Patent application number | Description | Published |
20120147447 | Electrochromic device and method of manufacturing the same - Disclosed is an electrochromic device that includes a first electrode and a second electrode facing each other, an electrochromic layer between the first electrode and the second electrode, and an electrolyte between the first electrode and the second electrode and being in contact with the electrochromic layer. The electrochromic layer may include a plurality of oxide semiconductor particles, a metal oxide on the surface of the oxide semiconductor particles, and an electrochromic material. An energy bandgap of the oxide semiconductor particles is in a range of about 3 eV to about 5 eV and an energy bandgap of the metal oxide is in a range of about 3 eV to about 5 eV, and a difference of conduction band energy levels of the oxide semiconductor particles and the metal oxide is about 0.5 eV or less. A method of manufacturing the electrochromic device may also be provided. | 06-14-2012 |
20120154890 | Ink for electrochromic device and electrochromic device and method of manufacturing the same - Disclosed is ink for an electrochromic device including an electrochromic material, a metal salt, and a solvent. Disclosed also is an electrochromic device that includes a first electrode and a second electrode facing each other, an auxiliary electrode disposed on the first electrode or the second electrode, an electrochromic layer applied on the auxiliary electrode, and an electrolyte interposed between the first electrode and second electrode, wherein the electrochromic layer is formed using ink including an electrochromic material and a metal salt. Disclosed also is a method of manufacturing the electrochromic device. | 06-21-2012 |
20130062595 | PHOTODIODE - A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode. | 03-14-2013 |
20130105768 | PHOTODIODE | 05-02-2013 |
20130112947 | ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR - An organic photoelectric device may include an anode and a cathode configured to face each other, and an active layer between the anode and cathode, wherein the active layer includes a quinacridone derivative and a thiophene derivative having a cyanovinyl group. | 05-09-2013 |
20140070183 | ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR - An organic photoelectric device includes a first electrode, a metal nanolayer contacting one side of the first electrode, an active layer on one side of the metal nanolayer, and a second electrode on one side of the active layer. An image sensor includes the organic photoelectric device. | 03-13-2014 |
20140070189 | LIGHT TRANSMISSIVE ELECTRODE, ORGANIC PHOTOELECTRIC DEVICE, AND IMAGE SENSOR - According to example embodiments, a transmissive electrode may include a light transmission layer. The light transmission layer may include a metal and a metal oxide that is included in a smaller amount than the metal. According to example embodiments, an organic photoelectric device, as well as an image sensor, may include the transmissive electrode. | 03-13-2014 |
20140097416 | ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR - An organic photoelectric device may include a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, the active layer including a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2. An image sensor may include the organic photoelectric device. | 04-10-2014 |
20140117321 | ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR INCLUDING THE SAME - An organic photoelectric device may include an anode and a cathode facing each other and the active layer between the anode and cathode, wherein the active layer includes a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2. Chemical Formula 1 and Chemical Formula 2 are the same as in the detailed description. | 05-01-2014 |
20140239271 | PHOTOELECTRONIC DEVICE AND IMAGE SENSOR - A photoelectronic device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the active layer, the auxiliary layer including a first auxiliary layer including a metal oxide and a metal and a second auxiliary layer including a first organic material having a HOMO energy level of greater than or equal to about 6.0 eV. | 08-28-2014 |
20140239278 | PHOTOELECTRONIC DEVICE AND IMAGE SENSOR - Disclosed are a photoelectronic device including a first electrode including a first metal; an active layer disposed between the first electrode and a second electrode; and a diffusion barrier layer disposed between the first electrode and the active layer; the diffusion barrier layer including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode and the diffusion barrier layer are configured to transmit light, and an image sensor including the photoelectronic device. | 08-28-2014 |