Seung-Beom
Seung Beom Baek, Icheon-Si KR
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20130171798 | METHOD OF MANUFACTURING PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE - A method of manufacturing a phase-change random access memory device. The method includes forming a word line on a semiconductor substrate, forming a switching element material and a hard mask material on the word line, etching the switching element material and the hard mask material to form a hole exposing the word line, forming an insulating material on a sidewall and a bottom of the hole, removing the hard mask material; and forming a heater material on the switching element material. The hard mask material has different etch selectivity from the insulating material. | 07-04-2013 |
20130228733 | RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the lower electrode, and an upper electrode formed on the switching unit. | 09-05-2013 |
Seung Beom Cho, Gyeonggi-Do KR
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20090291402 | FLAME STRUCTURE OF GAS BURNER - A fire hole part structure of a gas burner, which is constructed to be manufactured at a low cost, can improve flame stability, and can prevent incomplete combustion due to the length of flame. The structure is provided to a premixing ignition burner, which is installed to apply heat to a heat exchanger of a boiler, and includes fire hole pieces which are installed parallel to one another in mounting openings of a burner body, and each of which is defined with fire holes at regular intervals. An upper wall of at least one of the fire hole pieces is bent or curved to extend in at least two directions, and the fire holes are defined through respective surface portions of the upper wall, which extend in different directions, to face different directions. | 11-26-2009 |
Seung Beom Hong, Seoul KR
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20140330055 | METHOD AND APPARATUS FOR IMPROVING HEAT TRANSFER AND REACTION EFFICIENCY OF GAS HYDRATE REACTOR USING SCRAPER - The present invention relates to an apparatus comprising a reactor body to which gas and water are supplied to create a gas hydrate; an upper cover which is engaged to an upper portion of the reactor body, a scraper mounted rotationally within the reactor body, and a motor for providing a driving force to the scraper. It is possible to remove gas hydrate particles attached to at least one of an inner surface of the reactor body and an inner surface of the upper cover, by a rotary driving of the scraper. According to the invention, it is possible to prevent a material hindering a heat transfer by attaching on a wall surface of the reactor, through a process of scraping out gas hydrate particles, when the scraper which is rotationally driven about a center axis of the reactor is close to the inner surface of the reactor. | 11-06-2014 |
20140348720 | GAS-LIQUID CIRCULATING TYPE OF HYDRATE REACTOR - According to an embodiment of the present invention, a gas-liquid circulating type gas hydrate reactor, includes: a reactor body configured to be supplied with gas and water to generate a gas hydrate; and a bubble generator configured to be disposed around a lower portion of the reactor body, wherein the gas supplied from the lower portion of the reactor body is jetted into the reactor body through the bubble generator. | 11-27-2014 |
Seung Beom Jeong, Seoul KR
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20140211465 | LIGHTING MODULE - A lighting module may be provided that comprises: an optical plate; a base frame including a central frame disposed on the optical plate, a first frame coupled to the central frame, and a second frame coupled to the first frame; a side frame coupled between the optical plate and the second frame of the base frame; and a light source including a substrate disposed on the side frame and a light emitter disposed on the substrate, wherein the second frame is disposed on the light source, and wherein the second frame has an inner surface reflecting light from the light source to at least one of the first frame and the central frame. | 07-31-2014 |
20140246990 | LIGHTING DEVICE AND LIGHTING CONTROL METHOD - A lighting device may be provided that includes: a first to a fourth light emitting devices which are disposed on a substrate a first and a second pulse width modulation controllers which perform a pulse width modulation on currents applied to the first and the second light emitting devices respectively; and a first and a second controllers which control respectively currents applied to the third and the fourth light emitting devices having color temperatures different from those of the first and the second light emitting devices, wherein an (x, y) coordinate, which is determined by the mixture of the lights emitted from the first to the fourth light emitting devices and is located within a 1931 CIE chromaticity diagram, is moved onto a black body radiation curve within the 1931 CIE chromaticity diagram through the pulse width modulation of the first and the second pulse width modulation controllers and the control of the first and the second controllers. | 09-04-2014 |
Seung Beom Kim, Seoul KR
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20100241985 | Providing Virtual Keyboard - Apparatus and methods are described for providing a virtual keyboard. In one aspect, an apparatus for providing a virtual keyboard to be displayed on a touch screen is described. The apparatus includes a memory unit that includes a data repository to store data comprising at least one virtual keyboard configuration information to configure at least one corresponding virtual keyboard. The apparatus includes a processing module to select from the data stored in the data repository a given virtual keyboard configuration information to select a corresponding virtual keyboard to configure; configure the selected virtual keyboard to have a fan-like shape with multiple keys of the virtual keyboard arranged along an outline of an arc in a fan-shaped region based on the selected virtual keyboard configuration information; and instruct a touch screen module to display the configured virtual keyboard on a display region of a touch screen. | 09-23-2010 |
Seung Beom Park, Hwaseong-Si KR
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20140132896 | POLARIZER, LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - Provided are a liquid crystal display including a liquid crystal display panel comprising a first substrate and a liquid crystal layer, an upper polarizer disposed on the liquid crystal display, a lower polarizer disposed under the liquid crystal display, and a first phase delay layer located on the liquid crystal display panel, configured to compensate for a phase delay value in a thickness direction and comprising parylene. | 05-15-2014 |
20140139787 | POLARIZER AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME - A polarizer includes a reflective polarizer main body and an Rth compensation layer. The reflective polarizer main body includes a repetitively laminated structure, the repetitively laminated structure including two layers of different refractive indices repetitively disposed on one another. The Rth phase compensation layer is disposed at one side of the reflective polarizer main body. The Rth phase compensation layer is configured to compensate for a phase difference in an Rth direction. | 05-22-2014 |
20150036081 | POLARIZER AND DISPLAY PANEL HAVING THE SAME - A polarizer includes a base substrate, a polarization layer adhered to the base substrate and configured to polarize light incident from the base substrate, an infrared ray blocking layer disposed on the polarization layer and a buffer layer having a refractive index smaller than a refractive index of the infrared ray blocking layer. | 02-05-2015 |
20150070638 | LIQUID CRYSTAL DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display apparatus includes a first substrate, a second substrate disposed opposite to the first substrate, a liquid crystal layer and a phase difference compensation film disposed on the first substrate, where the phase difference compensation film includes a fluorine resin. | 03-12-2015 |
Seung Beom Park, Hwaseong-S KR
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20150022763 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes a first substrate and a second substrate facing each other. A color filter is positioned on the first substrate. A liquid crystal layer is interposed between the first substrate and the second substrate. A first polarizer is positioned on an outer surface of the first substrate. A first compensation film is positioned on an outer surface of the first polarizer. A second compensation film is positioned on an outer surface of the second substrate. A third compensation film is positioned on an outer surface of the second compensation film. A second polarizer is positioned on an outer surface of the third compensation film. The second compensation film includes a negative C-plate, and the third compensation film includes a biaxial film. | 01-22-2015 |
Seung Beom Ryu, Seoul KR
Seung Beom Seo, Yongin KR
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20100181588 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized. | 07-22-2010 |
Seung-Beom Ahn, Seoul KR
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20100094445 | METHOD FOR DESIGNING GLASS ANTENNA - The present invention features a technique comprising the design of a glass antenna having a desired performance regardless of the kind of vehicle and the glass size and the shape of vehicle, by operating an EM (engineering model) simulation tool with an optimization algorithm. | 04-15-2010 |
Seung-Beom Baek, Icheon KR
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20150085559 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - According to embodiments, a semiconductor memory may include: a variable resistance pattern disposed over a substrate and extended in a first direction; first and second structures including a plurality of interlayer dielectric layers and a plurality of conductive layers which are alternately stacked over the substrate, and contacted with one side surface and the other side surface of the variable resistance pattern, respectively, wherein the first stacked structure has a line shape extended in a first direction and the second stacked structure has a pillar shape; and a pillar-shaped conductive pattern contacted with one side surface of the second stacked structure, which is not contacted with the variable resistance pattern. | 03-26-2015 |
20150089087 | ELECTRONIC DEVICE - A semiconductor memory may include: a first stacked structure including a first word line disposed over a substrate and extended in a first direction, a first bit line disposed over the first word line and extended in a second direction crossing the first direction, and a first variable resistance layer interposed between the first word line and the first bit line; and a second stacked structure including a second bit line disposed over the first stacked structure and extended in the second direction, a second word line disposed over the second bit line and extended in the first direction, and a second variable resistance layer interposed between the second word line and the second bit line; and a first selecting element layer interposed between the first bit line and the second bit line. | 03-26-2015 |
Seung-Beom Cho, Yuseong-Gu KR
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20080236050 | Cerium oxide powder, method for preparing the same, and CMP slurry comprising the same - Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed. | 10-02-2008 |
20110070737 | METHOD FOR PREPARING OF CERIUM OXIDE POWDER FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR PREPARING OF CHEMICAL MECHANICAL POLISHING SLURRY USING THE SAME - The present invention relates to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same, and more particularly, to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same in which the specific surface area of the powder is increased by preparing a cerium precursor, and then decomposing and calcinating the prepared cerium precursor. The pore distribution is controlled to increase the chemical contact area between a polished film and a polishing material, thereby reducing polishing time while the physical strength of powder is decreased, which remarkably reduces scratches on a polished film. | 03-24-2011 |
20120187333 | ADJUVANT FOR CONTROLLING POLISHING SELECTIVITY AND CHEMICAL MECHANICAL POLISHING SLURRY COMPRISING THE SAME - Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte. | 07-26-2012 |
Seung-Beom Kang, Gyeonggi-Do KR
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20140312701 | POWER SUPPLY CIRCUIT IN ELECTRONIC DEVICE AND CONTROL METHOD THEREOF - A power supply circuit in an electronic device is provided. The power supply circuit includes a connector configured to receive external power and IDentifier (ID) data, a first switch disposed between the connector and a system of the electronic device, a second switch connected to the system, and a controller configured to control ON and OFF states of each of the first and second switches based on the ID data. | 10-23-2014 |
Seung-Beom Seo, Suwon-Si KR
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20090033224 | Plasma display panel and method of manufacturing the same - A plasma display panel and a method of manufacturing the plasma display panel are provided. The plasma display panel includes: a plurality of substrates including a first substrate and a second substrate disposed to face the first substrate; a plurality of barrier ribs disposed between the first substrate and the second substrate and defining a plurality of discharge spaces; a plurality of discharge electrodes disposed between the first substrate and the second substrate; phosphor layers formed in the discharge spaces; and an external light shield layer formed inside the substrates. | 02-05-2009 |
Seung-Beom Yi, Mission Viejo, CA US
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20140012372 | Apparatus For Treating A Mitral Valve - Embodiments of an apparatus for treating a deficient mitral valve include an expandable spacer configured for placement between the native leaflets of the mitral valve, the spacer anchorable to a wall of the ventricle. Methods and apparatus for delivering and implanting the prosthetic are also described. | 01-09-2014 |
20140012373 | Method for Implanting a Prosthetic Mitral Valve - Embodiments of a method for implanting a prosthetic valve at the native mitral valve region of the heart, the prosthetic valve including a main body that is radially compressible to a radially compressed state and self-expandable from the compressed state to a radially expanded state. The prosthetic apparatus also comprises at least one ventricular anchor coupled to the main body and disposed outside of the main body with a leaflet-receiving space between the anchor and an outer surface of the main body to receive a native valve leaflet. Apparatus for delivering and implanting the prosthetic valve are also described. | 01-09-2014 |
20140222136 | PROSTHETIC VALVE FOR REPLACING MITRAL VALVE - Embodiments of prosthetic valves for implantation within a native mitral valve are provided. One embodiment of a prosthetic valve includes a radially compressible main body and a one-way valve member. In some cases, the prosthetic valves also include ventricular anchors and/or an atrial portion coupled to and disposed outside of the main body. Methods, devices, and systems for delivering such prosthetic valves to the native mitral valve and implanting them therein are also provided. | 08-07-2014 |
Seung-Beom Yoon, Suwon-Si KR
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20080315289 | ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM) DEVICE AND METHODS OF FABRICATING THE SAME - An EEPROM device includes a device isolation layer disposed at a predetermined region of a semiconductor substrate to define active regions, a pair of control gates crossing the device isolation layers and an active region, a pair of selection gates interposed between the control gates to cross the device isolation layers and the active region and a floating gate and an intergate dielectric pattern stacked sequentially between the control gates and the active region The EEPROM device further includes a gate insulation layer of a memory transistor interposed between the floating gate and the active region and a tunnel insulation layer thinner than the gate insulation layer of the memory transistor and a gate insulation layer of a selection transistor interposed between the selection gates and the active region. The tunnel insulation layer is aligned at one side adjacent to the floating gate. | 12-25-2008 |
20080318406 | SPLIT GATE TYPE NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - In a split gate type nonvolatile memory device and a method of fabricating the same. A supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue of the presence of the supplementary layer pattern, it is therefore possible to increase an area of a region where a floating gate overlaps the source region and the supplementary layer pattern. Accordingly, the capacitance of a capacitor formed between the source and the floating gate increases so that it is possible for the nonvolatile memory device to perform program/erase operations at a low voltage level. | 12-25-2008 |
20090011589 | METHOD OF MANUFACTURING SPLIT GATE TYPE NONVOLATILE MEMORY DEVICE - A method of manufacturing a split gate type nonvolatile semiconductor memory device in which control gates are formed by a self aligning process. | 01-08-2009 |
20090141562 | NON-VOLATILE MEMORY DEVICE, METHODS OF FABRICATING AND OPERATING THE SAME - A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data. | 06-04-2009 |
20100289071 | NON-VOLATILE MEMORY DEVICE, METHODS OF FABRICATING AND OPERATING THE SAME - A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data. | 11-18-2010 |
20110175153 | Semiconductor Device Having Transistor with Vertical Gate Electrode and Method of Fabricating the Same - A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern. | 07-21-2011 |