Shingo Ohta
Shingo Ohta, Chiba JP
Patent application number | Description | Published |
---|---|---|
20100238497 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND PROGRAM PRODUCT - An image processing apparatus includes an input control unit that receives the input of document data that is a target to be output and the output condition of the document data, an image output unit that outputs the document data in accordance with the received output condition, an HDD that stores therein the output condition under which the document data has been output, as a re-output condition to be set at a time when the document data is re-output, and a display control unit that displays the re-output condition on an operation display unit and, when a dependent item that is determined to be set together with a different item is present in the re-output condition, the display control unit displays a dependence-destination item that is the different item together with the re-output condition. | 09-23-2010 |
20100239171 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND PROGRAM PRODUCT - A storage unit stores therein a plurality of document data and a reoutput condition associated with any of the document data. The reoutput condition defines an output condition used when the document data is reoutput. A selection receiving unit receives selections of the document data including at least one reoutput-conditioned document data that is associated with the reoutput condition as document data to be output. A condition setting unit sets the reoutput condition associated with selected reoutput-conditioned document data as the output condition. An image output unit outputs all the document data of which the selections are received by the selection receiving unit on the output condition set by the condition setting unit. | 09-23-2010 |
Shingo Ohta, Kyoto JP
Patent application number | Description | Published |
---|---|---|
20090001382 | Schottky barrier diode and method for making the same - A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed. | 01-01-2009 |
Shingo Ohta, Nagoya-Shi JP
Patent application number | Description | Published |
---|---|---|
20110244337 | GARNET-TYPE LITHIUM ION-CONDUCTING OXIDE AND ALL-SOLID-STATE LITHIUM ION SECONDARY BATTERY CONTAINING THE SAME - An all-solid-state lithium ion secondary battery containing a novel garnet-type oxide serving as a solid electrolyte. The garnet-type lithium ion-conducting oxide is one represented by the formula Li | 10-06-2011 |
20120183887 | ORIENTED AMORPHOUS CARBON FILM AND PROCESS FOR FORMING THE SAME - The oriented amorphous carbon film contains C as a main component, 3 to 20 at. % of N, and more than 0 at. % and not more than 20 at. % of H, and when the total amount of the C is taken as 100 at. %, the amount of C having an sp | 07-19-2012 |
20140162113 | ALL-SOLID-STATE LITHIUM SECONDARY BATTERY AND METHOD FOR PRODUCING THE SAME - An all-solid-state lithium secondary battery includes a positive electrode; a negative electrode; and a solid electrolyte arranged between the positive and negative electrodes, to conduct lithium ions. In the all-solid-state lithium secondary battery, a mixed layer is in close contact with a surface of the solid electrolyte adjacent to the positive electrode, the mixed layer containing the positive-electrode active material and (Li | 06-12-2014 |
Shingo Ohta, Kyoto-Shi JP
Patent application number | Description | Published |
---|---|---|
20110250736 | SCHOTTKY BARRIER DIODE AND METHOD FOR MAKING THE SAME - A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed. | 10-13-2011 |
20130244409 | SCHOTTKY BARRIER DIODE AND METHOD FOR MAKING THE SAME - A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed. | 09-19-2013 |
Shingo Ohta, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20130235428 | IMAGE PROCESSING SYSTEM AND IMAGE PROCESSING APPARATUS - An image processing system, having an image processing apparatus, includes a log management section configured to manage logs recording operations executed on the image processing apparatus, condition data to specify a characteristic of an operation needing to be checked, data for generating items to specify items in the logs to be preserved, and a storage device to store the specified items in the logs, wherein the log management section determines whether an executed operation satisfying the characteristic in the condition data has been executed, then upon a positive determination, specifies items corresponding to the executed operation in the logs to be preserved according to the data for generating items. | 09-12-2013 |
Shingo Ohta, Nagakute-Shi JP
Patent application number | Description | Published |
---|---|---|
20150056519 | GARNET-TYPE ION CONDUCTING OXIDE, COMPLEX, LITHIUM SECONDARY BATTERY, MANUFACTURING METHOD OF GARNET-TYPE ION CONDUCTING OXIDE AND MANUFACTURING METHOD OF COMPLEX - An all-solid lithium secondary battery | 02-26-2015 |