Patent application number | Description | Published |
20140110701 | ORGANIC LIGHT EMITTING DISPLAY WITH LUMINESCENT LAYERS HAVING VARYING THICKNESSES TO IMPROVE COLOR REPRODUCIBILITY - An organic light emitting display is disclosed. In one aspect, the display includes a substrate, thin film transistors disposed on the substrate, first, second, and third pixel definition layers disposed on the thin film transistors, respectively having openings, and respectively having first, second, and third heights different from each other, and first, second, and third organic light emitting devices disposed in the openings of the first, second, and third pixel definition layers and connected to the thin film transistors, respectively. The first, second, and third pixel definition layers are spaced apart from each other, the first, second, and third organic light emitting devices have different thicknesses from each other, and the first, second, and third organic light emitting devices have thicknesses respectively corresponding to the first, second, and third heights of the first, second, and third pixel definition layers. | 04-24-2014 |
Patent application number | Description | Published |
20090315170 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH EMBEDDED CIRCUITRY AND POST, AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a shaped platform with a conductive post; mounting the shaped platform with the conductive post over a temporary carrier; mounting an integrated circuit device over the temporary carrier; encapsulating the conductive post and the integrated circuit device; removing a portion of the shaped platform isolating the conductive post; and removing the temporary carrier. | 12-24-2009 |
20100148336 | INTEGRATED CIRCUIT PACKAGING SYSTEM HAVING THROUGH SILICON VIAS WITH PARTIAL DEPTH METAL FILL REGIONS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a silicon substrate having a circuitry layer; creating a partial via through the circuitry layer; filling the partial via with a plug having a bottom surface; creating a recess that is angled outward and exposes the bottom surface of the plug; and coating the recess with a recess-insulation-layer while leaving the bottom surface of the plug exposed. | 06-17-2010 |
20100170086 | DEVICE, UNIT, SYSTEM AND METHOD FOR THE MAGNETICALLY-ASSISTED ASSEMBLING OF CHIP-SCALE, AND NANO AND MICRO-SCALE COMPONENTS ONTO A SUBSTRATE - A magnetically-assisted chip assembly unit for assembling at least one chip having a mounting surface and an attachment surface, wherein the attachment surface supports a magnetisable layer thereon and opposes said mounting surface, onto a substrate that has a corresponding chip mounting surface. The unit comprises a template wafer having at least one recess adapted to accommodate therein said chip; and a master wafer having at least one magnetisable element; wherein the template wafer is mounted on the master wafer and said magnetisable element is located at least proximate to the at least one recess such that the magnetisable element is capable of manipulating the chip into the recess, via its magnetisable layer when the magnetisable element is magnetized and generates a magnetic field. Once in the recess, the attachment surface of the chip faces at least a portion of the recess and the mounting surface of the chip faces an opening of the recess. | 07-08-2010 |
20100327406 | Semiconductor Device and Method of Forming Inductor Over Insulating Material Filled Trench In Substrate - A semiconductor device has a trench formed in a substrate. The trench has tapered sidewalls and depth of 10-120 micrometers. A first insulating layer is conformally applied over the substrate and into the trench. An insulating material, such as polymer, is deposited over the first insulating layer in the trench. A first conductive layer is formed over the insulating material. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and electrically contacts the first conductive layer. The first and second conductive layers are isolated from the substrate by the insulating material in the trench. A third insulating layer is formed over the second insulating layer and second conductive layer. The first and second conductive layers are coiled over the substrate to exhibit inductive properties. | 12-30-2010 |
20110127678 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH EMBEDDED CIRCUITRY AND POST - An integrated circuit packaging system includes: an integrated circuit device; a conductive post adjacent the integrated circuit device, the conductive post with a contact surface having characteristics of a shaped platform removed; and an encapsulant around the conductive post and the integrated circuit device with the conductive post extending through the encapsulant and each end of the conductive post exposed from the encapsulant. | 06-02-2011 |
20110204505 | Semiconductor Device and Method of Forming TMV and TSV in WLCSP Using Same Carrier - A semiconductor device has a semiconductor die mounted over a carrier. An encapsulant is deposited over the semiconductor die and carrier. An insulating layer is formed over the semiconductor die and encapsulant. A plurality of first vias is formed through the insulating layer and semiconductor die while mounted to the carrier. A plurality of second vias is formed through the insulating layer and encapsulant in the same direction as the first vias while the semiconductor die is mounted to the carrier. An electrically conductive material is deposited in the first vias to form conductive TSV and in the second vias to form conductive TMV. A first interconnect structure is formed over the insulating layer and electrically connected to the TSV and TMV. The carrier is removed. A second interconnect structure is formed over the semiconductor die and encapsulant and electrically connected to the TSV and TMV. | 08-25-2011 |
20110298101 | Semiconductor Device and Method of Forming EMI Shielding Layer with Conductive Material Around Semiconductor Die - A semiconductor device has a plurality of first semiconductor die mounted over an interface layer formed over a temporary carrier. An encapsulant is deposited over the first die and carrier. A flat shielding layer is formed over the encapsulant. A channel is formed through the shielding layer and encapsulant down to the interface layer. A conductive material is deposited in the channel and electrically connected to the shielding layer. The interface layer and carrier are removed. An interconnect structure is formed over conductive material, encapsulant, and first die. The conductive material is electrically connected through the interconnect structure to a ground point. The conductive material is singulated to separate the first die. A second semiconductor die can be mounted over the first die such that the shielding layer covers the second die and the conductive material surrounds the second die or the first and second die. | 12-08-2011 |
20120056312 | Semiconductor Device and Method of Forming TSV Semiconductor Wafer with Embedded Semiconductor Die - A semiconductor device has a TSV semiconductor wafer with a cavity formed in a first surface of the wafer. A second cavity can be formed in a second surface of the wafer. A plurality of semiconductor die is mounted within the cavities. The semiconductor die can be mounted side-by-side and/or stacked within the cavity. Conductive TSV can be formed through the die. An encapsulant is deposited within the cavity over the die. A CTE of the die is similar to a CTE of the encapsulant. A first interconnect structure is formed over a first surface of the encapsulant and wafer. A second interconnect structure is formed over a second surface of the encapsulant and wafer. The first and second interconnect structure are electrically connected to the TSV wafer. A second semiconductor die can be mounted over the first interconnect structure with encapsulant deposited over the second die. | 03-08-2012 |
20120056316 | Semiconductor Device and Method of Forming Different Height Conductive Pillars to Electrically Interconnect Stacked Laterally Offset Semiconductor Die - A semiconductor device has a first semiconductor die mounted over a carrier. Wettable contact pads can be formed over the carrier. A second semiconductor die is mounted over the first semiconductor die. The second die is laterally offset with respect to the first die. An electrical interconnect is formed between an overlapping portion of the first die and second die. A plurality of first conductive pillars is disposed over the first die. A plurality of second conductive pillars is disposed over the second die. An encapsulant is deposited over the first and second die and first and second conductive pillars. A first interconnect structure is formed over the encapsulant, first conductive pillars, and second die. The carrier is removed. A second interconnect structure is formed over the encapsulant, second conductive pillars, and first die. A third conductive pillar is formed between the first and second build-up interconnect structures. | 03-08-2012 |
20120056329 | Semiconductor Device and Method of Forming Interposer Frame Over Semiconductor Die to Provide Vertical Interconnect - A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame. | 03-08-2012 |
20130075903 | Semiconductor Device and Method of Forming Different Height Conductive Pillars to Electrically Interconnect Stacked Laterally Offset Semiconductor Die - A semiconductor device has a first semiconductor die mounted over a carrier. Wettable contact pads can be formed over the carrier. A second semiconductor die is mounted over the first semiconductor die. The second die is laterally offset with respect to the first die. An electrical interconnect is formed between an overlapping portion of the first die and second die. A plurality of first conductive pillars is disposed over the first die. A plurality of second conductive pillars is disposed over the second die. An encapsulant is deposited over the first and second die and first and second conductive pillars. A first interconnect structure is formed over the encapsulant, first conductive pillars, and second die. The carrier is removed. A second interconnect structure is formed over the encapsulant, second conductive pillars, and first die. A third conductive pillar is formed between the first and second build-up interconnect structures. | 03-28-2013 |
20130105989 | Semiconductor Device and Method of Forming Interposer Frame Over Semiconductor Die to Provide Vertical Interconnect | 05-02-2013 |
20130292851 | Semiconductor Device and Method of Forming TSV Semiconductor Wafer with Embedded Semiconductor Die - A semiconductor device has a TSV semiconductor wafer with a cavity formed in a first surface of the wafer. A second cavity can be formed in a second surface of the wafer. A plurality of semiconductor die is mounted within the cavities. The semiconductor die can be mounted side-by-side and/or stacked within the cavity. Conductive TSV can be formed through the die. An encapsulant is deposited within the cavity over the die. A CTE of the die is similar to a CTE of the encapsulant. A first interconnect structure is formed over a first surface of the encapsulant and wafer. A second interconnect structure is formed over a second surface of the encapsulant and wafer. The first and second interconnect structure are electrically connected to the TSV wafer. A second semiconductor die can be mounted over the first interconnect structure with encapsulant deposited over the second die. | 11-07-2013 |
20140327145 | Semiconductor Device and Method of Forming Interposer Frame Over Semiconductor Die to Provide Vertical Interconnect - A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame. | 11-06-2014 |
Patent application number | Description | Published |
20130196233 | NEGATIVE ACTIVE MATERIAL, METHOD OF PREPARING THE SAME, NEGATIVE ELECTRODE FOR LITHIUM SECONDARY BATTERY INCLUDING NEGATIVE ACTIVE MATERIAL, AND LITHIUM SECONDARY BATTERY INCLUDING NEGATIVE ELECTRODE - A negative active material for a rechargeable lithium battery includes a Si—Al—Fe alloy represented by Formula 1. The Si—Al—Fe alloy includes a Si phase and an alloy phase, and the alloy phase includes Si, Al, and Fe in a ratio of atomic percentages of about 3:3:2: | 08-01-2013 |
20130202967 | NEGATIVE ACTIVE MATERIAL FOR RECHARGEABLE LITHIUM BATTERY AND RECHARGEABLE LITHIUM BATTERY INCLUDING SAME - A negative active material for a rechargeable lithium battery includes a matrix including an Si—X based alloy, where X is not Si and is selected from alkali metals, alkaline-earth metals, Group 13 elements, Group 14 elements, Group 15 elements, Group 16 elements, transition elements, rare earth elements, or combinations thereof; silicon dispersed in the matrix; and oxygen in the negative active material, the oxygen being included at 20 at % or less based on the total number of atoms in the negative active material. A rechargeable lithium battery includes the negative active material. | 08-08-2013 |
20130216912 | ELECTRODE FOR LITHIUM SECONDARY BATTERY, METHOD OF MANUFACTURING THE ELECTRODE, AND LITHIUM SECONDARY BATTERY INCLUDING THE ELECTRODE - An electrode for a lithium secondary battery includes a silicon-based alloy, and has a surface roughness of about 1 to about 10 μm and a surface roughness deviation of 5 μm or less. A method of manufacturing the electrode includes mixing an electrode composition, milling the composition, coating the milled composition on a current collector, and drying the milled composition. A lithium secondary battery includes the electrode. | 08-22-2013 |
20130266865 | NEGATIVE ACTIVE MATERIAL, LITHIUM BATTERY INCLUDING THE MATERIAL, AND METHOD FOR MANUFACTURING THE MATERIAL - A negative active material having controlled particle size distribution of silicon nanoparticles in a silicon-based alloy, a lithium battery including the negative active material, and a method of manufacturing the negative active material are disclosed. The negative active material may improve capacity and lifespan characteristics by inhibiting (or reducing) volumetric expansion of the silicon-based alloy. The negative active material may include a silicon-based alloy including: a silicon alloy-based matrix; and silicon nanoparticles distributed in the silicon alloy-based matrix, wherein a particle size distribution of the silicon nanoparticles satisfies D10≧10 nm and D90≦75 nm. | 10-10-2013 |
20140023927 | SILICON ALLOY BASED NEGATIVE ACTIVE MATERIAL AND COMPOSITION INCLUDING SAME AND METHOD OF PREPARING SAME AND LITHIUM RECHARGEABLE BATTERY - A silicon alloy-based negative active material includes a particle including a core including a silicon alloy-based material, and a coating layer including an organic binder. | 01-23-2014 |
20140038051 | NEGATIVE ACTIVE MATERIAL FOR LITHIUM BATTERY, METHOD OF PREPARING THE NEGATIVE ACTIVE MATERIAL, AND LITHIUM BATTERY EMPLOYING THE NEGATIVE ACTIVE MATERIAL - A negative active material for a lithium battery with an improved cycle characteristic and capacity retention rate, and the negative active material comprises a plurality of particles comprising a plurality of first particles comprising Si, Ti, and Ni; and composite particles comprising a plurality of second particles in which at least one element selected from the group consisting of Cu, Fe, Ni, Au, Ag, Pd, Cr, Mn, Ti, B, and P is partially or completely deposited on surface(s) of other of first particles, a method of preparing the negative active material, and a lithium battery including a negative electrode including the negative active material. | 02-06-2014 |
20140147750 | ANODE ACTIVE MATERIAL, LITHIUM SECONDARY BATTERY EMPLOYING THE SAME, AND METHOD OF PREPARING THE ANODE ACTIVE MATERIAL - An anode active material, a lithium battery including the anode active material, and a method of preparing the anode active material are provided. The anode active material includes an alloy containing silicon (Si), titanium (Ti) and nickel (Ni) elements, wherein the alloy includes a Si phase and an alloy phase, and a peak intensity ratio (I | 05-29-2014 |
20140212694 | COMPOSITE ANODE ACTIVE MATERIAL, ANODE INCLUDING THE SAME, LITHIUM BATTERY INCLUDING THE ANODE, AND METHOD OF PREPARING THE COMPOSITE ANODE ACTIVE MATERIAL - A composite anode active material, an anode including the composite anode active material, a lithium battery including the anode, and a method of preparing the composite anode active material, the composite anode active material including a core including a ternary alloy, the ternary alloy being capable of intercalating and deintercalating lithium; and a carbonaceous coating layer on the core. | 07-31-2014 |
20140272572 | ELECTRODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY, ELECTRODE FOR LITHIUM SECONDARY BATTERY INCLUDING THE SAME, AND LITHIUM SECONDARY BATTERY INCLUDING THE ELECTRODE - In an aspect, an electrode active material for a lithium secondary battery, the electrode active material including a silicon-based alloy and a coating film containing a polymer that includes a 3,4-ethylenedioxythiophene repeating unit and an oxyalkylene repeating unit, coated on the surface of the silicon-based alloy are provided. | 09-18-2014 |
20150021516 | NEGATIVE ACTIVE MATERIAL, NEGATIVE ELECTRODE AND LITHIUM BATTERY INCLUDING THE NEGATIVE ACTIVE MATERIAL, AND METHOD OF PREPARING THE NEGATIVE ACTIVE MATERIAL - A negative active material, a lithium battery including the negative active material, and a method of preparing the negative active material. The negative active material includes a silicon-based alloy including Si, Al, and Fe. The silicon-based alloy includes an active phase of silicon nanoparticles and an inactive phase of Si | 01-22-2015 |
20150056509 | NEGATIVE ACTIVE MATERIAL, NEGATIVE ELECTRODE AND LITHIUM BATTERY INCLUDING NEGATIVE ACTIVE MATERIAL, AND METHOD OF MANUFACTURING NEGATIVE ACTIVE MATERIAL - A negative active material, a negative electrode and a lithium battery including the same, and a method of manufacturing the negative active material are disclosed. The negative active material includes a silicon-based alloy including Si, Al, and Cu. Since the silicon-based alloy includes AlCu and Al | 02-26-2015 |
20150214544 | NEGATIVE ACTIVE MATERIAL, NEGATIVE ELECTRODE AND LITHIUM BATTERY INCLUDING THE NEGATIVE ACTIVE MATERIAL, AND METHOD OF MANUFACTURING THE NEGATIVE ACTIVE MATERIAL - A negative active material, a negative electrode, a lithium battery including the negative active material, and a method of manufacturing the negative active material, the negative electrode, and the lithium battery. The negative active material includes a silicon-based alloy including Si, Ti, Ni, and Fe components. The silicon-based alloy includes a Ti | 07-30-2015 |
20150295235 | ANODE ACTIVE MATERIAL, METHOD OF PREPARING THE SAME, AND LITHIUM SECONDARY BATTERY INCLUDING THE ANODE ACTIVE MATERIAL - An anode active material including a porous silicon having pores with a uniform average pore diameter, wherein the average pore diameter of the pores is in a range of about 50 nm to about 80 nm, a method of preparing the anode active material, and a lithium secondary battery including an anode including the anode active material. | 10-15-2015 |
Patent application number | Description | Published |
20120162217 | 3D MODEL SHAPE TRANSFORMATION METHOD AND APPARATUS - Disclosed herein is a 3D model shape transformation apparatus. The 3D model shape transformation apparatus includes a camera unit, a shape restoration unit, a skeleton structure generation unit, and a skeleton transformation unit. The camera unit obtains a plurality of 2D images in a single frame by capturing the shape of an object. The shape restoration unit generates a 3D volume model by restoring the shape of the object based on the plurality of 2D images. The skeleton structure generation unit generates the skeleton structure of the 3D volume model. The skeleton transformation unit transforms the size and posture of the 3D volume model into those of a template model by matching the skeleton structure of the template model with the skeleton structure of the 3D volume model. | 06-28-2012 |
20120163733 | APPARATUS AND METHOD FOR CREATING 3D CONTENT FOR ORIENTAL PAINTING - Disclosed herein are an apparatus and method for creating 3D content for an Oriental painting. The apparatus includes a 2D image analysis unit, a 3D information extraction unit, a content creation unit, and a 3D content conversion unit. The 2D image analysis unit receives previous knowledge information, and analyzes 2D information about at least one of an empty space, light and shading, and a composition of an image of the Oriental painting based on the previous knowledge information. The 3D information extraction unit extracts 3D information about at least one of a distance, a depth, a viewpoint, and a focus of the Oriental painting image. The content creation unit creates content for the Oriental painting image based on the analysis information and the 3D information. The 3D content conversion unit converts the content for the Oriental painting image into 3D content based on the 3D information. | 06-28-2012 |
20130301906 | APPARATUS AND METHOD FOR RECONSTRUCTING THREE DIMENSIONAL FACES BASED ON MULTIPLE CAMERAS - Disclosed herein are an apparatus and method for reconstructing a three-dimensional (3D) face based on multiple cameras. The apparatus includes a multi-image analysis unit, a texture image separation unit, a reconstruction image automatic synchronization unit, a 3D appearance reconstruction unit, and a texture processing unit. The multi-image analysis unit determines the resolution information of images received from a plurality of cameras, and determines whether the images have been synchronized with each other. The texture image separation unit separates a texture processing image by comparing the resolutions of the received images. The reconstruction image automatic synchronization unit synchronizes images that are determined to be asynchronous images by the multi-image analysis unit. The 3D appearance reconstruction unit computes the 3D coordinate values of the synchronized images, and reconstructs a 3D appearance image. The texture processing unit reconstructs a 3D image by mapping the texture processing image to the 3D appearance image. | 11-14-2013 |
20140168216 | 3D AVATAR OUTPUT DEVICE AND METHOD - A 3D avatar output device and method are disclosed. The 3D avatar output device of a vending machine type may include an input data receiving unit to receive input data including at least one of user information, a 3D avatar theme, and a 3D avatar output form; an image obtaining unit to obtain an image of a user through a camera included in the 3D avatar output device; a restoration model generation unit to generate a restoration model by extracting a facial area from the obtained image; a unique model generation unit to generate a unique model of the user based on the input data and the restoration model; and a 3D avatar output unit to generate a 3D avatar corresponding to the unique model and output the 3D avatar according to the 3D avatar output form. | 06-19-2014 |
Patent application number | Description | Published |
20120154393 | APPARATUS AND METHOD FOR CREATING ANIMATION BY CAPTURING MOVEMENTS OF NON-RIGID OBJECTS - Disclosed herein are an apparatus and method for creating animation by capturing the motions of a non-rigid object. The apparatus includes a geometry mesh reconstruction unit, a motion capture unit, and a content creation unit. The geometry mesh reconstruction unit receives moving images captured by a plurality of cameras, and generates a reconstruction mesh set for each frame. The motion capture unit generates mesh graph sets for the reconstruction mesh set and generates motion data, including motion information, using the mesh graph sets. The content creation unit creates three-dimensional (3D) content for a non-rigid object by generating a final transformation mesh set, having a topology similar to that of the reconstruction mesh set, using the motion data. | 06-21-2012 |
20140192045 | METHOD AND APPARATUS FOR GENERATING THREE-DIMENSIONAL CARICATURE USING SHAPE AND TEXTURE OF FACE - Provided is a method and apparatus for generating a three-dimensional (3D) caricature. The apparatus for generating a 3D caricature may include a 3D face data generation unit to generate 3D face data of a user corresponding to a shape and a texture of a face of the user, a 3D unique face model generation unit to generate a 3D unique face model using a shape and a texture of a unique face based on the 3D face data and a reference face, and a 3D caricature generation unit to generate a 3D caricature using the 3D unique face model and a caricature base face model. | 07-10-2014 |
20140204089 | METHOD AND APPARATUS FOR CREATING THREE-DIMENSIONAL MONTAGE - Disclosed is a method and apparatus for creating a three-dimensional (3D) montage. The apparatus for creating a 3D montage may include an image information extraction unit to extract image information from a face image to be reconstructed, using a face area based on statistical feature information and a feature vector, a 3D unique face reconstruction unit to reconstruct a 3D unique face model by fitting a 3D standard face model to face images of each view for the face image and feature information of each part for the face area, a 3D montage model generation unit to generate a 3D montage model by combining the reconstructed 3D unique face model with 3D face expression model information and 3D decoration model information, and a montage image generation unit to generate a montage image by projecting the generated 3D montage model from each view. | 07-24-2014 |
Patent application number | Description | Published |
20130057656 | SYSTEM AND METHOD FOR MANAGING FACE DATA - A system for managing face data includes a global face capturing unit configured to capture a global face image; and a global face data generation unit configured to obtain shape information and texture information of global face data, and generate the global face data. Further, the system includes a local face capturing unit configured to capture a plurality of local face images; and a global face posture extraction unit configured to estimate a position and a direction of the face of a captured user. Furthermore, the system includes a local capturing device posture extraction unit configured to extract posture information of the local face capturing unit; and a local face data generation unit configured to generate texture information and shape information, and generate local face data. | 03-07-2013 |
20150228081 | METHOD AND APPARATUS FOR RECONSTRUCTING 3D FACE WITH STEREO CAMERA - Provided is a method and apparatus for reconstructing a three-dimensional (3D) face based on a stereo camera, the method including: acquiring n images of a target by controlling a plurality of stereo cameras in response to an image acquirement request, wherein n denotes a natural number; extracting n face regions from the n images, respectively; and reconstructing a viewpoint-based face image based on the n face regions. | 08-13-2015 |
20150254502 | APPARATUS AND METHOD FOR CREATING THREE-DIMENSIONAL PERSONALIZED FIGURE - Disclosed herein is an apparatus and method for automatically creating a 3D personalized figure suitable for 3D printing by detecting a face area and features for respective regions from face data acquired by heterogeneous sensors and by optimizing global/local transformation. The 3D personalized figure creation apparatus acquires face data of a user corresponding to a reconstruction target; extracts feature points for respective regions from the face data, and reconstructs unique 3D models of the user's face, based on the extracted feature points; creates 3D figure models based on the unique 3D models and previously stored facial expression models and body/adornment models; and verifies whether each 3D figure model has a structure and a shape corresponding to actual 3D printing, corrects and edits the 3D figure model based on results of verification, and outputs a 3D figure model corresponding to 3D printing. | 09-10-2015 |