Shchekin
Alexey Shchekin, Moscow RU
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20160131472 | OPTICAL MEASUREMENT SYSTEM AND METHOD FOR MEASURING CRITICAL DIMENSION OF NANOSTRUCTURE - Provided is an optical measurement system. The optical measurement system includes: an optical module which includes an optical system and which is configured to illuminate a sample and register a defocused image of a nanostructured surface of the sample, an optical system parameter control module configured to set optical parameters of the optical system, an optical transfer function (OTF) measurement module configured to measure an OTF, a defocused image calculation module configured to calculate the defocused image based on the measured OTF and the optical parameters, and a critical dimension (CD) evaluation module configured to compare the registered defocused image with the calculated defocused image of the nanostructured surface of the sample and to output a CD value of the nanostructured surface. | 05-12-2016 |
Oleg Shchekin, San Francisco, CA US
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20150349217 | PROCESS FOR PREPARING A SEMICONDUCTOR STRUCTURE FOR MOUNTING - A process for preparing a semiconductor structure for mounting to a carrier is disclosed. The process involves causing a support material to substantially fill a void defined by surfaces formed in the semiconductor structure and causing the support material to solidify sufficiently to support the semiconductor structure when mounted to the carrier. | 12-03-2015 |
Oleg Shchekin, San Jose, CA US
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20160079498 | Light emitting device on a mount with a reflective layer - Embodiments of the invention include a semiconductor light emitting diode (LED) attached to a top surface of a mount. A multi-layer reflector is disposed on the top surface of the mount adjacent to the LED. The multi-layer reflector includes layer pairs of alternating layers of low index of refraction material and high index of refraction material. A portion of the top surface in direct contact with the multi-layer reflector is non-reflective. | 03-17-2016 |
Oleg Borisovich Shchekin, San Francisco, CA US
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20080308824 | Thin Flash or Video Recording Light Using Low Profile Side Emitting LED - Very thin flash modules for cameras are described that do not appear as a point source of light to the illuminated subject. Therefore, the flash is less objectionable to the subject. In one embodiment, the light emitting surface area is about 5 mm×10 mm. Low profile, side-emitting LEDs optically coupled to solid light guides enable the flash module to be thinner than 2 mm. The flash module may also be continuously energized for video recording. The module is particularly useful for cell phone cameras and other thin cameras. | 12-18-2008 |
20080315228 | LOW PROFILE SIDE EMITTING LED WITH WINDOW LAYER AND PHOSPHOR LAYER - Low profile, side-emitting LEDs are described that generate white light, where all light is emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED emits blue light and is a flip chip with the n and p electrodes on the same side of the LED. Separately from the LED, a transparent wafer has deposited on it a red and green phosphor layer. The phosphor color temperature emission is tested, and the color temperatures vs. positions along the wafer are mapped. A reflector is formed over the transparent wafer. The transparent wafer is singulated, and the phosphor/window dice are matched with the blue LEDs to achieve a target white light color temperature. The phosphor/window is then affixed to the LED. | 12-25-2008 |
20130187184 | WAVELENGTH CONVERTED LIGHT EMITTING DEVICE - Embodiments of the invention include a semiconductor light emitting device ( | 07-25-2013 |
20140008684 | ILLUMINATION SYSTEM WITH LIGHT SOURCE, RADIATION CONVERTING ELEMENT AND FILTER - The invention relates to an illumination system comprising 1) a light source arranged to emit primary radiation, 2) a radiation converting element arranged to convert at least part of the primary radiation into secondary radiation, and 3) a filter arranged to block radiation generated in the illumination system having a wavelength shorter than a certain cut-off wavelength. According to the invention, the filter is designed to block a part of the secondary radiation by having arranged the cut-off wavelength of the filter in the emission spectrum of the radiation converting element. Illumination devices according to this design show emission spectra with small bandwidth. | 01-09-2014 |
20140179029 | METHOD OF PROCESSING A SEMICONDUCTOR STRUCTURE - A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices. | 06-26-2014 |
20150129916 | LIGHT EMITTING DEVICE WITH REMOTE NANOSTRUCTURED PHOSPHOR - Embodiments of the invention include a light emitting device (LED | 05-14-2015 |
Oleg Borisovich Shchekin, Eindhoven NL
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20150371975 | LED MODULE WITH HERMETIC SEAL OF WAVELENGTH CONVERSION MATERIAL - An LED module includes a substrate having a high thermal conductivity and at least one LED die mounted on the substrate. A wavelength conversion material, such as phosphor or quantum dots in a binder, has a very low thermal conductivity and is formed to have a relatively high volume and low concentration over the LED die so that the phosphor or quantum dots conduct little heat from the LED die. A transparent top plate, having a high thermal conductivity, is positioned over the wavelength conversion material, and a hermetic seal is formed between the top plate and the substrate surrounding the wavelength conversion material. The LED die is located in a cavity in either the substrate or the top plate. In this way, the temperature of the wavelength conversion material is kept well below the temperature of the LED die. The sealing is done in a wafer level process. | 12-24-2015 |