Patent application number | Description | Published |
20080299375 | ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate | 12-04-2008 |
20090087645 | Method for Manufacturing Aluminum Nitride Crystal, Aluminum Nitride Crystal, Aluminum Nitride Crystal Substrate and Semiconductor Device - Affords methods of manufacturing AlN crystals, and AlN crystals, AlN crystal substrates, and semiconductor devices fabricated employing the AlN crystal substrates, that enable semiconductor devices having advantageous properties to be obtained. One aspect of the present invention is an AlN crystal manufacturing method including a step of growing AlN crystal onto the surface of a SiC seed-crystal substrate, and a step of picking out at least a portion of the AlN crystal lying a range of from 2 mm to 60 mm from the SiC seed-crystal substrate surface into the AlN crystal. Furthermore, other aspects are AlN crystals and AlN crystal substrates manufactured by the method, and semiconductor devices fabricated employing the AlN crystal substrates. | 04-02-2009 |
20090140287 | III Nitride Crystal Substrate, and Light-Emitting Device and Method of Its Manufacture - Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates and methods of manufacturing the light-emitting devices, a III nitride crystal substrate has a major face whose surface area is not less than 10 cm | 06-04-2009 |
20090208749 | Group III Nitride Single Crystal and Method of Its Growth - Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal ( | 08-20-2009 |
20090267190 | Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate - Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5×10 | 10-29-2009 |
20090298265 | Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device - Affords III-nitride crystals having a major surface whose variance in crystallographic plane orientation with respect to an {hkil} plane chosen exclusive of the {0001} form is minimal. A method of manufacturing the III-nitride crystal is one of: conditioning a plurality of crystal plates ( | 12-03-2009 |
20100139553 | Method of Growing III-Nitride Crystal - Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal ( | 06-10-2010 |
20100147211 | -Nitride Single-Crystal Growth Method - This III-nitride single-crystal growth method, being a method of growing a Al | 06-17-2010 |
20100189624 | GROUP III NITRIDE CRYSTAL AND METHOD OF ITS GROWTH - Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×10 | 07-29-2010 |
20100221539 | AlN Crystal and Method for Growing the Same, and AlN Crystal Substrate - Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal ( | 09-02-2010 |
20100229786 | Method for Growing Group III Nitride Crystal - A III-nitride crystal growth method that enables growing large-scale crystal under a liquid-phase technique is made available. The present III-nitride crystal growth method is a method of growing III-nitride crystal ( | 09-16-2010 |
20100314625 | GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture - Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass | 12-16-2010 |
20110057197 | GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THEREOF AND GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A GaN single crystal substrate has a main surface with an area of not less than 10 cm | 03-10-2011 |
20110108852 | GaN SUBSTRATE AND LIGHT-EMITTING DEVICE - The present GaN substrate can have an absorption coefficient not lower than 7 cm | 05-12-2011 |
20110175107 | SILICON CARBIDE SUBSTRATE - A base portion is made of silicon carbide and has a main surface. At least one silicon carbide layer is provided on the main surface of the base portion in a manner exposing a region of the main surface along an outer edge of the main surface. At least one protection layer is provided on this region of the main surface of the base portion along the outer edge of the main surface. Thus, a silicon carbide substrate can be polished with high in-plane uniformity. | 07-21-2011 |
20110175108 | LIGHT-EMITTING DEVICE - A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high. | 07-21-2011 |
20110215440 | Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device - Affords III-nitride crystals having a major surface whose variance in crystallographic plane orientation with respect to an {hkil} plane chosen exclusive of the { | 09-08-2011 |
20110315998 | EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE, GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND GALLIUM OXIDE WAFER - A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base | 12-29-2011 |
20120003770 | METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S | 01-05-2012 |
20120031324 | METHOD FOR GROWING GROUP III NITRIDE CRYSTAL - The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates. A method for growing a group III nitride crystal includes a step of preparing a plurality of tile substrates | 02-09-2012 |
20120034149 | GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME - The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×10 | 02-09-2012 |
20120056201 | INSULATED GATE BIPOLAR TRANSISTOR - An IGBT, which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate, a drift layer, a well region, an n | 03-08-2012 |
20120056202 | SEMICONDUCTOR DEVICE - A MOSFET, which is a semiconductor device allowing for reduced on-resistance while restraining stacking faults from being produced due to heat treatment in a device manufacturing process, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source contact electrode disposed on the active layer; and a drain electrode formed on the other main surface of the silicon carbide substrate. The silicon carbide substrate includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. Further, the base layer has an impurity concentration greater than 2×10 | 03-08-2012 |
20120056203 | SEMICONDUCTOR DEVICE - A JFET, which is a semiconductor device allowing for reduced manufacturing cost, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source electrode disposed on the active layer; and a drain electrode formed on the active layer and separated from the source electrode. The silicon carbide substrate includes: a base layer made of single-crystal silicon carbide, and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. The SiC layer has a defect density smaller than that of the base layer. | 03-08-2012 |
20120070962 | Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate - Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5×10 | 03-22-2012 |
20120074403 | METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE - The present invention is to provide GaN crystal growing method for growing a GaN crystal with few stacking faults on a GaN seed crystal substrate having a main surface inclined at an angle of 20° to 90° from the (0001) plane, and also to provide a GaN crystal substrate with few stacking faults. A method for growing a GaN crystal includes the steps of preparing a GaN seed crystal substrate | 03-29-2012 |
20120118222 | METHOD OF MANUFACTURING GaN-BASED FILM - A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 1.0 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided. | 05-17-2012 |
20120118226 | Method of Synthesizing Nitride Semiconductor Single-Crystal Substrate - Fracture toughness of AlGaN single-crystal substrate is improved and its absorption coefficient reduced. A nitride semiconductor single-crystal substrate has a composition represented by the formula Al | 05-17-2012 |
20120122301 | METHOD OF MANUFACTURING GaN-BASED FILM - A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided. | 05-17-2012 |
20120164058 | METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRIDE WAFER - There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal | 06-28-2012 |
20120241741 | SILICON CARBIDE SUBSTRATE - A first single crystal substrate has a first side surface and it is composed of silicon carbide. A second single crystal substrate has a second side surface opposed to the first side surface and it is composed of silicon carbide. A bonding portion connects the first and second side surfaces to each other between the first and second side surfaces, and it is composed of silicon carbide. At least a part of the bonding portion has polycrystalline structure. Thus, a large-sized silicon carbide substrate allowing manufacturing of a semiconductor device with high yield can be provided. | 09-27-2012 |
20120244307 | SILICON CARBIDE SUBSTRATE - A silicon carbide substrate includes: a base substrate having a diameter of 70 mm or greater; and a plurality of SiC substrates made of single-crystal silicon carbide and arranged side by side on the base substrate when viewed in a planar view. In other words, the plurality of SiC substrates are arranged side by side on and along the main surface of the base substrate. Further, each of the SiC substrates has a main surface opposite to the base substrate and having an off angle of 20° or smaller relative to a {0001} plane. | 09-27-2012 |
20120308758 | SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND METHOD FOR FABRICATING SILICON CARBIDE CRYSTAL INGOT - A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×10 | 12-06-2012 |
20120315427 | SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×10 | 12-13-2012 |
20120319125 | SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A first single crystal substrate has a first side surface and it is composed of silicon carbide. A second single crystal substrate has a second side surface opposed to the first side surface and it is composed of silicon carbide. A bonding portion connects the first and second side surfaces to each other between the first and second side surfaces. At least a part of the bonding portion is made of particles composed of silicon carbide and having a maximum length not greater than 1 μm. | 12-20-2012 |
20120325196 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide, obtaining a silicon carbide substrate by cutting the ingot, and forming a chamfer portion in a region including an outer peripheral surface of the silicon carbide substrate. In the step of obtaining the silicon carbide substrate, the ingot is cut such that a main surface of the silicon carbide substrate forms an angle of not less than 10° with respect to a {0001} plane. | 12-27-2012 |
20120329245 | Group III Nitride Crystal and Method for Producing the Same - A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates | 12-27-2012 |
20130026497 | SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD AND SILICON CARBIDE SUBSTRATE - Silicon carbide single crystal is prepared. Using the silicon carbide single crystal as a material, a silicon carbide substrate having a first face and a second face located at a side opposite to the first face is formed. In the formation of the silicon carbide substrate, a first processed damage layer and a second processed damage layer are formed at the first face and second face, respectively. The first face is polished such that at least a portion of the first processed damage layer is removed and the surface roughness of the first face becomes less than or equal to 5 nm. At least a portion of the second processed damage layer is removed while maintaining the surface roughness of the second plane greater than or equal to 10 nm. | 01-31-2013 |
20130040442 | METHOD OF MANUFACTURING GaN-BASED FILM - The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided. | 02-14-2013 |
20130056752 | SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - An edge region has a width of 5 mm. A valid region is surrounded by the edge region, and has an area greater than or equal to 100 cm | 03-07-2013 |
20130061801 | METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL - Provided is a method for manufacturing a silicon carbide crystal, including the steps of: placing a seed substrate and a source material for the silicon carbide crystal within a growth container; and growing the silicon carbide crystal with a diameter of more than 4 inches on a surface of the seed substrate by a sublimation method, in the step of growing, a pressure within the growth container being changed from a predetermined pressure, at a predetermined change rate. | 03-14-2013 |
20130071643 | SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe density of not more than 7 cm | 03-21-2013 |
20130105858 | PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER | 05-02-2013 |
20130149847 | METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED THEREFOR - The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided. | 06-13-2013 |
20130161646 | SEMICONDUCTOR SUBSTRATE - A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×10 | 06-27-2013 |
20130161647 | INGOT, SUBSTRATE, AND SUBSTRATE GROUP - An ingot, a substrate, and a substrate group are obtained each of which is made of silicon carbide and is capable of suppressing variation of characteristics of semiconductor devices. The ingot is made of single-crystal silicon carbide, and has p type impurity. The ingot has a thickness of 10 mm or greater in a growth direction thereof. Further, the ingot has an average carrier density of 1×10 | 06-27-2013 |
20130239881 | METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SINGLE-CRYSTAL - A method for manufacturing a silicon carbide single-crystal having a diameter of more than 100 mm and a maximum height of 20 mm or more using a sublimation method includes the following steps. That is, there are prepared a seed substrate made of silicon carbide and a silicon carbide source material. By sublimating the silicon carbide source material, the silicon carbide single-crystal is grown on a growth surface of the seed substrate. In the step of growing the silicon carbide single-crystal, a first carbon member provided at a position facing a side wall of the seed substrate is etched at a rate of 0.1 mm/hour or less. By suppressing a change in growth condition for the silicon carbide single-crystal in the crucible, there can be provided a method for manufacturing a silicon carbide single-crystal so as to stably grow the silicon carbide single-crystal. | 09-19-2013 |
20130255568 | METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL - A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation includes the following steps. A seed substrate made of silicon carbide and silicon carbide raw material are prepared. Silicon carbide single crystal is grown on the growth face of the seed substrate by sublimating the silicon carbide raw material. In the step of growing silicon carbide single crystal, the maximum growing rate of the silicon carbide single crystal growing on the growth face of the seed substrate is greater than the maximum growing rate of the silicon carbide crystal growing on the surface of the silicon carbide raw material. Thus, there can be provided a method for manufacturing silicon carbide single crystal allowing a thick silicon carbide single crystal film to be obtained, when silicon carbide single crystal having a diameter larger than 100 mm is grown. | 10-03-2013 |
20130337632 | Method for Producing Group III Nitride Crystal - A method for producing a Group III nitride crystal includes the steps of cutting a plurality of Group III nitride crystal substrates | 12-19-2013 |
20130341633 | Semiconductor Device - Provided is a semiconductor device comprising: a GaN crystal substrate defining a principal, (0001) Ga face and defining a matrix, being a majority, polarity-determining domain of the GaN crystal, and inversion domains, being domains in which the polarity in the GaN crystal's [0001] direction is inverted with respect to the matrix, the GaN substrate having a ratio S | 12-26-2013 |
20130341672 | III Nitride Crystal Substrate and Light-Emitting Device - Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates, a III nitride crystal substrate has a major face whose surface area is not less than 10 cm | 12-26-2013 |
20140061668 | GaN Single Crystal Substrate and Method of Manufacturing Thereof and GaN-based Semiconductor Device and Method of Manufacturing Thereof - A GaN single crystal substrate has a main surface with an area of not less than 10 cm | 03-06-2014 |
20140369920 | Group III Nitride Crystal Substrates and Group III Nitride Crystal - Group III nitride crystal produced by cutting, from III nitride bulk crystal, a plurality of Group III nitride crystal substrates with major-surface plane orientation misoriented five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates adjacent to each other such that their major surfaces are parallel to each other and such that their [0001] directions coincide with each other, and growing a Group III nitride crystal on the major surfaces. The Group III nitride crystal substrates are further characterized by satisfying at least either an oxygen-atom concentration of 1×10 | 12-18-2014 |
20150060886 | SEMICONDUCTOR SUBSTRATE - A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to <0001> direction is at most 1×10 | 03-05-2015 |