Patent application number | Description | Published |
20130076210 | PIEZOELECTRIC VIBRATION REED, PIEZOELECTRIC VIBRATOR, OSCILLATOR, ELECTRONIC INSTRUMENT, AND RADIO TIMEPIECE - A piezoelectric vibration reed which is capable of inhibiting vibrations of a vibrating arm portion in the thickness direction and inhibiting the increase in CI value and a vibration leak, a piezoelectric vibrator, an oscillator, an electronic instrument, and a radio timepiece using the piezoelectric vibration reed is provided. A piezoelectric vibration reed includes: a pair of vibrating arm portions arranged side by side; groove portions formed on both main surfaces of the vibrating arm portions and extending in the Y direction (the longitudinal direction) of the vibrating arm portions; a base portion connecting the pair of vibrating arm portions; and the groove portions are each formed in the interior thereof with a rib extending from a wall surface on a −Y side (proximal end side) to a +Y side (distal end side). | 03-28-2013 |
20130077449 | TERMINAL CONNECTING STRUCTURE FOR ELECTRONIC COMPONENT, PACKAGE, PIEZOELECTRIC VIBRATOR, OSCILLATOR, ELECTRONIC INSTRUMENT, AND RADIO TIMEPIECE - To provide a terminal connecting structure for an electronic component which achieves prevention of an increase in the electric resistance value between a through electrode and an electrode connected thereto and ensuring preferable conductive performance, a package, a piezoelectric vibrator, an oscillator, an electronic instrument, and a radio timepiece having a substrate of this terminal connecting structure for the electronic component. There is provided a terminal connecting structure for an electronic component including; a through electrode penetrating through a base substrate: and an external electrode electrically connected to the through electrode, wherein an outer end surface of the through electrode is formed with a coating film of a conductive oxide which covers the outer end surface, and the through electrode and the external electrode are electrically connected via the film of the conductive oxide. | 03-28-2013 |
20130082576 | METHOD OF MANUFACTURING PIEZOELECTRIC VIBRATION REED, PIEZOELECTRIC VIBRATION REED, PIEZOELECTRIC VIBRATOR, OSCILLATOR, ELECTRONIC INSTRUMENT, AND RADIO TIME PIECE - A method of manufacturing a piezoelectric vibration reed is provided. The piezoelectric vibration reed includes a pair of vibrating arm portions and a base portion. The pair of vibrating arm portions is disposed in parallel to each other. The base portion is configured to integrally support proximal end portions of the pair of vibrating arm portions in a longitudinal direction of the vibrating arm portions. The method of manufacturing the piezoelectric vibration reed forms a slit-shaped notched portion at a crotch portion located between the proximal end portions of the pair of vibrating arm portions. | 04-04-2013 |
20130082792 | PIEZOELECTRIC VIBRATION REED, PIEZOELECTRIC VIBRATOR, OSCILLATOR, ELECTRONIC INSTRUMENT, AND RADIO TIMEPIECE - A piezoelectric vibration reed includes a pair of vibrating arm portions arranged in parallel to each other and a base portion. The base portion is integrally coupled to proximal ends of the pair of the vibrating arm portions in a longitudinal direction that the vibrating arm portions extend. The base portion includes a connecting portion, a mount portion, and a narrow portion between the connecting portion and the mount portion. The base portion further includes a pair of notched portions notched respectively inwardly from both sides of the base portion in the width direction and ribs projecting outwardly in the width direction of the base portion and arranged in the interiors of the notched portions. | 04-04-2013 |
20130119472 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device comprising: a PW layer formed at a surface of a semiconductor substrate; an NW layer formed at the surface of the semiconductor substrate to be in contact with the PW layer; a p+ base layer formed at the surface of the semiconductor substrate in the PW layer; an n+ collector layer formed at the surface of the semiconductor substrate in the NW layer; an n+ emitter layer located between the p+ base layer and the n+ collector layer and formed at the surface of the semiconductor substrate in the PW layer; and an n± layer formed between the n+ collector layer and the PW layer to be in contact with the n+ collector layer. | 05-16-2013 |
20130126702 | OPTICAL SENSOR DEVICE - An optical sensor element is mounted in a package which includes a glass lid substrate ( | 05-23-2013 |
20130131520 | BIOLOGICAL INFORMATION MEASURING APPARATUS AND BIOLOGICAL INFORMATION MEASURING METHOD - A biological information measuring apparatus includes: a measuring apparatus configured to measure biological information, and a display apparatus configured to switch a first frequency that receives first information indicating the biological information transmitted from the measuring apparatus and a second frequency which is a frequency that transmits second information generated on the basis of the received first information and is a frequency higher than the first frequency. | 05-23-2013 |
20130134300 | OPTICAL SENSOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a high-reliability, compact, and low-cost optical sensor device. The optical sensor device includes a glass lid substrate ( | 05-30-2013 |
20130135972 | ELECTRONIC TIMEPIECE - An electronic timepiece includes an external case, a pressure sensor provided in the external case for detecting pressure, and a protection case surrounding an outer peripheral surface of the pressure sensor to protect and support the pressure sensor. A sensor housing opening is formed in the external case and houses the pressure sensor and the protection case, and the protection case is arranged near a center portion of the sensor housing opening. A case holding gasket has a cylindrical portion fitted between an inside surface of the sensor housing opening and an outside surface of the protection case through a given interference with respect to the sensor housing opening and the protection case. An inward flange portion is provided in the case holding gasket and regulates movement in a direction in which the protection case falls off the external case toward the outside. | 05-30-2013 |
20130137956 | BIOLOGICAL INFORMATION DETECTION DEVICE - A biological information detection device includes a main body portion, a heartbeat detection portion, forced integrally with the main, body portion, which has electrodes that come into contact with a biological surface, and a fixing band, detachably provided to the main body portion, which mounts the main body portion and the heartbeat detection portion to a user. A sealing portion for securing sealing of an electrical connection portion is provided in the periphery of the electrical connection portion that electrically connects the main body portion to the electrodes of the heartbeat detection portion. | 05-30-2013 |
20130138007 | HEARTBEAT MEASURING DEVICE AND HEARTBEAT MEASURING METHOD - Information is stored, and it is determined whether or not a measurement state of a heart rate is normal on the basis of the information. | 05-30-2013 |
20130158380 | BIOLOGICAL INFORMATION DETECTION DEVICE - A biological information detection device includes a main body portion, a heartbeat detection portion, provided integrally with the main body portion, which has electrodes that come into contact with a biological surface, and a fixing band, detachably provided to the main body portion, which mounts the main body portion and the heartbeat detection portion to a human body. The main body portion and the heartbeat detection portion are integrally provided through a mechanical connection convex portion that mechanically connects the main body portion and the heartbeat detection portion to each other, and an electrical connection portion that electrically connect the main body portion and the electrodes of the heartbeat detection portion. A relative positional relationship between the mechanical connection convex portion and the electrical connection portion is set so as not to be arranged alongside a load direction of external force acting on the mechanical connection convex portion. | 06-20-2013 |
20130168763 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An oxide film is formed by STI in a silicon surface region in which a substrate potential heavily doped diffusion layer and a source heavily doped diffusion layer are to be provided later between trenches at predetermined intervals. The oxide film is removed after the trench is formed, to thereby form a region which is lower than a surrounding surface. Thus, in the vertical MOS transistor having a trench structure which includes a side spacer, a silicide on a gate electrode embedded in the trench and a silicide on the substrate potential heavily doped diffusion layer and the source heavily doped diffusion layer can be separated from each other. | 07-04-2013 |
20130170325 | CALENDAR MECHANISM AND TIMEPIECE HAVING THE SAME - A calendar mechanism of a timepiece includes a month cam having a cam surface distinguishing between a long month (31 days) and a short month (30 days or less) and makes one rotation a year. A date indicator driving wheel has a date finger that makes one rotation every 24 hours and engages with a date wheel of a date indicator to rotate the date indicator. An operating lever structure has a proximal portion friction-engaged with an offset shaft to rotate around the offset shaft offset with respect to the rotation center of the date indicator driving wheel. The operating lever structure has a first distal end portion engaged with the month cam and a second distal end portion engaged with a month end tooth of the date indicator to effect additional date feeding by one day with respect to the date indicator at the end of a short month. | 07-04-2013 |
20130170328 | STEPPING MOTOR CONTROL CIRCUIT, MOVEMENT, AND ANALOGUE ELECTRONIC TIMEPIECE - A rotation detection unit configured to detect the condition of rotation of a stepping motor on the basis of an induced signal generated in a drive coil of the stepping motor in a detection period in which the condition of rotation of the stepping motor is detected and a control unit configured to rotationally drive the stepping motor by supplying a drive signal to the drive coil of the stepping motor within the driving period in which the stepping motor is rotationally driven are provided. The driving period and part of the detection period are configured to overlap with each other in a first time interval, and the control unit stops supply of the drive signal to the drive coil of the stepping motor in the first time interval. | 07-04-2013 |
20130171782 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - Forming a photoresist on a region other than a region on a trench gate electrode for a mask, a third gate insulating film on the trench gate electrode is etched and removed. After that, a non-doped polycrystalline silicon layer is formed on second and third gate insulating films and also on the trench gate electrode, and, N-type and P-type high concentration impurities are introduced by an ion implantation with the use of separate masks on the polycrystalline silicon layer of NMOS transistors and PMOS transistors with a low breakdown voltage and a high breakdown voltage. Then, a second gate electrode is formed by anisotropic etching. With the steps as described above, a first gate electrode inside the trench and the second gate electrode to be used in the lateral MOS transistor are laminated, to thereby reduce fluctuations due to the etching. | 07-04-2013 |
20130172719 | BIOMETRIC INFORMATION DETECTING APPARATUS - A biometric information detecting apparatus including: a pair of electrodes coming into contact with a surface of a living body; and a circuit board to which a pair of the electrodes are connected and configured to detect biometric information on the basis of a potential difference generated between a pair of the electrodes, the circuit board including an electrode connecting pattern Co which a pair of the electrodes are electrically connected, and a detection circuit unit configured to detect the biometric information on the basis of the potential difference; and a GND pattern provided on the circuit board between the electrode connecting pattern and the detection circuit unit. | 07-04-2013 |
20130182542 | STEPPING MOTOR CONTROL CIRCUIT, MOVEMENT, AND ANALOGUE ELECTRONIC TIMEPIECE - A control circuit selects a drive pulse group corresponding to the detected voltage of a power cell from among plural drive pulse groups each including plural types of main drive pulses, and selects a drive pulse according to the detected condition of rotation of a stepping motor from among main drive pulses included in the selected drive pulse group or a correction drive pulse having larger energy than the main drive pulses. When the control circuit selects a main drive pulse initially by selecting the drive pulse group, the control circuit selects the main drive pulse having the largest energy in the selected drive pulse group. A drive pulse group selection circuit drives the stepping motor by the main drive pulse in the drive pulse group selected by the control circuit or the correction drive pulse via a main drive pulse output circuit and a correction drive pulse output circuit. | 07-18-2013 |
20130187216 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - Provided is a P-channel non-volatile semiconductor memory device with improved write characteristics. In the P-channel non-volatile semiconductor memory device, a resistive element is formed and connected to a control gate. A delay effect of the resistive element connected to the control gate is utilized to increase a potential of the control gate so as to cancel out a decrease in floating gate potential caused by hot electrons injected by writing. This can prevent the weakening of an electric field between a pinch-off point and a drain, which leads to a decrease in amount of generated DAHEs in writing. Thus, write characteristics can be improved. | 07-25-2013 |
20130187232 | SEMICONDUCTOR DEVICE - In the semiconductor device including an ESD protection N-type MOS transistor having a sufficient ESD protective function, a drain region of the ESD protection N-type MOS transistor is electrically connected to a drain contact region via a drain extended region. The drain extended region is provided on a side surface and a lower surface of an ESD protection trench isolation region, and is formed of an impurity diffusion region of the same conductivity type as that of the drain region. The drain contact region is formed of an impurity diffusion region of the same conductivity type as that of the drain region. | 07-25-2013 |
20130188460 | ELECTRONIC TIMEPIECE - An electronic timepiece of the invention is configured to compare a no-illuminance no-operation period (a period in which no light is incident on a solar panel and a state in which no operation is performed in an operating unit continues), with a predetermined first transfer period (for example, 2 hours) when the time measurement action is not in execution in the chronograph mode or the timer mode, and compare the no-illuminance no-operation period with a predetermined second transfer period (for example, 72 hours) longer then the first transfer period when the time measurement action is in execution in a chronograph mode or the timer mode. The electronic timepiece is transferred to the power save mode when the no-illuminance no-operation period reaches the transfer period and stops a display action on a display unit. | 07-25-2013 |
20130194896 | ELECTRONIC TIMEPIECE - According to an electronic timepiece of the invention, when a secondary battery is in an uncharged state and an oscillation circuit, a display unit, and a CPU are restored from an inoperable state to a normally charged state which makes the respective members to be operable, the electronic timepiece activates and oscillates the oscillation circuit when a secondary battery voltage reaches a predetermined first voltage (for example, 0.9 V), and cancels a reset of the CPU when the secondary battery voltage reaches a predetermined second voltage (for example, 1.2 V), and starts a time-of-day display on the display unit when the secondary battery voltage reaches a predetermined third voltage (2.2 V). | 08-01-2013 |
20130194897 | ELECTRONIC TIMEPIECE - There is provided an electronic timepiece of the invention that includes a solar panel which receives light to generate electric power, is operated with the electric power supplied from a secondary battery charged with an electromotive voltage of the solar panel, and stops a display operation of a display unit with transition to a power saving mode under predetermined conditions, the electronic timepiece including a control unit (mode control unit) which avoids transition from the normal mode to the power saving mode, when a voltage of the secondary battery is equal to or more than a predetermined voltage value. | 08-01-2013 |
20130194898 | ELECTRONIC TIMEPIECE - There is provided an electronic timepiece that includes a solar panel which receives light to generate electric power, is operated with the electric power supplied from a secondary battery charged with output voltage of the solar panel, and includes a normal mode in which clock display is performed on a display unit and a power saving mode in which clock display on the display unit is stopped, based on illuminance detection of the solar panel, the electronic timepiece including: a mode control unit which switches cycles of the illuminance detection, by setting a cycle of the illuminance detection of the normal mode as a first cycle (for example, one minute), and a cycle of the illuminance detection of the power saving mode as a second cycle (for example, two seconds). | 08-01-2013 |