Patent application number | Description | Published |
20080204677 | PATTERN FORMING METHOD - In a pattern forming method of forming a desired pattern on a resist film on a substrate, the surface of a substrate is subjected to a surface hydrophobizing process to form a processed film for improving the adhesion of the surface of the substrate to resist, a coating film including at least a resist film is formed on the processed film, the resist film is exposed to form a desired pattern, and the pattern-formed resist film is developed. In addition to this, the processed film formed on the underside of the substrate by the surface hydrophobizing process is removed between the time from the formation of the processed film and the exposure of the resist film. | 08-28-2008 |
20080218715 | IMMERSION EXPOSURE METHOD OF AND IMMERSION EXPOSURE APPARATUS FOR MAKING EXPOSURE IN A STATE WHERE THE SPACE BETWEEN THE PROJECTION LENS AND SUBSTRATE TO BE PROCESSED IS FILLED WITH A LIQUID - An immersion exposure method is disclosed which, while causing a relative movement of an immersion area formed so as to intervene between a substrate to be exposed on an exposure stage and a projection lens to the substrate, exposes an irradiation area of the substrate covered with the immersion area. An exposure stage is moved in a first direction, thereby exposing a first exposure area of the substrate. The exposure stage is moved in a second direction opposite to the first direction, thereby exposing a second exposure area adjoining the first exposure area. In a state where the second exposure area is held inside the immersion boundary of the immersion area, the exposure stage is moved from the movement end position of the exposure stage in a first exposure moving process to the movement start position of the exposure stage in a second exposure moving process. | 09-11-2008 |
20090017401 | METHOD OF FORMING MICROPATTERN - A resist film provided on one major surface of a process target substrate is patterned to form a resist pattern. A solubilization process is carried out on the resist film remaining in a space portion of the resist pattern to make the resist film easily soluble in a liquid for removing the remaining resist film. Then, the liquid is supplied to the remaining resist film. | 01-15-2009 |
20090035705 | METHOD OF FORMING PATTERN, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND CLEANING APPARATUS - A method of forming a pattern includes forming a resist layer on a substrate, cleaning a surface of the substrate under a control that a shear stress acting on an interface between a cleaning liquid and the substrate during the cleaning becomes larger than a shear stress acting on an interface between an immersion liquid and the substrate during immersion exposure, exposing the resist layer by the immersion exposure to form a latent image on the resist layer, and developing the resist layer to form a resist pattern on the substrate. | 02-05-2009 |
20090039275 | Processing method, manufacturing method of semiconductor device, and processing apparatus - A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed. | 02-12-2009 |
20090067856 | Image Forming Apparatus - An embodiment according to the invention is characterized in that a waste toner is delivered to a certain place through a rotation of a stirring member (a paddle) for causing the waste toner to be even and the waste toner thus delivered is detected by means of detecting unit (an optical sensor). | 03-12-2009 |
20090190114 | Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof - In immersion exposure, a resist pattern forming method suppressing resist pattern defects comprises mounting a substrate formed a resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus, supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the solution, the first liquid film having a flow and being formed between the resist film and a projection optical system, transferring the pattern of the reticle to the resist film through the first liquid film to form a latent image, supplying a second chemical solution onto the resist film to clean the resist film, heating the resist film, and developing the resist film to form a resist pattern from the resist film. | 07-30-2009 |
20090201472 | LIQUID IMMERSION EXPOSURE APPARATUS AND METHOD OF LIQUID IMMERSION EXPOSURE - A liquid immersion exposure apparatus has a stage on which a substrate to be processed is disposed and that moves based on a position control signal, a projection unit that projects a beam onto the substrate to be processed, a liquid supply unit that supplies liquid between the substrate to be processed and the projection unit, a liquid discharge unit that discharges the liquid held between the substrate to be processed and the projection unit, a gas ejection unit includes a first ejection unit and a second ejection unit disposed so as to surround at least a part of the projection unit and each ejecting gas onto the substrate to be processed, and a control unit that controls an amount of gas flow at the first ejection unit and an amount of the gas flow at the second ejection unit based on a moving speed of the stage while the stage is being moved. | 08-13-2009 |
20090302000 | PATTERN FORMING METHOD - A pattern forming method according to an embodiment of the present invention includes forming, on a substrate, a base pattern having a space part, adjusting a width of the space part to make a bottom width of the space part closer to an upper width of the space part, and forming a modified base pattern having a space part whose bottom width is smaller than the bottom width of the space part of the base pattern, by a process of forming a deposition film on the substrate and the base pattern, and a process of removing the deposition film from a bottom of the space part of the base pattern. | 12-10-2009 |
20090305174 | METHOD OF FORMING RESIST PATTERN - Provided is a method of forming a resist pattern capable of forming a resist pattern, whose dimensional variations and defects are reduced as far as possible, with a high throughput. The invention provides a method of forming a resist pattern involving the following: forming a resist film on a substrate; subjecting the resist film to exposure treatment in a pressure-reduced condition after performing pressure-reducing treatment; performing reduced-pressure releasing treatment that releases the resist film from a pressure-reduced condition while humidifying the resist film by introducing a humidity-adjusted gas into the pressure-reduced environment; performing bake treatment that heats the resist film after the reduced-pressure releasing treatment; and developing the resist film. | 12-10-2009 |
20100078860 | IMPRINT METHOD - An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated. | 04-01-2010 |
20100099036 | Pattern forming method and method of manufacturing semiconductor device - A pattern forming method includes forming a resist film on a substrate, coating the resist film with a coating solution which forms a cover film on the resist film to form the cover film on the resist film, transferring a pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film, removing the cover film after the formation of the latent image, conducting a first inspection to inspect whether or not the cover film has a defect between said forming the latent image and said removing the cover film, performing predetermined processing when the defect is found in the first inspection, and developing the resist film to form a resist pattern on the substrate after said removing the cover film. | 04-22-2010 |
20100104984 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A template having a first recess pattern is brought into contact with a mask material formed on a substrate. The mask material with which the first recess pattern is filled is cured. A mask material pattern is formed on the substrate by releasing the template from the mask material. A resist pattern is formed to cover a part of the mask material pattern by forming a resist on the mask material pattern and selectively irradiating radiation onto the resist and thereafter developing the resist. The substrate is processed by using the mask material pattern and the resist pattern as a mask. | 04-29-2010 |
20100104988 | SUBSTRATE TREATING METHOD, SUBSTRATE-PROCESSING APPARATUS, DEVELOPING METHOD, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND METHOD OF CLEANING A DEVELOPING SOLUTION NOZZLE - There is disclosed a developing method of developing a photo-sensitive resist film in which a desired pattern is exposed, including subjecting the exposed photosensitive resist film to a first developing treatment; supplying a cleaning solution having an oxidizing property or alkalinity with respect to the surface of the resist film to the photosensitive resist film subject to the first developing treatment to perform a first cleaning treatment; subjecting the photosensitive resist film subjected to the first cleaning treatment to a second developing treatment; and subjecting the photosensitive resist film subjected to the second developing treatment to a second cleaning treatment. | 04-29-2010 |
20100139421 | EVALUATION METHOD FOR CHEMICAL SOLUTION, QUALIFICATION METHOD FOR CHEMICAL SOLUTION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for evaluating chemical solution includes determining number of particles in liquid for each size of the particles by measurement, expressing a relationship between size of the particles and number of particles corresponding to the size by a function based on the number of particles for each size of the particles determined by the measurement, and evaluating influence of particles having size less than or equal to a measurement limit in the liquid based on the function. | 06-10-2010 |
20110008545 | FILM FORMING METHOD, FILM FORMING APPARATUS, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS - There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10 | 01-13-2011 |
20110039214 | Pattern Forming Method and Method of Manufacturing Semiconductor Device - A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film. | 02-17-2011 |
20110070680 | Pattern forming method and manufacturing method of semiconductor device - A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask. | 03-24-2011 |
20110070733 | TEMPLATE AND PATTERN FORMING METHOD - A template for imprinting in which a pattern is transferred onto a first substrate applied curable resin thereon, including a second substrate having a surface to be contacted with the curable resin, a concave portion provided on the surface and corresponding to a pattern to be transferred onto the first substrate, and at least one convex portion arranged in the concave portion to decrease volume of the concave portion. | 03-24-2011 |
20110075119 | Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof - In immersion exposure, a resist pattern forming method suppressing resist pattern defects comprises mounting a substrate formed a resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus, supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the solution, the first liquid film having a flow and being formed between the resist film and a projection optical system, transferring the pattern of the reticle to the resist film through the first liquid film to form a latent image, supplying a second chemical solution onto the resist film to clean the resist film, heating the resist film, and developing the resist film to form a resist pattern from the resist film. | 03-31-2011 |
20110212255 | FILM FORMING METHOD, FILM FORMING APPARATUS, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS - There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10 | 09-01-2011 |
20110229826 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD TO FORM RESIST PATTERN, AND SUBSTRATE PROCESSING APPARATUS - This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure. | 09-22-2011 |
20110244131 | METHOD AND APPARATUS FOR TEMPLATE SURFACE TREATMENT, AND PATTERN FORMING METHOD - According to an embodiment, a template surface treatment method includes hydroxylating the surface of a template having an uneven pattern surface or absorbing water onto the surface to distribute OH radicals on the surface, and coupling a coupling agent onto the template surface on which the OH radicals are distributed. These processes are performed in an environment in which amines are controlled to be in a predetermined concentration or less. | 10-06-2011 |
20110266705 | TEMPLATE REPAIR METHOD, PATTERN FORMING METHOD, AND TEMPLATE REPAIR APPARATUS - A template repair method according to one embodiment is a method for repairing a template including a template base material and a first mold release layer formed on a pattern surface of the template base material, and a restorative material is supplied to the pattern surface of the template base material in the template repair method. The restorative material has affinity to the base material and non-affinity to the mold release layer. | 11-03-2011 |
20120231629 | TEMPLATE AND PATTERN FORMING METHOD - A template for imprinting in which a pattern is transferred onto a first substrate applied curable resin thereon, including a second substrate having a surface to be contacted with the curable resin, a concave portion provided on the surface and corresponding to a pattern to be transferred onto the first substrate, and at least one convex portion arranged in the concave portion to decrease volume of | 09-13-2012 |
20120248065 | METHOD FOR FORMING A PATTERN - According to one embodiment, a pattern forming methoo is disclosed. A film is formed on a substrate to be processed. A gaps is formed in a surface of the film. A photo-curable imprinting agent is supplied on the film surface in which the gaps are formed. The agent is contacted with a template including a concave pattern. The contacting is configured to fill the concave pattern with the agent. Light is applied to the agent while the agent is contacted with the template, wherein the agent is cured by the light. The template is separated from the substrate, wherein a pattern of the cured agent is formed on the substrate. | 10-04-2012 |
20130014360 | STAGE APPARATUS AND PROCESS APPARATUSAANM INANAMI; RyoichiAACI Yokohama-shiAACO JPAAGP INANAMI; Ryoichi Yokohama-shi JPAANM ITO; ShinichiAACI Yokohama-shiAACO JPAAGP ITO; Shinichi Yokohama-shi JPAANM KOIZUMI; HiroshiAACI Hiratsuka-shiAACO JPAAGP KOIZUMI; Hiroshi Hiratsuka-shi JPAANM KOJIMA; AkihiroAACI Yokohama-shiAACO JPAAGP KOJIMA; Akihiro Yokohama-shi JP - According to one embodiment, a stage apparatus includes a height control unit includes height control elements each which is drove in an upward/downward direction independently, a measuring unit which divides an upper surface of the substrate into areas, and measures a height of each of the areas. The control unit is configured to set the height of each of the areas independently by controlling a height of each of the height control elements based on a data value, determine using the measuring unit whether the height of each of the areas in the upper surface of the substrate is in a allowable range, and set the height of the area out of the allowable range again by the height control elements. | 01-17-2013 |
20140295669 | PATTERN FORMING METHOD - According to one embodiment, a pattern forming method includes forming a first guide layer on a processed film, phase-separating a first self-assembly material with the use of the first guide layer to form a first self-assembly pattern including a first polymer portion and a second polymer portion, selectively removing the first polymer portion, forming a second guide layer with the use of the second polymer portion, and phase-separating a second self-assembly material with the use of the second guide layer to form a second self-assembly pattern including a third polymer portion and a fourth polymer portion. | 10-02-2014 |