Patent application number | Description | Published |
20100053970 | LIGHT-EMITTING DEVICE AND ILLUMINATING DEVICE - A light-emitting device includes: a first laser light source; a first diffusion member provided along a light axis of a first light radiated form the first laser light source; and a first wavelength converter provided along the first diffusion member. The first diffusion member generates a second light from the first light. The second light outgoes in a direction different from the light axis direction of the first light. A ratio of generating the second light from the first light in a first part is higher than that in a second part, wherein an intensity of the first light in the first part is lower than that in a second part. The first wavelength converter absorbs the second light and emitting a third light having a different wavelength from the second light. | 03-04-2010 |
20100172388 | LIGHT EMITTING DEVICE - A light emitting device includes: a semiconductor laser element having a first emission face for emitting laser light; a light guiding body buried in the concave portion of the supporting base, guiding the laser light emitted from the semiconductor laser element, and having an incident face to which the laser light enters, and a second emission face from which the laser light traveling through the light guiding body is emitted, the incident face of the light guiding body being such a curved face that an incident angle of the laser light is within a predetermined range including the Brewster angle in a plane formed by a traveling direction of the laser light and a short axis of a light emitting spot of the laser light; and a fluorescent substance scattered in the light guiding body, absorbing the laser light, and emitting the light having a different wavelength from a wavelength of the laser light. | 07-08-2010 |
20110051769 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion | 03-03-2011 |
20120007113 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Al | 01-12-2012 |
20120273794 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first layer has a first upper surface and a first side surface. The active layer has a first portion covering the first upper surface and having a second upper surface, and a second portion covering the first side surface and having a second side surface. The second layer has a third portion covering the second upper surface, and a fourth portion covering the second side surface. The first and second layers include a nitride semiconductor. The first portion along a stacking direction has a thickness thicker than the second portion along a direction from the first side surface toward the second side surface. The third portion along the stacking direction has a thickness thicker than the fourth portion along the direction. | 11-01-2012 |
20140042388 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer; a second semiconductor layer; and a light emitting layer provided between the first and the second semiconductor layers. The first semiconductor layer includes a nitride semiconductor, and is of an n-type. The second semiconductor layer includes a nitride semiconductor, and is of a p-type. The light emitting layer includes: a first well layer; a second well layer provided between the first well layer and the second semiconductor layer; a first barrier layer provided between the first and the second well layers; and a first Al containing layer contacting the second well layer between the first barrier layer and the second well layer and containing layer containing Al | 02-13-2014 |
20140080240 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can prepare a substrate unit including a base substrate, an intermediate crystal layer, and a first mask layer. The intermediate crystal layer has a major surface having a first region, a second region, and a first intermediate region. The first mask layer is provided on the first intermediate region. The method can implement a first growth to grow a first lower layer on the first region and grow a second lower layer on the second region. The first and second lower layers include a semiconductor crystal. The method can implement a second growth to grow a second upper layer while growing a first upper layer to cover the first mask layer with the first and second upper layers. The method can implement cooling to separate the first and second upper layers. | 03-20-2014 |
20140252382 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers. | 09-11-2014 |
20150325555 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers. | 11-12-2015 |
20150340348 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a conductive layer; a first stacked body; a second stacked body; a first light-transmissive electrode; and a first interconnect electrode. The first stacked body includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is provided between the first semiconductor layer and the conductive layer. The first light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second stacked body includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the conductive layer. The second light emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer. The first interconnect electrode is provided between the second semiconductor layer and the third semiconductor layer. | 11-26-2015 |
Patent application number | Description | Published |
20090239145 | LITHIUM ION RECHARGEABLE BATTERY - A high power lithium-ion secondary battery having an increased capacity and capable of maintaining high discharge voltage and repeating charging/discharging high current. A lithium-ion secondary battery having; an electrode group formed by laminating or winding a negative electrode layer and a positive electrode layer so as to interpose a separator made of synthetic resin, the negative electrode layer containing a material capable of intercalating/deintercalating lithium-ion, and a positive electrode layer including a lithium-containing metallic oxide; and a non-aqueous electrolyte containing lithium salt, where the electrode group is immersed. The positive electrode material unit contains a fluorinated lithium-containing metallic oxide as a main material, and the separator possesses a hydrophilic group. Further, the positive electrode material preferably contains a main material including LiNi | 09-24-2009 |
20090278082 | CATHODE ACTIVE MATERIAL AND PROCESS FOR PRODUCING THE SAME - It is an object of the present invention to provide a cathode active material capable of reducing degradation in an operation voltage and capacity as compared conventionally when used for a lithium ion secondary battery, and a method for manufacturing the same. The cathode active material contains a composite oxide of lithium and a transition metal (s), wherein a reduction loss of TLC in the composite oxide is 20 to 60%. Also, the composite oxide has a particle diameter of 0.5 to 100 μm, and is preferably fluorinated. The method for manufacturing the cathode active material includes the step of fluorinating the cathode active material. The composite oxide has a particle diameter of 0.5 to 100 μm. The fluorinating step is to fluorinate the composite oxide in a reaction vessel under conditions where fluorine gas partial pressure is 1 to 200 kPa, a reaction time is 10 minutes to 10 days, and a reaction temperature is −10 to 200° C. | 11-12-2009 |
20100009249 | SEPARATOR FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND MULTILAYER SEPARATOR FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY - A separator of the present invention for a nonaqueous electrolyte secondary battery is obtained by fluorinating a polyolefin based resin. A contact angle of the separator with a nonaqueous solvent electrolyte is 40° or less a shutdown temperature of the separator is 170° C. or less. Further, a multilayered separator of the present invention for a nonaqueous electrolyte secondary battery includes a plurality of layers, at least one of which is the foregoing separator for a nonaqueous electrolyte secondary battery. These separators for nonaqueous electrolyte secondary battery have both a favorable electrolyte-retaining characteristic and a suitable shutdown performance. | 01-14-2010 |
20120210548 | LITHIUM SECONDARY BATTERY, METHOD FOR PRODUCING POWER COLLECTION FOIL FOR SAME, AND POWER COLLECTION FOIL FOR SAME - The present invention provides a method for producing a lithium secondary battery in which peeling of an active substance can be prevented and the generation of metal powder can be prevented when a power collection foil is processed at an electrode production step. The method for producing the lithium secondary battery includes an electrode-producing step of producing a positive electrode and a negative electrode; a step of forming a group of electrodes by layering the positive electrode and the negative electrode on each other through a separator, or winding the positive electrode and the negative electrode through a separator; and a step of immersing the group of the electrodes in an electrolyte. The electrode-producing step has a boring step of forming a plurality of through-holes penetrating a power collection foil and having projected parts projected from at least a rear surface of the power collection foil and a mixed agent-forming step of forming a mixed agent layer on the power collection foil through which the through-holes have been formed. After the boring step finishes, the mixed agent-forming step is successively performed without winding the power collection foil through which the through-holes have been formed. | 08-23-2012 |
20120328923 | ELECTRODE MATERIAL FOR LITHIUM SECONDARY BATTERY AND LITHIUM SECONDARY BATTERY - The present invention provides a negative-electrode material for a lithium secondary battery which has a very low resistance, allows the lithium secondary battery to be charged and discharged (high output) at a high current and have a high capacity, and achieve a cycle life to such an extent that the lithium secondary battery can be mounted on a vehicle. The electrode material is composed of (a) at least one active substance ( | 12-27-2012 |
20150010798 | ELECTROLYTE HOLDER FOR LITHIUM SECONDARY BATTERY AND LITHIUM SECONDARY BATTERY - The present invention provides an electrolyte holder for a lithium secondary battery capable of holding an electrolytic solution inside electrodes or at an interface between the separator and each of the electrodes, preventing electrolyte shortage inside the electrodes, and restraining dendrite from precipitating and growing and also provide the lithium secondary battery, using the electrolyte holder, which is capable of achieving a cycle life to such an extent that the lithium secondary battery can be used for industrial application. An electrolyte holder ( | 01-08-2015 |
20150295240 | ELECTRODE FOR LITHIUM SECONDARY BATTERY AND LITHIUM SECONDARY BATTERY - The present invention provides positive and negative electrodes, for a lithium secondary battery, allowing a battery to be quickly and fully charged in a very short period of time, for example, within one minute and allowing the battery to be used for vehicles at low temperatures. An organic electrolytic solution is permeated into an electrode group formed by winding positive and negative electrodes or by laminating the positive and negative electrodes one upon another with a separator being interposed therebetween to repeatingly occlude and release lithium ions. The positive electrode active substance and the negative electrode active substance have at least one phase selected from among a graphene phase and an amorphous phase as a surface layer thereof. An activated carbon layer is formed on a surface of the positive electrode active substance and that of the negative electrode active substance. An activated carbon layer having a specific surface area not less than 1000 m | 10-15-2015 |
Patent application number | Description | Published |
20080246049 | Semiconductor Device, Method for Fabricating an Electrode, and Method for Manufacturing a Semiconductor Device - A semiconductor device includes a p-type nitride semiconductor layer ( | 10-09-2008 |
20100000347 | Ceramic Member, Probe Holder, and Method of Manufacturing Ceramic Member - To provide a ceramic member having a thermal expansion coefficient close to that of silicon and has satisfactory workability, a probe holder formed by using this ceramic member, and a method of manufacturing the ceramic member. For this purpose, at least mica and silicon dioxide are mixed and an external force oriented in one direction is caused to act on this mixed mixture to sinter the mixture. It is more preferable that, in the mixture, a volume content of the mica is 70 to 90 volume % and a volume content of the silicon dioxide is 10 to 30 volume %. | 01-07-2010 |
20110157864 | LIGHT EMITTING DEVICE - According to embodiments, a light emitting device is provided. The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer. | 06-30-2011 |
20110216552 | LIGHT EMITTING DEVICE - An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component. | 09-08-2011 |
20110216554 | LIGHT EMITTING DEVICE - An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component. | 09-08-2011 |
20110216798 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less. | 09-08-2011 |
20110216799 | SEMICONDUCTOR LASER DEVICE - According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe. | 09-08-2011 |
20110222149 | LIGHT-EMITTING APPARATUS, DISPLAY APPARATUS, LIGHT EMITTER, AND METHOD OF FABRICATING LIGHT EMITTER - According to the embodiments, an easy-to-fabricate light-emitting apparatus is provided in which a plurality of phosphors is disposed so as not to overlap each other. The light-emitting apparatus includes a light source that emits excitation light; a substrate having a protrusion and recess configuration where first planes and second planes which intersect the first planes are formed periodically; first phosphor layers formed on the first planes and absorbing the excitation light to emit a first fluorescence; and second phosphor layers formed on the second planes and absorbing the excitation light to emit a second fluorescence with a wavelength different from that of the first fluorescence. | 09-15-2011 |
20120002137 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device of an embodiment has: a semiconductor laser diode emitting a first laser beam; a first reflecting unit configured to reflect the first laser beam and form a second laser beam having a one-dimensionally spread distribution; and a second reflecting unit configured to reflect the second laser beam and form a third laser beam having a two-dimensionally spread distribution. The device also has: an optical switch using liquid crystal, the optical switch being configured to control passage and blocking of the third laser beam; and a first scattering unit scattering the third laser beam. | 01-05-2012 |
20120032215 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm | 02-09-2012 |
20120056153 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer. | 03-08-2012 |
20120056524 | LIGHT EMITTER AND LIGHT EMITTING DEVICE - A light emitter according to one embodiment has a fiber shape. And it includes a core portion containing a light emitting material, the material absorbing excitation light and emitting light having a wavelength longer than a wavelength of the excitation light. And also it includes a clad portion provided outside the core portion, the clad portion having a first region and second regions, the second regions being periodically formed in the first region, the second regions having a refractive index higher than a refractive index of a first region, the refractive index of the first region being equal to or higher than a refractive index of the core portion. | 03-08-2012 |
20120067145 | CERAMIC MEMBER, PROBE HOLDER, AND METHOD FOR MANUFACTURING CERAMIC MEMBER - Provided are a ceramic member being a sintered body including at least forsterite and boron nitride as major components, and in which the boron nitride is oriented in one direction, a probe holder formed by using the ceramic member, and a method for manufacturing the ceramic member. In the ceramic member, the index of orientation preference is equal to or lower than 0.07, and the coefficient of thermal expansion at 20 to 300° C. in a direction parallel to the direction of orientation is (3 to 5)×10 | 03-22-2012 |
20120228581 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm | 09-13-2012 |
20130052451 | INSULATION COATING METHOD FOR METAL BASE, INSULATION COATED METAL BASE, AND SEMICONDUCTOR MANUFACTURING APPARATUS USING THE SAME - An insulation coating method for a metal base comprises a thermal spraying step, an impregnation step, and a beam irradiation step. In the thermal spraying step, a first insulation coating is formed by thermally spraying a first metal oxide to the surface of the metal base. In the impregnation step, pores formed in the surface of the first insulation coating are impregnated with a sol that contains, as a dispersoid, a metal oxide, a hydrate of a metal oxide, or a metal hydroxide. In the beam irradiation step, a second insulation coating that is composed of a second metal oxide is formed by irradiating the first insulation coating and the sol with a high energy beam after the impregnation step. | 02-28-2013 |
20130115416 | CERAMIC MEMBER, PROBE HOLDER, AND MANUFACTURING METHOD OF CERAMIC MEMBER - There is provided a ceramic member which is a sintered body containing enstatite and boron nitride as constituents, in which boron nitride is oriented in a single direction, a probe holder formed using the ceramic member, and a manufacturing method of the ceramic member. In the ceramic member, an index of orientation degree is not less than 0.8. In so doing, it is possible to provide a ceramic member which has a free machining property, a coefficient of thermal expansion which is close to that of silicon, and high strength, and a probe holder which is formed using the ceramic member, and a manufacturing method of the ceramic member. | 05-09-2013 |
20130234155 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a crystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer. | 09-12-2013 |
20130236738 | LAMINATE AND METHOD FOR PRODUCING LAMINATE - It is possible to obtain a laminate having high adhesion strength between ceramic and a metal coating by providing the following: an insulating ceramic substrate; an intermediate layer formed on the surface of the ceramic substrate and having a metal-containing principal component metal layer and an active ingredient layer including metal, a metal oxide, or a metal hydride; and a metal coating formed on the surface of the intermediate layer by accelerating a metal-containing powder with gas, and depositing the same on the surface thereof by spraying while in a solid state. | 09-12-2013 |
20130292152 | CONDUCTIVE MEMBER - A conductive member disposed as a power supply line and the like includes: a first conductive material and a second conductive material, at least one of which includes a conductive material having electrical resistance lower than that of aluminum; and a metal film formed by depositing powder including a metal, which is accelerated together with a gas and sprayed, in a sold state, onto a surface of a butting part, where the first conductive material and the second conductive material are butted against each other. | 11-07-2013 |
20140048818 | PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION SYSTEM, AND METHOD FOR PRODUCTION OF PHOTOELECTRIC CONVERSION ELEMENT - A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1≦p≦n and 2≦n) of 1.59≦Ap≦3.26 and a full width at half maximum Fp (eV) (where 1≦p≦n and 2≦n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1≦q≦m and 2≦m≦n), and the m photoelectric conversion layers each satisfy the relationship of Ap−Fp02-20-2014 | |
20140069700 | LAMINATION, CONDUCTIVE MATERIAL, AND METHOD FOR MANUFACTURING LAMINATION - A lamination includes: a substrate formed of aluminum or aluminum alloy; an intermediate layer formed of any one metal or nonmetal selected from the group consisting of silver, gold, chromium, iron, germanium, manganese, nickel, silicon, and zinc, or an alloy containing the any one metal, on a surface of the substrate; and a film layer formed by accelerating powder material of copper or copper alloy together with gas heated to a temperature lower than a melting point of the powder material and spraying and depositing a solid-phase powder material onto a surface of the intermediate layer. | 03-13-2014 |
20140111095 | LIGHT-EMITTING ELECTRIC-POWER GENERATION MODULE AND LIGHT-EMITTING ELECTRIC-POWER GENERATION DEVICE - A light-emitting electric-power generation module according to an embodiment includes a photoelectric conversion element for emitting light and generating electric power, a light-emission controller configured to control light emission of the photoelectric conversion element, an electric-power generation controller configured to control electric-power generation of the photoelectric conversion element, and a switching unit configured to switch light-emission state and electric-power generation state of the photoelectric conversion element. | 04-24-2014 |
20140134448 | LAMINATED BODY AND METHOD OF MANUFACTURING LAMINATED BODY - The laminated body includes a ceramic base member having an insulating property, an intermediate layer including metal or alloy as a main component formed on a surface of the ceramic base member, and a metal film layer (a circuit layer and a cooling fin) formed on a surface of the intermediate layer by accelerating a powder of metal or alloy with a gas and spraying and depositing the powder on the surface of the intermediate layer as the powder is in a solid state. | 05-15-2014 |
20150034968 | PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION SYSTEM, AND METHOD FOR PRODUCTION OF PHOTOELECTRIC CONVERSION ELEMENT - A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1≦p≦n and 2≦n) of 1.59≦Ap≦3.26 and a full width at half maximum Fp (eV) (where 1≦p≦n and 2≦n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1≦q≦m and 2≦m≦n), and the m photoelectric conversion layers each satisfy the relationship of Ap−Fp02-05-2015 | |