Patent application number | Description | Published |
20090028861 | Cancer cell-specific apoptosis-inducing agents that target chromosome stabilization-associated genes - The present inventors discovered that inhibition of the expression of various genes associated with chromosome stabilization induces cancer cell-specific apoptosis and inhibits cell proliferation. Compounds that inhibit expression of a gene associated with chromosome stabilization or inhibit the function of a protein encoded by such a gene are thought to have cancer cell-specific apoptosis-inducing effects. | 01-29-2009 |
20100168209 | APOPTOSIS INDUCER FOR CANCER CELL - The present invention revealed that by suppressing the expression of the WRN gene, the BLM gene, or the RecQ1 gene, which belong to the RecQ helicase family, apoptosis is induced in various cancer cells and their proliferation is suppressed. Compounds that suppress the expression of RecQ helicase family genes or the functions of RecQ helicase proteins are thought to have the activity of inducing apoptosis. | 07-01-2010 |
20120225928 | CANCER CELL-SPECIFIC APOPTOSIS-INDUCING AGENTS THAT TARGET CHROMOSOME STABILIZATION-ASSOCIATED GENES - The present inventors discovered that inhibition of the expression of various genes associated with chromosome stabilization induces cancer cell-specific apoptosis and inhibits cell proliferation. Compounds that inhibit expression of a gene associated with chromosome stabilization or inhibit the function of a protein encoded by such a gene are thought to have cancer cell-specific apoptosis-inducing effects. | 09-06-2012 |
20130090370 | APOPTOSIS INDUCER FOR CANCER CELL - The present invention revealed that by suppressing the expression of the WRN gene, the BLM gene, or the RecQ1 gene, which belong to the RecQ helicase family, apoptosis is induced in various cancer cells and their proliferation is suppressed. Compounds that suppress the expression of RecQ helicase family genes or the functions of RecQ helicase proteins are thought to have the activity of inducing apoptosis. | 04-11-2013 |
20130245097 | CANCER CELL-SPECIFIC APOPTOSIS-INDUCING AGENTS THAT TARGET CHROMOSOME STABILIZATION-ASSOCIATED GENES - The present inventors discovered that inhibition of the expression of various genes associated with chromosome stabilization induces cancer cell-specific apoptosis and inhibits cell proliferation. Compounds that inhibit expression of a gene associated with chromosome stabilization or inhibit the function of a protein encoded by such a gene are thought to have cancer cell-specific apoptosis-inducing effects. | 09-19-2013 |
Patent application number | Description | Published |
20080224826 | RFID Tag Reader and Method for Calibrating RFID Tag Reader - An RFID tag reader having an antenna for communication with an RFID tag, a high frequency circuit for processing a communication signal with the RFID tag, a signal line for connecting the antenna with the high frequency circuit, and an impedance matching circuit for impedance matching between the antenna and the signal line includes: a detection unit for detecting a calibration RFID tag provided in a predetermined reading range; and a calibration unit for calibrating the high frequency circuit or matching circuit so that the calibration RFID tag can be detected by the detection unit. | 09-18-2008 |
20080238682 | RFID TAG READER - A control unit of a reader superimposes a control signal for antenna switching on a high frequency signal outputted into an antenna unit from a high frequency circuit. The antenna unit includes: separators for separating the superimposed signals into high frequency signals and control signals; a switch circuit for switching loop antennas; and a control circuit for controlling the switch circuit based on the control signal separated by the separator. | 10-02-2008 |
20080297314 | Inventory Management System - In the inventory management system managing the inventory status of a commodity displayed in a showcase by using a computer, the showcase is provided with an antenna for communicating with an RFID tag attached to a commodity on a commodity shelf, detecting means for detecting a unique number of the RFID tag by communicating with the RFID tag through the antenna, and transmitting means for transmitting the detected unique number of the RFID tag to the computer through a network. The computer manages the commodity inventory based on the unique number of the RFID tag, the unique number being received from the showcase. | 12-04-2008 |
20110109169 | ANTENNA UNIT FOR READING RFID TAG - An antenna unit includes a plurality of loop antennas; an impedance matching circuit common to the loop antennas; a switching circuit that switches high frequency connection between the impedance matching circuit and the loop antenna; and an antenna control circuit that controls to connect only one loop antenna among the loop antennas in a high frequency manner on the basis of a control signal from a reader. | 05-12-2011 |
Patent application number | Description | Published |
20110074017 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND MULTILAYER WAFER STRUCTURE - Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line. | 03-31-2011 |
20120184068 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method includes the steps of: (a) fixing a front surface of a wafer (semiconductor wafer) having the front surface, a plurality of chip regions formed on the front surface, a dicing region formed between the chip regions, and a rear surface opposite to the front surface to the supporting member; (b) in a state of having the wafer fixed to the supporting member, grinding the rear surface of the wafer to expose the rear surface; (c) in a state of having the wafer fixed to the supporting member, dividing the wafer into the chip regions; (d) etching side surfaces of the chip regions to remove crushed layers formed in the step (c) on the side surfaces and obtain a plurality of semiconductor chips. After the steps (e) and (d), the plurality of divided chip regions are peeled off from the supporting member to obtain a plurality of semiconductor chips. | 07-19-2012 |
20140220740 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND MULTILAYER WAFER STRUCTURE - Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line. | 08-07-2014 |
Patent application number | Description | Published |
20130071733 | NONAQUEOUS ELECTROLYTE SOLUTION AND ELECTROCHEMICAL ELEMENT USING SAME - The present invention provides a nonaqueous electrolytic solution which can improve the electrochemical characteristics in a broad temperature range, an electrochemical element produced by using the same and a sulfonic ester compound having a branched structure which is used for the same. | 03-21-2013 |
20130115520 | NON-AQUEOUS ELECTROLYTIC SOLUTION, AND ELECTROCHEMICAL ELEMENT UTILIZING SAME - The present invention relates to a nonaqueous electrolytic solution which can improve the electrochemical characteristics in a broad temperature range and an electrochemical element produced by using the same. | 05-09-2013 |
20140030610 | NON-AQUEOUS ELECTROLYTE SOLUTION AND ELECTRICITY-STORAGE DEVICE USING SAME - The present invention provides a nonaqueous electrolytic solution capable of improving electrochemical characteristics at high temperatures, which comprises at least one organic phosphorus compound represented by the following general formula (I), an energy storage device using the nonaqueous electrolytic solution, and a specific organic phosphorus compound. | 01-30-2014 |
20140154587 | NON-AQUEOUS ELECTROLYTE AND ELECTRICITY STORAGE DEVICE USING SAME - The present invention provides a nonaqueous electrolytic solution capable of improving electrochemical characteristics in a broad temperature range, such as low-temperature cycle properties and low-temperature discharge properties after high-temperature storage, and provides an energy storage device using the nonaqueous electrolytic solution. The invention includes (1) a nonaqueous electrolytic solution of an electrolyte salt dissolved in a nonaqueous solvent, which comprises from 0.001 to 10% by mass of a compound represented by the following general formula (I), and (2) an energy storage device comprising a positive electrode, a negative electrode, and a nonaqueous electrolytic solution of an electrolyte salt dissolved in a nonaqueous solvent, wherein the nonaqueous electrolytic solution is the nonaqueous electrolytic solution of (1). | 06-05-2014 |
20140212770 | NONAQUEOUS ELECTROLYTE SOLUTION AND ELECTROCHEMICAL ELEMENT USING SAME - Disclosed are a non-aqueous electrolytic solution that exhibits excellent electrochemical characteristics over a wide temperature range, and an electrochemical device using the non-aqueous electrolytic solution. The non-aqueous electrolytic solution includes a non-aqueous solvent and an electrolyte salt dissolved in the non-aqueous solvent, wherein the non-aqueous electrolytic solution further comprises one compound represented by general formula (I): | 07-31-2014 |
Patent application number | Description | Published |
20120118936 | Ni BASE ALLOY SOLID WIRE FOR WELDING - An object of the present invention is to provide a Ni base alloy solid wire for welding, which has excellent cracking resistance to ductility dip cracking in weld metal, can increase the tensile strength of the weld metal to not less than the tensile strength of the base material, and has excellent weldability. The present invention provides a solid wire which has a composition containing Cr: 27.0 to 31.5 mass %, Ti: 0.50 to 0.90 mass %, Nb: 0.40 to 0.70 mass %, Ta: 0.10 to 0.30 mass %, C: 0.010 to 0.030 mass %, and Fe: 5.0 to 11.0 mass %, and is regulated to Al: 0.10 mass % or less, N: 0.020 mass % or less, Zr 0.005 mass % or less, P:0.010 mass % or less, S: 0.0050 mass % or less, Si: 0.50 mass % or less, and Mn: 1.00 mass % or less, with the balance including Ni and inevitable impurities. | 05-17-2012 |
20140017112 | BEARING STEEL MATERIAL WITH EXCELLENT ROLLING CONTACT FATIGUE PROPERTIES AND A BEARING PART - Bearing steel material according to the present invention has: a properly adjusted chemical composition; an average chemical composition of oxide-inclusions which comprises 10 to 45% of CaO, 20 to 45% of Al | 01-16-2014 |
20150114944 | NI BASED ALLOY FLUX CORED WIRE - A Ni based alloy flux cored wire including a Ni based alloy as a sheath is provided, wherein the sheath contains predetermined ranges of Ni, Cr, Mo, Ti, Al, and Mg relative to the total mass of the sheath, control is made to ensure predetermined C and Si, the composition of the whole wire, which is the sum total of the sheath components and flux components enveloped in the sheath, contains predetermined ranges of Ni, Cr, Mo, Mn, W, Fe, Ti, Al, and Mg relative to the total mass of the wire, and control is made to ensure predetermined C, Si, Nb, P, and S. | 04-30-2015 |
20150147223 | BEARING STEEL MATERIAL WITH EXCELLENT ROLLING FATIGUE PROPERTY AND BEARING PART - A bearing steel material which contains 0.8-1.1 mass % C, 0.15-0.8 mass % Si, 0.1-1.0 mass % Mn, 1.3-1.8 mass % Cr, up to 0.05 mass % P (0 mass % is excluded), up to 0.015 mass % S (0 mass % excluded), 0.0002-0.005 mass % Al, 0.0002-0.0020 mass % Ca, 0.0005-0.010 mass % Ti, up to 0.0080 mass % N (0 mass % is excluded), and up to 0.0025 mass % O (0 mass % is excluded). The steel material contains oxide inclusions which have an average composition that comprises, in terms of mass %, 20-50% CaO, 20-50% Al | 05-28-2015 |
Patent application number | Description | Published |
20100193090 | STEEL FOR MACHINE AND STRUCTURAL USE HAVING EXCELLENT MACHINABILITY AND PROCESS FOR PRODUCING THE SAME - The present invention provides a steel for machine and structural use which is capable of maintaining mechanical characteristics such as strength by reducing a S content as well as of exhibiting excellent machinability (particularly tool life) in intermittent cutting (such as hobbing) with the high speed tool, and a method useful for producing the steel for machine and structural use. The steel for machine and structural use according to the invention secures 0.002% or more of solute N in the steel and has a chemical composition which is appropriately adjusted and satisfies a relationship of the following expression (1): (0.1×[Cr]+[Al])/[O]≧150 . . . (1), in which [Cr], [Al], and [0] represent a Cr content (mass %), an Al content (mass %), and an O content (mass %), respectively. | 08-05-2010 |
20120063945 | STEEL FOR MACHINE STRUCTURAL USE - Provided is a steel for machine structural use which has excellent machinability (particularly, with respect to tool life) for both intermittent cutting with a high-speed steel tool and continuous cutting with a cemented carbide tool while maintaining strength properties required of the steel for machine structural use. Specifically, the steel for machine structural use contains C: 0.05-0.9 mass %, Si: 0.03-2 mass %, Mn: 0.2-1.8 mass %, P: 0.03 mass % or less, S: 0.03 mass % or less, Al: 0.1-0.5 mass %, N: 0.002-0.017 mass %, and O: 0.003 mass % or less, and contains one or more selected from a group consisting of Ti: 0.05 mass % or less (excluding 0 mass %) and B: 0.008 mass % or less (excluding 0 mass %), with the remainder being iron and unavoidable impurities, and satisfies all of the following inequalities (1)-(3) below: | 03-15-2012 |
Patent application number | Description | Published |
20130157065 | INTERMEDIATE FILM FOR LAMINATED GLASS AND LAMINATED GLASS - The present invention provides an interlayer film for laminated glass which can give a laminated glass with better sound insulation when used in the laminated glass. | 06-20-2013 |
20130183507 | INTERMEDIATE FILM FOR LAMINATED GLASS AND LAMINATED GLASS - The present invention aims to provide an intermediate film for laminated glass which, in the case of being used for constituting a laminated glass, enables to improve the sound-insulating property in a high frequency range of the obtained laminated glass over a wide range of temperature. The intermediate film for laminated glass of the present invention | 07-18-2013 |
20130183532 | LAMINATED GLASS INTERLAYER AND LAMINATED GLASS - The present invention aims to provide an intermediate film for laminated glass which, in the case of being used for constituting a laminated glass, enables to improve the sound-insulating property of the obtained laminated glass, and a laminated glass. The intermediate film | 07-18-2013 |
20130189528 | INTERMEDIATE FILM FOR LAMINATED GLASS AND LAMINATED GLASS - The present invention aims to provide an intermediate film for laminated glass which, in the case of being used for constituting a laminated glass, enables to improve the sound-insulating property in a high frequency range of the obtained laminated glass over a wide range of temperature; and a laminated glass. The intermediate film | 07-25-2013 |
20130202863 | INTERLAYER FOR LAMINATED GLASS AND LAMINATED GLASS - The present invention aims to provide an intermediate film for laminated glass which, in the case of being used for constituting a laminated glass, enables to improve the sound-insulating property of a laminated glass to be obtained; and a laminated glass. The intermediate film | 08-08-2013 |
20130323516 | LAMINATED GLASS INTERMEDIATE FILM AND LAMINATED GLASS - The present invention provides an intermediate film for laminated glass which can improve the sound-insulating property. The intermediate film for laminated glass according to the present invention has a layered structure including at least two layers, comprising: a first layer containing a polyvinyl acetal resin and a plasticizer; and a second layer positioned on a first surface of the first layer. In a phase diagram of three values including a degree of acetalization, a degree of acetylation, and a hydroxy group content of the polyvinyl acetal resin contained in the first layer, the values of the degree of acetalization, the degree of acetylation, and the hydroxy group content each fall within a region surrounded by a line including four straight lines connecting a first coordinate (degree of acetalization:degree of acetylation:hydroxy group content=70 mol %:30 mol %:0 mol %), a second coordinate (degree of acetalization:degree of acetylation:hydroxy group content=34 mol %:30 mol %:36 mol %), a third coordinate (degree of acetalization:degree of acetylation:hydroxy group content=94 mol %:0 mol %:6 mol %), and a fourth coordinate (degree of acetalization:degree of acetylation:hydroxy group content=100 mol %:0 mol %:0 mol %) in the stated order. | 12-05-2013 |
20140044941 | INTERLAYER FOR LAMINATED GLASS AND LAMINATED GLASS - The present invention provides an interlayer film for laminated glass which can enhance, when used in a laminated glass, the sound-insulating property of the laminated glass in a high frequency range over a wide temperature range. | 02-13-2014 |
Patent application number | Description | Published |
20140349124 | INTERLAYER FOR LAMINATED GLASS AND LAMINATED GLASS - The present invention provides an interlayer for laminated glass which, when used to compose laminated glass, is capable of increasing sound insulation for the obtained laminated glass; and laminated glass. The interlayer for laminated glass according to the present invention includes a first layer, and a second layer which is laminated on a first surface of the first layer, and the first layer contains a polyvinyl acetal resin, a plasticizer and a tackifier; and the laminated glass according to the present invention includes first and second components for laminated glass and the interlayer disposed between the first and second components for laminated glass. | 11-27-2014 |
20150030860 | INTERMEDIATE FILM FOR LAMINATED GLASS, AND LAMINATED GLASS - An interlayer film for laminated glass that can improve a sound insulation property of an obtained laminated glass when the interlayer film for laminated glass is used for configuring the laminated glass is provided. The interlayer film for laminated glass according to the present invention includes a first layer and a second layer laminated on a first surface of the first layer. The first layer includes a polyvinyl acetate resin and a plasticizer. | 01-29-2015 |
20150258751 | INTERLAYER FOR LAMINATED GLASS, AND LAMINATED GLASS - There is provided an interlayer film for laminated glass which is capable of enhancing sound insulating properties in the laminated glass obtained in the case of being used for constituting the laminated glass, and laminated glass prepared using the interlayer film for laminated glass. An interlayer film for laminated glass according to the present invention includes a modified polyvinyl acetate and a plasticizer, and the modified polyvinyl acetate has a vinyl acetate structural unit and a fatty acid vinyl ester structural unit; the laminated glass according to the present invention includes a first laminated glass constituent member, a second laminated glass constituent member, and an interlayer film sandwiched between the first and second laminated glass constituent members, and in the laminated glass according to the present invention, the interlayer film is the interlayer film for laminated glass described above. | 09-17-2015 |
Patent application number | Description | Published |
20150062286 | APPARATUS, SYSTEM, AND METHOD OF MANAGING DATA, AND RECORDING MEDIUM - A transmission management system stores association information that associates, for each one of a plurality of starting terminals, starting terminal identification information for identifying the starting terminal capable of requesting to start communication with one or more candidate counterpart terminals, and candidate counterpart terminal identification information for identifying each one of the one or more candidate counterpart terminals. In response to receiving a request for deleting at least one candidate counterpart terminal selected from the one or more candidate counterpart terminals, for at least one starting terminal selected from the plurality of starting terminals, the management system specifies candidate counterpart terminal identification information of the selected candidate counterpart terminal using the association information, and deletes the candidate counterpart terminal identification information of the selected candidate counterpart terminal from one or more candidate counterpart terminals being associated with the selected starting terminal. | 03-05-2015 |
20150264311 | APPARATUS, METHOD, AND RECORD MEDIUM OF TRANSMISSION MANAGEMENT - A transmission management apparatus, method, and recording medium are provided, including a memory configured to store address information that associates, for each one of a plurality of request source terminals, request source terminal identification information and candidate counterpart terminal identification information; a receiver configured to receive connection request information from a transmission terminal as the request source terminal; and processing circuitry configured to: determine whether to provide status information of the transmission terminal of another transmission management apparatus, based on information of said another apparatus associated with the at least one candidate counterpart terminal, to generate a determination result when the receiver receives the connection request information, provide the status information of the transmission terminal of said another apparatus based on the determination result, and acquire status information of the at least one candidate counterpart terminal managed by said another apparatus included in the address information of the transmission terminal. | 09-17-2015 |
Patent application number | Description | Published |
20130237064 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a raw material gas to a substrate in a process chamber, exhausting the raw material gas remaining in the process chamber through an exhaust line, supplying an amine-based gas; and exhausting the amine-based gas through the exhaust line with the supply of the amine-based gas stopped. A degree of valve opening of an exhaust valve disposed in the exhaust line is changed in multiple steps in the process of exhausting the amine-based gas. | 09-12-2013 |
20130252435 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - An object of the present invention is to form a good thin film while suppressing generation of foreign substances in a low temperature region. Provided is a method of manufacturing a semiconductor device, including: (a) forming a thin film containing at least a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container; and supplying an amine-based gas to the substrate in the process container; and (b) modifying byproducts adhered to an inside of the process container by supplying a nitriding gas into the process container after forming the thin film | 09-26-2013 |
20140057452 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate by performing a cycle for a first predetermined number of times. The cycle includes forming a first layer containing the predetermined element, a halogen group, carbon and nitrogen by supplying a first precursor gas containing the predetermined element and the halogen group and a second precursor gas containing the predetermined element and an amino group to the substrate, for a second predetermined number of times; and forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a reaction gas containing a borazine compound to the substrate and allowing the first layer to react with the borazine compound to modify the first layer under a condition where the borazine ring skeleton in the borazine compound is maintained. | 02-27-2014 |
20140073142 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A thin film having high HF resistance and a low dielectric constant can be formed in a low temperature range with a high productivity. A thin film including a predetermined element and a borazine ring skeleton is formed on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a source gas including the predetermined element and a halogen group to the substrate and supplying a reaction gas including a borazine compound to the substrate under a condition where the borazine ring skeleton in the borazine compound is maintained. | 03-13-2014 |
20140235067 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A thin film that has a predetermined composition and containing predetermined elements is formed on a substrate by performing a cycle of steps a predetermined number of times, said cycle comprising: a step wherein a first layer containing the predetermined elements, nitrogen and carbon is formed on the substrate by alternately performing, a predetermined number of times, a process of supplying a first source gas containing a predetermined element and a halogen group to the substrate and a process of supplying a second source gas containing a predetermined element and an amino group to the substrate; a step wherein a second layer is formed by modifying the first layer by supplying an amine-based source gas to the substrate; and a step wherein a third layer is formed by modifying the second layer by supplying a reaction gas that is different from the source gases to the substrate. | 08-21-2014 |
20140349492 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM - A semiconductor device manufacturing method includes forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate; supplying an oxidizing gas and a second catalytic gas to the substrate; and supplying a modifying gas containing the specified Group III or Group V element to the substrate. | 11-27-2014 |
20150044881 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - According to the present disclosure, a film containing carbon added at a high concentration is formed with high controllability. A method of manufacturing a semiconductor device includes forming a film containing silicon, carbon and a predetermined element on a substrate by performing a cycle a predetermined number of times. The predetermined element is one of nitrogen and oxygen. The cycle includes supplying a precursor gas containing at least two silicon atoms per one molecule, carbon and a halogen element and having an Si—C bonding to the substrate, and supplying a modifying gas containing the predetermined element to the substrate. | 02-12-2015 |
20150072537 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate | 03-12-2015 |
20150214030 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a raw material gas to a substrate in a process chamber, exhausting the raw material gas remaining in the process chamber through an exhaust line, supplying an amine-based gas; and exhausting the amine-based gas through the exhaust line with the supply of the amine-based gas stopped. A degree of valve opening of an exhaust valve disposed in the exhaust line is changed in multiple steps in the process of exhausting the amine-based gas. | 07-30-2015 |
20150243499 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer. | 08-27-2015 |
20150255274 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer containing the first element and carbon by supplying a precursor gas having a chemical bond of the first element and carbon from a first supply part to the substrate in a process chamber, and forming a second layer by supplying a reaction gas containing the second element from a second supply part to the substrate in the process chamber and supplying a plasma-excited inert gas from a third supply part to the substrate in the process chamber to modify the first layer, the third supply part being different from the second supply part. | 09-10-2015 |
20150332916 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate. | 11-19-2015 |
20150357181 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - Technique includes forming a film containing first element, second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing forming a first solid layer having thickness of more than one atomic layer and equal to or less than several atomic layers and containing chemical bonds of the first element and carbon by supplying a precursor having the chemical bonds to the substrate under a condition where the precursor is pyrolyzed and at least some of the chemical bonds contained in the precursor are maintained without being broken, and forming a second solid layer by plasma-exciting a reactant containing the second element and supplying the plasma-excited reactant to the substrate, or by plasma-exciting an inert gas and supplying the plasma-excited inert gas and a reactant containing the second element which is not plasma-excited to the substrate. | 12-10-2015 |
Patent application number | Description | Published |
20130149873 | Method of Manufacturing Semiconductor Device, Method of Processing Substrate, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium - A thin film including characteristics of low permittivity, high etching resistance and high leak resistance is to be formed. A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing supplying a source gas containing the predetermined element and a halogen element to the substrate and supplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen and having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate a predetermined number of times; and forming a second layer by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer. | 06-13-2013 |
20140287595 | Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Substrate Processing System and Non-Transitory Computer-Readable Recording Medium - A thin film having excellent etching resistance and a low dielectric constant is described. A method of manufacturing a semiconductor device includes forming a thin film on a substrate, removing first impurities containing H | 09-25-2014 |
20150243498 | Method of Manufacturing Semiconductor Device and Substrate Processing Method - A method of manufacturing a semiconductor device for forming a thin film having characteristics of low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; and (d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed. | 08-27-2015 |
Patent application number | Description | Published |
20110123389 | High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis - High purity copper having a purity of 6N or higher, wherein content of each of the respective components of P, S, 0, and C is 1 ppm or less, and nonmetal inclusions having a particle size of 0.5 μm or more and 20 μm or less contained in the copper are 10,000 inclusions/g or less. As a result of using high purity copper or high purity copper alloy as the raw material from which harmful P, S, C, 0-based inclusions have been reduced and controlling the existence form of nonmetal inclusions, it is possible to reduce the occurrence of rupture of a bonding wire and improve the reproducibility of mechanical properties, or reduce the percent defect of a semiconductor device wiring formed by sputtering a high purity copper target with favorable reproducibility. | 05-26-2011 |
20110163447 | High-Purity Copper or High-Purity Copper Alloy Sputtering Target, Process for Manufacturing the Sputtering Target, and High-Purity Copper or High-Purity Copper Alloy Sputtered Film - Provided is a high-purity copper or high-purity copper alloy sputtering target of which the purity is 6N or higher and in which the content of the respective components of P, S, O and C is 1 ppm or less, wherein the number of nonmetal inclusions having a particle size of 0.5 μm or more and 20 μm or less is 30,000 inclusions/g or less. As a result of using high-purity copper or high-purity copper alloy from which harmful inclusions of P, S, C and O system have been reduced as the raw material and controlling the existence form of nonmetal inclusions, the present invention addresses a reduction in the percent defect of wirings of semiconductor device formed by sputtering a high-purity copper target so as to ensure favorable repeatability. | 07-07-2011 |
20130302205 | High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis - High purity copper having a purity of 6N or higher, wherein content of each of the respective components of P, S, 0, and C is 1 ppm or less, and nonmetal inclusions having a particle size of 0.5 μm or more and 20 μm or less contained in the copper are 10,000 inclusions/g or less. As a result of using high purity copper or high purity copper alloy as the raw material from which harmful P, S, C, O-based inclusions have been reduced and controlling the existence form of nonmetal inclusions, it is possible to reduce the occurrence of rupture of a bonding wire and improve the reproducibility of mechanical properties, or reduce the percent defect of a semiconductor device wiring formed by sputtering a high purity copper target with favorable reproducibility. | 11-14-2013 |
Patent application number | Description | Published |
20100240600 | Anti-Norovirus Agent and Composition Containing the Same - Provided is an anti-norovirus agent that has high norovirus-inactivating activity and is safe for the human body, and an anti-norovirus composition that contains the anti-norovirus agent and is useful for disinfection and infection control against the norovirus. The anti-norovirus agent includes, as an active ingredient, an extract from a plant of the genus | 09-23-2010 |
20110027399 | Antiviral Agent and Antiviral Composition - An antiviral agent is provided which has an excellent effect on a non-enveloped virus and which is highly safe to the human body, and an antiviral composition which comprises the antiviral agent and which is useful for disinfection of the virus or prevention of infection of the virus. The antiviral agent comprises as an active ingredient an extract from a plant of the genus | 02-03-2011 |
20130023582 | Method of Disinfection or Infection Control Against Norovirus - An anti-norovirus agent that has high norovirus-inactivating activity and is safe for the human body, and an anti-norovirus composition that contains the anti-norovirus agent and is useful for disinfection and infection control against the norovirus. The anti-norovirus agent includes, as an active ingredient, an extract from a plant of the genus | 01-24-2013 |
20130302453 | "Method for Disinfection or Infection Control Against a Non-Enveloped Virus" - Provided herein is a method for disinfection or infection control against a non-enveloped virus using a composition including, as an active ingredient, a persimmon extract containing tannin from an astringent fruit of a plant of the genus | 11-14-2013 |