Patent application number | Description | Published |
20120306082 | SEMICONDUCTOR DEVICE AND STRUCTURE FOR HEAT REMOVAL - A device, including: a first layer of first transistors, overlaid by at least one interconnection layer, wherein the interconnection layer includes metals such as copper or aluminum; a second layer including second transistors, the second layer overlaying the interconnection layer, wherein the second layer is less than about 0.4 micron thick; and a connection path connecting the second transistors to the interconnection layer, wherein the connection path includes at least one through-layer via, and the through-layer via includes material whose co-efficient of thermal expansion is within about 50 percent of the second layer coefficient of thermal expansion. | 12-06-2012 |
20130020707 | NOVEL SEMICONDUCTOR SYSTEM AND DEVICE - A 3D IC based system including: a first semiconductor layer including first alignment marks and first transistors, wherein the first transistors are interconnected by at least one metal layer including aluminum or copper; a second mono-crystallized semiconductor layer including second transistors and overlaying the at least one metal layer, wherein the at least one metal layer is in-between the first semiconductor layer and the second mono-crystallized semiconductor layer; and wherein the second transistors include a plurality of N-type transistors and P-type transistors, and wherein the second mono-crystallized semiconductor layer is transferred from a reusable donor wafer. | 01-24-2013 |
20130083589 | NOVEL SEMICONDUCTOR DEVICE AND STRUCTURE - A semiconductor device, including: a first semiconductor layer including first transistors, wherein the first transistors are interconnected by at least one metal layer including aluminum or copper; and a second mono-crystallized semiconductor layer including second transistors and overlaying the at least one metal layer, wherein the at least one metal layer is in-between the first semiconductor layer and the second mono-crystallized semiconductor layer, wherein the second mono-crystallized semiconductor layer is less than 100 nm in thickness, and wherein the second transistors include horizontally oriented transistors. | 04-04-2013 |
20130122672 | SEMICONDUCTOR DEVICE AND STRUCTURE - A method for formation of a semiconductor device including a first wafer including a first single crystal layer comprising first transistors and first alignment mark, the method including: implanting to form a doped layer within a second wafer; forming a second mono-crystalline layer on top of the first wafer by transferring at least a portion of the doped layer using layer transfer step, and completing the formation of second transistors on the second mono-crystalline layer including a step of forming a gate dielectric followed by second transistors gate formation step, wherein the second transistors are horizontally oriented. | 05-16-2013 |
20140145272 | NOVEL SEMICONDUCTOR DEVICE AND STRUCTURE - A semiconductor device including: a first single crystal layer including first transistors, first alignment mark, and at least one metal layer, the at least one metal layer overlying the first single crystal layer and includes copper or aluminum; and a second layer overlying the metal layer; the second layer includes second transistors which include mono-crystal and are aligned to the first alignment mark with less than 40 nm alignment error, the mono-crystal includes a first region and second region which are horizontally oriented with respect to each other, the first region has substantially different dopant concentration than the second region. | 05-29-2014 |
20150311142 | SEMICONDUCTOR SYSTEM, DEVICE AND STRUCTURE WITH HEAT REMOVAL - A 3D device including: a first layer including first transistors, the first layer overlaid by at least one interconnection layer; a second layer including second transistors, the second layer overlaying the interconnection layer; a plurality of electrical connections connecting the second transistors with the interconnection layer; and at least one thermally conductive and electrically non-conductive contact, where the at least one thermally conductive and electrically non-conductive contact thermally connects the second layer to a top or bottom surface of the 3D device. | 10-29-2015 |
Patent application number | Description | Published |
20110227020 | BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS - In a first aspect, a metal-insulator-metal (MIM) stack is provided that includes (1) a first conductive layer comprising a silicon-germanium (SiGe) alloy; (2) a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer; and (3) a second conductive layer formed above the resistivity-switching layer. A memory cell may be formed from the MIM stack. Numerous other aspects are provided. | 09-22-2011 |
20110227028 | BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS - In a first aspect, an MIM stack is provided that includes (1) a first conductive layer comprising a first metal-silicide layer and a second metal-silicide layer; (2) a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer; and (3) a second conductive layer formed above the resistivity-switching layer. A memory cell may be formed from the MIM stack. Numerous other aspects are provided. | 09-22-2011 |
20130126821 | BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS - In a first aspect, a metal-insulator-metal (“MIM”) stack is provided that includes a first conductive layer, a resistivity-switching layer having a metal oxide layer formed above the first conductive layer, a material layer between the first conductive layer and the resistivity-switching layer, and a second conductive layer above the resistivity-switching layer. The first conductive layer includes a multi-layer metal-silicide stack, and the material layer has a Gibbs free energy of formation per O between about −3 and −6 eV. A memory cell may be formed from the MIM stack. Numerous other aspects are provided. | 05-23-2013 |
20140153310 | CONTENT ADDRESSABLE MEMORY - A content addressable memory can include an array of memory cells having multiple memory elements, such as RRAM elements, to store data based on a plurality resistive states. A common switching device, such as a transistor, can electrically couple a plurality of the multiple memory elements with a matchline during read, write, erase, and search operations. In search operations, the memory cells can receive a search word and selectively discharge a voltage level on the matchline based on the data stored by the memory elements and the search word provided to the memory elements. The voltage level of the matchline can indicate whether the search word matched the data stored in the memory cells. The content addressable memory can potentially have an effective memory cell sizing under 0.5F | 06-05-2014 |
20140269006 | FAST READ SPEED MEMORY DEVICE - A memory device includes an array of resistive memory cells. Each resistive memory cell in the array includes a first resistive memory element, a second resistive memory element electrically coupled with the first resistive memory element at a common node between a first terminal of the first resistive memory element and a first terminal of the second resistive memory element, and a transistor comprising a gate electrically coupled with the common node. | 09-18-2014 |
20150162382 | 1D-2R MEMORY ARCHITECTURE - A memory device includes an array of resistive memory cells. Each resistive memory cell in the array includes a first resistive memory element, a second resistive memory element, and a two-terminal switching element. The first resistive memory element is electrically coupled to the second resistive memory element and to the switching element at a common node. | 06-11-2015 |
Patent application number | Description | Published |
20090097319 | APPLYING ADAPTIVE BODY BIAS TO NON-VOLATILE STORAGE BASED ON NUMBER OF PROGRAMMING CYCLES - Body bias can be applied to optimize performance in a non-volatile storage system. Body bias can be set in an adaptive manner to reduce an error count of an error correcting and/or detecting code when reading data from non-volatile storage elements. Also, a body bias level can be increased or decreased as a number of programming cycles increases. Also, body bias levels can be set and applied separately for a chip, plane, block and/or page. A body bias can be applied to a first set of NAND strings for which operations are being performed by controlling a first voltage provided to a source side of the first set of NAND strings and a second voltage provided to a p-well. A source side of a second set of NAND strings for which operations are not being performed is floated or receives a fixed voltage. | 04-16-2009 |
20100195398 | APPLYING DIFFERENT BODY BIAS TO DIFFERENT SUBSTRATE PORTIONS FOR NON-VOLATILE STORAGE - Body bias can be applied to optimize performance in a non-volatile storage system. Body bias can be set in an adaptive manner to reduce an error count of an error correcting and/or detecting code when reading data from non-volatile storage elements. Also, a body bias level can be increased or decreased as a number of programming cycles increases. Also, body bias levels can be set and applied separately for a chip, plane, block and/or page. A body bias can be applied to a first set of NAND strings for which operations are being performed by controlling a first voltage provided to a source side of the first set of NAND strings and a second voltage provided to a p-well. A source side of a second set of NAND strings for which operations are not being performed is floated or receives a fixed voltage. | 08-05-2010 |
20110267887 | Reducing Energy Consumption When Applying Body Bias To Substrate Having Sets Of Nand Strings - Body bias can be applied to optimize performance in a non-volatile storage system. Body bias can be set in an adaptive manner to reduce an error count of an error correcting and/or detecting code when reading data from non-volatile storage elements. Also, a body bias level can be increased or decreased as a number of programming cycles increases. Also, body bias levels can be set and applied separately for a chip, plane, block and/or page. A body bias can be applied to a first set of NAND strings for which operations are being performed by controlling a first voltage provided to a source side of the first set of NAND strings and a second voltage provided to a p-well. A source side of a second set of NAND strings for which operations are not being performed is floated or receives a fixed voltage. | 11-03-2011 |
Patent application number | Description | Published |
20120225033 | Biodegradable Drug Delivery Composition - The present disclosure provides a biodegradable drug delivery composition including a vehicle and an insoluble component comprising beneficial agent dispersed in the vehicle. Typically, the composition is not an emulsion, but has a low viscosity and further provides for minimized initial burst and sustained release of the beneficial agent over time. Also provided, are kits including the biodegradable drug delivery composition or components thereof, as well as methods of making and using the biodegradable drug delivery composition. | 09-06-2012 |
20130259907 | Biodegradable Drug Delivery Composition - The present disclosure provides a biodegradable drug delivery composition including a vehicle and an insoluble component comprising beneficial agent dispersed in the vehicle. Typically, the composition is not an emulsion, but has a low viscosity and further provides for minimized initial burst and sustained release of the beneficial agent over time. Also provided, are kits including the biodegradable drug delivery composition or components thereof, as well as methods of making and using the biodegradable drug delivery composition. | 10-03-2013 |
20140193365 | Biodegradable Drug Delivery Composition - The present disclosure provides a biodegradable drug delivery composition including a vehicle and an insoluble component comprising beneficial agent dispersed in the vehicle. Typically, the composition is not an emulsion, but has a low viscosity and further provides for minimized initial burst and sustained release of the beneficial agent over time. Also provided, are kits including the biodegradable drug delivery composition or components thereof, as well as methods of making and using the biodegradable drug delivery composition. | 07-10-2014 |
20140294977 | Radiation-Sterilized Biodegradable Drug Delivery Composition - The present disclosure is directed to a method of making a composition by combining a vehicle, e.g., a single phase vehicle, and an insoluble component comprising a beneficial agent, and sterilizing the composition using ionizing radiation prior to use, wherein the beneficial agent is stable following exposure to a sterilizing dose of ionizing radiation. Related compositions and methods are provided. | 10-02-2014 |
Patent application number | Description | Published |
20080250529 | Ubiquitin regulatory nucleic acids, vectors, and methods of using same - The invention is directed to a soybean polyubiquitin promoter, polyubiquitin terminator, sequences which hybridize to same and functional fragments thereof. The regulatory element of the invention provide improved expression in plants of operably linked nucleotide sequences. Expression vectors with the regulatory element is the subject of the invention, which may further include an operably linked nucleotide sequence. The invention is further directed to transformed plant tissue including the nucleotide sequence and to transformed plants and seeds thereof. The regulatory element is useful for driving a nucleotide sequence, for example a gene, or antisense expression or the like for the purpose of imparting agronomically useful traits such as, but not limited to, increase in yield, disease resistance, insect resistance, herbicide tolerance, drought tolerance and salt tolerance in plants. | 10-09-2008 |
20090111186 | PROMOTER AND VECTORS FOR PLANT TRANSFORMATION AND METHODS OF USING SAME - The invention is directed to a promoter, designated MuB, sequences which hybridize to same and functional fragments thereof. The regulatory element of the invention provide improved expression in plants of operably linked nucleotide sequences. Expression vectors with the regulatory element is the subject of the invention, which may further include an operably linked nucleotide sequence. The invention is further directed to transformed plant tissue including the nucleotide sequence and to transformed plants and seeds thereof. The regulatory element is useful for driving gene or antisense expression or the like for the purpose of imparting agronomically useful traits such as, but not limited to, increase in yield, disease resistance, insect resistance, herbicide tolerance, drought tolerance and salt tolerance in plants. | 04-30-2009 |
20090220999 | Antibodies immunoreactive with mutant 5-enolpyruvlshikimate-3-phosphate synthase - Antibodies immunoreactive to double mutant EPSPS are provided, and in an embodiment the double mutant EPSPS is one in which the wild-type EPSPS is substituted at residue 102 with isoleucine and at residue 106 with serine. Also provided are hybridomas producing the antibodies, as well as methods of making and using the antibodies. | 09-03-2009 |
20100199377 | Ubiquitin regulatory nucleic acids, vectors, and methods of using same - The invention is directed to a soybean polyubiquitin promoter, polyubiquitin terminator, sequences which hybridize to same and functional fragments thereof. The regulatory element of the invention provide improved expression in plants of operably linked nucleotide sequences. Expression vectors with the regulatory element is the subject of the invention, which may further include an operably linked nucleotide sequence. The invention is further directed to transformed plant tissue including the nucleotide sequence and to transformed plants and seeds thereof. The regulatory element is useful for driving a nucleotide sequence, for example a gene, or antisense expression or the like for the purpose of imparting agronomically useful traits such as, but not limited to, increase in yield, disease resistance, insect resistance, herbicide tolerance, drought tolerance and salt tolerance in plants. | 08-05-2010 |
20110104755 | Antibodies immunoreactive with mutant hydroxypenylpyruvatedioxygenase - Antibodies immunoreactive to mutant | 05-05-2011 |
20120144530 | Optimized expression of glyphosate resistance encoding nucleic acid molecules in plant cells - A nucleic acid molecule encoding a 5-enolpyruvyl-3-phosphoshikimic acid synthase (EPSPS) that provides resistance to glyphosate is provided, that has been optimized for expression in both monocotyledonous and dicotyledonous plants and preferably in soybeans. Methods of use are also provided. | 06-07-2012 |
20120240291 | Regulatory regions preferentially expressing in non-pollen plant tissue - Regulatory regions are shown which regulate expression of an operably linked heterologous nucleic acid molecule in plants. Promoters are described which express at lower levels in pollen cells that in other plant cells. Methods of using such promoter to regulate expression of an operably linked nucleic acid molecule are described. A polyadenylation nucleotide sequence from soybean is further shown. | 09-20-2012 |
20130055453 | STACKED HERBICIDE TOLERANCE EVENT 8264.42.32.1, RELATED TRANSGENIC SOYBEAN LINES, AND DETECTION THEREOF - This invention relates to soybean event pDAB8264.42.32.1 and includes novel expression cassettes and transgenic inserts comprising multiple traits conferring resistance to glyphosate, aryloxyalkanoate, and glufosinate herbicides. This invention also relates in part to methods of controlling resistant weeds, plant breeding and herbicide tolerant plants. In some embodiments, the event sequence can be “stacked” with other traits, including, for example, other herbicide tolerance gene(s) and/or insect-inhibitory proteins. This invention further relates in part to endpoint TAQMAN PCR assays for the detection of Event pDAB8264.42.32.1 in soybeans and related plant material. Some embodiments can perform high throughput zygosity analysis of plant material and other embodiments can be used to uniquely identify the zygosity of and breed soybean lines comprising the event of the subject invention. Kits and conditions useful in conducting these assays are also provided. | 02-28-2013 |
20130338006 | STACKED HERBICIDE TOLERANCE EVENT 8291.45.36.2, RELATED TRANSGENIC SOYBEAN LINES, AND DETECTION THEREOF - This invention relates to soybean event pDAB8291.45.36.2, which includes a novel expression cassette comprising multiple traits conferring resistance to glyphosate, aryloxyalkanoate, and glufosinate herbicides. This invention also relates in part to methods of controlling resistant weeds, plant breeding, and herbicide tolerant plants. In some embodiments, the event sequence can be “stacked” with other traits, including, for example, other herbicide tolerance gene(s) and/or insect-inhibitory proteins. This invention further relates in part to detection methods, including endpoint TaqMan PCR assays, for the detection of Event pDAB8291.45.36.2 in soybeans and related plant material. Some embodiments can perform high throughput zygosity analysis of plant material and other embodiments can be used to uniquely identify the zygosity of and breed soybean lines comprising the event of the subject invention. Kits and conditions useful in conducting these assays are also provided. | 12-19-2013 |
20140041083 | STACKED HERBICIDE TOLERANCE EVENT 8264.44.06.1, RELATED TRANSGENIC SOYBEAN LINES, AND DETECTION THEREOF - This invention relates in part to soybean event pDAB8264.44.06.1 and includes a novel expression cassettes and transgenic inserts comprising multiple traits conferring resistance to glyphosate, aryloxyalkanoate, and glufosinate herbicides. This invention also relates in part to methods of controlling resistant weeds, plant breeding and herbicide tolerant plants. In some embodiments, the event sequence can be “stacked” with other traits, including, for example, other herbicide tolerance gene(s) and/or insect-inhibitory proteins. This invention further relates in part to endpoint TaqMan PCR assays for the detection of Event pDAB8264.44.06.1 in soybeans and related plant material. Some embodiments can perform high throughput zygosity analysis of plant material and other embodiments can be used to uniquely identify the zygosity of and breed soybean lines comprising the event of the subject invention. Kits and conditions useful in conducting these assays are also provided. | 02-06-2014 |