Patent application number | Description | Published |
20080280452 | Method for stripping photoresist - Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O | 11-13-2008 |
20090291565 | Method for stripping photoresist - Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O | 11-26-2009 |
20100022426 | Photoresist stripping solution - Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylene glycol, diethylene glycol monobutyl ether), and (c) a non-amine water-soluble organic solvent (e.g., dimethyl sulfoxide, N-methyl-2-pyrrolidone). The photoresist stripping solution of the invention has an excellent photoresist strippability, not causing damage of swelling/coloration to acrylic transparent films used in production of liquid-crystal panels and not causing damage to electrode materials. In particular, it has an excellent photoresist strippability to remove even a thick-film negative photoresist (photosensitive dry film) used in production of semiconductor chip packages (especially, wafer-level chip size packages, W-CSP), not causing damage to copper. | 01-28-2010 |
20100086879 | MATERIAL FOR FORMATION OF PROTECTIVE FILM, METHOD FOR FORMATION OF PHOTORESIST PATTERN, AND SOLUTION FOR WASHING/REMOVAL OF PROTECTIVE FILM - Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method. | 04-08-2010 |
20110000874 | METHOD FOR STRIPPING PHOTORESIST - Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O | 01-06-2011 |
Patent application number | Description | Published |
20080241758 | Photoresist stripping solution and a method of stripping photoresists using the same - A photoresist stripping solution comprising (a) a carboxyl group-containing acidic compound, (b) at least one basic compound (for example, monoethanolamine, tetraalkylammonium) selected from among alkanolamines and specific quaternary ammonium hydroxides, (c) a sulfur-containing corrosion inhibitor and (d) water, and having a pH value of 3.5-5.5; and a method of stripping photoresists using the same are disclosed. The present invention provides a photoresist stripping solution which is excellent in the effect of protecting metal wirings (in particular, Cu wirings) from corrosion, never damages interlevel films, such as low dielectric layers or organic SOG layers, and shows excellent strippability of photoresist films and post-ashing residues. | 10-02-2008 |
20090156005 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith - It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice layer in the first etched-space; partially etching the low dielectric layer and the sacrifice layer to form a second etched-space connected to the first etched-space; and removing the sacrifice layer remaining in the first etched-space with the cleaning liquid, wherein the cleaning liquid comprises (a) 1-25 mass % of a quaternary ammonium hydroxide, such as TMAH and choline, (b) 30-70 mass % of a water soluble organic solvent, and (c) 20-60 mass % of water. The cleaning liquid attains in a well balanced manner such effects that a sacrifice layer used for forming a dual damascene structure is excellently removed, and a low dielectric layer is not damaged upon formation of a metallic wiring on a substrate having a metallic layer (such as a Cu layer) and the low dielectric layer formed thereon. | 06-18-2009 |
20100051582 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith - It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice layer in the first etched-space; partially etching the low dielectric layer and the sacrifice layer to form a second etched-space connected to the first etched-space; and removing the sacrifice layer remaining in the first etched-space with the cleaning liquid, wherein the cleaning liquid comprises (a) 1-25 mass % of a quaternary ammonium hydroxide, such as TMAH and choline, (b) 30-70 mass % of a water soluble organic solvent, and (c) 20-60 mass % of water. The cleaning liquid attains in a well balanced manner such effects that a sacrifice layer used for forming a dual damascene structure is excellently removed, and a low dielectric layer is not damaged upon formation of a metallic wiring on a substrate having a metallic layer (such as a Cu layer) and the low dielectric layer formed thereon. | 03-04-2010 |
20100112495 | Photoresist stripping solution and a method of stripping photoresists using the same - A photoresist stripping solution comprising (a) a carboxyl group-containing acidic compound, (b) at least one basic compound (for example, monoethanolamine, tetraalkylammonium) selected from among alkanolamines and specific quaternary ammonium hydroxides, (c) a sulfur-containing corrosion inhibitor and (d) water, and having a pH value of 3.5-5.5; and a method of stripping photoresists using the same are disclosed. The present invention provides a photoresist stripping solution which is excellent in the effect of protecting metal wirings (in particular, Cu wirings) from corrosion, never damages interlevel films, such as low dielectric layers or organic SOG layers, and shows excellent strippability of photoresist films and post-ashing residues. | 05-06-2010 |
20100190112 | Photoresist stripping solution and a method of stripping photoresists using the same - A photoresist stripping solution comprising (a) a specified quaternary ammonium hydroxide, such as tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, methyltributylammonium hydroxide or methyltripropylammonium hydroxide, (b) a water-soluble amine, (c) water, (d) a corrosion inhibitor and (e) a water-soluble organic solvent, the compounding ratio of component (a) to component (b) being in the range of from 1:3 to 1:10 by mass, as well as a method of stripping photoresists using the solution. The stripping solution of the invention assures effective protection of Al, Cu and other wiring metal conductors against corroding as well as efficient stripping of the photoresist film, post-ashing residues such as modified photoresist film and metal depositions. It also assures efficient stripping of Si-based residues and effective protection of the substrate (particularly the reverse side of a Si substrate) from corroding. | 07-29-2010 |
20100248477 | Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith - It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice layer in the first etched-space; partially etching the low dielectric layer and the sacrifice layer to form a second etched-space connected to the first etched-space; and removing the sacrifice layer remaining in the first etched-space with the cleaning liquid, wherein the cleaning liquid comprises (a) 1-25 mass % of a quaternary ammonium hydroxide, such as TMAH and choline (b) 30-70 mass % of a water soluble organic solvent, and (c) 20-60 mass % of water. The cleaning liquid attains in a well balanced manner such effects that a sacrifice layer used for forming a dual damascene structure is excellently removed, and a low dielectric layer is not damaged upon formation of a metallic wiring on a substrate having a metallic layer (such as a Cu layer) and the low dielectric layer formed thereon. | 09-30-2010 |
20100304312 | CLEANING LIQUID USED IN PHOTOLITHOGRAPHY AND A METHOD FOR TREATING SUBSTRATE THEREWITH - It is disclosed a cleaning liquid for stripping and dissolving a photoresist pattern having a film thickness of 10-150 μm, which contains (a) 0.5-15 mass % of a quaternary ammonium hydroxide, such as tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, (b) 65-97 mass % of a water-soluble organic solvent, such as dimethylsulfoxide or a mixed solvent thereof with N-methyl-2-pyrrolidone, sulforane, etc., and (c) 0.5-30 mass % of water, and a method for treating a substrate therewith. | 12-02-2010 |
Patent application number | Description | Published |
20080242575 | Treating liquid for photoresist removal, and method for treating substrate - Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist. | 10-02-2008 |
20090176677 | Treating liquid for photoresist removal, and method for treating substrate - Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist. | 07-09-2009 |
20090191478 | METHOD OF FORMING RESIST PATTERN AND NEGATIVE RESIST COMPOSITION - A novel method of forming a resist pattern in which thickness loss from the resist pattern is reduced, and a negative resist composition that can be used in this method of forming a resist pattern. The method of forming a resist pattern includes: forming a first resist film by applying a first resist composition to a support, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then developing the first resist film, forming a second resist film by applying a negative resist composition containing an ether-based organic solvent (S″) having no hydroxyl groups onto the support having the first resist pattern formed thereon, and forming a resist pattern by selectively exposing the second resist film through a second mask pattern and then developing the second resist film. | 07-30-2009 |
20100056411 | Treating liquid for photoresist removal and method for treating substrate - Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist. | 03-04-2010 |
20110195573 | CLEANING LIQUID FOR LITHOGRAPHY AND METHOD FOR FORMING WIRING - Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to ILD materials, and excellent removal performance in relation to a resist film and a bottom antireflective coating film, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water soluble organic solvent, water, and an inorganic base. The water soluble organic solvent contains a highly polar solvent having a dipole moment of no less than 3.0 D, a glycol ether solvent and a polyhydric alcohol, and the total content of the highly polar solvent and the glycol ether solvent is no less than 30% by mass relative to the total mass of the liquid for lithography. | 08-11-2011 |
20150013917 | PROCESSING METHOD AND PROCESSING APPARATUS - A bonding method including an adhesive layer forming process in which a thermoplastic adhesive is applied to a substrate or a support plate and an adhesive layer is formed; a heating process in which the adhesive layer that is formed on the substrate or the support plate is heated; and a bonding process in which the substrate and the support plate are pressed against each other via the heated adhesive layer, thereby bonding the substrate and the support plate. | 01-15-2015 |