Patent application number | Description | Published |
20090221904 | INFLAMMATORY CONDITION PROGRESSION, DIAGNOSIS AND TREATMENT MONITORING METHODS, SYSTEMS, APPARATUS, AND USES - The present invention relates to at least one method, apparatus and/or system for providing at least one lymph node volume for use in the monitoring of progression, diagnosis or treatment of an inflammatory condition, as well as to a computer program product comprising software code portions for implementing the method in accordance with the invention. | 09-03-2009 |
20090239258 | Anti-IL-6 Antibody Nucleic Acid Molecules and Methods - Anti-IL-6 antibody nucleic acids, vectors, host cells, transgenic animals or plants, and methods of making and using thereof have applications in diagnostic and/or therapeutic compositions, methods and devices. | 09-24-2009 |
20110081355 | Methods of Diagnosing and Treating Conditions Using Anti-IL-6 Antibodies - Anti-IL-6 antibodies are used to treat IL-6 related conditions, such as rheumatoid arthritis, osteoarthritis, osteolysis, aseptic loosening of orthopedic implants, systemic lupus erythematosus, cutaneous lupus erythematosus, lupus nephritis, type 2 diabetes mellitus, chronic obstructive pulmonary disease, and renal cell carcinoma. | 04-07-2011 |
20110195063 | Methods of Treating Ankylosing Spondylitis Using Anti-TNF Antibodies and Peptides of Human Tumor Necrosis Factor - Anti-TNF antibodies, fragments and regions thereof which are specific for human tumor necrosis factor-α (TNFα) and are useful in vivo diagnosis and therapy of a number of TNFα-mediated pathologies and conditions, including ankylosing spondylitis, as well as polynucleotides coding for murine and chimeric antibodies, methods of producing the antibody, methods of use of the anti-TNF antibody, or fragment, region or derivative thereof, in immunoassays and immunotherapeutic approaches are provided. | 08-11-2011 |
20120045453 | Anti-IL-6 Antibodies, Compositions, Methods and Uses - An anti-IL-6 antibody, including isolated nucleic acids that encode at least one anti-IL-6 antibody, vectors, host cells, transgenic animals or plants, and methods of making and using thereof have applications in diagnostic and/or therapeutic compositions, methods and devices. | 02-23-2012 |
20130017208 | Anti-IL-6 Antibodies, Compositions, Methods and Uses - An anti-IL-6 antibody, including isolated nucleic acids that encode at least one anti-IL-6 antibody, vectors, host cells, transgenic animals or plants, and methods of making and using thereof have applications in diagnostic and/or therapeutic compositions, methods and devices. | 01-17-2013 |
Patent application number | Description | Published |
20080226534 | Adsorbent Articles for Disk Drives - An improved activated carbon adsorbent for disk drives that has improved or increased adsorption capacity for moisture between 25% RH and 45% RH while optionally maintaining good capacity for organic vapors, acid gasses and moisture at 95% RH. | 09-18-2008 |
20100095843 | Air Pollution Control Filter Elements for Filtration Systems - An improved filtration apparatus, filtering method and filtering material for capturing mercury and other pollutants in pollutant-laden fluid streams such as flue gases generated by process gas streams are disclosed. The improved filtration system may include two pollutant remediation layers, an upstream layer capable of filtering particulates and a downstream layer capable of adsorbing and/or catalyzing pollutants such as mercury, dioxin, furans, and NO | 04-22-2010 |
20120006196 | Capture of mercury from a gaseous mixture containing mercury - Compositions are provided, derived from chemical treatment of carbonaceous fiber felt forms or other carbonaceous substrates, that exhibit both high efficiency and capacity for mercury capture from flue gases and the like. These compositions are superior to known compositions, particularly with regard to their performance under severely deactivating conditions. The compositions result from the pyrolysis of certain specific sulfur bearing compounds while in contact with activated carbon powders, activated carbon fibers, or with other carbonized forms. Precursor compounds to these novel mercury-binding compositions contain structural moieties that may be represented as: | 01-12-2012 |
Patent application number | Description | Published |
20120153301 | III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE PASSIVATION - A semiconductor structure includes a semiconductor layer that is passivated with an aluminum-silicon nitride layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material. | 06-21-2012 |
20120156836 | METHOD FOR FORMING III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE PASSIVATION - A method for fabricating a semiconductor structure includes forming a semiconductor layer over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material. | 06-21-2012 |
20120156895 | CHEMICAL VAPOR DEPOSITION PROCESS FOR ALUMINUM SILICON NITRIDE - A chemical vapor deposition method for forming an aluminum-silicon nitride layer upon a substrate uses an aluminum precursor, a silicon precursor and a nitrogen precursor under chemical vapor deposition conditions to deposit the aluminum-silicon nitride layer upon the substrate. The aluminum-silicon nitride layer has an index of refraction interposed between silicon nitride and aluminum nitride. The aluminum-silicon nitride layer also has a bandgap from about 4.5 to about 6 eV and a permittivity from about 6×10̂-11 to about 8×10̂-11 F/m. The aluminum-silicon nitride layer may be further thermally annealed to reduce a hydrogen content of the aluminum-silicon nitride layer. | 06-21-2012 |
20130153963 | GATED III-V SEMICONDUCTOR STRUCTURE AND METHOD - A gated III-V semiconductor structure and a method for fabricating the gated III-V semiconductor structure includes a threshold modifying dopant region within a III-V semiconductor barrier layer at the base of an aperture through a passivation layer that otherwise passivates the III-V semiconductor barrier layer. The passivation layer, which may comprise an aluminum-silicon nitride material, has particular bandgap and permittivity properties that provide for enhanced performance of a III-V semiconductor device that derives from the III-V semiconductor structure absent a field plate. The threshold modifying dopant region provides the possibility for forming both an enhancement mode gated III-V semiconductor structure and a depletion mode III-V semiconductor structure on the same substrate. The threshold modifying dopant region when comprising a magnesium (Mg) threshold modifying dopant may be incorporated into the gates III-V semiconductor structure using a dicyclopentadienyl magnesium (Cp2Mg) vapor diffusion method or a magnesium-silicon nitride (MgSiN) solid state diffusion method. | 06-20-2013 |
Patent application number | Description | Published |
20150357987 | INTEGRATED CIRCUIT CONFIGURED WITH TWO OR MORE SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES - A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 10 | 12-10-2015 |
20150357993 | INTEGRATED CIRCUIT CONFIGURED WITH TWO OR MORE SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES - A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 10 | 12-10-2015 |
20150357994 | RESONANCE CIRCUIT WITH A SINGLE CRYSTAL CAPACITOR DIELECTRIC MATERIAL - A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 10 | 12-10-2015 |
20160028367 | SINGLE CRYSTAL ACOUSTIC RESONATOR AND BULK ACOUSTIC WAVE FILTER - A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices provided on a silicon and carbide bearing material, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures. | 01-28-2016 |
20160028368 | WAFER SCALE PACKAGING - A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures. | 01-28-2016 |
20160036580 | MOBILE COMMUNICATION DEVICE CONFIGURED WITH A SINGLE CRYSTAL PIEZO RESONATOR STRUCTURE - A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device. | 02-04-2016 |
Patent application number | Description | Published |
20120258842 | HEALTH AID AND METHOD FOR TREATING PAIN - A health aid and method for treating neck, shoulder and back pain including a first elongated member, a second elongated member, and an attachment connecting the first and second elongated members and configured for the first and second elongated members to move between an open position, wherein a bottom end of each of the first and second elongated members are separated by a first distance, and an engaged position, wherein the bottom ends are separated by a second distance that is less than the first distance. | 10-11-2012 |
20150151159 | HEALTH AID KIT AND METHOD FOR TREATING PAIN - A health aid, a health aid kit, and a method for treating neck, shoulder and back pain including a first elongated member, a second elongated member, and an attachment connecting the first and second elongated members and configured for the first and second elongated members to move between an open position, wherein a bottom end of each of the first and second elongated members are separated by a first distance, and an engaged position, wherein the bottom ends are separated by a second distance that is less than the first distance. Wherein the health aid kit includes instructions for carrying out the methods for treating neck, shoulder and back pain. | 06-04-2015 |