the level of the second hold region differ. A plurality of ventholes is provided to the first hold region so that the ventholes are just below a sidewall of the semiconductor wafer held by the first hold region. | 09-25-2014 |
Shinya Sato, Hitachinaka-Shi JP
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20120022735 | DRIVE CONTROL DEVICE FOR ELECTRIC VEHICLE, AND ELECTRIC VEHICLE - A drive control device for an electric vehicle that is driven by a motor-generator, includes: a detection unit that detects a fact that an accelerator pedal depression amount and a brake pedal depression amount of the electric vehicle are both zero; and a control unit that sets a regenerative braking torque command value for the motor-generator to zero, while the detection unit is detecting the fact. | 01-26-2012 |
20120123624 | Running Control Device for Electric Vehicle - A running control device for an electric vehicle includes: a first calculation unit that calculates a predetermined reference torque required for braking/driving the motor that provides a beneficial effect with regard to power consumption of the electric vehicle; a second calculation unit that calculates interval allocation between a first interval in which the electric vehicle is propelled by braking/driving the motor at the predetermined reference torque and a second interval in which the electric vehicle is coasted without the motor being braked or driven; a third calculation unit that calculates a control requested torque for braking/driving the motor intermittently, so as alternatingly to repeat running of the electric vehicle in the first intervals and coasting of the electric vehicle in the second intervals; and a running control unit that performs running control of the electric vehicle by braking/driving the motor intermittently according to the control requested torque. | 05-17-2012 |
20120306263 | Control Device for Electrically Powered Vehicle - A control device for an electrically powered vehicle, mounted to the electrically powered vehicle, includes: a current control element that takes off a charging current to be supplied to a low voltage battery in order to charge up the low voltage battery from an output current on the low voltage battery side of a voltage conversion device that performs voltage conversion between voltage of a high voltage battery and voltage of the low voltage battery; and an integrated control unit that determines a charging current value for the charging current based upon accumulated power information related to power accumulated in the low voltage battery and conversion efficiency of the voltage conversion by the voltage conversion device, and that controls the current control element so as to take off the charging current specified by the charging current value with the current control element. | 12-06-2012 |
Shinya Sato, Kariya-Shi JP
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20120314375 | HEAT RELEASE DEVICE - A heat release device is for use with a multilayer board that has an inner layer serving as a power layer. The heat release device includes a heat release member thermally and electrically connected to the power layer, and a heat release board having a heat release layer and a shield layer electrically insulated from each other. The heat release layer is thermally and electrically connected to the heat release member. The shield layer serves to shield against electromagnetic noise radiated from the heat release layer. The shield layer is electrically insulated from the heat release member connected to the heat release layer. The heat release device also includes an electrically conductive member electrically connected to the shield layer and grounded, and an insulator through which the heat release layer is thermally connected to the electrically conductive member. | 12-13-2012 |
Shinya Sato, Nagasaki-Shi JP
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20130032185 | CANE TIP AND CANE - Provided is a cane tip which is difficult to slip, exhibiting excellent shock absorbing properties when contacted with the ground; with which the cane tip will not stick in a crevice of a stone pavement; and further, with which the influence of the supporting surface inclination can be suppressed, whereby the walking stability is assured also for an aged user; and which is also well suited for use in rehabilitation. Cane tip has a cane tip main body with leg segments radially extending from a central part, being arranged in an overall shape substantially analogous to that of the five petals of a five-petaled flower, the central part and each leg segment having an elastic structure part exerting an elastic action, a bolt inserting hole in the central part of the elastic structure part, and a bolt inserted into this bolt hole and protruded from that central part. | 02-07-2013 |
Shinya Sato, Fukuyama-Shi JP
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20130143229 | REAGENT FOR ASSAYING ANTI-TREPONEMA PALLIDUM ANTIBODY - To provide a reagent for assaying anti- | 06-06-2013 |
Shinya Sato, Hyogo JP
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20140111935 | INFORMATION PROCESSING DEVICE - An information processing device includes a sensor section configured to detect a change in an attitude of a housing, a cooling fan configured to cool the housing, and a fan control circuit configured to control rotation of the cooling fan. When a change in the attitude of the housing has been detected by the sensor section, the fan control circuit stops the rotation of the cooling fan or decreases the number of rotation of the cooling fan to be lower than that in an ordinary operation. Thereafter, when a change in the attitude of the housing is no longer detected by the sensor section, the fan control circuit returns the rotation of the cooling fan to that in the ordinary operation. | 04-24-2014 |
Shinya Sato, Matsumoto-Shi JP
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20130204572 | STATE DETECTION DEVICE, ELECTRONIC APPARATUS, AND PROGRAM - A state detection device includes a horizontal direction component extracting unit that obtains a horizontal direction component of acceleration detected by an acceleration sensor and a movement direction calculating unit that calculates a movement direction on the basis of the horizontal direction component. The movement direction calculating unit performs a process of extracting a DC component for movement direction information which is obtained on the basis of the horizontal direction component to calculate the movement direction. | 08-08-2013 |
Shinya Sato, Osaka JP
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20130139621 | PUSH & LOCK UNIT AND INPUT DEVICE USING THE SAME - A push & lock unit includes cam sections mounted on an outer wall of a rotary body that is disposed on an underside of an operating body, and each one of the cam sections contacts a saw-tooth section disposed on a lower end of a rib on an inner wall of a cover and a projection disposed at a bottom center of a housing in response to an up and down movement of the operating body, whereby the rotary body is rotated. When the operating body is pushed, a push face thereof is locked at a position almost flush with an outer face of a panel. When the operating body is pushed once more, it is released from the lock, and restores to a state where the operating body projects from the outer face of the panel. | 06-06-2013 |
20150348710 | CASE-MOLD-TYPE CAPACITOR AND METHOD FOR PRODUCING SAME - A case-mold-type capacitor includes a capacitor element, first and second bus bars connected to the first and second electrodes of the capacitor element, a case accommodating the capacitor element and the first and second bus bars, and a mold resin filling the case therein. The case has a cutaway portion provided therein. A sealing plate joined to the case so as to seal the cutaway portion. The first and second bus bars pass through the sealing plate and are fixed to the sealing plate. The case-mold-type capacitor improves dimensional accuracy between terminal portions of the first and second bus bars without increasing material cost, and has high reliability. | 12-03-2015 |
Shinya Sato, Hitachinaka JP
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20130103240 | Battery Temperature Control Device - A battery temperature control device for an electric vehicle is provided which is capable of maintaining both the range of the electric vehicle and the battery life at a high level without drastically reducing either of them. A recommended temperature range suitable for battery use and a usable temperature range in which a battery is usable and which is wider than the recommended temperature range are included, and while the battery temperature is basically controlled to converge to the recommended temperature range to maintain the battery life, in a situation where the power consumption necessary for controlling the battery temperature to converge to the recommended temperature is increased, making it difficult to travel a desired travelling distance, the recommended temperature range is switched to the usable temperature range and the battery temperature is controlled to converge to the usable temperature range, and the power consumption necessary for controlling the battery temperature is suppressed and the range of the vehicle is maintained. | 04-25-2013 |
Shinya Sato, Hino-Shi JP
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20140260208 | EXHAUST GAS PURIFIER - A first selective reduction catalyst including a silver-based catalyst is provided in an exhaust pipe of an engine. An ozone generation device generates ozone by using oxygen in the atmosphere, and a hydrocarbon-based liquid supply device supplies a hydrocarbon-based liquid. A part of NO in the exhaust gas flowing through the exhaust pipe is oxidized to NO | 09-18-2014 |
Shinya Sato, Nagano JP
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20140360633 | ALUMINUM PRODUCT MANUFACTURING METHOD USING DIE CASTING AND ALUMINUM BRAKE CALIPER MANUFACTURING METHOD USING THE SAME - There are provided a method of manufacturing an aluminum product and a method of manufacturing an aluminum brake caliper each using die casting, for improving flow and run of molten metal during casting and enhancing productivity and quality. In a method of manufacturing an aluminum product provided with opposing portions opposed to each other with a hollow portion interposed in between, and connecting portions connecting the opposing portions at two sides thereof, the method includes a die casting step of performing casting by pouring molten metal of an aluminum alloy from a gate for the molten metal formed in one of the opposing portions via the connecting portions and a bridge connecting the two opposing portions, and a bridge removing step of removing the bridge. | 12-11-2014 |
Shinya Sato, Ishikawa JP
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20150076589 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment has a first conductive type first semiconductor layer, a second conductive type second semiconductor layer provided in the first semiconductor layer having a first lateral surface and a first bottom portion contacting the first semiconductor layer. The second semiconductor layer has a first void portion inside. A second conductive type impurity concentration decreases from the first lateral surface toward the first void portion. And the device has a second conductive type third semiconductor layer provided in the first semiconductor layer such that the first semiconductor layer is sandwiched between the third semiconductor layer and the second semiconductor layer. The third semiconductor layer has a second lateral surface and a second bottom portion contacting the first semiconductor layer. The third semiconductor layer has a second void portion inside. A second conductive type impurity concentration decreases from the second lateral surface toward the second void portion. | 03-19-2015 |
Shinya Sato, Kumamoto JP
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20150102448 | IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - Provided is an image pickup device, including: a first trench provided between a plurality of pixels in a light-receiving region of a semiconductor substrate, the semiconductor substrate including the light-receiving region and a peripheral region, the light-receiving region being provided with the plurality of pixels each including a photoelectric conversion section; and a second trench provided in the peripheral region of the semiconductor substrate, wherein the semiconductor substrate has a variation in thickness between a portion where the first trench is provided and a portion where the second trench is provided. | 04-16-2015 |
Shinya Sato, Hokkaido JP
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20150225827 | NI-BASED ALLOY HAVING EXCELLENT HYDROGEN EMBRITTLEMENT RESISTANCE, AND METHOD FOR PRODUCING NI-BASED ALLOY MATERIAL - An object is to provide a Ni-based alloy having high strength and excellent hydrogen embrittlement resistance even in a high-temperature and high-pressure environment and particularly capable of being used for an ammonothermal pressure vessel and the like. The present invention relates to a Ni-based alloy including, in terms of mass ratios, Fe: 30 to 40%, Cr: 14 to 16%, Ti: 1.2 to 1.7%, Al: 1.1 to 1.5%, Nb: 1.9 to 2.7%, and P: 40 to 150 ppm, with the remainder being Ni and unavoidable impurities. | 08-13-2015 |
Shinya Sato, Chiyoda-Ku JP
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20150267319 | SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING SAME - Provided are: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method; and a process for producing the same. The number of screw dislocations in one of the semicircle areas of the substrate is smaller than that in the other thereof, namely, the number of screw dislocations in a given area of the substrate is reduced. The semicircle areas of the substrate correspond respectively to the halves of the substrate. The present invention pertains to: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method and which is characterized in that the average value of the screw-dislocation densities observed at multiple measurement points in one of the semicircle areas, which correspond respectively to the halves of the substrate, is 80% or less of the average value of screw-dislocation densities observed at multiple measurement points in the other of the semicircle areas; and a process for producing the same. | 09-24-2015 |
Shinya Sato, Muroran-Shi, Hokkaido JP
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20150354039 | FE-NI-BASED ALLOY HAVING EXCELLENT HIGH-TEMPERATURE CHARACTERISTICS AND HYDROGEN EMBRITTLEMENT RESISTANCE CHARACTERISTICS, AND METHOD FOR PRODUCING THE SAME - The present invention relates to an Fe—Ni-based alloy having excellent high-temperature characteristics and hydrogen embrittlement resistance, which has a composition containing, in terms of % by mass, C: 0.005% to 0.10%, Si: 0.01% to 0.10%, P: 0.015% or less, S: 0.003% or less, Ni: 23.0% to 27.0%, Cr: 12.0% to 16.0%, Mo: 0.01% or less, Nb: 0.01% or less, W: 2.5% to 6.0%, Al: 1.5% to 2.5%, and Ti: 1.5% to 2.5%, the balance being Fe and other unavoidable impurities. | 12-10-2015 |