| Patent application number | Description | Published |
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| 20090213446 | SOLAR MODULE PATTERNING APPARATUS - A solar module patterning apparatus comprises a laser oscillator, a homogenizer and a scanner. The laser oscillator generates a laser beam having a predetermined wavelength. The homogenizer homogenizes an intensity distribution of the generated laser beam provided from the laser oscillator. The scanner scans the laser beam to a solar module. The laser beam is output from the homogenizer and passed through a mask with a predetermined pattern. | 08-27-2009 |
| 20090239326 | METHOD FOR MANUFACTURING MICROCRYSTALLINE SILICON SOLAR CELL - A method for manufacturing a microcrystalline silicon solar cell comprises forming a zinc oxide transparent electrode with a textured surface on an insulation substrate by chemical vapor deposition, etching the zinc oxide transparent electrode with acid water solution and depositing a microcrystalline silicon thin film on the zinc oxide transparent electrode with the textured surface. | 09-24-2009 |
| 20090242020 | THIN-FILM PHOTOVOLTAIC CELL, THIN-FILM PHOTOVOLTAIC MODULE AND METHOD OF MANUFACTURING THIN-FILM PHOTOVOLTAIC CELL - A method of manufacturing a thin-film photovoltaic cell, comprises laminating a transparent electrode on a transparent substrate, laminating a photovoltaic layer on the transparent electrode, laminating a metal electrode layer on the photovoltaic layer and laminating a buffer layer on the metal electrode layer, the buffer layer being made of a moisture resistance material. | 10-01-2009 |
| 20090255581 | THIN FILM SILICON SOLAR CELL AND MANUFACTURING METHOD THEREOF - A thin film silicon solar cell comprises a front transparent electrode, a p-type window layer, a buffer layer, an i-type absorber layer, an n-type layer and a metal rear electrode. The front transparent electrode is stacked on a transparent substrate. The p-type window layer is stacked on the front transparent electrode, and has a thickness in a range of 12 nm to 17 nm. The buffer layer is stacked on the p-type window layer, and has a carbon concentration in a range of 0.5 to 3.0 atomic % and a thickness in a range of 3 to 8 nm. The i-type absorber layer is stacked on the buffer layer. The n-type layer is stacked on the i-type absorber layer. The metal rear electrode is stacked on the n-type layer. | 10-15-2009 |
| 20090293936 | TANDEM THIN-FILM SILICON SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A tandem thin-film silicon solar cell comprises a transparent substrate, a first unit cell positioned on the transparent substrate, the first unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer, an intermediate reflection layer positioned on the first unit cell, the intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which the oxygen concentration is profiled to be gradually increased and a second unit cell positioned on the intermediate reflection layer, the second unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer. | 12-03-2009 |
| 20100084005 | SOLAR CELL MODULE - A solar cell module comprises a solar cell panel, a solar cell frame including an insertion groove in which a peripheral portion of the solar cell panel is inserted and a protrusion located within a corner part of the solar cell frame between a rear surface of the solar cell panel and a surface of the insertion groove facing each other. | 04-08-2010 |
| 20100304524 | MANUFACTURING METHODS OF THIN FILM SOLAR CELL AND THIN FILM SOLAR CELL MODULE - A manufacturing method of a thin film solar cell comprises performing dry cleaning of an insulation substrate on which a transparent electrode is formed, patterning the transparent electrodes to be spaced apart from each other, performing dry cleaning of the patterned transparent electrodes, forming a semiconductor layer on surfaces of the transparent electrodes and patterning a metal electrode on the semiconductor layer. | 12-02-2010 |
| 20100313948 | Photovoltaic Device and Manufacturing Method Thereof - A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer; and wherein the light absorbing layer included in at least the one photoelectric transformation layer includes a first sub-layer and a second sub-layer, each of which includes hydrogenated amorphous silicon based material and a crystalline silicon grain respectively. | 12-16-2010 |
| 20100313949 | Photovoltaic Device and Manufacturing Method Thereof - A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; a plurality of photoelectric transformation layers disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer; and a second electrode disposed on a plurality of the photoelectric transformation layers; wherein the light absorbing layer comprised in at least one of a plurality of the photoelectric transformation layers comprises a first sub-layer and a second sub-layer, each of which comprises hydrogenated amorphous silicon and hydrogenated proto-crystalline silicon respectively, and wherein a thickness of the first sub-layer is actually the same as a thickness of the second sub-layer. | 12-16-2010 |
| 20110000537 | Photovoltaic Device and Manufacturing Method Thereof - A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer, wherein the light absorbing layer includes a first sub-layer and a second sub-layer, each of which includes a hydrogenated amorphous silicon based material respectively; and wherein the first sub-layer and the second sub-layer include a non-silicon based element, and the second sub-layer includes a crystalline silicon grain surrounded by the hydrogenated amorphous silicon based element. | 01-06-2011 |
| 20110005588 | Photovoltaic Device and Manufacturing Method Thereof - A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer; wherein the light absorbing layer includes the first sub-layer and the second sub-layer, the first sub-layer including hydrogenated micro-crystalline silicon germanium (μc-SiGe:H) and an amorphous silicon germanium network (a-SiGe:H) formed among the hydrogenated micro-crystalline silicon germaniums, the second sub-layer including hydrogenated micro-crystalline silicon (μc-Si:H) and an amorphous silicon network (a-Si:H) formed among the hydrogenated micro-crystalline silicons. | 01-13-2011 |
| 20110048499 | PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a photovoltaic device. The photovoltaic device includes a substrate; a first unit cell disposed on the substrate and comprising a p-type window layer, an i-type photoelectric conversion layer and an n-type layer; an intermediate reflector disposed on the first unit cell and comprising a hydrogenated n-type microcrystalline silicon carbide or a hydrogenated n-type microcrystalline silicon nitride profiled such that carbon concentration or nitride concentration is higher the farther it is from a light incident side; and a second unit cell disposed on the intermediate reflector and comprising a p-type window layer, an i-type photoelectric conversion layer and an n-type layer. | 03-03-2011 |
| 20110056538 | PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a method for manufacturing a photovoltaic device. The method includes: forming a first electrode on a substrate; forming a first unit cell converting light into electricity on the first electrode; forming an intermediate reflector on the first unit cell, the intermediate reflector including metallic nanoparticles arranged therein; and forming a second unit cell converting light into electricity on the intermediate reflector. | 03-10-2011 |
| 20110061716 | PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a method for manufacturing a photovoltaic device. The method comprising: forming a first electrode on a substrate; forming a first unit cell on the first electrode, the first unit cell comprising an intrinsic semiconductor layer; forming an intermediate reflector on the first unit cell, the intermediate reflector comprises a plurality of sub-layers stacked alternately by modulating applied voltages in accordance with time, the applied voltages exciting plasma and having mutually different frequencies; forming a second unit cell on the intermediate reflector, the second unit cell comprising an intrinsic semiconductor layer; and forming a second electrode on the second unit cell. | 03-17-2011 |
| 20110061725 | PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a method for manufacturing a photovoltaic device. The method comprising: forming a first electrode on a substrate; forming a first unit cell comprising an intrinsic semiconductor layer on the first electrode; forming an intermediate reflector on the first unit cell, and the intermediate reflector comprising a plurality of sub-layers stacked alternately by changing a flow rate of non-silicon based source gas; forming a second unit cell comprising an intrinsic semiconductor layer on the intermediate reflector; and forming a second electrode on the second unit cell. | 03-17-2011 |
| 20110126893 | THIN FILM SILICON SOLAR CELL AND MANUFACTURING METHOD THEREOF - A thin film silicon solar cell comprises a front transparent electrode, a p-type window layer, a buffer layer, an i-type absorber layer, an n-type layer and a metal rear electrode. The front transparent electrode is stacked on a transparent substrate. The p-type window layer is stacked on the front transparent electrode, and has a thickness in a range of 12 nm to 17 nm. The buffer layer is stacked on the p-type window layer, and has a carbon concentration in a range of 0.5 to 3.0 atomic % and a thickness in a range of 3 to 8 nm. The i-type absorber layer is stacked on the buffer layer. The n-type layer is stacked on the i-type absorber layer. The metal rear electrode is stacked on the n-type layer. | 06-02-2011 |
| 20110220197 | PHOTOVOLTAIC DEVICE INCLUDING FLEXIBLE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a photovoltaic device. The photovoltaic device includes: a flexible substrate; a first electrode and a second electrode located over the flexible substrate; and at least one unit cell located between the first electrode and the second electrode, wherein the first electrode includes a transparent conductive oxide layer, wherein a texturing structure is formed on the transparent conductive oxide layer, and wherein a ratio of a root mean square (rms) roughness to an average pitch of the texturing structure is equal to or more than 0.05 and equal to or less than 0.13. | 09-15-2011 |
| 20110221026 | PHOTOVOLTAIC DEVICE INCLUDING A SUBSTRATE OR A FLEXIBLE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a photovoltaic device. The photovoltaic device of the present invention includes: a first electrode and a second electrode, which are sequentially placed on a substrate; a first photoelectric conversion layer being placed between the first electrode and the second electrode, and including an n-type semiconductor layer, an intrinsic semiconductor layer and a p-type semiconductor layer, which are sequentially stacked; a second photoelectric conversion layer being placed between the first photoelectric conversion layer and the second electrode, and including an n-type semiconductor layer, an intrinsic semiconductor layer and a p-type semiconductor layer, which are sequentially stacked; and light transmitting particles placed within the second electrode. | 09-15-2011 |
| 20110226318 | PHOTOVOLTAIC DEVICE INCLUDING FLEXIBLE OR INFLEXIBEL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a photovoltaic device. The photovoltaic device includes: a first electrode and a second electrode; a first unit cell and a second unit cell which are placed between the first electrode and the second electrode and include a first conductive semiconductor layer, an intrinsic semiconductor layer and a second conductive semiconductor layer; and an intermediate reflector which is placed between the first unit cell and the second unit cell, and includes a hydrogenated amorphous carbon layer. | 09-22-2011 |
| 20110232732 | PHOTOVOLTAIC DEVICE INCLUDING FLEXIBLE SUBSTRATE OR INFLEXIBLE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode. | 09-29-2011 |
| 20110232754 | PHOTOVOLTAIC DEVICE INCLUDING FLEXIBLE OR INFLEXIBLE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a photovoltaic device. The photovoltaic device according to the present invention includes: a first electrode; a second electrode; and a p-type window layer, a buffer layer, a light absorbing layer and an n-type layer, which are sequentially stacked between the first electrode and the second electrode, wherein, when the p-type window layer is composed of hydrogenated amorphous silicon oxide, the buffer layer is composed of either hydrogenated amorphous silicon carbide or hydrogenated amorphous silicon oxide, and wherein, when the p-type window layer is composed of hydrogenated amorphous silicon carbide, the buffer layer is composed of hydrogenated amorphous silicon oxide. | 09-29-2011 |
| 20110244618 | METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE INCLUDING FLEXIBLE OR INFLEXIBLE SUBSTRATE - Disclosed is a method for manufacturing a photovoltaic device including: a forming the first sub-layer including impurity by allowing first flow rate values of the source gas introduced into one group of a first group consisting of odd numbered process chambers and a second group consisting of even numbered process chambers to be maintained constant in each of the process chambers of the one group; and a forming the second sub-layer including impurity by allowing second flow rate values of the source gas introduced into the other group of the first group and the second group to be maintained constant in each of the process chambers of the other group, wherein the second flow rate values are less than the first flow rate values. | 10-06-2011 |
| 20110253203 | TANDEM PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a photovoltaic device that comprises: a first electrode including a transparent conductive oxide layer; a first unit cell being placed on the first electrode; a second unit cell being placed on the first unit cell; and a second electrode being placed on the second unit cell, wherein the intrinsic semiconductor layer of the first unit cell includes hydrogenated amorphous silicon or hydrogenated amorphous silicon based material, wherein an intrinsic semiconductor layer of the second unit cell includes hydrogenated microcrystalline silicon or hydrogenated microcrystalline silicon based material, and wherein a ratio of a root mean square roughness to an average pitch of a texturing structure formed on the surface of the first electrode is equal to or more than 0.05 and equal to or less than 0.13. | 10-20-2011 |
| 20110259403 | PHOTOVOLTAIC DEVICE AND MANUFACTURING THEREOF - Disclosed is a method for manufacturing a photovoltaic device. The method comprises forming a first electrode, a photoelectric conversion layer and a second electrode on a substrate sequentially; forming an insulating layer covering the second electrode; forming a first trench line and a second trench line in the insulating layer on the second electrode such that the second electrode is exposed, wherein at least two photovoltaic cells are included between the first trench line and the second trench line; and forming a first conductive bus bar and a second conductive bus bar by filling the first and the second trench lines with a conductive material. | 10-27-2011 |
| 20110294248 | METHOD FOR HEATING A SUBSTRATE OF SOLAR CELL - Disclosed is a method for heating a substrate of a solar cell. The method includes: providing a single or poly crystalline substrate; heating the substrate at atmosphere by a non-contact heater; and forming a thin film, which includes amorphous silicon or silicon alloy, on the substrate. | 12-01-2011 |
| 20110294249 | METHOD FOR CLEANING A SUBSTRATE OF SOLAR CELL - Disclosed is a method for cleaning the substrate of a solar cell. The method includes: providing a single or poly crystalline substrate; performing a wet etching process such that the surface of the substrate is textured; performing an atmospheric pressure plasma cleaning process on the textured substrate; and forming p-n junction. | 12-01-2011 |
| 20120009724 | METHOD FOR HANDLING A FLEXIBLE SUBSTRATE OF SOLAR CELL - Disclosed is a method for handling a flexible substrate of solar cell. The method includes: providing a flexible substrate; performing static electricity removal and atmospheric pressure plasma cleaning with respect to the flexible substrate; forming a first electrode on the flexible substrate; forming a first conductive semiconductor layer, an intrinsic semiconductor layer and a second conductive semiconductor layer on the first electrode; and forming a second electrode on the second conductive semiconductor layer. | 01-12-2012 |
| 20120060906 | PHOTOVOLTAIC DEVICE INCLUDING FLEXIBLE OR INFLEXIBLE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a method for manufacturing a photovoltaic device including a substrate; a first electrode and a second electrode which are placed over the substrate; a first conductive semiconductor layer, an intrinsic semiconductor layer including a first sub-layer and a second sub-layer, and a second conductive semiconductor layer, which are placed between the first electrode and the second electrode. The method comprising: forming the first sub-layer having a first crystal volume fraction in an ‘i’-th process chamber group (‘i’ is a natural number equal to or greater than 1) among a plurality of process chamber groups; and forming the second sub-layer in an ‘i+1’-th process chamber group among the plurality of the process chamber groups, the second sub-layer contacting with the first sub-layer, including crystalline silicon grains and having a second crystal volume fraction greater than the first crystal volume fraction. | 03-15-2012 |
| 20120067409 | PHOTOVOLTAIC DEVICE INCLUDING AN INFLEXIBLE OR A FLEXIBLE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a method for manufacturing a photovoltaic device that includes: providing a substrate having a first electrode formed thereon; forming a first unit cell, the first unit cell including a first conductive silicon layer, an intrinsic silicon layer and a second conductive silicon layer, which are sequentially stacked from the first electrode; exposing to the air either a portion of an intermediate reflector formed on the first unit cell or the second conductive silicon layer of the first unit cell; forming the rest of the intermediate reflector or the entire intermediate reflector on the second conductive silicon layer of the first unit cell in a second manufacturing system; and forming a second unit cell on the intermediate reflector in the second manufacturing system, the second unit cell including a first conductive silicon layer, an intrinsic silicon layer and a second conductive silicon layer, sequentially stacked. | 03-22-2012 |
| 20120067416 | Photovoltaic Device - Disclosed is a photovoltaic device that includes: a substrate; a first electrode disposed on the substrate; a photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer which comprises at least one pair of an intrinsic first sub-layer and an intrinsic second sub-layer, each of which comprises hydrogenated amorphous silicon and hydrogenated proto-crystalline silicon; and a second electrode disposed on the photoelectric transformation layer; wherein a thickness ratio between the first sub-layer and the second sub-layer in each of the pair is constant. | 03-22-2012 |
| 20120070935 | TANDEM THIN-FILM SILICON SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A tandem thin-film silicon solar cell comprises a transparent substrate, a first unit cell positioned on the transparent substrate, the first unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer, an intermediate reflection layer positioned on the first unit cell, the intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which the oxygen concentration is profiled to be gradually increased and a second unit cell positioned on the intermediate reflection layer, the second unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer. | 03-22-2012 |
| 20120073636 | PHOTOVOLTAIC DEVICE INCLUDING FLEXIBLE OR INFLEXIBLE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a method for manufacturing a photovoltaic device. The method includes: forming a first electrode on a substrate; forming a first unit cell on the first electrode; forming a portion of an intermediate reflector on the first unit cell in a first manufacturing system, the intermediate reflector including a plurality of first and second sub-layers alternately stacked; exposing to the air the substrate on which the portion of the intermediate reflector is formed; forming the rest of the intermediate reflector in a second manufacturing system, the intermediate reflector including the plurality of the first and second sub-layers alternately stacked; forming a second unit cell on the intermediate reflector; and forming a second electrode on the second unit cell. | 03-29-2012 |
| 20120073644 | Photovoltaic Device - Disclosed is a photovoltaic device that includes: a substrate; a first electrode disposed on the substrate; a photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer which comprises at least one pair of an intrinsic first sub-layer and an intrinsic second sub-layer, each of which comprises hydrogenated amorphous silicon based material and hydrogenated proto-crystalline silicon based material having a crystalline silicon grain; and a second electrode disposed on the photoelectric transformation layer. | 03-29-2012 |
| 20120118374 | PHOTOVOLTAIC DEVICE - Provided is a photovoltaic device that includes: a substrate; a first electrode disposed on the substrate: a photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer which comprises at least one pair of an intrinsic first sub-layer and an intrinsic second sub-layer, each of which comprises a hydrogenated amorphous silicon based material and a hydrogenated proto-crystalline silicon based material having a crystalline silicon grain, and comprises a non-silicon based element; and a second electrode disposed on the photoelectric transformation layer. | 05-17-2012 |
| 20120125429 | SEE-THROUGH TYPE PHOTOVOLTAIC MODULE INCLUDING 3-DIMENSIONAL PHOTONIC CRYSTAL, MANUFACTURING METHOD THEREOF, AND INSULATED GLASS UNIT INCLUDING THE SAME - Disclosed is a see-through type photovoltaic module that includes: a first transparent substrate; a second transparent substrate; a first transparent electrode and a second electrode, all of which are placed between the first transparent substrate and the second transparent substrate; a photoactive layer being placed between the first transparent electrode and the second electrode and converting light into electrical energy; and a protective layer placed between the second electrode and the second transparent substrate, wherein a 3-dimensional photonic crystal structural layer is formed on the surface of the second transparent substrate facing the first transparent substrate. | 05-24-2012 |
| 20120318329 | INTEGRATED THIN FILM PHOTOVOLTAIC MODULE AND MANUFACTURING METHOD THEREOF - Disclosed is an integrated thin film photovoltaic module that includes: a first cell and a second cell, all of which are formed respectively by stacking on a substrate a lower electrode, a photoelectric conversion layer, and an upper electrode, wherein the lower electrode of the first cell and the lower electrode of the second cell are separated by a lower electrode separation groove, and wherein a plurality of through holes are formed to be spaced from each other in the photoelectric conversion layer of the second cell in order to connect the upper electrode of the first cell with the lower electrode of the second cell. | 12-20-2012 |
| 20120325302 | PHOTOVOLTAIC DEVICE INCLUDING FLEXIBLE OR INFLEXIBLE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a photovoltaic device. The photovoltaic device according to the present invention includes: a first electrode; a second electrode; and a p-type window layer, a buffer layer, a light absorbing layer and an n-type layer, which are sequentially stacked between the first electrode and the second electrode, wherein, when the p-type window layer is composed of hydrogenated amorphous silicon oxide, the buffer layer is composed of either hydrogenated amorphous silicon carbide or hydrogenated amorphous silicon oxide, and wherein, when the p-type window layer is composed of hydrogenated amorphous silicon carbide, the buffer layer is composed of hydrogenated amorphous silicon oxide. | 12-27-2012 |
| 20120325303 | PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a photovoltaic device. The photovoltaic device includes a substrate; a first unit cell disposed on the substrate and comprising a p-type window layer, an i-type photoelectric conversion layer and an n-type layer; an intermediate reflector disposed on the first unit cell and comprising a hydrogenated n-type microcrystalline silicon carbide or a hydrogenated n-type microcrystalline silicon nitride profiled such that carbon concentration or nitride concentration is higher the farther it is from a light incident side; and a second unit cell disposed on the intermediate reflector and comprising a p-type window layer, an i-type photoelectric conversion layer and an n-type layer. | 12-27-2012 |
| 20130061915 | THIN FILM SOLAR CELLS AND MANUFACTURING METHOD THEREOF - A thin film silicon solar cell including: a front transparent electrode stacked on a transparent insulating substrate; a p-type layer stacked on the front transparent electrode; an i-type photoelectric conversion layer stacked on the p-type layer; an n-type Saver stacked, on the i-type photoelectric conversion layer; and a metal back electrode layer stacked on the n-type layer, wherein the n-type layer includes: an n-type amorphous silicon first n layer which is stacked on the i-type photoelectric conversion layer and has a thickness of 3 nm to 7 nm; and an n-type silicon second n layer which is stacked on the first n layer and has a thickness of 15 nm to 30 nm and is more highly hydrogen-diluted than the first n layer. | 03-14-2013 |
| 20130167917 | THIN FILM TYPE SOLAR CELLS AND MANUFACTURING METHOD THEREOF - Disclosed is a thin film silicon solar cell including: a substrate; a first electrode which is stacked on the substrate; a unit cell which is stacked on the first electrode; and a second electrode which is stacked on the unit cell, wherein the unit cell includes a p-type window layer, an i-type photoelectric conversion layer and an n-type layer, and wherein the n-type layer includes an n-type silicon alloy reflector profiled such that a concentration of a refractive index reduction element is changed gradually or alternately with the increase in a distance from a light incident side. | 07-04-2013 |
| 20130167918 | PHOTOVOLTAIC DEVICE - Disclosed is a photovoltaic device including a first electrode including a transparent conductive oxide layer; a metal oxide layer which is placed on the first electrode; a photoelectric conversion layer which is placed on the metal oxide layer and includes a p-type semiconductor layer, an intrinsic semiconductor layer and an n-type semiconductor layer; and a second electrode which is placed on the photoelectric conversion layer. | 07-04-2013 |
| 20130206216 | TANDEM TYPE INTEGRATED PHOTOVOLTAIC MODULE AND MANUFACTURING METHOD THEREOF - Disclosed is a tandem type integrated photovoltaic module. The tandem type integrated photovoltaic module includes: a first cell and a second cell, all of which are formed respectively by stacking on a substrate a lower electrode, a photoelectric conversion layer including a plurality of unit cell layers, and an upper electrode, wherein the lower electrode of the first cell and the lower electrode of the second cell are separated by a lower electrode separation groove, and wherein a plurality of through holes are formed to be spaced from each other in the photoelectric conversion layer of the second cell in order to connect the upper electrode of the first cell with the lower electrode of the second cell. | 08-15-2013 |
| 20130312815 | INTEGRATED THIN FILM PHOTOVOLTAIC MODULE AND MANUFACTURING METHOD THEREOF - Disclosed is an integrated thin-film photovoltaic module. The integrated thin-film photovoltaic module includes a first cell and a second cell, all of which are formed respectively by stacking on a substrate a lower electrode, a photoelectric conversion layer and an upper electrode, wherein the lower electrode of the first cell and the lower electrode of the second cell are separated by a lower electrode separation groove, wherein a plurality of through holes are formed to be spaced from each other in the upper electrode and the photoelectric conversion layer of the first cell, and wherein the through hole is filled with a conductive material such that the upper electrode of the second cell is connected with the lower electrode of the first cell. | 11-28-2013 |
| 20130312816 | TANDEM TYPE INTEGRATED PHOTOVOLTAIC MODULE AND MANUFACTURING METHOD THEREOF - Disclosed is a tandem type integrated photovoltaic module. The tandem type integrated photovoltaic module includes a first cell and a second cell, all of which are formed respectively by stacking on a substrate a lower electrode, a photoelectric conversion layer and an upper electrode, wherein the photoelectric conversion layer comprises a first unit cell layer, a second unit cell layer and an intermediate reflector located between the first unit cell layer and the second unit cell layer; wherein the lower electrode of the first cell and the lower electrode of the second cell are separated by a lower electrode separation groove, and wherein a plurality of through holes are formed to be spaced from each other in the photoelectric conversion layer on the lower electrode of the first cell in order to connect the upper electrode of the second cell with the lower electrode of the first cell. | 11-28-2013 |
| 20130340818 | PHOTOVOLTAIC DEVICE INCLUDING FLEXIBLE SUBSTRATE OR INFLEXIBLE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A photovoltaic device including a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode. | 12-26-2013 |
| 20140150856 | PHOTOVOLTAIC MODULE - Disclosed is a photovoltaic module which includes a plurality of stacked unit cells and is encapsulated by an encapsulant and is designed such that an initial short circuit current of the photovoltaic module under standard test conditions is determined by the initial short circuit current of a top cell or a bottom cell among the plurality of the unit cells in accordance with a nominal operating cell temperature of the photovoltaic module. | 06-05-2014 |
