Patent application number | Description | Published |
20130143374 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR GROWING GRAPHENE - A catalyst film ( | 06-06-2013 |
20140106514 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR GROWING GRAPHENE - A catalyst film ( | 04-17-2014 |
20140141581 | METHOD OF MANUFACTURING GRAPHENE NANOMESH AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Particles having a property of absorbing carbon at a particular temperature or higher are deposited on a graphene. The particles are heated to a temperature equal to the particular temperature or higher to make the particles absorb carbon from portions of the graphene under the particles. The particles are removed. Consequently, a graphene nanomesh is obtained. | 05-22-2014 |
20150144884 | GRAPHENE FILM, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - A reliable graphene film that provides complete semiconductive properties without mixing of metallic properties, redacts an off current, achieves a high current on/off ratio of 10 | 05-28-2015 |
20150235960 | WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A wiring structure is made up by electrically connecting a via part made up by forming CNTs in a via hole and a wiring part made up of multilayer graphene on an interlayer insulating film via a metal block such as Cu. In the wiring structure using the CNTs at the via part and the graphene at the wiring part, it is thereby possible to obtain the wiring structure with high reliability enabling a certain electrical connection between the CNTs and the graphene with a relatively simple configuration. | 08-20-2015 |
20150279747 | SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A method manufactures a semiconductor device which allows nanocarbon materials, such as high-quality graphene and carbon nanotube to be used. The method of manufacturing the semiconductor device comprises forming on a substrate a wiring structure including wires of nanocarbon material; forming on the wiring structure an element structure including a semiconductor element; and interconnecting the wires of the wiring structure and the semiconductor element of the element structure. | 10-01-2015 |
20150280012 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A transistor includes a channel layer in which a plurality of graphene whose edge portions are terminated with modifying groups different from each other are bonded to each other; a gate electrode formed on the channel layer via a gate insulating film; and a source electrode and a drain electrode formed on the channel layer. | 10-01-2015 |