Patent application number | Description | Published |
20080199945 | CANTILEVER FOR MEASURING INTRA-CELLULAR AND INTER-CELLULAR MICROSPACES - A cantilever for measuring intra-cellular and inter-cellular microspaces of the present invention includes a support portion, a lever portion provided to the support portion so as to protrude therefrom, and a probe portion provided near a free end of the lever portion. The probe portion includes a conductive probe made of a carbon-based material, and an insulating film to coat a periphery of the conductive probe. | 08-21-2008 |
20090140263 | METHOD FOR DIAMOND SURFACE TREATMENT AND DEVICE USING DIAMOND THIN FILM - A method for surface treatment of diamond comprising exposing the surface of diamond to UV light containing wavelengths of 172 nm to 184.9 nm and 253.7 nm at an integrated exposure of 10 to 5,000 J/cm | 06-04-2009 |
20090308305 | PROCESS FOR PRODUCING SINGLE-CRYSTAL SUBSTRATE WITH OFF ANGLE - The invention provides a process for producing a single-crystal substrate with an off-angle, which comprises using, as a substrate, a material capable of epitaxial growth by a vapor-phase synthesis method, whose surface has an off-angle with respect to a crystal plane capable of epitaxial growth; implanting ions into the substrate having a surface with an off-angle to form a layer with a deteriorated crystal structure near the surface of the substrate; growing a crystal on the surface with an off-angle of the substrate by a vapor-phase synthesis method; and separating a grown crystal layer from the substrate. In accordance with the process of the invention, when producing off-substrates usable in vapor-phase synthesis of single crystals, the manufacturing costs can be reduced, and substrates with an identical off-angle can be produced easily and in large quantities. | 12-17-2009 |
20100166636 | LARGE DIAMOND CRYSTAL SUBSTRATES AND METHODS FOR PRODUCING THE SAME - The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate. | 07-01-2010 |
20100247884 | STACKED BODY OF ISOTOPE DIAMOND - The present invention aims at providing a high performance device that is not restricted by the current concept of a super-lattice and can overcome or loosen limitations on physical properties of materials and various problems related to hetero junction, and achieves an isotope diamond layered body formed by layering of | 09-30-2010 |
20110027872 | CANTILEVER FOR MEASURING INTRA-CELLULAR AND INTER-CELLULAR MICROSPACES - A cantilever for measuring intra-cellular and inter-cellular microspaces of the present invention includes a support portion, a lever portion provided to the support portion so as to protrude therefrom, and a probe portion provided near a free end of the lever portion. The probe portion includes a conductive probe made of a carbon-based material, and an insulating film to coat a periphery of the conductive probe. | 02-03-2011 |
20110175109 | FILM OF N TYPE (100) ORIENTED SINGLE CRYSTAL DIAMOND SEMICONDUCTOR DOPED WITH PHOSPHOROUS ATOMS, AND A METHOD OF PRODUCING THE SAME - There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same. | 07-21-2011 |
20120103250 | FILM OF N TYPE (100) ORIENTED SINGLE CRYSTAL DIAMOND SEMICONDUCTOR DOPED WITH PHOSPHOROUS ATOMS, AND A METHOD OF PRODUCING THE SAME - There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is ( | 05-03-2012 |
20120132928 | OHMIC ELECTRODE FOR USE IN A SEMICONDUCTOR DIAMOND DEVICE - In a semiconductor diamond device, there is provided an ohmic electrode that is chemically, and thermally stable, and is excellent in respect of low contact resistance, and high heat resistance. A nickel-chromium alloy, or a nickel-chromium compound, containing Ni, and Cr such as Ni | 05-31-2012 |
20120302045 | METHOD FOR PRODUCING MOSAIC DIAMOND - The present invention discloses a method for producing a mosaic diamond comprising implanting ions in the vicinity of the surfaces of a plurality of single-crystal diamond substrates arranged in the form of a mosaic, or in the vicinity of the surfaces of mosaic single-crystal diamond substrates whose back surfaces are bonded by a single-crystal diamond layer, so as to form non-diamond layers; growing a single-crystal diamond layer by a vapor-phase synthesis method; and separating the single-crystal diamond layer above the non-diamond layers by etching the non-diamond layers. The method of the present invention prevents the destruction of single-crystal diamond substrates by using a process that is simpler than conventional methods, thus allowing a large quantity of mosaic diamond to be produced in a stable and efficient manner. | 11-29-2012 |