Patent application number | Description | Published |
20100248479 | CMP METHOD - The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion. | 09-30-2010 |
20110316094 | SEMICONDUCTOR DEVICES WITH ASYMMETRIC HALO IMPLANTATION AND METHOD OF MANUFACTURE - a method comprises forming a hardmask over one or more gate structures. The method further comprises forming a photoresist over the hardmask. The method further comprises forming an opening in the photoresist over at least one of the gate structures. The method further comprises stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further comprises removing the photoresist. The method further comprises providing a halo implant on a side of the least one of the at least one of the gate structures. | 12-29-2011 |
20130078811 | SLURRY FOR CHEMICAL-MECHANICAL POLISHING OF METALS AND USE THEREOF - A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad. | 03-28-2013 |
20130133919 | TOP CORNER ROUNDING OF DAMASCENE WIRE FOR INSULATOR CRACK SUPPRESSION - A structure and method for fabricating the structure that provides a metal wire having a first height at an upper surface. An insulating material surrounding said metal wire is etched to a second height below said first height of said upper surface. The metal wire from said upper surface, after etching said insulating material, is planarized to remove sufficient material from a lateral edge portion of said metal wire such that a height of said lateral edge portion is equivalent to said second height of said insulating material surrounding said metal wire. | 05-30-2013 |
20130147067 | LOCALLY TAILORING CHEMICAL MECHANICAL POLISHING (CMP) POLISH RATE FOR DIELECTRICS - A method of manufacturing a semiconductor structure includes varying local chemical mechanical polishing (CMP) abrading rates of an insulator film by selectively varying a carbon content of the insulator film. | 06-13-2013 |
20140035169 | TOP CORNER ROUNDING OF DAMASCENE WIRE FOR INSULATOR CRACK SUPPRESSION - A structure and method for fabricating the structure that provides a metal wire having a first height at an upper surface. An insulating material surrounding said metal wire is etched to a second height below said first height of said upper surface. The metal wire from said upper surface, after etching said insulating material, is planarized to remove sufficient material from a lateral edge portion of said metal wire such that a height of said lateral edge portion is equivalent to said second height of said insulating material surrounding said metal wire. | 02-06-2014 |
Patent application number | Description | Published |
20090021085 | DESIGN STRUCTURES, METHOD AND SYSTEMS OF POWERING ON INTEGRATED CIRCUIT - Design structures, method and systems of powering on an integrated circuit (IC) are disclosed. In one embodiment, the system includes a region in the IC including functional logic, a temperature sensor for sensing a temperature in the region when the IC is powered up and a heating element therefor; a processing unit including: a comparator for comparing the temperature against a predetermined temperature value, a controller, which in the case that the temperature is below the predetermined temperature value, delays functional operation of the IC and controls heating of the region of the IC, and a monitor for monitoring the temperature in the region; and wherein the controller, in the case that the temperature rises above the predetermined temperature value, ceases the heating and initiates functional operation of the IC. | 01-22-2009 |
20090022203 | METHOD AND SYSTEMS OF POWERING ON INTEGRATED CIRCUIT - Method and systems of powering on an integrated circuit (IC) are disclosed. In one embodiment, the system includes a region in the IC including functional logic, a temperature sensor for sensing a temperature in the region when the IC is powered up and a heating element therefor; a processing unit including: a comparator for comparing the temperature against a predetermined temperature value, a controller, which in the case that the temperature is below the predetermined temperature value, delays functional operation of the IC and controls heating of the region of the IC, and a monitor for monitoring the temperature in the region; and wherein the controller, in the case that the temperature rises above the predetermined temperature value, ceases the heating and initiates functional operation of the IC. | 01-22-2009 |
20090024972 | STRUCTURES OF POWERING ON INTEGRATED CIRCUIT - Design structures, method and systems of powering on an integrated circuit (IC) are disclosed. In one embodiment, the system includes a region in the IC including functional logic, a temperature sensor for sensing a temperature in the region when the IC is powered up and a heating element therefor; a processing unit including: a comparator for comparing the temperature against a predetermined temperature value, a controller, which in the case that the temperature is below the predetermined temperature value, delays functional operation of the IC and controls heating of the region of the IC, and a monitor for monitoring the temperature in the region; and wherein the controller, in the case that the temperature rises above the predetermined temperature value, ceases the heating and initiates functional operation of the IC. | 01-22-2009 |
20090106724 | Transition Balancing For Noise Reduction/Di/Dt Reduction During Design, Synthesis, and Physical Design - An embodiment of a design structure is shown for noise reduction comprising synthesizing blocks of sequential latches, e.g., a pipeline circuit architecture or clocking domain, which comprises combinational logic, synthesizing a root or a master clock and at least one phase-shifted sub-domain clock for each block, assigning primary inputs and primary outputs of the block to the root clock, assigning non-primary inputs and non-primary outputs of the block to the sub-domain clock, splitting root clock inputs into root clock inputs and phase-shifted sub-domain clock inputs, assigning each of the blocks a different phase-shifted sub-domain clock phase offset, creating a clock generation circuitry for the root clocks and the phase-shifted sub-domain clocks. | 04-23-2009 |
20100201377 | Critical Path Redundant Logic for Mitigation of Hardware Across Chip Variation - Cross-die connection structure and method for a die or chip includes buffer elements having a buffer driver and bypass, and control lines coupled to the buffer elements in order to select one of the buffer driver and bypass for each respective buffer element. A logic network is arranged with the buffer elements to form functional paths, a test unit is structured and arranged to test the functional paths and to be coupled to the control lines, and a configuration storage register to set the selected one of the buffer driver and bypass for each passing functional path. | 08-12-2010 |