Patent application number | Description | Published |
20090298394 | METHOD OF POLISHING SILICON WAFER - A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer. | 12-03-2009 |
20110132255 | METHOD FOR PRODUCING EPITAXIAL SILICON WAFER - Since vapor-phase growth of an epitaxial film is performed on the surface of a mirror surface silicon wafer which is not subjected to final polishing, and the surface of the epitaxial film is thereafter subjected to HCl gas etching, the mirror polishing step is simplified, and the productivity is improved, that enables a reduction in cost, and it is possible to suppress the surface roughness of the epitaxial film as well. | 06-09-2011 |
20120034850 | METHOD FOR PRODUCING SILICON EPITAXIAL WAFER - The method for producing a silicon epitaxial wafer according to the present invention has: a growth step F at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step D at which, before the growth step, at least a front surface of the silicon single crystal substrate is polished without using abrasive grains; and a second polishing step G at which at least the front surface of the silicon single crystal substrate is subjected to finish polishing after the growth step. | 02-09-2012 |
20120156878 | METHOD FOR PRODUCING EPITAXIAL SILICON WAFER - Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus leading to an increase in productivity and a reduction in cost, and reduces the density of LPDs attributable to processing and occurring in the front surface of a mirror-polished wafer, thus improving the surface roughness of the wafer front surface. | 06-21-2012 |
20130017763 | WAFER POLISHING METHODAANM Takaishi; KazushigeAACI TokyoAACO JPAAGP Takaishi; Kazushige Tokyo JPAANM Takanashi; KeiichiAACI TokyoAACO JPAAGP Takanashi; Keiichi Tokyo JPAANM Taniguchi; TetsurouAACI TokyoAACO JPAAGP Taniguchi; Tetsurou Tokyo JPAANM Ogata; ShinichiAACI TokyoAACO JPAAGP Ogata; Shinichi Tokyo JPAANM Mikuriya; ShunsukeAACI TokyoAACO JPAAGP Mikuriya; Shunsuke Tokyo JP - An object of the present invention is to provide a method of polishing silicon wafers, capable of suppressing generation of undesired sounds from carriers and reducing the thickness variation of the wafers after polished. | 01-17-2013 |
20130032573 | METHOD FOR POLISHING SILICON WAFER AND POLISHING LIQUID THEREFOR - Disclosed is a method for polishing a silicon wafer, wherein a surface to be polished of a silicon wafer is rough polished, while supplying a polishing liquid, which is obtained by adding a water-soluble polymer to an aqueous alkaline solution that contains no free abrasive grains, to a polishing cloth. Consequently, the surface to be polished can be polished at high polishing rate and the flatness of the edge portion including roll-off and roll-up can be controlled. | 02-07-2013 |
20130109180 | METHOD FOR POLISHING SILICON WAFER, AND POLISHING SOLUTION FOR USE IN THE METHOD | 05-02-2013 |
20130337723 | METHOD AND APPARATUS FOR POLISHING WORKPIECE - In a polishing method of the present invention, the temperature of a carrier plate is measured, and the amount of polishing removal of a workpiece (workpiece) is accurately controlled based on change in the measured temperature of the carrier plate. | 12-19-2013 |
20150083962 | POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME - Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved. | 03-26-2015 |