Patent application number | Description | Published |
20080271667 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d | 11-06-2008 |
20080272377 | Gallium Nitride Substrate and Gallium Nitride Film Deposition Method - Affords high-carrier-concentration, low-cracking-incidence gallium nitride substrates and methods of forming gallium nitride films. A gallium nitride film | 11-06-2008 |
20080272392 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d | 11-06-2008 |
20080296585 | GROWTH METHOD OF GaN CRYSTAL, AND GaN CRYSTAL SUBSTRATE - A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate. | 12-04-2008 |
20080299748 | Group III-V Crystal - Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. The III-V crystals are obtained by manufacturing method characterized in including: a step of depositing a metal film ( | 12-04-2008 |
20080308814 | GALLIUM NITRIDE SUBSTRATE AND GALLIUM NITRIDE LAYER FORMATION METHOD - There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×10 | 12-18-2008 |
20080308815 | GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Device, and GaN Substrate Manufacturing Method - Affords a GaN substrate from which enhanced-emission-efficiency light-emitting and like semiconductor devices can be produced, an epi-substrate in which an epitaxial layer has been formed on the GaN substrate principal surface, a semiconductor device, and a method of manufacturing the GaN substrate. The GaN substrate is a substrate having a principal surface with respect to whose normal vector the [0001] plane orientation is inclined in two different off-axis directions. | 12-18-2008 |
20090071394 | AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE - A low dislocation density Al | 03-19-2009 |
20090108297 | SEMI-INSULATING NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, AND FIELD-EFFECT TRANSISTOR - A method of manufacturing a semi-insulating nitride semiconductor substrate includes the steps of forming on an underlying substrate, a mask in which dotted or striped coating portions having a width or a diameter Ds from 10 μm to 100 μm are arranged at an interval Dw from 250 μm to 2000 μm, growing a nitride semiconductor crystal on the underlying substrate with an HVPE method at a growth temperature from 1040° C. to 1150° C. by supplying a group III raw material gas and a group V raw material gas of which group V/group III ratio R | 04-30-2009 |
20090127564 | GaN Substrate Manufacturing Method, GaN Substrate, and Semiconductor Device - A GaN substrate manufacturing method characterized in including a step of processing the surface of a substrate composed of a GaN single crystal into a concavely spherical form, based on differences in orientation of the crystallographic axis across the substrate surface. Processing the GaN substrate surface into a concavely spherical form reduces, in the post-process GaN substrate surface, differences in orientation of the crystallographic axis with respect to a normal. Furthermore, employing to manufacture semiconductor devices a GaN substrate in which differences in orientation of the crystallographic axis have been reduced makes it possible to uniformize in device characteristics a plurality of semiconductor devices fabricated from a single GaN substrate, which contributes to improving yields in manufacturing the semiconductor devices. | 05-21-2009 |
20090197398 | III Nitride Single Crystal and Method of Manufacturing Semiconductor Device Incorporating the III Nitride Single Crystal - A III nitride single-crystal manufacturing method in which a liquid layer ( | 08-06-2009 |
20090208749 | Group III Nitride Single Crystal and Method of Its Growth - Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal ( | 08-20-2009 |
20090209091 | Method of Manufacturing Group III Nitride Crystal - Made available is a Group III nitride crystal manufacturing method whereby incidence of cracking in the III-nitride crystal when the III-nitride substrate is removed is kept to a minimum. III nitride crystal manufacturing method provided with: a step of growing, onto one principal face ( | 08-20-2009 |
20090236694 | Method of Manufacturing III-Nitride Crystal, and Semiconductor Device Utilizing the Crystal - The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal ( | 09-24-2009 |
20090267190 | Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate - Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5×10 | 10-29-2009 |
20100009526 | FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE - A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided. | 01-14-2010 |
20100090313 | III-V Compound Crystal and Semiconductor Electronic Circuit Element - Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates, and can be used to manufacture semiconductor devices with good quality and at high yields. The III-V crystals are characterized by the following properties: the carrier concentration, resistivity, and dislocation density of the III-V compound crystal are uniform to within ±30% variation along the surface; the III-V compound crystal is misoriented from the c-plane such that the crystal surface does not include any region where its off-axis angle with the c-plane is 0°; and the full width at half-maximum in XRD at the crystal center of the III-V compound is not greater than 150 arcsec. | 04-15-2010 |
20100123168 | NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d | 05-20-2010 |
20100148174 | GaN Epitaxial Wafer and Semiconductor Devices, and Method of Manufacturing GaN Epitaxial Wafer and Semiconductor Devices - Affords GaN epitaxial wafers designed to improve production yields, as well as semiconductor devices utilizing such GaN epitaxial wafers, and methods of manufacturing such GaN epitaxial wafers and semiconductor devices. | 06-17-2010 |
20100190318 | METHOD OF RECOVERING AND REPRODUCING SUBSTRATES AND METHOD OF PRODUCING SEMICONDUCTOR WAFERS - A method of recovering a first substrate, including the steps of: sticking a second substrate on a semiconductor layer epitaxially grown on the first substrate; and separating the semiconductor layer and the first substrate. Furthermore, a method of reproducing a first substrate, including the step of surface processing the first substrate separated. Furthermore, a method of reproducing a first substrate, including the step of homoepitaxially growing the first substrate surface processed. Furthermore, a method of producing a semiconductor wafer, including the step of epitaxially growing a semiconductor layer on a first substrate. Thus a group III nitride or similar, expensive substrate can be used to efficiently and economically, epitaxially grow a group III nitride or similar semiconductor layer. | 07-29-2010 |
20100207138 | III Nitride Semiconductor Crystal, III Nitride Semiconductor Device, and Light Emitting Device - Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width. | 08-19-2010 |
20100314625 | GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture - Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass | 12-16-2010 |
20100322841 | III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substrate, Method of Manufacturing III-Nitride Single-Crystal Ingot, and Method of Manufacturing III-Nitride Single-Crystal Substrate - Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking. | 12-23-2010 |
20100326876 | Method of Storing GaN Substrate, Stored Substrate, and Semiconductor Device and Method of Its Manufacture - Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate ( | 12-30-2010 |
20110018003 | GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a group III nitride semiconductor substrate includes the growth step of epitaxially growing a first group III nitride semiconductor layer on an underlying substrate, and the process step of forming a first group III nitride semiconductor substrate by cutting and/or surface-polishing the first group III nitride semiconductor layer. In the growth step, at least one element selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb is added as an impurity element by at least 1×10 | 01-27-2011 |
20110057197 | GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THEREOF AND GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A GaN single crystal substrate has a main surface with an area of not less than 10 cm | 03-10-2011 |
20110065265 | FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE - A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided. | 03-17-2011 |
20110108852 | GaN SUBSTRATE AND LIGHT-EMITTING DEVICE - The present GaN substrate can have an absorption coefficient not lower than 7 cm | 05-12-2011 |
20110121311 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE - The present invention provides a method for manufacturing a semiconductor substrate including a low-resistance nitride layer laminated on a substrate, a method for manufacturing a semiconductor device, a semiconductor substrate, and a semiconductor device. A method for manufacturing a semiconductor substrate of the present invention includes the following steps: A nitride substrate having a principal surface and a back surface opposite to the principal surface is prepared. Vapor-phase ions are implanted into the back surface of the nitride substrate. The back surface of the nitride substrate is bonded to a dissimilar substrate to form a bonded substrate. The nitride substrate is partially separated from the bonded substrate to form a laminated substrate including the dissimilar substrate and a nitride layer. The laminated substrate is heat-treated at a temperature over 700° C. | 05-26-2011 |
20110133207 | GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate ( | 06-09-2011 |
20110133209 | GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2×10 | 06-09-2011 |
20110223749 | METHOD OF FORMING NITRIDE SEMICONDUCTOR EPITAXIAL LAYER AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1×10 | 09-15-2011 |
20110278588 | Method of Preparing and Storing GaN Substrate, Prepared and Stored GaN Substrate, and Semiconductor Device and Method of Its Manufacture - A GaN substrate storage method of storing, within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m | 11-17-2011 |
20120034763 | Method of Manufacturing Nitride Semiconductor Substrate - The present invention provides a method of manufacturing a nitride semiconductor substrate capable of efficiently manufacturing a nitride semiconductor substrate having a nonpolar plane as a major surface in which polycrystalline growth is minimized. A method of manufacturing a GaN substrate, which is a nitride semiconductor substrate, includes steps (S | 02-09-2012 |
20120070962 | Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate - Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5×10 | 03-22-2012 |
20120094473 | GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate ( | 04-19-2012 |
20120118226 | Method of Synthesizing Nitride Semiconductor Single-Crystal Substrate - Fracture toughness of AlGaN single-crystal substrate is improved and its absorption coefficient reduced. A nitride semiconductor single-crystal substrate has a composition represented by the formula Al | 05-17-2012 |
20120126371 | CONDUCTIVE NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME - A method for producing a conductive nitride semiconductor substrate circuit includes the steps of forming, on an underlying substrate, a mask including dot or stripe masking portions having a width or diameter of 10 to 100 μm and arranged at a spacing of 250 to 10,000 μm; growing a nitride semiconductor crystal on the underlying substrate by hydride vapor phase epitaxy (HVPE) at a growth temperature of 1,040° C. to 1,150° C. by supplying a group III source gas, a group V source gas, and a silicon-containing gas in a V/III ratio of 1 to 10; and removing the underlying substrate, thus forming a free-standing conductive nitride semiconductor crystal substrate having a resistivity r of 0.0015 Ωcm≦r≦0.01 Ωcm, a thickness of 100 μm or more, and a radius of bow curvature U of 3.5 m≦U≦8 m. | 05-24-2012 |
20120142168 | III-V Compound Crystal and Semiconductor Electronic Circuit Element - Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates, and can be used to manufacture semiconductor devices with good quality and at high yields. The III-V crystals are characterized by the following properties: the carrier concentration, resistivity, and dislocation density of the III-V compound crystal are uniform to within ±30% variation along the surface; the III-V compound crystal is misoriented from the c-plane such that the crystal surface does not include any region where its off-axis angle with the c-plane is 0°; and the full width at half-maximum in XRD at the crystal center of the III-V compound is not greater than 150 arcsec. | 06-07-2012 |
20120305933 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A group III nitride semiconductor light-emitting device includes a GaN crystal substrate and at least one group III nitride semiconductor layer disposed on a main surface of the GaN crystal substrate. The substrate includes a matrix crystal region and a c-axis-inverted crystal region. An off angle θ is formed between the main surface and a {0001} plane, and an off-angle component of a first direction has an absolute value |θ | 12-06-2012 |
20120315445 | Group-III Nitride Crystal Composite - III-nitride crystal composites are made up of especially processed crystal slices cut from III-nitride bulk crystal having, ordinarily, a {0001} major surface and disposed adjoining each other sideways, and of III-nitride crystal epitaxially on the bulk-crystal slices. The slices are arranged in such a way that their major surfaces parallel each other, but are not necessarily flush with each other, and so that the [0001] directions in the slices are oriented in the same way. | 12-13-2012 |
20120329245 | Group III Nitride Crystal and Method for Producing the Same - A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates | 12-27-2012 |
20130040437 | Method of Manufacturing Composite Substrate - A composite-substrate manufacturing method is provided with: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of setting said surface of the bulk substrate against the second substrate, and bonding the bulk substrate and the second substrate together to obtain a bonded substrate; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing the remaining portion of the bulk substrate from the bonded substrate; characterized in that a predetermined formula as for the first temperature, the thermal expansion coefficient of the first substrate, and the thermal expansion coefficient of the second substrate is satisfied. | 02-14-2013 |
20130160699 | Method of Manufacturing III-Nitride Crystal - Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates. | 06-27-2013 |
20130244406 | FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE - A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided. | 09-19-2013 |
20130256696 | Prepared and Stored GaN Substrate - A GaN substrate is stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m | 10-03-2013 |
20130292802 | NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d | 11-07-2013 |
20130337632 | Method for Producing Group III Nitride Crystal - A method for producing a Group III nitride crystal includes the steps of cutting a plurality of Group III nitride crystal substrates | 12-19-2013 |
20140061668 | GaN Single Crystal Substrate and Method of Manufacturing Thereof and GaN-based Semiconductor Device and Method of Manufacturing Thereof - A GaN single crystal substrate has a main surface with an area of not less than 10 cm | 03-06-2014 |
20140103353 | GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, LAMINATED GROUP III NITRIDE COMPOSITE SUBSTRATE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A group III nitride composite substrate includes a support substrate and a group III nitride film. A ratio s | 04-17-2014 |
20140103358 | Composite Substrate - An epitaxial-deposition composite substrate, of more than about 50 mm diameter, in which a nitride-compound semiconductor first substrate is bonded together with a second substrate of either identical or different material. The first substrate is ion-implanted, and on its nitrogen-face side is coated with a special film of thickness within a predetermined range. On a bonding side of the second substrate a special coating of thickness within the predetermined range is formed. The join created by the coated nitrogen-face side of the first substrate being bonded to the coated bonding side of the second substrate occupies at least 90% of the surface area where the two substrates meet. | 04-17-2014 |
20140175616 | Composite of III-Nitride Crystal on Laterally Stacked Substrates - Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10±2}, {11-2±2}, {20-2±1} or {22-4±1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. | 06-26-2014 |
20140369920 | Group III Nitride Crystal Substrates and Group III Nitride Crystal - Group III nitride crystal produced by cutting, from III nitride bulk crystal, a plurality of Group III nitride crystal substrates with major-surface plane orientation misoriented five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates adjacent to each other such that their major surfaces are parallel to each other and such that their [0001] directions coincide with each other, and growing a Group III nitride crystal on the major surfaces. The Group III nitride crystal substrates are further characterized by satisfying at least either an oxygen-atom concentration of 1×10 | 12-18-2014 |