Patent application number | Description | Published |
20150034974 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes: an n-type first SiC epitaxial layer; a p-type second SiC epitaxial layer on the first SiC epitaxial layer containing a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D forming a combination of Al, Ga, or In and N, and/or a combination of B and P, the ratio of the concentration of the element D to the element A being higher than 0.33 but lower than 1.0; a surface region at the surface of the second SiC epitaxial layer containing the element A at a lower concentration than in the second SiC epitaxial layer, the ratio being higher than in the second SiC epitaxial layer; n-type first and second SiC regions; a gate insulating film; a gate electrode; a first electrode; and a second electrode. | 02-05-2015 |
20150060883 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first electrode, a first insulating section, and a second insulating section. The first semiconductor region includes silicon carbide, is of a first conductivity type and includes first and second parts. The second semiconductor region includes silicon carbide, is of a second conductivity type and is provided on the second part. The third semiconductor region includes silicon carbide, is of the first conductivity type and is provided on the second semiconductor region. The first electrode is provided on the first part and the third semiconductor region. The first insulating section is provided on the third semiconductor region and juxtaposed with the first electrode. The second insulating section is provided between the first electrode and the first part and between the first electrode and the first insulating section. | 03-05-2015 |
20150060884 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a first electrode. The first semiconductor region is of a first conductivity type. The second semiconductor region is provided on the first semiconductor region, and is of a second conductivity type. The third semiconductor region is provided on the second semiconductor region, and is of the second conductivity type. The third semiconductor region contains a first impurity of the first conductivity type and a second impurity of the second conductivity type, and satisfies 103-05-2015 | |
20150060885 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment includes an i-type or a p-type first diamond semiconductor layer, an n-type second diamond semiconductor layer provided on the first diamond semiconductor layer, a mesa structure and an n-type first diamond semiconductor region provided on the side surface. The mesa structure includes the first diamond semiconductor layer, the second diamond semiconductor layer, a top surface with a plane orientation of ±10 degrees or less from a {100} plane, and a side surface inclined by 20 to 90 degrees with respect to a direction of <011>±20 degrees from the {100} plane. The first diamond semiconductor region is in contact with the second diamond semiconductor layer and has an n-type impurity concentration lower than an n-type impurity concentration of the second diamond semiconductor layer. | 03-05-2015 |
20150069416 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The first semiconductor region includes silicon carbide. A conductivity type of the first semiconductor region is a first conductivity type. The second semiconductor region includes silicon carbide. A conductivity type of the second semiconductor region is a second conductivity type. The third semiconductor region includes silicon carbide. A conductivity type of the third semiconductor is the second conductivity type. The third semiconductor region is provided between the first semiconductor region and the second semiconductor region. As viewed in a direction connecting the first semiconductor region and the second semiconductor region, an area of an overlapping region of the second semiconductor region and the third semiconductor region is smaller than an area of an overlapping region of the first semiconductor region and the second semiconductor region. | 03-12-2015 |
20150085548 | ELECTRIC POWER CONVERSION DEVICE - An electric power conversion device of an embodiment includes the electric power conversion device expressed as an equivalent circuit including, a power supply, a first parasitic inductance, a first diode; a second parasitic inductance connected to the first diode in series, a second diode connected to the first diode in parallel, a third parasitic inductance connected to the second diode in series, a switching element, a gate circuit, and a load. The equivalent circuit includes a first circuit loop and a second circuit loop. The first circuit loop includes the power supply, the first parasitic inductance, the first diode, the second parasitic inductance, the switching element, and the gate circuit. The second circuit loop includes the power supply, the first parasitic inductance, the second diode, the third parasitic inductance, the switching element, and the gate circuit. | 03-26-2015 |
20150087125 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device of an embodiment includes: preparing a substrate; and growing a p-type SiC single-crystal layer on the surface of the substrate from a liquid phase that contains Si (silicon), C (carbon), a p-type impurity, and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D forming a first combination that is at least one combination selected from Al (aluminum) and N (nitrogen), Ga (gallium) and N (nitrogen), and In (indium) and N (nitrogen), and/or a second combination of B (boron) and P (phosphorus), the ratio of the concentration of the element D to the concentration of the element A in the first or second combination being higher than 0.33 but lower than 1.0. | 03-26-2015 |
Patent application number | Description | Published |
20090008650 | FIELD-EFFECT TRANSISTOR AND THYRISTOR - A decrease in breakdown voltage can be prevented as much as possible. A field-effect transistor includes: a drain region made of SiC; a drift layer which is formed on the drain region and is made of n-type SiC; a source region which is formed on the surface of the drift layer and is made of n-type SiC; a channel region which is formed on the surface of the drift layer located on a side of the source region and is made of SiC; an insulating gate which is formed on the channel region; and a p-type base region interposed between the bottom portion of the source region and the drift region, and containing two kinds of p-type impurities. | 01-08-2009 |
20090078942 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes an SiC substrate, a first SiC layer of first conductivity provided on the substrate, a second SiC layer of second conductivity provided on the first SiC layer, first and second SiC regions provided in the second SiC layer, facing each other and having the same depth, a third SiC region extending through the first SiC region and reaching the first SiC layer, a gate insulator formed on the first and second SiC regions and the second SiC layer interposed therebetween, a gate electrode formed on the gate insulator, a first contact of first conductivity formed on the second SiC region, a second contact of second conductivity formed on the second SiC region, reaching the second SiC layer through the second SiC region, and a top electrode formed on the first and second contacts, and a bottom electrode formed on a back surface of the substrate. | 03-26-2009 |
20090134405 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - A semiconductor substrate includes a silicon carbide substrate having a first impurity concentration, a first silicon carbide layer formed on the silicon carbide substrate and having a second impurity concentration, and a second silicon carbide layer of a first conductivity type formed on the first silicon carbide layer and having a third impurity concentration, wherein the second impurity concentration is higher than either the first impurity concentration or the third impurity concentration. | 05-28-2009 |
20100078650 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate made of silicon carbide and having a surface, a normal vector for the surface having an off angle with respect to a <0001> direction or a <000-1> direction, a semiconductor layer of a first conductivity type formed on the semiconductor substrate, a first semiconductor region of a second conductivity type formed in a surface region of the semiconductor layer, a source region of a first conductivity type formed in a surface region of the first semiconductor region, a second semiconductor region of a second conductivity type formed in the surface region of the semiconductor layer, contacting the first semiconductor region, and having a bottom surface lower than a bottom surface of the first semiconductor region, wherein at least one end of the bottom surface of the second semiconductor region is perpendicular to an off angle direction. | 04-01-2010 |
20100308343 | SILICON CARBIDE SEMICONDUCTOR DEVICE - According to the embodiment, a semiconductor device includes an SiC substrate of a first or second conductivity type. An SiC layer of the first conductivity type is formed on a front surface of the substrate, a first SiC region of the second conductivity type is formed on the SiC layer, a second SiC region of the first conductivity type is formed within a surface of the first SiC region, a gate dielectric is continuously formed on the SiC layer, the second SiC region, and the surface of the first SiC region interposed between the SiC layer and the second SiC region, a gate electrode is formed on the gate dielectric, a first electrode is embedded in a trench selectively formed in a part where the first SiC region adjoins the second SiC region, and a second electrode is formed on a back surface of the substrate. | 12-09-2010 |
20150034973 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes: an n-type first SiC epitaxial layer; a p-type second SiC epitaxial layer provided on the first SiC epitaxial layer and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D forming a combination of Al, Ga, or In and N, and/or a combination of B and P, the ratio of the concentration of the element D to the concentration of the element A in the combination(s) being higher than 0.33 but lower than 1.0; n-type first and second SiC regions provided in the surface of the second SiC epitaxial layer; a gate insulating film; a gate electrode; a first electrode provided on the second SiC region; and a second electrode provided on the opposite side from the first electrode. | 02-05-2015 |
Patent application number | Description | Published |
20130234158 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration. | 09-12-2013 |
20130240904 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, an insulating film, a control electrode, a first electrode, and a second electrode. The first semiconductor region includes silicon carbide, and has a first portion. The second semiconductor region is provided on the first semiconductor region, and includes silicon carbide. The third semiconductor region and the fourth semiconductor region are provided on the second semiconductor region, and includes silicon carbide. The electrode is provided on the film. The second semiconductor region has a first region and a second region. The first region contacts with the third semiconductor region and the fourth semiconductor region. The second region contacts with the first portion. The impurity concentration of the first region is higher than an impurity concentration of the second region. | 09-19-2013 |
20130248880 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, and a fourth semiconductor region, a control electrode, a floating electrode, and an insulating film. The first region contains silicon carbide. The second region is provided on the first region and contains silicon carbide. The third region is provided on the second region and contains silicon carbide. The fourth region is provided on the third region and contains silicon carbide. The control electrode is provided in a trench formed in the fourth, the third, and the second region. The floating electrode is provided between the control electrode and a bottom surface of the trench. The insulating film is provided between the trench and the control electrode, between the trench and the floating electrode, and between the control electrode and the floating electrode. | 09-26-2013 |
20130248881 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth semiconductor region, a control electrode, and an insulating film. The first region contains silicon carbide. The second region is provided on the first region and contains silicon carbide. The third region is provided on the second region and contains silicon carbide. The fourth region is provided on the third region and contains silicon carbide. The control electrode is provided in a trench. The trench is formed in the fourth, the third, and the second semiconductor region. The insulating film is provided between a side surface of the trench and the control electrode. The insulating film contains a high-dielectric constant region. The high-dielectric constant region contacts with at least the third semiconductor region. The high-dielectric constant region has a higher dielectric constant than a dielectric constant of silicon oxide. | 09-26-2013 |
20140034964 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first and a second transistor. The first transistor includes a first and a second region of a first conductivity type and a third region of a second conductivity type. The first region is disposed along a first crystal face of a silicon carbide region. The silicon carbide region has the first crystal face and a second crystal face. The second and the third region are disposed along the first face. The third region is provided between the first and the second region. The second transistor includes a fourth and fifth region of the second type and a sixth region of the first type. The fourth, the fifth and the sixth region are disposed along the second face of the silicon carbide region. The sixth region is provided between the fourth and the fifth region. | 02-06-2014 |
20140034965 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device, includes: a first semiconductor region of a first conductivity type; a second semiconductor region provided on the first semiconductor region, an impurity concentration of the second semiconductor region being lower than an impurity concentration of the first semiconductor region; a third semiconductor region of a second conductivity type provided on the second semiconductor region; and a fourth semiconductor region provided on the third semiconductor region or in a portion of the third semiconductor region. A lattice strain of the fourth semiconductor region is greater than a lattice strain of the third semiconductor region. | 02-06-2014 |
20140034966 | TRANSISTOR AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a transistor includes: a structural body; an insulating film; a control electrode; a first electrode; and a second electrode. The structural body includes a first through a third semiconductor regions, and includes a compound semiconductor having a first and a second elements. The first electrode is electrically continuous with the third semiconductor region. The second electrode is electrically continuous with the first semiconductor region. The structural body has a first region provided above a lower end of the second semiconductor region and a second region other than the first region. The first region is a region formed by making a ratio of concentration of source gas of the second element to concentration of source gas of the first element larger than 1.0. Impurity concentration of the first conductivity type in the first region is higher than that in the second region. | 02-06-2014 |
20140084303 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a structural body, an insulating film, and a control electrode. The structural body has a first surface, and includes a first semiconductor region including silicon carbide of a first conductivity type, a second semiconductor region including silicon carbide of a second conductivity type, and a third semiconductor region including silicon carbide of the first conductivity type. The structural body has a portion in which the first semiconductor region, the second semiconductor region, and the third semiconductor region are arranged in this order in a first direction along the first surface. The insulating film is provided on the first surface of the structural body. The control electrode is provided on the insulating film. The structural body has a buried region provided between the second semiconductor region and the first surface. The buried region is doped with a group V element. | 03-27-2014 |
20140084304 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a structure, an insulating film, a control electrode, first and second electrodes. The structure has a first surface, and includes a first, a second, and a third semiconductor region. The structure has a portion including the first, second, and third semiconductor regions arranged in a first direction along the first surface. The insulating film is provided on the first surface. The control electrode is provided on the insulating film. The first electrode is electrically connected to the third semiconductor region. The second electrode is electrically connected to the first semiconductor region. The insulating film includes a charge trap region. A bias voltage is applied to the first and second electrodes, and includes a shift voltage. The shift voltage shifts a reference potential of a voltage applied to the first and second electrodes by a certain voltage. | 03-27-2014 |
20140084359 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of a first conductivity type, a first electrode, and a contact region. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The first electrode has a first and a second portion. The first portion is provided in a first direction and has a lower end being positioned below a lower end of the third semiconductor region. The second portion is in contact with the first portion and is provided on the third semiconductor region. The contact region is provided between the first portion and the second semiconductor region and is electrically connected to the first electrode and the second semiconductor region. | 03-27-2014 |
20140147997 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration. | 05-29-2014 |
20140183177 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a first electrode and a heat generation portion. The first semiconductor region includes n-type silicon carbide. The second semiconductor region is provided on a portion of the first semiconductor region. The second semiconductor region includes p-type silicon carbide. The first electrode provided on the first semiconductor region and the second semiconductor region. The heat generation portion is provided on the second semiconductor region. | 07-03-2014 |
20140209927 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME AND SEMICONDUCTOR SUBSTRATE - According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type made of silicon carbide; and a second semiconductor layer of a second conductivity type made of silicon carbide, placed in junction with the first semiconductor layer, and containing an electrically inactive element. | 07-31-2014 |
20140252378 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor substrate includes a substrate and a semiconductor layer. The substrate has a first surface and containing a silicon carbide. The semiconductor layer is provided on the first surface. The semiconductor layer has a thickness of H centimeters in a perpendicular direction to the first surface. The semiconductor layer contains an epitaxially grown silicon carbide with an off angle θ provided relative to a (0001) face of the substrate. The semiconductor layer includes k pieces of basal plane dislocation per one square centimeter viewed in the perpendicular direction. When S=(½)×H | 09-11-2014 |
20140286063 | RECTIFIER AND METHOD FOR CONTROLLING THE SAME - According to one embodiment, a rectifier includes a rectifying device, a control element and a controller. The control element is serially connected to the rectifying device. The control element has a resistance value that changes according to a control signal. The controller generates the control signal according to a change in a current flowing in the rectifying device. | 09-25-2014 |
20150076523 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first and a second transistor. The first transistor includes a first and a second region of a first conductivity type and a third region of a second conductivity type. The first region is disposed along a first crystal face of a silicon carbide region. The silicon carbide region has the first crystal face and a second crystal face. The second and the third region are disposed along the first face. The third region is provided between the first and the second region. The second transistor includes a fourth and fifth region of the second type and a sixth region of the first type. The fourth, the fifth and the sixth region are disposed along the second face of the silicon carbide region. The sixth region is provided between the fourth and the fifth region. | 03-19-2015 |
20150087124 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth semiconductor region, a control electrode, and an insulating film. The first region contains silicon carbide. The second region is provided on the first region and contains silicon carbide. The third region is provided on the second region and contains silicon carbide. The fourth region is provided on the third region and contains silicon carbide. The control electrode is provided in a trench. The trench is formed in the fourth, the third, and the second semiconductor region. The insulating film is provided between a side surface of the trench and the control electrode. The insulating film contains a high-dielectric constant region. The high-dielectric constant region contacts with at least the third semiconductor region. The high-dielectric constant region has a higher dielectric constant than a dielectric constant of silicon oxide. | 03-26-2015 |
Patent application number | Description | Published |
20110057202 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - According to the embodiments, a semiconductor device using SiC and having a high breakdown voltage, a low on-resistance, and excellent reliability is provided. The semiconductor device includes a silicon carbide substrate having first and second main surfaces; a first silicon carbide layer of a first conductive type provided on the first main surface of the silicon carbide substrate; first silicon carbide regions of a second conductive type formed on a surface of the first silicon carbide layer; second silicon carbide regions of the first conductive type formed on respective surfaces of the first silicon carbide regions; third silicon carbide regions of the second conductive type formed on the respective surfaces of the first silicon carbide regions; a fourth silicon carbide region of the second conductive type formed between the facing first silicon carbide regions with the first silicon carbide layer therebetween; a gate insulating film formed continuously on surfaces of the first silicon carbide regions, the first silicon carbide layer, and the fourth silicon carbide region; a gate electrode formed on the gate insulating film; an interlayer insulating film which covers the gate electrode; a first electrode which is electrically connected to the second silicon carbide regions and the third silicon carbide regions; and a second electrode formed on the second main surface of the silicon carbide substrate. | 03-10-2011 |
20110059597 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film. | 03-10-2011 |
20110175106 | SEMICONDUCTOR RECTIFIER - A semiconductor rectifier includes: a wide bandgap semiconductor substrate of a first conductivity type; a wide bandgap semiconductor layer of the first conductivity type which is formed on an upper surface of the wide bandgap semiconductor substrate and has an impurity concentration of 1E+14 atoms/cm | 07-21-2011 |
20120037922 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - The invention provides an ultra-low-on-resistance, excellent-reliability semiconductor device that can finely be processed using SiC and a semiconductor device producing method. A semiconductor device includes: a silicon carbide substrate; a first-conductive-type first silicon carbide layer provided on a first principal surface of the silicon carbide substrate; a second-conductive-type first silicon carbide region formed at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region formed at a surface of the first silicon carbide region; a second-conductive-type third silicon carbide region formed below the second silicon carbide region; a trench piercing through the second silicon carbide region to reach the third silicon carbide region; a gate insulating film; a gate electrode; an interlayer insulating film with which the gate electrode is covered; a first electrode that is formed on the second silicon carbide region and the interlayer insulating film in a side surface of the trench while containing a metallic element selected from a group consisting of Ni, Ti, Ta, Mo, and W; a second electrode that is formed on the third silicon carbide region in a bottom portion of the trench and the first electrode while containing Al; a first main electrode formed on the second electrode; and a second main electrode formed on a second principal surface of the silicon carbide substrate. | 02-16-2012 |
20120056195 | SEMICONDUCTOR DEVICE - One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type third silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type fourth silicon carbide region formed between the first silicon carbide region and the second silicon carbide region, and having an impurity concentration higher than that of the first silicon carbide region; a gate insulator; a gate electrode formed on the gate insulator; an inter-layer insulator; a first electrode connected to the second silicon carbide region and the third silicon carbide region; and a second electrode on the second principal surface. | 03-08-2012 |
20120056196 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third semiconductor layer epitaxially formed on the second semiconductor layer, and having an impurity concentration higher than that of the second semiconductor layer. The semiconductor device also includes a recess formed in the third semiconductor layer, and at least a corner portion of a side face and a bottom surface is located in the second semiconductor layer. The semiconductor device also includes a first electrode in contact with the third semiconductor layer; a second electrode connected to the first electrode while being in contact with the second semiconductor layer at the bottom surface of the recess; and a third electrode in contact with a lower surface of the semiconductor substrate. | 03-08-2012 |
20120056198 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device according to an embodiment includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type, a first electrode and a second electrode. The first semiconductor region is formed on at least a part of the first semiconductor layer formed on the semiconductor substrate. The second semiconductor region is formed on another part of the first semiconductor layer to reach an inside of the first semiconductor layer and having an impurity concentration higher than that of the first semiconductor region. The first electrode is formed on the second semiconductor region and a third semiconductor regions formed in a part of the first semiconductor region. The second electrode is formed to be in contact with a rear surface of the semiconductor substrate. | 03-08-2012 |
20120199846 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device of an embodiment at least includes: a SiC substrate; and a gate insulating film formed on the SiC substrate, wherein at an interface between the SiC substrate and the gate insulating film, some of elements of both of or one of Si and C in an outermost surface of the SiC substrate are replaced with at least one type of element selected from nitrogen, phosphorus, and arsenic. | 08-09-2012 |
20120228630 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device according to an embodiment includes a first electrode and a first silicon carbide (SiC) semiconductor part. The first electrode uses a conductive material and the first silicon carbide (SiC) semiconductor part is connected to the first electrode, in which at least one element of magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba) is contained in an interface portion with the first electrode in such a way that a surface density thereof peaks, and whose conduction type is a p-type. | 09-13-2012 |
20120228631 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes: a silicon carbide substrate including first and second principal surfaces; a first conductive-type first silicon carbide layer provided on the first principal surface of the silicon carbide substrate; a second conductive-type first silicon carbide region formed on a surface of the first silicon carbide layer; a first conductive-type second silicon carbide region formed on a surface of the first silicon carbide region; a second conductive-type third silicon carbide region formed on the surface of the first silicon carbide region; a gate insulating film continuously formed on the surfaces of the first silicon carbide layer, the first silicon carbide region, and the second silicon carbide region; a first electrode formed of silicon carbide formed on the gate insulating film; a second electrode formed on the first electrode; an interlayer insulating film for covering the first and second electrodes; a third electrode electrically connected to the second silicon carbide region and the third silicon carbide region; and a fourth electrode formed on the second principal surface of the silicon carbide substrate. | 09-13-2012 |
20120228637 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes a first conductive type silicon carbide substrate having first and second main surfaces, a first conductive type silicon carbide layer formed on the first main surface, a second conductive type first silicon carbide region formed in the silicon carbide layer, and a first conductive type second silicon carbide region formed in the first silicon carbide region. The device includes a trench penetrating through the first and second silicon carbide regions, and a second conductive type third silicon carbide region formed on a bottom and a side surface of the trench. The third silicon carbide region is in contact with the first silicon carbide region, and is formed between the trench and the silicon carbide layer. In addition, the device includes a gate insulating film formed in the trench, a gate electrode, a first electrode, and a second electrode. | 09-13-2012 |
20120228734 | HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR RECTIFIER - A high breakdown voltage diode of the present embodiment includes a first conductive semiconductor substrate, a drift layer formed on the first conductive semiconductor substrate and formed of a first conductive semiconductor, a buffer layer formed on the drift layer and formed of a second conductive semiconductor, a second conductive high concentration semiconductor region formed at an upper portion of the buffer layer, a mesa termination unit formed on an end region of a semiconductor apparatus to relax an electric field of the end region when reverse bias is applied between the semiconductor substrate and the buffer layer, and an electric field relaxation region formed at the mesa termination unit and formed of a second conductive semiconductor. | 09-13-2012 |
20130062623 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a semiconductor device including: a first electrode formed of a conductive material; a p-type first silicon carbide (SiC) semiconductor section and an n-type second SiC semiconductor section | 03-14-2013 |
20130062624 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device according to an embodiment includes a silicon carbide, a metal silicide formed on the silicon carbide and including a first layer and a second layer having a carbon ratio lower than that of the first layer, and a metallic electrode formed on the metal silicide, wherein the second layer is formed on the first layer, and the second layer is in contact with the metallic electrode, and an average grain diameter of a metal silicide in the second layer is larger than an average grain diameter of a metal silicide in the first layer. | 03-14-2013 |
20130062626 | POWER SEMICONDUCTOR MODULE - Disclosed is a power semiconductor module which includes a unipolar type switching device using a wide bandgap semiconductor (wide bandgap semiconductor switching device) and an insulated gate bipolar transistor using a silicon semiconductor (Si-IGBT) connected in parallel, in which a chip area of the wide bandgap semiconductor switching device is smaller than that of the Si-IGBT. | 03-14-2013 |
20130065382 | METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A method of manufacturing a silicon carbide semiconductor device of an embodiment includes: implanting ions in a silicon carbide substrate; performing first heating processing of the silicon carbide substrate in which the ions are implanted; and performing second heating processing of the silicon carbide substrate for which the first heating processing is performed, at a temperature lower than the first heating processing. | 03-14-2013 |
20130137253 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes: a silicon carbide substrate having first and second main surfaces; a first silicon carbide layer provided on the first main surface of the silicon carbide substrate; first silicon carbide regions formed on a surface of the first silicon carbide layer; second and third silicon carbide regions formed on respective surfaces of the first silicon carbide regions; a fourth silicon carbide region formed between facing first silicon carbide regions with the first silicon carbide layer therebetween; a gate insulating film formed continuously on surfaces of the first silicon carbide regions, the first silicon carbide layer, and the fourth silicon carbide region; a gate electrode formed on the gate insulating film; an interlayer insulating film covering the gate electrode; a first electrode electrically connected to the second and third silicon carbide regions; and a second electrode formed on the second main surface of the silicon carbide substrate. | 05-30-2013 |
20130237042 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device of an embodiment includes: preparing a silicon carbide substrate of a hexagonal system; implanting ions into the silicon carbide substrate; forming, by epitaxial growth, a silicon carbide film on the silicon carbide substrate into which the ions have been implanted; and forming a pn junction region in the silicon carbide film. | 09-12-2013 |
20130313573 | SEMICONDUCTOR RECTIFIER - A semiconductor rectifier includes a first conductivity type wide bandgap semiconductor substrate having a first conductivity type wide bandgap semiconductor layer on an upper surface of which is formed a plurality of first wide bandgap semiconductor regions of the first conductivity type sandwiching a plurality of second wide bandgap semiconductor regions of a second conductivity type, and a plurality of third wide bandgap semiconductor regions of the second conductivity type, at least a part of the third wide bandgap semiconductor regions being connected to the second wide bandgap semiconductor regions and each of the third wide bandgap semiconductor regions having a width smaller than that of the second wide bandgap semiconductor regions. A first electrode is formed on the first and second wide bandgap semiconductor regions and a second electrode is formed on a lower surface of the wide bandgap semiconductor substrate. | 11-28-2013 |
20140134817 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device according to an embodiment includes a silicon carbide, a metal silicide formed on the silicon carbide and including a first layer and a second layer having a carbon ratio lower than that of the first layer, and a metallic electrode formed on the metal silicide, wherein the second layer is formed on the first layer, and the second layer is in contact with the metallic electrode, and an average grain diameter of a metal silicide in the second layer is larger than an average grain diameter of a metal silicide in the first layer. | 05-15-2014 |
20140283736 | VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD - A vapor phase growth apparatus of an embodiment includes a reaction chamber, a first gas supply channel that supplies a Si source gas to the reaction chamber, a second gas supply channel that supplies a C source gas to the reaction chamber, a third gas supply channel that supplies an n-type impurity source gas to the reaction chamber, a fourth gas supply channel that supplies a p-type impurity source gas to the reaction chamber, and a control unit that controls the amounts of the n-type impurity and p-type impurity source gases at a predetermined ratio, and introduces the n-type impurity and p-type impurity source gases into the reaction chamber. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al, Ga, or In and N, and/or a combination of B and P. | 09-25-2014 |
20140284619 | SIC EPITAXIAL WAFER AND SEMICONDUCTOR DEVICE - An SiC epitaxial wafer of an embodiment includes, an SiC substrate, and a p-type first SiC epitaxial layer that is formed on the SiC substrate and contains a p-type impurity and an n-type impurity. An element A and an element D being a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus) when the p-type impurity is the element A and the n-type impurity is the element D. The ratio of the concentration of the element D to the concentration of the element A in the combination(s) is higher than 0.33 but lower than 1.0. | 09-25-2014 |
20140284620 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes an n-type SiC substrate, an n-type SiC layer formed on the SiC substrate; a p-type first SiC region formed in the surface of the SiC layer and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination of Al, Ga, or In and N, and/or a combination of B and P, the ratio of the concentration of the element D to the concentration of the element A in the combination(s) being higher than 0.33 but lower than 0.995, the concentration of the element A forming part of the combination(s) being not lower than 1×10 | 09-25-2014 |
20140284621 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes an n-type SiC impurity region containing a p-type impurity and an n-type impurity. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus). The ratio of the concentration of the element A to the concentration of the element D in the above combination is higher than 0.40 but lower than 0.95, and the concentration of the element D forming the above combination is not lower than 1×10 | 09-25-2014 |
20140284622 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes a p-type SiC impurity region containing a p-type impurity and an n-type impurity. Where the p-type impurity is an element A and the n-type impurity is an element D, the element A and the element D form a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus). The ratio of the concentration of the element D to the concentration of the element A in the above combination is higher than 0.33 but lower than 0.995, and the concentration of the element A forming part of the above combination is not lower than 1×10 | 09-25-2014 |
20140284623 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes, an n-type SiC substrate that has first and second faces, and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus), the ratio of the concentration of the element A to the concentration of the element D in the combination(s) being higher than 0.40 but lower than 0.95, the concentration of the element D forming the combination(s) being not lower than 1×10 | 09-25-2014 |
20140335682 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third semiconductor layer epitaxially formed on the second semiconductor layer, and having an impurity concentration higher than that of the second semiconductor layer. The semiconductor device also includes a recess formed in the third semiconductor layer, and at least a corner portion of a side face and a bottom surface is located in the second semiconductor layer. The semiconductor device also includes a first electrode in contact with the third semiconductor layer; a second electrode connected to the first electrode while being in contact with the second semiconductor layer at the bottom surface of the recess; and a third electrode in contact with a lower surface of the semiconductor substrate. | 11-13-2014 |