Patent application number | Description | Published |
20120313889 | Touch Display Apparatus - A touch Display apparatus is disclosed. The touch Display apparatus includes a backlight module and a sensing plate. The backlight module includes a support member, a light guide plate, and a backlight source. The support member is formed by a non-metallic material and has a bottom and a plurality of sidewalls. The sides of the bottom connect with the sidewalls respectively to form a containing space. The light guide plate is disposed in the containing space and has a light emitting surface. A side of the containing space has a light incident end. The backlight source is disposed corresponding to the light incident end in the containing space. The backlight source generates a light emitting to the light incident end. The sensing plate is disposed on a lower surface of the bottom and senses an action of an item above the support member through an electromagnetic reaction. | 12-13-2012 |
20130127743 | DISPLAY APPARATUS - A display apparatus includes a panel module, an assembly member, a glue layer, and a touch module. The assembly member is engaged with a sidewall of the panel module. The glue layer is disposed on the panel module and at least one portion of the glue layer is disposed on the assembly member. The touch module is disposed on the glue layer. The panel module and the assembly member are adhered to a first side of the glue layer. The touch module is adhered to a second side of the glue layer opposite to the first side. | 05-23-2013 |
20130286682 | LIGHTING DEVICE AND BACK LIGHT MODULE THEREWITH - A lighting device and a back light module therewith are disclosed. The back light module includes a light-guiding structure and a lighting device. The light-guiding structure includes two light-guiding parts and a reflection sheet disposed therebetween. The lighting device is disposed close to the light-guiding structure and includes an insulation carrier and two light sources disposed on the insulation carrier. The insulation carrier includes a positioning groove structure where an edge of the reflection sheet is disposed such that the two light sources correspond to the two light-guiding parts respectively and light emitted by the two light sources is capable of entering the corresponding light-guiding parts. Thereby, the invention uses the single-structure lighting device to simultaneously provide required light to the two light-guiding parts respectively, and uses the positioning structure formed on the lighting device to improve the assembly preciseness of the light-guiding structure with the lighting device. | 10-31-2013 |
20140307473 | BACKLIGHT UNIT FOR USE IN MULTIPLE-DISPLAY DEVICE - A display device includes at least two display panels and a frame for supporting the display panels. The frame includes a partition wall configured for supporting at least an end portion of the display panels. A backlight unit is located at one side of the display panels and provides light to the display panels. The backlight unit includes a strip light source, a longitudinal edge of which is extended along a longitudinal edge of the partition wall for emitting light to the display panels disposed at opposite side of the partition wall and two light-guiding plates disposed at opposite sides of the strip light source for guiding the light emitted from the strip light source into the display panels. | 10-16-2014 |
Patent application number | Description | Published |
20130027926 | LIGHT SOURCE MODULE - A light source module includes a circuit board, a light-emitting diode, a lens, and a lamp screen. An upper surface of the lens has a first recessed portion including a flat surface and a curved side surface. The flat surface is at the center of the upper surface. The curved side surface surrounds the flat surface and stretches to the flat surface from a side surface of the lens to form the first recessed portion. A lower surface of the lens has a second recessed portion defining a recessed space and includes a curved surface and a sidewall portion. The curved surface is a convex surface and opposite to the flat surface. The sidewall portion surrounds the recessed space. An inner surface of the sidewall portion is concaved. The light-emitting diode is disposed in the recessed space. The lamp screen is used to diffuse the light passing through the lens. | 01-31-2013 |
20130201682 | LAMPSHADE AND LED LAMP USING THE SAME - A lampshade and a light-emitting diode (LED) lamp using the same are provided. The lamp includes a lampshade main portion having a curved surface, and a radian of the curved surface of the lampshade main portion is greater than that of a semisphere. The lampshade main portion includes a plurality of lampshade plates. Each of the lampshade plates has a curved surface, and a radian of the curved surface of each of the lampshade plates is less than or equal to that of a semisphere. The lamp includes a base, the lampshade, and light-emitting diodes (LCDs). The lampshade is disposed on the base to form an accommodating space. The LEDs are disposed in the accommodating space to enable the light emitted by the LEDs to be diffused to outside of the LED lamp through the lampshade. | 08-08-2013 |
20140376230 | LIGHT EMITTING DIODE BULB - A light emitting diode bulb includes a lampshade, a lamp housing, a heat sink, a driving circuit, light emitting diode modules and a lamp cap. The lamp housing is connected to the lampshade and includes a cup-shaped casing and a heat conduction part. The heat conduction part is disposed in the cup-shaped casing. The heat sink is disposed in the lampshade and includes a heat-dissipating shell and a heat-dissipating frustum. The heat-dissipating shell covers the heat conduction part. The heat-dissipating frustum includes a top surface, a bottom surface and four side surfaces. The heat-dissipating frustum includes an axis vertical to the bottom surface. An included angle between the axis and each of the side surfaces is smaller than 90 degrees. The light emitting diode modules are adhered to the top surface and the side surfaces and connected to the driving circuit. The lamp cap is connected to the driving circuit. | 12-25-2014 |
20150137678 | LIGHT EMITTING DIODE BULB - A light emitting diode bulb is described, which includes a lamp housing, a light source module, a lampshade and a lamp cap. The lamp housing includes a first adjusting member and a second adjusting member. The first adjusting member includes a first engaging structure, a first acting surface and a second acting surface. The first acting surface and the second acting surface are located on the first engaging structure. The second adjusting member can be moved in relation to the first adjusting member. The second adjusting member includes a second engaging structure corresponding to the first engaging structure, and the second engaging structure has an upper opposing surface and a lower opposing surface. The light source module is disposed on the second adjusting member and can be moved as the second adjusting member is moved. The lampshade and the lamp cap are disposed on the lamp housing respectively. | 05-21-2015 |
Patent application number | Description | Published |
20140368914 | LENS DRIVING DEVICE WITH 3D ELASTIC SUPPORT STRUCTURE - The present invention discloses lens driving device. The lens driving device includes a lens holder for holding a lens having an optical axis; a focusing coil disposed at a periphery of the lens with respect to the optical axis; an optical image stabilizer (OIS) coil structure comprising a plurality of coils; a circuit structure connected electrically to the OIS coil structure and taking control thereof; a plurality of magnets; and an elastic support structure, having an upper plate spring portion and a plurality of suspension wires, wherein each suspension wire disposed substantially parallel with the optical axis and integrally formed with the upper plate spring portion at one end and connected electrically to the circuit structure at the other end. | 12-18-2014 |
20140368915 | OPTICAL IMAGE STABILIZER WITH IMPROVED MAGNETIC SENSITIVITY - The present invention provides a lens driving device that is based on a Voice Coil Actuator (VCA) structure and provides the auto-focusing and optical image stabilization (OIS) functions. According to the present invention, these two functions can be realized by a common magnet scheme, or a separate magnet scheme. Besides, the present invention also provides an improved structure for the lens driving device to enhance the function of OIS thereof. By arranging a magnetic enhancement device below the OIS coils in the lens driving device, the magnetic driving force of the OIS coils and magnetic induction of the Hall sensors, if present, can be enhanced, and the magnetic sensitivity thereof may be also improved. | 12-18-2014 |
20140368936 | LENS DRIVING DEVICE WITH AN IMPROVED OIS COIL STRUCTURE - The present invention provides a VCA-based lens driving device. By way of giving an improved OIS coil structure, a magnetic induction element used to sense movement of magnets atop which maybe cause from a user's hand shaking can be placed as far away from OIS coils as possible. The impact of the magnet field of the OIS coil on the magnetic induction element is thus reduced. In one embodiment, the OIS coil is down-sized to reduce the influence of the OIS coil on the magnetic induction element placed beside it. In another embodiment, the OIS coil has a one-sided indention and the magnetic induction element is placed below/or beside the indention of the OIS coil. | 12-18-2014 |
Patent application number | Description | Published |
20100144121 | Germanium FinFETs Having Dielectric Punch-Through Stoppers - A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fine. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin. | 06-10-2010 |
20100163971 | Dielectric Punch-Through Stoppers for Forming FinFETs Having Dual Fin Heights - A semiconductor structure includes a semiconductor substrate having a first portion and a second portion. A first Fin field-effect transistor (FinFET) is formed over the first portion of the semiconductor substrate, wherein the first FinFET includes a first fin having a first fin height. A second FinFET is formed over the second portion of the semiconductor substrate, wherein the second FinFET includes a second fin having a second fin height different from the first fin height. A top surface of the first fin is substantially level with a top surface of the second fin. A punch-through stopper is underlying and adjoining the first FinFET, wherein the punch-through stopper isolates the first fin from the first portion of the semiconductor substrate. | 07-01-2010 |
20120025313 | Germanium FinFETs Having Dielectric Punch-Through Stoppers - A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fin. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin. | 02-02-2012 |
20120299110 | Dielectric Punch-Through Stoppers for Forming FinFETs Having Dual Fin Heights - A semiconductor structure includes a semiconductor substrate having a first portion and a second portion. A first Fin field-effect transistor (FinFET) is formed over the first portion of the semiconductor substrate, wherein the first FinFET includes a first fin having a first fin height. A second FinFET is formed over the second portion of the semiconductor substrate, wherein the second FinFET includes a second fin having a second fin height different from the first fin height. A top surface of the first fin is substantially level with a top surface of the second fin. A punch-through stopper is underlying and adjoining the first FinFET, wherein the punch-through stopper isolates the first fin from the first portion of the semiconductor substrate. | 11-29-2012 |
20140252488 | Channel Epitaxial Regrowth Flow (CRF) - A Fin-FET fabrication approach and structure are provided using channel epitaxial regrowth flow (CRF). The method includes forming a Fin-FET structure including a Si line on a substrate, shallow trench isolation (STI) oxide on both sides of the Si line on the substrate, and a poly wall on top of and across the STI oxide and the Si line, wherein the Si line is higher than the STI oxide from the substrate. The method further includes thinning the STI oxide and the Si line while maintaining about the same height ratio of the Si line and the STI oxide, and forming a spacer wall adjacent to both sides of the poly wall and further adjacent to Si and STI oxide side walls under the poly wall uncovered due thinning the STI oxide and the Si line. | 09-11-2014 |
20140264725 | SILICON RECESS ETCH AND EPITAXIAL DEPOSIT FOR SHALLOW TRENCH ISOLATION (STI) - The embodiments described provide methods and semiconductor device areas for etching an active area region on a semiconductor body and epitaxially depositing a semiconductor layer overlying the active region. The methods enable the mitigation or elimination of problems encountered in subsequent manufacturing associated with STI divots. | 09-18-2014 |
20150097242 | Channel Epitaxial Regrowth Flow (CRF) - A Fin-FET fabrication approach and structure are provided using channel epitaxial regrowth flow (CRF). The method includes forming a Fin-FET structure including a Si line on a substrate, shallow trench isolation (STI) oxide on both sides of the Si line on the substrate, and a poly wall on top of and across the STI oxide and the Si line, wherein the Si line is higher than the STI oxide from the substrate. The method further includes thinning the STI oxide and the Si line while maintaining about the same height ratio of the Si line and the STI oxide, and forming a spacer wall adjacent to both sides of the poly wall and further adjacent to Si and STI oxide side walls under the poly wall uncovered due thinning the STI oxide and the Si line. | 04-09-2015 |
20150262861 | Dielectric Punch-Through Stoppers for Forming FinFETs Having Dual Fin Heights - A semiconductor structure includes a semiconductor substrate having a first portion and a second portion. A first Fin field-effect transistor (FinFET) is formed over the first portion of the semiconductor substrate, wherein the first FinFET includes a first fin having a first fin height. A second FinFET is formed over the second portion of the semiconductor substrate, wherein the second FinFET includes a second fin having a second fin height different from the first fin height. A top surface of the first fin is substantially level with a top surface of the second fin. A punch-through stopper is underlying and adjoining the first FinFET, wherein the punch-through stopper isolates the first fin from the first portion of the semiconductor substrate. | 09-17-2015 |