Shengqiang
Shengqiang Liu, Shenzhen CN
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20140115142 | Port Setting Method, Routing Device, and Computer Program Product - An embodiment of the present invention provides a port setting method, which includes initiating a first detection message and a second detection message at the same time through a port, where the first detection message is used for detecting a first network server, and the second detection message is used for detecting a second network server, if at least one of a first response message to the first detection message and a second response message to the second detection message is received within a predetermined time, setting the working mode of the port to a wide area network WAN mode, otherwise, setting the working mode of the port to a local area network LAN mode. | 04-24-2014 |
Shengqiang Yu, Shanghai CN
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20140146192 | ACOUSTIC CONFIGURATION OF A WIRELESS CAMERA - An example wireless camera system includes a camera, a wireless network adapter, an acoustic receiver, and a processor. The camera is configured to acquire image data and the wireless network adapter wirelessly communicates the image data over a wireless network. The acoustic receiver is configured to receive an acoustic signal containing configuration data and the processor configures the network adapter to communicate over the wireless network using the received configuration data of the acoustic signal. | 05-29-2014 |
Shengqiang Zhou, Dresden DE
Patent application number | Description | Published |
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20140312400 | INTEGRATED NON-VOLATILE MEMORY ELEMENTS, DESIGN AND USE - Various embodiments describe an integrated non-volatile component. The component may include a surface contact with associated mating contact wherein a ferroelectric layer is used as a conductive channel having variable conductivity and the surface contact and/or the associated mating contact are/is embodied as a rectifying contact and, as a result of an applied voltage between the surface contact and the associated mating contact, a non-volatile space charge zone forms in the surface contact terminal region and/or mating contact terminal region in the ferroelectric layer. | 10-23-2014 |