Patent application number | Description | Published |
20130209344 | Thermal annealing process - A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(dimethylsiloxane) block copolymer component to a surface of the substrate; optionally, baking the film; subjecting the film to a high temperature annealing process under particularized atmospheric conditions for a specified period of time; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(dimethylsiloxane) in the annealed film to SiO | 08-15-2013 |
20130209693 | Block copolymer and methods relating thereto - A copolymer composition including a block copolymer having a poly(methyl methacrylate) block and a poly((trimethylsilyl)methyl methacrylate) block is provided; wherein the block copolymer exhibits a number average molecular weight, M | 08-15-2013 |
20130209694 | Blended block copolymer composition - A block copolymer composition containing a diblock copolymer blend including a first poly(methyl methacrylate)-b-poly((trimethylsilyl)methyl methacrylate) diblock copolymer; and, a second poly(methyl methacrylate)-b-poly((trimethylsilyl)methyl methacrylate) diblock copolymer. Also provided are substrates treated with the block copolymer composition. | 08-15-2013 |
20130209755 | SELF-ASSEMBLED STRUCTURES, METHOD OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a method of manufacturing self assembled structures that have lamellae or cylinders whose longitudinal axis is parallel or perpendicular to a surface upon which the self assembled structure is disposed. The method comprises disposing a random copolymer on the substrate to form a surface modification layer and disposing a block copolymer on the surface modification layer. The block copolymer is then subjected to etching. | 08-15-2013 |
20140014001 | Thermal annealing process - A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; annealing the film in a gaseous atmosphere containing ≧20 wt % oxygen; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiO | 01-16-2014 |
20140014002 | High temperature thermal annealing process - A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; subjecting the film to a high temperature annealing process under a gaseous atmosphere for a specified period of time; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiO | 01-16-2014 |
20140061155 | Composition and method for preparing pattern on a substrate - A copolymer composition and a method of processing a substrate to form line space features thereon are provided. | 03-06-2014 |
20150183935 | METHODS FOR ANNEALING BLOCK COPOLYMERS AND ARTICLES MANUFACTURED THEREFROM - Disclosed herein is a block copolymer comprising a first block derived from a vinyl aromatic monomer; where the vinyl aromatic monomer has at least one alkyl substitution on an aromatic ring; a second block derived from a siloxane monomer; where a chi parameter that measures interactions between the first block and the second block is 0.03 to 0.18 at a temperature of 200° C. Disclosed herein is a method comprising polymerizing a vinyl aromatic monomer to form a first block; and polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing a siloxane monomer; and where the block copolymer has a chi parameter of 0.03 to 0.18 at a temperature of 200° C.; where the chi parameter is a measure of interactions between the first block and the second block of the copolymer. | 07-02-2015 |
20150184024 | METHOD OF CONTROLLING BLOCK COPOLYMER CHARACTERISTICS AND ARTICLES MANUFACTURED THEREFROM - Disclosed herein is a composition comprising a brush polymer; where the brush polymer comprises a reactive moiety that is reacted to a substrate upon which it is disposed; and a block copolymer; where the block copolymer comprises a first block and a second block that are covalently bonded to each other; where the first block comprises a first polymer and a second block comprises a second polymer; where the first polymer comprises less than or equal to 10 atomic percent polysiloxane; where the second polymer comprises at least 15 atomic percent polysiloxane; where the brush polymer is chemically different from the first polymer and the second polymer; and where the first polymer is chemically different from the second polymer; and wherein the block copolymer is disposed upon the brush polymer. | 07-02-2015 |