Patent application number | Description | Published |
20100096616 | LIGHT-EMITTING AND LIGHT-DETECTING OPTOELECTRONIC DEVICE - An exemplary optoelectronic device includes a substrate and an epitaxial structure formed on the optoelectronic device. The epitaxial structure includes an N-type semiconductor layer, a P-type semiconductor layer, a multi-quantum-well layer and an undoped semiconductor layer. The multi-quantum-well layer is arranged between the N-type semiconductor layer and the P-type semiconductor layer. The undoped semiconductor layer is sandwiched between the N-type semiconductor layer and the multi-quantum-well layer. The undoped semiconductor layer is represented by a general formula Al | 04-22-2010 |
20110045609 | METHOD FOR DETACHING LAYERS WITH LOW MAGNETIC PERMEABILITY - A method for detaching a first material layer from a second material layer includes following steps. Firstly, a high-magnetic-permeability material layer is formed on a first material layer. Secondly, a second material layer is formed on the high-magnetic-permeability material layer. Thirdly, the first and second material layers are cooled such that the first and second material layers shrink, wherein the first and second material layers are low-magnetic-permeability materials. Finally, the high-magnetic-permeability material layer is heated by applying a high-frequency radiofrequency electromagnetic wave thereto such that the high-magnetic-permeability material layer expands, thus detaching the first material layer from the second material layer. | 02-24-2011 |
20110114983 | PHOTOELECTRIC DEVICE HAVING GROUP III NITRIDE SEMICONDUCTOR - A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer. | 05-19-2011 |
20110163295 | SEMICONDUCTOR WITH LOW DISLOCATION - A semiconductor includes a semiconductor layer, a plurality of recesses and a blocking layer. The recesses are formed on a surface of the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. The blocking layer is filled in each recess. The semiconductor further includes a re-epitaxial semiconductor layer grown from a surface of the semiconductor layer without the covering of blocking layer, and the re-epitaxial semiconductor layer laterally overgrows toward areas of the recesses for overlaying the blocking layer. | 07-07-2011 |
20110266552 | LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - A light emitting element includes a substrate, a GaN layer formed on the substrate, a first low refractive index semiconductor layer formed on the GaN layer, and a lighting structure having a high refractive index formed on the first low refractive index semiconductor layer. A second low refractive index semiconductor layer is embedded in the first low refractive index semiconductor layer. The first low refractive index semiconductor layer and the GaN layer exhibit a lattice mismatch therebetween. | 11-03-2011 |
20110278613 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode includes a substrate, a buffer layer on the substrate, a patterned layer having a first reflective index on the buffer layer, a semiconductor layer having a second reflective index on the patterned layer, and an illumination structure on the semiconductor layer. A method for manufacturing the light emitting diode is also provided. | 11-17-2011 |
20110291121 | LIGHT EMITTING ELEMENT PACKAGE - A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the at least two light emitting element modules includes a plurality of light emitting elements. Each light emitting element of the at least two light emitting element modules is electrically coupled to neighboring light emitting element in serial through the solder pads. The at least two light emitting element modules are reversely arranged. The encapsulation member is configured to encapsulate the at least two light emitting element modules on the substrate. | 12-01-2011 |
20120001303 | SEMICONDUCTOR STRUCTURE HAVING LOW THERMAL STRESS AND METHOD FOR MANUFACTURING THEREOF - A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A method for manufacturing the semiconductor structure is also disclosed. | 01-05-2012 |
20120018847 | GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate. | 01-26-2012 |
20120074531 | EPITAXY SUBSTRATE - An epitaxy substrate for growing a plurality of semiconductor epitaxial layers thereon, includes a plurality of growth areas and a plurality of protected areas. The growth areas are provided for growing the semiconductor epitaxial layers thereon. The growth areas and the protected areas are alternating. A thickness of the growth areas is less than ⅓ of a thickness H of the protected areas. | 03-29-2012 |
20120086032 | SEMICONDUCTOR LIGHT-EMITTING STRUCTURE HAVING LOW THERMAL STRESS - A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer. | 04-12-2012 |
20120097976 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region. | 04-26-2012 |
20120100648 | METHOD FOR MANUFACTURING LIGHT EMITTING CHIP - A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels. | 04-26-2012 |
20120100656 | METHOD FOR MAKING A SOLID STATE SEMICONDUCTOR DEVICE - A method for making a solid state semiconductor device includes: providing a substrate; forming a buffer layer on the substrate; forming a first epitaxial layer on the buffer layer; forming a surface-textured second epitaxial layer on the first epitaxial layer by chemical vapor deposition; and forming a solid state stacked layer structure having a PN-junction type light-emitting part on a textured surface of the second epitaxial layer. | 04-26-2012 |
20120142133 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps of providing a substrate with an epitaxial layer thereon. The epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer successively grown on the substrate. The epitaxial layer has dislocation defects traversing the first semiconductor layer, the active layer and the second semiconductor layer. The epitaxial layer is then subjected to an etching process which remove parts of the second semiconductor layer and the active layer along the dislocation defects to form recesses recessing from the second semiconductor layer to the active layer. Thereafter a first electrode and a second electrode are formed on the first semiconductor layer and the second semiconductor layer, respectively. | 06-07-2012 |
20120153332 | EPITAXIAL STRUCTURE OF AN LED AND MANUFACTURING METHOD THEREOF - An epitaxial structure of a light emitting diode (LED) includes a substrate, an epitaxial layer, and a light capturing microstructure. The substrate has a top surface. The epitaxial layer is grown on the top surface of the substrate and has a P-type semiconductor layer, an active layer, and an N-type semiconductor layer in sequence. The light capturing microstructure is positioned on an upper portion of the epitaxial layer which is distant from the substrate. A manufacturing method of an epitaxial structure of an LED is also disclosed. The light capturing microstructure includes at least a concave and an insulating material filled in the at least a concave. | 06-21-2012 |
20120156815 | METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP - A method for fabricating an LED chip includes: providing a sapphire substrate with a SiO | 06-21-2012 |
20120164764 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial regions; forming a first semiconductor layer on the epitaxial regions; forming a second block layer partly covering the first semiconductor layer; forming a lighting structure on an uncovered portion of the first semiconductor layer; removing the first and the second block layers thereby defining clearances at the bottom surfaces of the first semiconductor layer and the lighting structure; and permeating etching solution into the first and second clearances to etch the first semiconductor layer and the lighting structure, thereby to form each of the first semiconductor layer and the lighting structure with an inverted frustum-shaped structure. | 06-28-2012 |
20120164773 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate; forming a first etching layer on the substrate; forming a connecting layer on the first etching layer; forming a second etching layer on the connecting layer; forming a lighting structure on the second etching layer; and etching the first etching layer, the connecting layer, the second etching layer and the lighting structure, wherein an etching rate of the first etching layer and the second etching layer is lager than that of the connecting layer and the lighting structure, thereby to form the connecting layer and the lighting structure each with an inverted frustum-shaped structure. | 06-28-2012 |
20120168797 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light emitting diode chip, comprising steps: providing a substrate with a first patterned blocking layer formed thereon; growing a first n-type semiconductor layer on the substrate between the constituting parts of first patterned blocking layer, and stopping the growth of the first n-type semiconductor layer before the first n-type semiconductor layer completely covers the first patterned blocking layer; removing the first patterned blocking layer, whereby a plurality of first holes are formed at position where the first patterned blocking layer is originally existed; continuing the growth of the first n-type semiconductor layer until the first holes are completely covered by the first n-type semiconductor layer; and forming an active layer and a p-type current blocking layer on the first n-type semiconductor layer successively. | 07-05-2012 |
20120171791 | METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP - A method for fabricating an LED chip is provided. Firstly, a SiO | 07-05-2012 |
20120175628 | LIGHT EMITTING DIODES AND METHOD FOR MANUFACTURING THE SAME - An exemplary LED includes an electrode layer, an LED die, a transparent electrically conductive layer, and an electrically insulating layer. The electrode layer includes a first section and a second section electrically insulated from the first section. The LED die is arranged on and electrically connected to the second section of the electrode layer. The transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. The electrically insulating layer is located between the LED die and the transparent electrically conductive layer to insulate the transparent electrically conductive layer from the second section of the electrode layer. | 07-12-2012 |
20120175630 | LIGHT EMITTING DIODES AND METHOD FOR MANUFACTURING THE SAME - An LED comprises an electrode layer comprising a first a second sections electrically insulated from each other; an electrically conductive layer on the second section, an electrically conductive pole protruding from the electrically conductive layer; an LED die comprising an electrically insulating substrate on the electrically conductive layer, and a P-N junction on the electrically insulating substrate, the P-N junction comprising a first electrode and a second electrode, the electrically conductive pole extending through the electrically insulating substrate to electrically connect the first electrode to the second section; a transparent electrically conducting layer on the LED die, the transparent electrically conducting layer electrically connecting the second electrode to the first section; and an electrically insulating layer between the LED die, the electrically conductive layer, and the transparent electrically conducting layer, wherein the electrically insulating layer insulates the transparent electrically conducting layer from the electrically conductive layer and the second section. | 07-12-2012 |
20120175646 | LIGHT EMITTING DIODE MODULE - An LED module includes a base, a circuit layer formed on the base and multiple LEDs each having an LED die connecting to the circuit layer. The circuit layer includes multiple connecting sections. Each connecting section includes a first connecting part and a second connecting part electrically insulating and spaced from each other. Each LED includes an electrode layer having a first section and a second section electrically insulated from the first section and respectively electrically connecting the first and second connecting parts of a corresponding connecting section. The LED die is electrically connected to the second section. A transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. An electrically insulating layer is located between the LED die and surrounding the LED die except where the transparent electrically conductive layer connects. | 07-12-2012 |
20120190141 | METHOD FOR MANUFACTURING POLYCHROMATIC LIGHT EMITTING DIODE DEVICE HAVING WAVELENGTH CONVERSION LAYER MADE OF SEMICONDCUTOR - A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength. | 07-26-2012 |
20120196391 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps: providing a substrate with an epitaxial layer, the epitaxial layer comprising a first semiconductor layer, a second semiconductor layer and an active layer located between the first semiconductor layer and the second semiconductor layer; dipping the epitaxial layer into an electrolyte to etch surfaces of the epitaxial layer and form a number of holes on the epitaxial layer; and forming electrodes on the epitaxial layer. | 08-02-2012 |
20120205690 | GROUP III-NITRIDE BASED SEMICONDUCTOR LED - A group III-nitride based semiconductor LED includes a sapphire substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer grown sequentially on the sapphire substrate. An n-type strain lattice structure is arranged between the n-type semiconductor layer and the active layer. A lattice constant of the n-type strain lattice structure exceeds that of the active layer, and is less than that of the n-type semiconductor layer. | 08-16-2012 |
20120211771 | LED EPITAXIAL STRUCTURE AND MANUFACTURING METHOD - An LED epitaxial structure includes a substrate, a buffer layer and an epitaxial layer. The buffer layer is grown on a top surface of the substrate, and the epitaxial layer is formed on a surface of the buffer layer. The epitaxial layer has a first n-type epitaxial layer and a second n-type epitaxial layer. The first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer. The first n-type epitaxial layer has a plurality of irregular holes therein. | 08-23-2012 |
20120261696 | LIGHT EMITTING DIODE EPITAXIAL STRUCTURE AND MANUFACTURING METHOD THEREOF - A light emitting device (LED) epitaxial structure includes a substrate, a nitride semiconductor layer, a patterned oxide total-reflective layer, a first-type semiconductor layer, an active layer and a second-type semiconductor layer. The nitride semiconductor layer is formed on the substrate. The patterned oxide total-reflective layer is formed on the nitride semiconductor layer. An upper surface of the nitride semiconductor layer is partially exposed out from the oxide total-reflective layer. The first-type semiconductor layer is arranged on the exposed upper surface of the nitride semiconductor layer and covers the oxide total-reflective layer. The active layer is arranged on the first-type semiconductor layer. The second-type semiconductor layer is arranged on the active layer. | 10-18-2012 |
20120273830 | LIGHT EMITTING DIODE CHIP AND METHOD OF MANUFACTURING THE SAME - An LED chip includes a substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first electrode and a second electrode formed on the substrate in sequence. A surface of the first type semiconductor layer away from the substrate comprises an exposed first area and a second area covered by the light-emitting layer. The first electrode is formed on the exposed first area of the substrate. A number of recesses are defined in the second area of the surface of the first type semiconductor layer. The recesses are spaced apart from each other and arranged in sequence in a direction away from the first electrode; depths of the recesses gradually decrease following an increase of a distance between the recesses and the first electrode. The second electrode is formed on the second type semiconductor layer. | 11-01-2012 |
20130001508 | LIGHT EMITTING DIODE - An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided. | 01-03-2013 |
20130032779 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed. | 02-07-2013 |
20130119421 | LIGHT EMITTING DIODE EPITAXIAL STRUCTURE AND MANUFACTURING METHOD OF THE SAME - An LED epitaxial structure includes a substrate, a buffer layer, a functional layer and a light generating layer. The buffer layer is located on a top surface of the substrate. The functional layer includes a plurality of high-temperature epitaxial layers and low-temperature epitaxial layers alternatively arranged between the buffer layer and light generating layer. A textured structure is formed in the low-temperature epitaxial layer. A SiO2 layer including a plurality of convexes is located on the textured structure to increase light extraction efficiency of the LED epitaxial structure. A manufacturing method of the LED epitaxial structure is also disclosed. | 05-16-2013 |
20130161652 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 μm to 2.5 μm. | 06-27-2013 |
20130234150 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED. | 09-12-2013 |
20140027806 | SEMICONDUCTOR OPTOELECTRONIC STRUCTURE WITH INCREASED LIGHT EXTRACTION EFFICIENCY - A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer. | 01-30-2014 |
20140065745 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - A manufacturing method for an LED (light emitting diode) includes following steps: providing a substrate; disposing a transitional layer on the substrate, the transitional layer comprising a planar area with a flat top surface and a patterned area with a rugged top surface; coating an aluminum layer on the transitional layer; using a nitriding process on the aluminum layer to form an AlN material on the transitional layer; disposing an epitaxial layer on the transitional layer and covering the AlN material, the epitaxial layer contacting the planar area and the patterned area of the transitional layer, a plurality of gaps being defined between the epitaxial layer and the slugs of the second part of the AlN material in the patterned area of the transitional layer. | 03-06-2014 |
20140106485 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODES - An LED manufacturing method includes following steps: providing an LED die; providing an electrode layer having a first section and a second section electrically insulated from the first section, and arranging the LED die on the second section wherein an electrically conductive material electrical connects a bottom of the LED die with second section; forming a transparent conductive layer to electrically connect a top of the LED die with the first section; providing a base and coating an outer surface of the base with a layer of electrically conductive material, defining a continuous gap in the electrically conductive material to divide the electrically conductive material into a first electrode part, and a second electrode part, arranging the electrode layer on the base so that the first section contacts the first electrode part, and the second section contacts the second electrode part. | 04-17-2014 |
20140131656 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode chip includes a sapphire substrate and a plurality of carbon nano-tubes arranged on an upper surface of the sapphire substrate. Gaps are formed between two adjacent carbon nano-tubes to expose parts of the upper surface of the sapphire substrate. An un-doped GaN layer is formed on the exposed parts of the upper surface of the sapphire substrate and covers the carbon nano-tubes. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the un-doped GaN layer in sequence. A method for manufacturing the light emitting diode chip is also provided. | 05-15-2014 |
20140175506 | LED EPITAXIAL STRUCTURE - An LED epitaxial structure includes a substrate, a buffer layer and an epitaxial layer. The buffer layer is grown on a top surface of the substrate, and the epitaxial layer is formed on a surface of the buffer layer. The epitaxial layer has a first n-type epitaxial layer and a second n-type epitaxial layer. The first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer. The first n-type epitaxial layer has a plurality of irregular holes therein. The first n-type epitaxial layer has a doping concentration which varies along a thickness direction of the first n-type epitaxial layer. | 06-26-2014 |
20140242738 | MANUFACTURING METHOD FOR AN LED - A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching the blocking layer to form patterned grooves penetrating the blocking layer to the first N-type epitaxial layer. A second N-type epitaxial layer is then formed on the blocking layer to contact the first N-type epitaxial layer; a light emitting layer, a P-type epitaxial layer and a conductive layer are thereafter disposed on the second N-type epitaxial layer; an N-type electrode is formed to electrically connect with the first N-type epitaxial layer, and a P-type electrode is formed on the conductive layer. The N-type electrode is disposed on the blocking layer and separated from the second | 08-28-2014 |
20140291689 | LIGHT EMITTING DIODE WITH WAVE-SHAPED BRAGG REFLECTIVE LAYER AND METHOD FOR MANUFACTURING SAME - An exemplary light emitting diode includes a substrate and a first undoped GaN layer formed on the substrate. The first undoped GaN layer has ion implanted areas on an upper surface thereof. A plurality of second undoped GaN layers is formed on the first undoped GaN layer. Each of the second undoped GaN layers is island shaped and partly covers at least one corresponding ion implanted area. A Bragg reflective layer is formed on the second undoped GaN layer and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers. An n-type GaN layer, an active layer and a p-type GaN layer are formed on an upper surface of the Bragg reflective layer in that sequence. A method for manufacturing the light emitting diode is also provided. | 10-02-2014 |
20140306176 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING LIGHT EMITTING DIODES - An exemplary light emitting diode includes a substrate and a first undoped gallium nitride (GaN) layer formed on the substrate. The first undoped GaN layer defines a groove in an upper surface thereof. A distributed Bragg reflector is formed in the groove of the first undoped GaN layer. The distributed Bragg reflector includes a plurality of second undoped GaN layers and a plurality of air gaps alternately stacked one on the other. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the distributed Bragg reflector and the first undoped GaN layer. A p-type electrode and an n-type electrode are electrically connected with the p-type GaN layer and the n-type GaN layer, respectively. A method for manufacturing plural such light emitting diodes is also provided. | 10-16-2014 |
20140327036 | LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) chip includes an N-type semiconductor layer, a compensation layer arranged on the N-type semiconductor layer, an active layer arranged on the compensation layer; and a P-type semiconductor layer arranged on the active layer. During growth of the compensation layer, atoms of an element (i.e., Al) of the compensation layer move to fill epitaxial defects in the N-type semiconductor layer, wherein the epitaxial defects are formed due to lattice mismatch when growing the N-type semiconductor. A method for manufacturing the chip is also disclosed. The compensation layer is made of a compound having a composition of Al | 11-06-2014 |
20140329347 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODES - An exemplary method for manufacturing a light emitting diode includes following steps: providing a substrate; growing an undoped GaN layer on the substrate, the undoped GaN layer comprising an upper surface away from the substrate and a lower surface contacting the substrate; etching the upper surface of the undoped GaN layer to form a plurality of cavities; growing an Distributed Bragg Reflector layer on the upper surface of the undoped GaN layer; and forming sequentially an N-type GaN layer, an active layer and a P-type GaN layer on the Distributed Bragg Reflector layer. | 11-06-2014 |
20150041823 | LED DIE AND METHOD OF MANUFACTURING THE SAME - An LED die includes a substrate, a first buffer layer, a second buffer layer, a plurality of nanospheres, a first semiconductor layer, an active layer and a second semiconductor layer. The first buffer layer, the second buffer layer, the first semiconductor layer, the active layer and the second semiconductor layer are formed successively on the substrate. The substrate has a plurality of protrusions formed on a surface thereof. The nanospheres are located on the first buffer layer formed on the protrusions and covered by the second buffer layer. The present disclosure also provides a method of manufacturing an LED die. | 02-12-2015 |
20150048302 | LIGHT EMITTING DIODE HAVING CARBON NANOTUBES THEREIN AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a substrate, an un-doped GaN layer, a plurality of carbon nanotubes, an N-type GaN layer, an active layer formed on the N-type GaN layer, and a P-type GaN layer formed on the active layer. The substrate includes a first surface and a second surface opposite and parallel to the first surface. A plurality of convexes is formed on the first surface of the substrate. The un-doped GaN layer is formed on the first surface of the substrate. The plurality of carbon nanotubes is formed on an upper surface of the un-doped GaN layer. The plurality of carbon nanotubes is spaced from each other to expose a portion of the upper surface of the un-doped GaN layer. The N-type GaN layer is formed on the exposed portion of the upper surface of the un-doped GaN layer and covering the carbon nanotubes therein. | 02-19-2015 |
20150054012 | LED DIE AND METHOD OF MANUFACTURING THE SAME - An LED die includes a substrate, a first buffer layer, a second buffer layer, a plurality of nanospheres, a first semiconductor layer, an active layer and a second semiconductor layer. The first buffer layer, the second buffer layer, the first semiconductor layer, the active layer and the second semiconductor layer are formed successively on the substrate. The substrate has a plurality of protrusions on a surface thereof. The nanospheres are located on the protrusions and covered by the second buffer layer and located in the second buffer layer. The present disclosure also provides a method of manufacturing an LED die. | 02-26-2015 |
20150069323 | SINGLE PHOTON SOURCE DIE AND METHOD OF MANUFACTURING THE SAME - A single photon source die includes a first semiconductor layer, a plurality of columnar structures formed on the first semiconductor layer, a second semiconductor layer formed on the columnar structures. Each columnar structure includes a bottom layer, a single photon point layer and a connecting layer. The single photon point layer includes a plurality of single photon points. | 03-12-2015 |
20150115218 | OPTOELECTRONIC MODULE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic module includes a substrate, an LED and a laser LED formed on the substrate, simultaneously. A method for manufacturing an optoelectronic module includes following steps: providing a sapphire substrate, and forming two adoped GaN layers, an N-type GaN layer, an active layer and a P-type GaN layer on the sapphire substrate in sequence; providing a substrate and forming a metallic adhering layer on the substrate; forming an ohmic contact layer and a reflecting layer on the P-type GaN layer in series; arranging the reflecting layer on the adhering layer; stripping the sapphire substrate and the two doped GaN layers from the N-type GaN layer to form a semiconductor structure; etching a top end of the semiconductor structure to divide the semiconductor structure into a laser LED region and an LED region; forming two N-type electrodes on the LED region and an LED region, respectively. | 04-30-2015 |
Patent application number | Description | Published |
20130054676 | COMPUTER NETWORK BASED HAZARDOUS CONDITION MONITORING SYSTEM AND SERVER - A hazardous condition monitoring system is provided. The hazardous condition monitoring system includes a server module, an interface adapting module, and a hazard processing module communicating with terminal devices. The server module includes a network interface unit and a processing unit. The interface adapting module communicates with the server module through the network interface unit through a computer network. The processing unit derives the output information from a second type signal received from the interface adapting module, and produces the second type signal including input information for the hazard processing module. The interface adaptor transforms a first type signal and the second type signal into the signal of the other type, and transmits the transformed signals to the server module and the hazard processing module, respectively. The disclosure further provides a server for monitoring hazardous conditions. | 02-28-2013 |
20130099919 | EMERGENCY GUIDING SYSTEM AND SERVER - An emergency guiding system includes an emergency guiding server, a portable device, and short distance wireless identifiers. The emergency guiding server includes a guiding scheme determination unit producing a guiding scheme in response to an emergency and a route providing unit producing a recommended route according to the last guiding scheme and a location signal in response to the production of the guiding scheme. The short distance wireless identifiers detect the presence of the portable device through a short distance wireless communication unit of the portable device, thereby transmitting the corresponding location signal to the emergency guiding server. The emergency guiding server transmits a guiding signal to the portable device according to the location signal, wherein the guiding signal includes a portion of a recommended route adjacent to the portable device to reach a particular target. The disclosure further provides an emergency guiding server. | 04-25-2013 |
20130103309 | EMERGENCY GUIDING SYSTEM AND SERVER - An emergency guiding system includes an emergency guiding server and a portable device. The emergency guiding server includes a guiding scheme determination unit producing a guiding scheme in response to an emergency, a route providing unit producing a recommended route to reach a particular target according to the last guiding scheme and a device location information in a location signal in response to the production of the guiding scheme, and a scene location data unit including sets of scene location information. The portable device includes a location identification unit producing the device location information, which transmits the location signal including the device location information to the emergency guiding server. The emergency guiding server transmits a guiding signal including the recommended route to the portable device when the device location information corresponds to one set of the scene location information. The disclosure further provides an emergency guiding server. | 04-25-2013 |
20130115587 | EMERGENCY COMMAND SYSTEM AND METHOD - An emergency command system is provided. The emergency command system selectively operated in a real time monitoring mode, a forecast mode, and a strategy inferring mode includes an input interface unit, a scene information unit, an emergency status providing unit, a strategy inferring unit, an output interface unit, and a commanding unit. The emergency status providing unit receives an alarm signal corresponding to an emergency, and produces scene simulation data according to the alarm signal and a set of scene information in the scene information unit corresponding to the emergency. The strategy inferring unit produces a strategy inference diagram according to the scene simulation data and/or strategy data input through the input interface unit, thereby displaying through the output interface unit. The commanding unit transmits command signals produced according to the strategy data to terminal devices. The disclosure further provides an emergency command method. | 05-09-2013 |
20130116922 | EMERGENCY GUIDING SYSTEM, SERVER AND PORTABLE DEVICE USING AUGMENTED REALITY - An emergency guiding system is provided. The emergency guiding system includes an emergency guiding server and a portable device. The emergency guiding server includes a guiding scheme determination unit producing a guiding scheme and an augmented reality information unit. The portable device transmits an image characteristic signal including image data produced according to an image to the emergency guiding server. The emergency guiding server transmits an augmented reality signal to the portable device, wherein the augmented reality signal includes an augmented reality data produced by the augmented reality information unit according to the guiding scheme, the image data, and a portable device location information in a location signal corresponding to the portable device. The portable device produces an augmented reality image according to the image and the augmented reality data. The disclosure further provides an emergency guiding server and an emergency guiding portable device. | 05-09-2013 |
20130154824 | ENVIRONMENTAL HAZARD WARNING SYSTEM AND METHOD - An environmental hazard warning system is provided. The environmental hazard warning system includes a data unit, a comparison unit, and an alarm unit. The data unit is capable of storing a plurality protective suit tolerance data. The comparison unit receives a portable sensor parameter signal including a portable sensor parameter from a portable sensor, and compares the portable sensor parameter with the protective suit tolerance data corresponding to the portable sensor parameter. The alarm unit transmits an alarm signal corresponding to the comparison between the portable sensor parameter and the protective suit tolerance data. The disclosure further provides an environmental hazard warning method. | 06-20-2013 |
20130154832 | EMERGENCY RESPONSE SYSTEM AND METHOD - An emergency response system is provided. The emergency response system includes an administrator information database capable of storing an administrator information, an emergency device information database capable of storing an emergency device information, a control unit, and a communication unit. The control unit searches the administrator information database to find the administrator information corresponding to a report signal, thereby generating a notification signal according to the administrator information, and searches the emergency device information database to find the emergency device information corresponding to the report signal, thereby generating a reply signal including a nearby emergency device information according to the emergency device information. In response to receiving the report signal from the user terminal, the communication unit transmits the notification signal to an administrator terminal, and transmits the reply signal to the user terminal. The disclosure further provides an emergency response method. | 06-20-2013 |
20130179818 | COMMUNICATION DEVICE, METHOD, AND INTERFACE FOR EMERGENCY RESPONDER - A communication device is provided. The communication device includes software modules include instructions: to display a floor plan diagram corresponding to a scene on a screen display; to display a personnel symbol on the floor plan diagram according to the location of the communication device; to display an equipment symbol on the floor plan diagram according to an equipment location information received from a command assignment system; to display a report interface and an intercommunication interface on the screen display; to transmit a report message for interacting with a command assignment interface of the command assignment system in response to detecting a submission operation with respect to the report interface; and to transmit a message for interacting with a communication interface of a neighboring communication device in response to detecting a submission operation with respect to the intercommunication interface. | 07-11-2013 |
20130179826 | DEVICE, METHOD, AND USER INTERFACE FOR COMMAND ASSIGNMENT - A command assignment device is provided. The command assignment device includes software modules which include instructions: to display a floor plan diagram corresponding to a scene on a screen display; to display a symbol on the floor plan diagram according to a responder device location information received from a responder device located at the scene; to generate a destination correlation information in response to detecting a correlation operation between the responder symbol and a destination on the floor plan diagram; to generate an action information in response to various actions taken; and to transmit a command signal comprising any commands given for display on the responder device(s). The disclosure further provides a command assignment method and a command assignment interface. | 07-11-2013 |
20130247093 | EARLY WARNING SYSTEM, SERVER AND METHOD - An early warning system is provided. The early warning system includes a plurality of sensors, a server, and an information appliance device. The sensors produce status information. The server produces event information according to the status information of the sensors, transforms the event information into a first multimedia signal, and transmits the first multimedia signal to the information appliance device through a computer network. The information appliance device is connected to a display device, wherein the information appliance device transforms the first multimedia signal into a second multimedia signal capable of displaying through the display device. The disclosure further provides an early warning server, an early warning method, and a computer program product for report information. | 09-19-2013 |
20130257755 | DISPLAY DEVICE FOR A STRUCTURE - A display device for a structure is provided. The display device includes a display unit, an input unit, and a control unit. The display unit for displaying scenes is disposed in an opening or a surface of the structure, for example, a window, a door, or a wall. The control unit determines a circumstance according to input parameters received by the input unit, and changes the scenes to correspond to the circumstance. The control unit can change the scenes by modifying a color value of pixel data corresponding to pixels of each of the scenes according to values of the input parameters, or by selecting another scene according to the values of the input parameters. | 10-03-2013 |
20130257901 | USING AN ELECTRIC DISPLAY FOR DECORATION - An electronic display such as electronic paper can decorate a structure by using a display system. The display system includes a content minding unit and a conversion unit. The content minding unit produces content information according to reference parameters generated by sensing devices. The conversion unit converts the content information into theme information. The display system transmits the theme information to the electronic display disposed in the structure, such that the electronic display can display scenes according to the theme information. | 10-03-2013 |
20130305807 | GAS DETECTOR TEST SYSTEM AND APPARATUS - A gas detector test system is provided. The gas detector test system includes a test apparatus and a control apparatus. The test apparatus includes a housing, a baffle, an elastic device, a gas discharger, and a gas sensor. The housing defines an inner space communicating with an opening. The elastic device pushes the baffle disposed in the inner space toward the opening, thereby sealing the opening. The baffle can be moved against the opening to form an interval between the baffle and the opening. The gas sensor produces a gas parameter signal according to a gas detected in the inner space. The control apparatus controls the gas discharger of the test apparatus to discharge gas according to a control signal, and displays the information of the gas according to the gas parameter signal. The disclosure further provides a gas detector test apparatus. | 11-21-2013 |
20130314554 | ELECTRONIC DECORATION SYSTEM, METHOD, AND SERVER - An electronic decoration system is provided, including a third-party server cloud and display devices with a display disposed in a structure. The third-party server cloud includes an input unit, a conversion unit, a subscription unit, and an output unit. The conversion unit produces theme data according to input data received by the input unit. The subscription unit stores subscription information including a theme category name and subscriber identifications. When a category of the theme data corresponds to the theme category name and an identification of the display device corresponds to one of the subscriber identifications, the subscription unit enables the output unit to transmit the theme data to the display device, thereby enabling the display to display scenes according to the theme data. The disclosure further provides a server for the electronic decoration system and an electronic decoration method. | 11-28-2013 |
20130316767 | ELECTRONIC DISPLAY STRUCTURE - An electronic display structure is provided. The electronic display structure includes a display structure, a camera unit, and a control unit. The display structure including a window portion can be a display case or a display window, which defines an inner space to accommodate objects. The objects in the inner space can be viewed from the exterior of the display structure through the window portion. The camera unit produces images in a direction toward the exterior of the display structure. The control unit determines an indicating direction of a user through the images, determines the object(s) indicated by the user according to the indicating direction, and transmits object data of the indicated object(s) to a transparent display or a portable device. | 11-28-2013 |
20130342427 | MONITORING THROUGH A TRANSPARENT DISPLAY - Traffic obstacles or other objectives in front of a vehicle or a person can be monitored by using a monitoring system including a display device, a camera unit, and a control unit. The display device includes a transparent display which allows a user to view a scene through the transparent display. The camera unit produces images of the scene. The control unit determines objective(s) according to recognition of the scene images, and transmits objective data corresponding to the objective(s) to the display device. The transparent display of the display device displays objective information indicating virtual image(s) of the objective(s) projected on the transparent display according to the objective data. | 12-26-2013 |
20130342696 | MONITORING THROUGH A TRANSPARENT DISPLAY OF A PORTABLE DEVICE - Traffic obstacles or other objectives in front of a person is monitored by using a monitoring system including a portable device, a camera unit, and a control unit. The portable device can be a helmet or glasses, which includes a display unit with a transparent display allowing a user to view a scene through the transparent display. The camera unit produces scene images of the scene. The control unit determines objective(s) according to the scene images, and transmits objective data corresponding to the objective(s) to the display unit. The transparent display of the display unit displays objective information indicating virtual image(s) of the objective(s) seen through the transparent display according to the objective data. | 12-26-2013 |
20140035877 | USING A DISPLAY DEVICE WITH A TRANSPARENT DISPLAY TO CAPTURE INFORMATION CONCERNING OBJECTIVES IN A SCREEN OF ANOTHER DISPLAY DEVICE - Information in a screen of another display device such as a television or a computer monitor can be captured by a display device including a transparent display, a camera unit, an input unit, and a control unit. The transparent display allows a user to view the screen through the transparent display. The camera unit produces screen images corresponding to the screen. The input unit produces selection parameters in response to a selection operation corresponding to a virtual image of the screen seen through the transparent display. The control unit determines objective(s) in the screen according to the screen images and the selection parameters. The control unit may transmit the objective data corresponding to the objective(s) to the transparent display, thereby enabling the transparent display to display objective-related information corresponding to the objective according to objective data. | 02-06-2014 |
20140055322 | DISPLAY SYSTEM AND HEAD-MOUNTED DISPLAY APPARATUS - A display system is provided. The display system includes a display device displaying images and a head-mounted display apparatus. The display device includes an invisible light emitting unit producing invisible lights corresponding to the images. The head-mounted display apparatus includes a visible light filtering unit and a light wavelength transforming unit. The visible light filtering unit receives lights corresponding to the display device and removes visible lights from the receiving lights, wherein the visible lights are ambient lights between the display device and the head-mounted display apparatus. The light wavelength transforming unit receives the receiving lights from the visible light filtering unit and transforms the wavelength of the receiving lights such that the receiving lights become visible lights. The disclosure further provides a head-mounted display apparatus for the display system. | 02-27-2014 |