Patent application number | Description | Published |
20130169953 | SYSTEM AND METHOD FOR MEASURING NARROW AND WIDE ANGLE LIGHT SCATTER ON A HIGH-SPEED CELL SORTING DEVICE - The various embodiments disclosed herein utilize multiple lasers that have different wavelengths and a single detection path. The lasers are mounted orthogonal to one another so that one laser will provide a forward angle light scatter (FALS) signal in the detection path, and one laser will provide a side scatter signal in the detection path (i.e., the single detection optics are approximately in-line with the FALS laser and approximately orthogonal to the side scatter laser). The single detector path spectrally separates the forward and side scatter signals prior to applying them to their respective detectors for measurement. | 07-04-2013 |
20130328055 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first, second and third semiconductor layers, and a light emitting layer. The first semiconductor layer of a first conductivity type is provided on the first electrode. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer of a second conductivity type is provided on the light emitting layer. The third semiconductor layer with low impurity concentration is provided on a part of the second semiconductor layer. The second electrode includes a pad section and a narrow wire section. The pad section is provided on the third semiconductor layer. The narrow wire section extends out from the pad section and includes an extending portion extending along a plane perpendicular to a stacking direction. The narrow wire section is in contact with the second semiconductor layer. | 12-12-2013 |
20130328075 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first and second semiconductor layers and a light emitting layer. The first electrode includes a first region, a second region, and a third region provided between them. The first semiconductor layer includes a first portion on the first region and a second portion on the second region. The light emitting layer includes a third portion on the first portion and a fourth portion on the second portion. The second semiconductor layer includes a fifth portion on the third portion and a sixth portion on the fourth portion. The insulating layer is provided between the first and second portions on the third region and between the third and fourth portions. The second electrode includes a seventh portion provided on the insulating layer, eighth and ninth portions contacting side surfaces of the fifth and sixth portions. | 12-12-2013 |
20140048816 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a metal substrate, a first semiconductor layer, a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first intermediate layer and a second intermediate layer. The substrate has a coefficient of thermal expansion not more than 10×10 | 02-20-2014 |
20140138614 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a light emitting layer; a conductive metal layer; and a first stress application layer. The first semiconductor layer contains a nitride semiconductor crystal and receives tensile stress in a (0001) plane. The second semiconductor layer contains a nitride semiconductor crystal. The light emitting layer has an average lattice constant larger than a lattice constant of the first semiconductor layer. The conductive metal layer has a thermal expansion coefficient larger than a thermal expansion coefficient of a nitride semiconductor crystal. The first stress application layer is provided between the second semiconductor layer and the light emitting layer. The first stress application layer relaxes tensile stress applied from the metal layer to the second semiconductor layer. | 05-22-2014 |
20140138722 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes: a stacked body, a wavelength conversion layer, a first metal layer, and a first insulating section. The stacked body includes: a first and a second semiconductor layers; and a first light emitting layer provided between the first and the second semiconductor layers. The wavelength conversion layer is configured to convert wavelength of light emitted from the first light emitting layer. The first semiconductor layer is placed between the first light emitting layer and the wavelength conversion layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating section is provided between a first side surface and a first side surface portion of the first metal layer and between the wavelength conversion layer and the first side surface portion. | 05-22-2014 |
20140264413 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes a stacked body, a first metal layer, and a second metal layer. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The second semiconductor layer is separated from the first semiconductor layer in a first direction. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first metal layer is stacked with the stacked body in the first direction to be electrically connected to one selected from the first semiconductor layer and the second semiconductor layer. The first metal layer has a side surface extending in the first direction. The second metal layer covers at least a portion of the side surface of the first metal layer. A reflectance of the second metal layer is higher than a reflectance of the first metal layer. | 09-18-2014 |
20150104972 | Connector - An electrical connector housing is disclosed having a first housing member, and a second housing member mated with the first housing member. A front wall is disposed on an outer surface of at least one of the housing members and extends perpendicular to an insertion direction. A first sidewall is disposed on the outer surface of the first housing member and extends along the insertion direction, perpendicular to the front wall. A second sidewall is disposed on the outer surface of the second housing member and extends along the insertion direction, parallel with the first sidewall and perpendicular to the front wall. A cantilevered first lock arm extends along an insertion direction and is positioned between the first sidewall and second sidewall. The lock arm includes a fixed end, a free end, and a hook. | 04-16-2015 |