Patent application number | Description | Published |
20090057539 | SOLID-STATE IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS USING SUCH SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - A back-illuminated type solid-state image pickup device ( | 03-05-2009 |
20090065681 | SOLID-STATE IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS USING SUCH SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - A back-illuminated type solid-state image pickup device ( | 03-12-2009 |
20100045833 | SOLID-STATE IMAGING APPARATUS AND CAMERA - A solid-state imaging apparatus including a plurality of sensors that are formed on a substrate on a pixel basis and photoelectrically convert the light incident from a first surface side of the substrate, and a readout circuit that is formed on a second surface side of the substrate, which is the opposite side to the first surface side, and processes a signal from the plurality of sensors. The readout circuit includes a plurality of transistors and the transistors are disposed in a region between the pixels in an aligned manner. | 02-25-2010 |
20100045834 | SOLID-STATE IMAGING APPARATUS AND CAMERA - A solid-state imaging apparatus including a plurality of sensors that are formed on a substrate on a pixel basis and photoelectrically convert the light incident from a first surface side of the substrate, and a readout circuit that is formed on a second surface side of the substrate, which is the opposite side to the first surface side, and processes a signal from the plurality of sensors. The readout circuit includes a plurality of transistors and the transistors are disposed in a region between the pixels in an aligned manner. | 02-25-2010 |
20100264474 | SOLID-STATE IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS USING SUCH SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - A back-illuminated type solid-state image pickup device ( | 10-21-2010 |
20100267185 | SOLID-STATE IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS USING SUCH SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - A back-illuminated type solid-state image pickup device ( | 10-21-2010 |
20110156111 | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device - A back-illuminated type solid-state image pickup device ( | 06-30-2011 |
20120086092 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a substrate in which a plurality of pixels including photoelectric converters are formed, a wiring layer that includes wirings in a plurality of layers formed via an interlayer insulating film in a front surface side of the substrate, a base electrode pad portion that includes a portion of the wirings formed in the wiring layer, an opening that penetrates the substrate from a rear surface side of the substrate and reaches the base electrode pad portion, and an embedded electrode pad layer that is formed so as to be embedded in the opening by electroless plating. | 04-12-2012 |
20140175592 | SEMICONDUCTOR IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME - A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array. | 06-26-2014 |
Patent application number | Description | Published |
20100201854 | SOLID-STATE IMAGE PICK-UP DEVICE AND MANUFACTURING METHOD THEREOF, IMAGE-PICKUP APPARATUS, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR SUBSTRATE - A solid-state image pick-up device is provided which includes a semiconductor substrate main body which has an element forming layer and a gettering layer provided on an upper layer thereof; photoelectric conversion elements, each of which includes a first conductive type region, provided in the element forming layer; and a dielectric film which is provided on an upper layer of the gettering layer and which induces a second conductive type region in a surface of the gettering layer. | 08-12-2010 |
20140045291 | SOLID-STATE IMAGE PICK-UP DEVICE AND MANUFACTURING METHOD THEREOF, IMAGE-PICKUP APPARATUS, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR SUBSTRATE - A solid-state image pick-up device is provided which includes a semiconductor substrate main body which has an element forming layer and a gettering layer provided on an upper layer thereof; photoelectric conversion elements, each of which includes a first conductive type region, provided in the element forming layer; and a dielectric film which is provided on an upper layer of the gettering layer and which induces a second conductive type region in a surface of the gettering layer. | 02-13-2014 |
20140357011 | SOLID-STATE IMAGE PICK-UP DEVICE AND MANUFACTURING METHOD THEREOF, IMAGE-PICKUP APPARATUS, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR SUBSTRATE - A solid-state image pick-up device is provided which includes a semiconductor substrate main body which has an element forming layer and a gettering layer provided on an upper layer thereof; photoelectric conversion elements, each of which includes a first conductive type region, provided in the element forming layer; and a dielectric film which is provided on an upper layer of the gettering layer and which induces a second conductive type region in a surface of the gettering layer. | 12-04-2014 |