Patent application number | Description | Published |
20090269493 | METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON ROD - The present invention utilizes a silicon member (single-crystalline silicon rod), which is cut out from a single-crystalline silicon ingot which is grown by a CZ method or FZ method, as the core wire when manufacturing a silicon rod. Specifically, a planar silicon is cut out from a body portion which is obtained by cutting off a shoulder portion and a tail portion from a single-crystalline silicon ingot and is further cut into thin rectangles to obtain a silicon bar. In the case that the crystal growth axis orientation is <100>, there are four crystal habit lines, and the silicon bar is cut out such that the surface forms an off-angle θ in a predetermined range with the crystal habit line. The provided polycrystalline silicon rod has a low impurity contamination and high single-crystallization efficiency. | 10-29-2009 |
20120201976 | CORE WIRE HOLDER FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON - One end side of a core wire holder | 08-09-2012 |
20120237429 | REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON - An inner wall | 09-20-2012 |
20130089489 | METHOD FOR CLEANING BELL JAR, METHOD FOR PRODUCING POLYCRYSTALLINE SILICON, AND APPARATUS FOR DRYING BELL JAR - A bell jar includes a metallic bell jar ( | 04-11-2013 |
20130102092 | POLYCRYSTALLINE SILICON ROD AND METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON ROD - The length of the polycrystalline silicon rod ( | 04-25-2013 |
20130302528 | APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON - Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor. | 11-14-2013 |
20140030440 | SILICON CORE WIRE HOLDER AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD - A core wire holder | 01-30-2014 |
20140033966 | METHOD FOR SELECTING POLYCRYSTALLINE SILICON ROD, AND METHOD FOR PRODUCING SINGLE-CRYSTALLINE SILICON - Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (μ±2σ) found for any one of the Miller indices <111>, <220>, <311> and <400>, the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon. | 02-06-2014 |
20140134832 | POLYCRYSTALLINE SILICON MANUFACTURING APPARATUS AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD - In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle | 05-15-2014 |
20140302239 | PRODUCTION METHOD FOR POLYCRYSTALLINE SILICON, AND REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION - The present invention provides a method of producing polycrystalline silicon in which silicon is precipitated on a silicon core wire to obtain a polycrystalline silicon rod. In an initial stage (former step) of a precipitation reaction, a reaction rate is not increased by supplying a large amount of source gas to a reactor but the reaction rate is increased by increasing a concentration of the source gas to be supplied, and in a latter step after the former step, the probability of occurrence of popcorn is reduced using an effect of high-speed forced convection caused by blowing the source gas into the reactor at high speed. Thus, a high-purity polycrystalline silicon rod with little popcorn can be produced without reducing production efficiency even in a reaction system with high pressure, high load, and high speed. | 10-09-2014 |
20150017349 | POLYCRYSTALLINE SILICON ROD MANUFACTURING METHOD - Switches (S | 01-15-2015 |
20150037516 | POLYCRYSTALLINE SILICON ROD MANUFACTURING METHOD - Switches (S | 02-05-2015 |
20150047554 | METHOD FOR EVALUATING DEGREE OF CRYSTAL ORIENTATION IN POLYCRYSTALLINE SILICON, SELECTION METHOD FOR POLYCRYSTALLINE SILICON RODS, AND PRODUCTION METHOD FOR SINGLE-CRYSTAL SILICON - When a plate-like sample | 02-19-2015 |