Patent application number | Description | Published |
20150180087 | ELECTROLYTE FOR LITHIUM SECONDARY BATTERY AND LITHIUM SECONDARY BATTERY CONTAINING THE SAME - Provided are an electrolyte for a lithium secondary battery and a lithium secondary battery containing the same. | 06-25-2015 |
20150318573 | ELECTROLYTE FOR LITHIUM SECONDARY BATTERY, AND LITHIUM SECONDARY BATTERY COMPRISING SAME - Provided are an electrolyte for a lithium secondary battery which is not oxidized/decomposed when allowed to stand at a high temperature under high voltage, so as to inhibit generation of gas to prevent expansion of the battery, thereby reducing a battery thickness increase rate, and simultaneously having an excellent storage property at a high temperature, and a lithium secondary battery including the same. | 11-05-2015 |
20160072150 | Electrolyte for Lithium Secondary Battery and Lithium Secondary Battery Containing the Same - Provided are an electrolyte for a lithium secondary battery, and a lithium secondary battery containing the same. An embodiment of the present invention is directed to providing an electrolyte for a lithium secondary battery having excellent high-temperature and low-temperature characteristics while properly maintaining basic performance such as high rate charge and discharge characteristics, life cycle characteristics, and the like, and a lithium secondary battery containing the same. | 03-10-2016 |
20160079627 | Electrolyte for Lithium Secondary Battery and Lithium Secondary Battery Containing the Same - Provided are an electrolyte for a lithium secondary battery and a lithium secondary battery containing the same. The lithium secondary battery using the electrolyte for a lithium secondary battery according to the present invention has excellent high-temperature stability, high-temperature capacity recovery rate, low-temperature discharge capacity, and life cycle characteristics. | 03-17-2016 |
20160079628 | Electrolyte for Lithium Secondary Battery and Lithium Secondary Battery Containing the Same - Provided are an electrolyte for a lithium secondary battery, and a lithium secondary battery containing the same, wherein the electrolyte for a secondary battery has significantly excellent high-temperature stability, low-temperature discharge capacity, and life cycle characteristics. | 03-17-2016 |
20160087309 | Compound and Electrolyte of Lithium Secondary Battery Containing the Same - Provided are a novel compound, an electrolyte for a lithium secondary battery containing the same, and a lithium secondary battery containing the electrolyte for a lithium secondary battery according to the present invention. The electrolyte for a secondary battery according to the present invention may have significantly excellent high-temperature stability, low-temperature discharge capacity, and life cycle characteristics. | 03-24-2016 |
Patent application number | Description | Published |
20110138688 | FILM SHEET FOR AREA FOCUSING OF SUN LIGHT AND GREENHOUSE PROVIDED WITH THE SAME - A film sheet for area-focusing of sunlight and a greenhouse provided with the same are provided. A film sheet includes i) a film having a rectangular shape, and ii) a plurality of prism assemblies formed on one surface of the film to extend in one direction. At least one prism assembly of the plurality of prism assemblies includes i) at least one first prism unit including a plurality of first prisms with slanted angles that are substantially the same as each other, and ii) at least one second prism unit neighboring the first prism unit and including a plurality of second prisms with slanted angles that are substantially the same as each other. The width of the first prism unit is substantially the same as the width of the second prism unit and a slanted angle of one first prism among the plurality of first prisms is different from a slanted angle of one second prism among the plurality of second prisms, and light entering the prism assembly is configured to be area-focused. | 06-16-2011 |
20110188189 | FLEXIBLE ELECTRONIC PRODUCT HAVING A SHAPE CHANGE CHARACTERISTIC AND METHOD THEREOF - A flexible electronic product includes a flexible electronic assembled body and an actuator including a shape memory member. The actuator of the flexible electronic product deforms in response to an input. The flexible electronic assembled body includes a flexible display device, such as an organic light emitting diode (OLED), a plastic liquid crystal display (LCD), a plastic plasma display panel (PDP), an electronic ink panel, an organic thin film transistor (OTFT). | 08-04-2011 |
20120092370 | APPARATUS AND METHOD FOR AMALGAMATING MARKERS AND MARKERLESS OBJECTS - An apparatus to provide AR includes a marker recognition unit to recognize objects in reality information, an amalgamation determining unit to determine whether the objects are amalgamated, an amalgamation processing unit to determine an attribute of each of the recognized objects and to generate an amalgamated object based on the determined attributes, and an object processing unit to map the amalgamated object to the reality information and to display the mapped amalgamated object. A method for amalgamating objects in AR includes recognizing objects in reality information, determining whether the objects are amalgamated, determining an attribute of each of the recognized objects, generating an amalgamated object based on the determined attribute, mapping the amalgamated object to the reality information, and displaying the mapped amalgamated object. | 04-19-2012 |
20120143431 | DIAGNOSTIC APPARATUS USING A MICROPHONE - The present invention provides a diagnostic apparatus using a microphone. More specifically, the diagnostic apparatus utilizes a first microphone, a second microphone, a first unit, a controller and second unit. The first microphone is positioned within an engine compartment and the second microphone is positioned within an interior of a vehicle to receive the noise. The second unit records the noise inputted through the first microphone or the second microphone or both and the controller analyzes and diagnoses a vehicle utilizing the noise recorded by the first unit to determine if a failure in the vehicle has occurred. When a vehicle failure is detected by the controller, the second unit then notifies a user of the location of a failed part in the vehicle. | 06-07-2012 |
20130135758 | CONCENTRATION-RATIO CONTROLLABLE SYSTEM IN THE SOLAR SIMULATOR FOR THE CONCENTRATE TYPE SOLAR CELLS - Provided is a concentration ratio controlling apparatus for concentration type solar cells that may adjust an opened area by mounting, to a lower portion of a solar simulator, a concentration ratio controlling apparatus combined with an adjustment unit capable of controlling the opened area and thereby adjusting the adjustment unit, and as a result, may adjust the quantity of light, that is, a concentration ratio, that is irradiated toward the surface of a solar cell disposed below a condenser by varying the quantity of light incident through a Fresnel lens disposed in a lower portion of the condenser. | 05-30-2013 |
20130214411 | METAL INTERCONNECT OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a method of manufacturing a metal interconnect of a semiconductor device including: forming a interconnect hole by patterning an interlayer insulating film formed on a substrate; performing a nitriding treatment on a surface of the interlayer insulating film by injecting a gas including nitrogen into a deposition apparatus in which the substrate is disposed; forming a diffusion preventing film by injecting the gas including nitrogen and a metal source gas into the deposition apparatus together; filling the interconnect hole with a metal; and removing the metal formed on a part other than the interconnect hole by a chemical mechanical polishing (CMP) process. Accordingly, the mechanical strength of the interlayer insulating film is increased, thereby preventing scratches or defects that are generated during the chemical mechanical polishing process. | 08-22-2013 |
Patent application number | Description | Published |
20110133843 | POWER AMPLIFIER DEVICE - Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors. | 06-09-2011 |
20110140825 | INDUCTOR - Provided is an inductor. The inductor includes a first to a fourth conductive terminals formed in one direction within a semiconductor substrate, a first conductive line formed on one side of the semiconductor substrate and electrically connected to the second and third conductive terminals interiorly positioned among the first to fourth conductive terminals, a second conductive line formed on the one side of the semiconductor substrate and electrically connected to the first and fourth conductive terminals exteriorly positioned among the first to fourth conductive terminals, and a third conductive line formed on the other side of the semiconductor substrate and electrically connected to the first and third conductive terminals among the first to fourth conductive terminals. | 06-16-2011 |
20120098099 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a compound semiconductor device and a method of manufacturing the same. The semiconductor device includes: a substrate including a first region and a second region; a transistor including first to third conductive impurity layers stacked on the substrate of the first region; and a variable capacitance diode spaced apart from the transistor of the first region and including the first and second conductive impurity layers stacked on the substrate of the second region. | 04-26-2012 |
20130134554 | VERTICAL CAPACITORS AND METHODS OF FORMING THE SAME - Provided are vertical capacitors and methods of forming the same. The formation of the vertical capacitor may include forming input and output electrodes on a top surface of a substrate, etching a bottom surface of the substrate to form via electrodes, and then, forming a dielectric layer between the via electrodes. As a result, a vertical capacitor with high capacitance can be provided in a small region of the substrate. | 05-30-2013 |
20130169365 | AUTOMATIC GAIN CONTROL FEEDBACK AMPLIFIER - Disclosed is an automatic gain control feedback amplifier that can arbitrarily control a gain even when a difference in input signal is large. The automatic gain control feedback amplifier includes: an amplification circuit unit configured to amplify voltage input from an input terminal and output the amplified voltage to an output terminal; a feedback circuit unit connected between the input terminal and the output terminal and including a feedback resistor unit of which a total resistance value is determined by one or more control signals and a feedback transistor connected to the feedback resistor unit in parallel; and a bias circuit unit configured to supply predetermined bias voltage to the feedback transistor. | 07-04-2013 |
20130187197 | HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF - Disclosed is a manufacturing method of a high electron mobility transistor. The method includes: forming a source electrode and a drain electrode on a substrate; forming a first insulating film having a first opening on an entire surface of the substrate, the first opening exposing a part of the substrate; forming a second insulating film having a second opening within the first opening, the second opening exposing a part of the substrate; forming a third insulating film having a third opening within the second opening, the third opening exposing a part of the substrate; etching a part of the first insulating film, the second insulating film and the third insulating film so as to expose the source electrode and the drain electrode; and forming a T-gate electrode on a support structure including the first insulating film, the second insulating film and the third insulating film. | 07-25-2013 |
20130207730 | IMPEDANCE MATCHING CIRCUIT, POWER AMPLIFIER AND MANUFACTURING METHOD FOR VARIABLE CAPACITOR - Disclosed is an impedance matching circuit capable of wideband matching. The impedance matching circuit includes: a first variable inductor unit of which one end is connected to the first node and an inductance value varies; a second inductor unit connected between the first node and a second node and having a variable inductance value; a first variable capacitor unit of which one end is connected to the first node and a capacitance value varies; and a second variable capacitor unit of which one end is connected to the second node and a capacitance value varies, and the other end of the first variable capacitor unit and the other end of the second variable capacitor unit are connected to a ground voltage terminal to perform the impedance matching between a circuit connected to the other end of the first variable inductor unit and a circuit connected to the second node. | 08-15-2013 |
20140017885 | METHOD OF MANUFACTURING FIELD EFFECT TYPE COMPOUND SEMICONDUCTOR DEVICE - Disclosed is a method of manufacturing a field effect type compound semiconductor device in which leakage current of a device is decreased and breakdown voltage is enhanced. The method of manufacturing a field effect type compound semiconductor device includes: stacking an active layer and an ohmic layer on a substrate and forming a first oxide layer on the ohmic layer; forming a mesa region in predetermined regions of the first oxide layer, the ohmic layer, and the active layer; planarizing the mesa region after forming a nitride layer by evaporating a nitride on the mesa region; forming an ohmic electrode on the first oxide layer; forming a minute gate resist pattern after forming a second oxide layer on a semiconductor substrate in which the ohmic electrode is formed and forming a minute gate pattern having a under-cut shaped profile by dry-etching the first oxide layer, the nitride layer, and the second oxide layer; forming a gate recess region by forming a head pattern of a gamma gate electrode on the semiconductor substrate; and forming the gamma gate electrode by evaporating refractory metal on the semiconductor substrate in which the gate recess region is formed. | 01-16-2014 |
20140160689 | PACKAGE - A package includes a ground plate, a chip mounting plate disposed at a side of the ground plate and having a top surface lower than a top surface of the ground plate, a chip on the chip mounting plate, a first input/output terminal opposite to the chip mounting plate and disposed at another side of the ground plate, and a second input/output terminal opposite to the ground plate and disposed at a side of the chip mounting plate. The first and second input/output terminals are electrically connected to the chip. | 06-12-2014 |
20140167175 | TRANSISTOR AND METHOD OF FABRICATING THE SAME - A field effect transistor is provided. The transistor may include a source electrode and a drain electrode provided spaced apart from each other on a substrate and a ‘+’-shaped gate electrode provided on a portion of the substrate located between the source and drain electrodes. | 06-19-2014 |
20140167806 | SEMICONDUCTOR DEVICE TESTING APPARATUS - Provided is a semiconductor device testing apparatus including a first socket configured to load a package, on which a semiconductor device to be tested may be mounted, and a second socket coupled to the first socket. The first socket may include an upper part including a hole configured to accommodate the package and a terminal pad provided at both side edges of the hole to hold input and output terminals of the package, and a lower part including a heating room, in which a heater and a temperature sensing part may be provided, the heater being configured to heat the semiconductor device and the temperature sensing part being configured to measure temperature of the semiconductor device. The second socket may include a probe card with a pattern that may be configured to receive test signals from an external power source. | 06-19-2014 |
20140184333 | FEEDBACK AMPLIFIER - Provided is a feedback amplifier. The feedback amplifier includes: an amplification circuit unit amplifying a bust packet signal inputted from an input terminal and outputting the amplified voltage to an output terminal; a feedback circuit unit disposed between the input terminal and the output terminal and controlling whether to apply a fixed resistance value to a signal outputted to the output terminal; a packet signal detection unit detecting a peak value of a bust packet signal from the output terminal and controlling whether to apply the fixed resistance value; and a bias circuit unit generating a bias voltage, wherein the feedback circuit unit determines a feedback resistance value to change the fixed resistance value in response to at least one control signal and adjusts a gain by receiving the bias voltage. | 07-03-2014 |
20150087142 | HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF - Disclosed is a manufacturing method of a high electron mobility transistor. The method includes: forming a source electrode and a drain electrode on a substrate; forming a first insulating film having a first opening on an entire surface of the substrate, the first opening exposing a part of the substrate; forming a second insulating film having a second opening within the first opening, the second opening exposing a part of the substrate; forming a third insulating film having a third opening within the second opening, the third opening exposing a part of the substrate; etching a part of the first insulating film, the second insulating film and the third insulating film so as to expose the source electrode and the drain electrode; and forming a T-gate electrode on a support structure including the first insulating film, the second insulating film and the third insulating film. | 03-26-2015 |
20150194494 | FIELD-EFFECT TRANSISTOR FOR HIGH VOLTAGE DRIVING AND MANUFACTURING METHOD THEREOF - Disclosed are a field effect transistor for high voltage driving including a gate electrode structure in which a gate head extended in a direction of a drain is supported by a field plate embedded under a region of the gate head so as to achieve high voltage driving, and a manufacturing method thereof. Accordingly, the gate head extended in the direction of the drain is supported by the field plate electrically spaced by using an insulating layer, so that it is possible to stably manufacture a gate electrode including the extended gate head, and gate resistance is decreased by the gate head extended in the direction of the drain and an electric field peak value between the gate and the drain is decreased by the gate electrode including the gate head extended in the direction of the drain and the field plate proximate to the gate, thereby achieving an effect in that a breakdown voltage of a device is increased. | 07-09-2015 |
20150236108 | SEMICONDUCTOR DEVICE HAVING STABLE GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a semiconductor device having a stable gate structure, and a manufacturing method thereof, in which a gate structure is stabilized by additionally including a plurality of gate feet under a gate head in a width direction of the gate head so as to serve as supporters in a gate structure including a fine gate foot having a length of 0.2 μm or smaller, and the gate head having a predetermined size. Accordingly, it is possible to prevent the gate electrode of the semiconductor device from collapsing, and improve reliability of the semiconductor device during or after the process of the semiconductor device. | 08-20-2015 |
20150270822 | COMPONENT PACKAGE INCLUDING MATCHING CIRCUIT AND MATCHING METHOD THEREOF - Provided herein is a component package including a matching unit and a matching method thereof, the matching unit including: a substrate; a transmission line formed on the substrate, the transmission line being connected to a terminal of the component package; a bonding wire electrically connecting the transmission line and a central component; and a capacitor unit having a plurality of capacitors electrically connected with the transmission line by wiring connection, wherein an inductance of the matching unit is variable by adjusting a length of the bonding wire, and a capacitance of the matching unit is variable by increasing or reducing the number of capacitors electrically connected to the transmission line, of among the capacitors inside the capacitor unit, by extending or cutting off the wiring connection. | 09-24-2015 |
20150349736 | FEEDBACK AMPLIFIER - Provided herein is a feedback amplifier including an amplifier circuit configured to amplify an input signal input from an input terminal and output the amplified input signal to an output terminal; a feedback circuit configured to apply a feedback resistance value to a signal output to the output terminal, and to control a gain of the amplifier circuit by adjusting the input signal by a bias voltage applied with a feedback resistance value determined; a packet signal sensor configured to generate a fixed resistance control signal for controlling a fixed resistance value included in the feedback resistance value through a comparison between the output from the output terminal with a minimum signal level; and a fixed resistance controller configured to control the fixed resistance value included in the feedback resistance value in response to the fixed resistance control signal. | 12-03-2015 |
20150380482 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - Provided herein is a semiconductor device including a substrate; an active layer formed on top of the substrate; a protective layer formed on top of the active layer and having a first aperture; a source electrode, driving gate electrode and drain electrode formed on top of the protective layer; and a first additional gate electrode formed on top of the first aperture, wherein an electric field is applied to the active layer, protective layer and driving gate electrode due to a voltage applied to each of the source electrode, drain electrode and driving gate electrode, and the first additional gate electrode is configured to attenuate a size of the electric field applied to at least a portion of the active layer, protective layer and driving gate electrode. | 12-31-2015 |