Patent application number | Description | Published |
20080237807 | SEMICONDUCTOR DEVICE - A second electrode is selectively brought into contact with a semiconductor substrate. Specifically, an insulating film having opening portions is provided on the second principal surface of the semiconductor substrate, and the second electrode is provided on the insulating film. The second electrode comes into contact with the second principal surface of the semiconductor substrate through the opening portions. The total area of the opening portions is approximately the half of the total area of the second principal surface of the semiconductor substrate. Consequently, minority carriers (holes) are prevented by the insulating film from being drawn out, and thus, the loss of the minority carriers around the second electrode is decreased. Accordingly, the conductivity modulation effect is improved. Therefore, the forward voltage can be decreased even with a structure in which the impurity concentration of a p type impurity region is decreased in order to shorten a reverse recover time. | 10-02-2008 |
20090230393 | DIODE - In a pn junction diode having a conductivity modulating element provided on a first principal surface of a semiconductor substrate, when an impurity concentration of a p type impurity region is lowered to shorten a reverse recovery time, hole injection is suppressed, thereby causing a problem that a forward voltage value is increased at a certain current point. Moreover, introduction of a life time killer to shorten the reverse recovery time leads to a problem of increased leak current. On an n− type semiconductor layer that is a single crystal silicon layer, a p type polycrystalline silicon layer (p type polysilicon layer) is provided. Since the polysilicon layer has more grain boundaries than the single crystal silicon layer, an amount of holes injected into the n− type semiconductor layer from the p type polysilicon layer in forward voltage application can be suppressed. Moreover, a natural oxide film formed between the n− type semiconductor layer and the p type polysilicon layer in formation of the p type polysilicon layer can also reduce the amount of holes injected into the n− type semiconductor layer. Thus, a time to extract the holes in reverse voltage application, that is, a reverse recovery time can be shortened without using a life time killer. | 09-17-2009 |
20100320557 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device having an anode of a Si-FRD and a cathode of a Si-SBD which are serially connected. The Si-SBD has a junction capacitance whose amount of accumulable charge is equal to or more than an amount of charge occurring at the time of reverse recovery of the Si-FRD, and has a lower breakdown voltage than the Si-FRD does. | 12-23-2010 |
Patent application number | Description | Published |
20080204105 | Power supply device, signal output apparatus and power supply method - A power supply device capable of suitably reducing a loss even in a case where power is supplied to an output device which outputs a high-frequency signal, a signal output apparatus in which a loss is suitably reduced, and a power supply method capable of suitably reducing a loss. The power supply device has a power supply section which supplies a power supply voltage to an output device which is supplied with the power supply voltage and outputs an output signal, and a voltage control section which controls the power supply section so that the power supply voltage follows the envelope of the output signal from the output device. | 08-28-2008 |
20100171477 | Power supply device and electronic apparatus - A power supply device includes a first supply section that supplies power according to an extent of a collective load of processing in a processing apparatus for the whole of the processing apparatus which processes data, and further includes a second supply section that supplies, at a place on a supply path through which power is supplied from the first supply section to the processing apparatus, power according to an extent of a load of processing in local in a portion of the processing apparatus to the portion, and supplies power smaller than supplying power of the first supply section. | 07-08-2010 |
20100176779 | Power supply device and electronic apparatus - A power supply device includes: a power supply plane to which a processing circuit is electrically connected to supply electrical power to the processing circuit and in which the processing circuits are connected to each supply place; plural OBP's each of which applies a voltage to the power supply plane to supply electrical power to the processing circuits via the power supply plane; and a power supply control section which controls an application voltage in individual one of the OBP's by reflecting a status of power supplying in other OBP's other than the individual one out of the plural OBP's to uniform a dispersion of voltages between the supply places. | 07-15-2010 |
20100176780 | Power supply device and electronic apparatus - A power supply device includes: a power supply connector which receives supply of power and supplies the power to the outside thereof; plural OBPs which apply voltages to supply power, to each of processing devices to perform processing and to include different types of application voltages planned to be applied, and each of the plural OBPs is supplied with power directly or indirectly from the power supply connector; and a power supply control section that increases and decreases supplying power which each of the OBPs supplies to one processing device out of the plural processing devices according to an extent of a processing load in the one processing device as well as according to an extent of a processing load in another processing device whose application voltage is different from that of the one processing device. | 07-15-2010 |
20100176781 | Power supply device and electronic apparatus - A power supply device includes: a first supply section that supplies power in accordance with an extent of a load in processing in a processing device by applying a voltage to the processing device which processes data; and a second supply section that supplies, to the processing device, power smaller than the supplying power by the first supply section, in accordance with an extent of a load in processing in the processing device to increase and decrease a voltage with respect to the application voltage by the first supply section. | 07-15-2010 |
20110136450 | POWER CIRCUIT AND RADIO COMMUNICATION CIRCUIT USING SAME AND METHOD OF OPERATING A CIRCUIT - A power circuit and method thereof are provided. The power circuit includes an output circuit having an alternating current-coupling element and that supplies an output signal of the output circuit to an amplifier as a driving voltage. The power circuit includes an envelope signal-extracting unit extracting an envelope signal from a carrier wave, a simulation signal-waveform generating unit generating a simulation signal including a fluctuation component occurring when the envelope signal is transmitted to the output circuit, a fluctuation component-extracting unit extracting the fluctuation component included in the simulation signal, and an inverted component-generating unit generating an inverted component obtained by performing phase inversion for the fluctuation component, where the fluctuation component occurring in the output circuit is canceled out through the inverted component. | 06-09-2011 |