Patent application number | Description | Published |
20090034349 | SEMICONDUCTOR DEVICE - A memory module fast in random accesses, large in capacity, and low in fabricating cost. And the memory module can assure high security. The memory module consists of a flash memory, a dynamic random access memory, and a control circuit. The control circuit enables data transfer between the flash memory and the dynamic random access memory only with a read operation for a specific address in the memory module. When reading data from the memory module, the control circuit refreshes the dynamic random access memory. Thus the present invention can realize a large capacity and low cost memory module capable of reading data fast reading and assuring high security. | 02-05-2009 |
20090245004 | SEMICONDUCTOR DEVICE INCLUDING MULTI-CHIP - In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. The control circuit conducts assignment of addresses to the SRAM and DRAM, and stores data that must be retained over a long period of time in the SRAM. In the DRAM, a plurality of banks are divided into two sets, and mapped to the same address space, and sets are refreshed alternately. A plurality of chips of them are stacked and disposed, and wired by using the BGA and chip-to-chip bonding. | 10-01-2009 |
20090268502 | Semiconductor device with non-volatile memory and random access memory - A semiconductor device including a large capacity non-volatile memory and at least one random access memory, said the access time of said device being matched to the access time of each random access memory. The semiconductor memory device is comprised of: a non-volatile memory FLASH having a first reading time; a random access memory DRAM having a second reading time which is more than 100 times shorter than the first reading time; a circuit that includes a control circuit connected to both the FLASH and the DRAM and enabled to control accesses to those FLASH and DRAM; and a plurality of I/O terminals connected to the circuit. As a result, FLASH data is transferred to the DRAM before the DRAM is accessed, thereby matching the access time between the FLASH and the DRAM. Data is written back from the DRAM to the FLASH as needed, thereby keeping data matched between the FLASH and the DRAM and storing the data. | 10-29-2009 |
20100030952 | Memory Module, Memory System, and Information Device - A memory system including large-capacity ROM and RAM in which high-speed reading and writing are enabled is provided. | 02-04-2010 |
20100064101 | MEMORY CONTROLLER AND DATA PROCESSING SYSTEM - A memory controller and data processor have their operation mode switched from the page-on mode for high-speed access to a same page to the page-off mode in response to consecutive events of access to different pages, so that the memory access is performed at a high speed and low power consumption. | 03-11-2010 |
20110078351 | INFORMATION PROCESSOR SYSTEM - In an information processor system including a memory device (MEMO), a memory control device (SL | 03-31-2011 |
20110078366 | Semiconductor device with non-volatile memory and random access memory - A semiconductor device including a large capacity non-volatile memory and at least one random access memory, said the access time of said device being matched to the access time of each random access memory. The semiconductor memory device is comprised of: a non-volatile memory FLASH having a first reading time; a random access memory DRAM having a second reading time which is more than 100 times shorter than the first reading time; a circuit that includes a control circuit connected to both the FLASH and the DRAM and enabled to control accesses to those FLASH and DRAM; and a plurality of I/O terminals connected to the circuit. As a result, FLASH data is transferred to the DRAM before the DRAM is accessed, thereby matching the access time between the FLASH and the DRAM. Data is written back from the DRAM to the FLASH as needed, thereby keeping data matched between the FLASH and the DRAM and storing the data. | 03-31-2011 |
20110145500 | SEMICONDUCTOR DEVICE AND DATA PROCESSING SYSTEM - A high-speed, low-cost data processing system capable of ensuring expandability of memory capacity and having excellent usability while keeping constant latency is provided. The data processing system is configured to include a data processing device, a volatile memory, and a non-volatile memory. As the data processing device, the volatile memory, and the non-volatile memory are connected in series and the number of connection signals are reduced, the speed is increased while keeping expandability of memory capacity. The data processing device measures latency and performs a latency correcting operation to keep the latency constant. When data in the non-volatile memory is transferred to the volatile memory, error correction is performed to improve reliability. The data processing system formed of these plurality of chips is configured as a data processing system module in which the chips are disposed so as to be multilayered each other and are connected by a ball grid array (BGA) or a technology of wiring these chips. | 06-16-2011 |
20110258373 | Memory Module, Memory System,and Information Device - A memory system including ROM and RAM in which reading and writing are enabled. A memory system includes a non-volatile memory (FLASH), DRAM, a control circuit, and an information processing device. Data in FLASH is transferred to SRAM or DRAM in advance. Data transfer between the non-volatile memory and the DRAM can be performed in the background. The memory system including these plural chips is configured as a memory system module in which each chip is mutually laminated and each chip is wired via a ball grid array (BGA) and bonding wire between the chips. Data in FLASH can be read at the similar speed to that of DRAM by securing a region in which the data in FLASH can be copied in DRAM and transferring the data to DRAM in advance immediately after power is turned on or by a load instruction. | 10-20-2011 |
20120005421 | MEMORY CONTROLLER AND DATA PROCESSING SYSTEM - A memory controller and data processor have their operation mode switched from the page-on mode for high-speed access to a same page to the page-off mode in response to consecutive events of access to different pages, so that the memory access is performed at a high speed and low power consumption. | 01-05-2012 |
20120030403 | Memory Module, Cache System and Address Conversion Method - A memory system including a non-volatile memory, a cache memory, a control circuit, and a data processing device is configured. The high speed can be achieved by transferring data in the non-volatile memory to the cache memory to retain the same therein. When the data in the non-volatile memory is transferred to the cache memory, error correction is performed so as to improve the reliability. Since the cache memory and the non-volatile memory can be accessed from the data processing device independently, improvement in usability can be achieved. The memory system including the plurality of chips is configured as a memory system module where respective chips are arranged in a stacked manner and wired by a ball grid array (BGA) and wire bonding between chips. | 02-02-2012 |
20120066432 | Semiconductor Device - Provided is a user-friendly information processing system which is capable of maintaining latency within a fixed range and ensuring the expandability of a memory capacity at high speed and low cost. The information processing system, including an information processing device, a volatile memory, and nonvolatile memories, is configured. The information processing device, the volatile memory, and the nonvolatile memories are connected in series with one another to reduce the number of connection signals, thereby realizing speeding-up while maintaining the expandability of the memory capacity. The information processing device manages response time zones and time zones where responses overlap one another, and performs a correction operation on the latency, thereby realizing fast data transfer while maintaining the latency within the fixed range. The information processing device performs an error correction to improve the reliability when transferring the data of the nonvolatile memories to the volatile memory. The information processing system composed of a plurality of chips is configured as an information processing system/module in which the respective chips are arranged in layers, and wired together by a through via. | 03-15-2012 |
20120134203 | Semiconductor Device and Data Processing System - In a phase change memory, when M bit (8 bits=1 byte) data is written, erase operation and program operation are performed in units of n bit (M>n) data. Further, when M bit data is written, program operation is performed in units of the n bit (M>n) data. Further, when M bit data is read from the memory cell, read operation is performed in units of the n bit (M>n) data. For example, when the data is written into to the phase change memory, the data is not overwritten but program is performed after once erasing the target memory cell. The data size for erasure and the data size for program are made equal. Erase and program operation are performed only for the demanded data size. | 05-31-2012 |
20120262992 | SEMICONDUCTOR DEVICE INCLUDING MULTI-CHIP - In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. The control circuit conducts assignment of addresses to the SRAM and DRAM, and stores data that must be retained over a long period of time in the SRAM. In the DRAM, a plurality of banks are divided into two sets, and mapped to the same address space, and sets are refreshed alternately. A plurality of chips of them are stacked and disposed, and wired by using the BGA and chip-to-chip bonding. | 10-18-2012 |
20120265925 | SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING NON-VOLATILE MEMORY DEVICE - A control circuit of a semiconductor device (memory module) realizes long life and others by a mechanism that suppresses and smoothes variations in use of a memory by equalizing the sizes of data write and data erase with respect to a data write request and sequentially allocating and using addresses of the memory in data write to an overwritable non-volatile memory device without carrying out an overwriting operation even in the case of an overwrite request. The control circuit realizes data write by a set of two types of operations of (a) an operation of erasing data of a first address or an operation of setting a flag value to an invalid state and (b) an operation of writing data to a second address different from the first address or an operation of setting a flag value to a valid state. | 10-18-2012 |
20120271987 | Memory Module, Memory System, and Inforamtion Device - A memory system including ROM and RAM in which reading and writing are enabled. A memory system includes a non-volatile memory (FLASH), DRAM, a control circuit, and an information processing device. Data in FLASH is transferred to SRAM or DRAM in advance. Data transfer between the non-volatile memory and the DRAM can be performed in the background. The memory system including these plural chips is configured as a memory system module in which each chip is mutually laminated and each chip is wired via a ball grid array (BGA) and bonding wire between the chips. Data in FLASH can be read at the similar speed to that of DRAM by securing a region in which the data in FLASH can be copied in DRAM and transferring the data to DRAM in advance immediately after power is turned on or by a load instruction. | 10-25-2012 |
20130086312 | Semiconductor Device - An object of the present invention is to realize a highly reliable long-life information processor capable of high-speed operation and easy to handle. The processor includes a semiconductor device comprising a nonvolatile memory device including a plurality of overwritable memory cells, and a control circuit device for controlling access to the nonvolatile memory device. The control circuit device sets assignments of second addresses to the nonvolatile memory device independently of first addresses externally supplied, such that the physical disposition of part of the memory cells used for writing of first data to be written externally supplied is one of the first to (N+1)th of every (N+1) memory cells (N: a natural number) at least in one direction. | 04-04-2013 |
20130124790 | MEMORY MODULE, CACHE SYSTEM AND ADDRESS CONVERSION METHOD - A memory system including a non-volatile memory, a cache memory, a control circuit, and a data processing device is configured. The high speed can be achieved by transferring data in the non-volatile memory to the cache memory to retain the same therein. When the data in the non-volatile memory is transferred to the cache memory, error correction is performed so as to improve the reliability. Since the cache memory and the non-volatile memory can be accessed from the data processing device independently, improvement in usability can be achieved. The memory system including the plurality of chips is configured as a memory system module where respective chips are arranged in a stacked manner and wired by a ball grid array (BGA) and wire bonding between chips. | 05-16-2013 |
20130145081 | SEMICONDUCTOR DEVICE WITH NON-VOLATILE MEMORY AND RANDOM ACCESS MEMORY - A semiconductor device including a large capacity non-volatile memory and at least one random access memory, said the access time of said device being matched to the access time of each random access memory. The semiconductor memory device is comprised of: a non-volatile memory FLASH having a first reading time; a random access memory DRAM having a second reading time which is more than 100 times shorter than the first reading time; a circuit that includes a control circuit connected to both the FLASH and the DRAM and enabled to control accesses to those FLASH and DRAM; and a plurality of I/O terminals connected to the circuit. As a result, FLASH data is transferred to the DRAM before the DRAM is accessed, thereby matching the access time between the FLASH and the DRAM. Data is written back from the DRAM to the FLASH as needed, thereby keeping data matched between the FLASH and the DRAM and storing the data. | 06-06-2013 |
20130179606 | INFORMATION PROCESSOR SYSTEM - In an information processor system including a memory device (MEM | 07-11-2013 |
20130198439 | NON-VOLATILE STORAGE - The non-volatile storage SSD has non-volatile NVM, RAM capable of being accessed at a higher speed than this NVM, and a control unit for controlling accesses to the NVM and to the RAM. The control unit stores in the NVM an address translation table (LPT) that translates a logical address given to access this NVM to a physical address after dividing it into multiple tables, and stores in the RAM the multiple address translation tables-sub on RAM (LPT-SRs) that have been divided into multiple tables. | 08-01-2013 |
20130332667 | INFORMATION PROCESSOR - An information processor includes an information processing sub-system having information processing circuits and a memory sub-system performing data communication with the information processing sub-systems, wherein the memory sub-system has a first memory, a second memory, a third memory having reading and writing latencies longer than those of the first memory and the second memory, and a memory controller for controlling data transfer among the first memory, the second memory and the third memory; graph data is stored in the third memory; the memory controller analyzes data blocks serving as part of the graph data, and performs preloading operation repeatedly to transfer the data blocks to be required next for the execution of the processing from the third memory to the first memory or the second memory on the basis of the result of the analysis. | 12-12-2013 |
20150032949 | Semiconductor Device and Method of Controlling Non-Volatile Memory Device - A control circuit of a semiconductor device (memory module) realizes long life and others by a mechanism that suppresses and smoothes variations in use of a memory by equalizing the sizes of data write and data erase with respect to a data write request and sequentially allocating and using addresses of the memory in data write to an overwritable non-volatile memory device without carrying out an overwriting operation even in the case of an overwrite request. The control circuit realizes data write by a set of two types of operations of (a) an operation of erasing data of a first address or an operation of setting a flag value to an invalid state and (b) an operation of writing data to a second address different from the first address or an operation of setting a flag value to a valid state. | 01-29-2015 |
20150052296 | Semiconductor Device - Provided is a user-friendly information processing system which is capable of maintaining latency within a fixed range and ensuring the expandability of a memory capacity at high speed and low cost. The information processing system, including an information processing device, a volatile memory, and nonvolatile memories, is configured. The information processing device, the volatile memory, and the nonvolatile memories are connected in series with one another to reduce the number of connection signals, thereby realizing speeding-up while maintaining the expandability of the memory capacity. The information processing device manages response time zones and time zones where responses overlap one another, and performs a correction operation on the latency, thereby realizing fast data transfer while maintaining the latency within the fixed range. The information processing device performs an error correction to improve the reliability when transferring the data of the nonvolatile memories to the volatile memory. The information processing system composed of a plurality of chips is configured as an information processing system/module in which the respective chips are arranged in layers, and wired together by a through via. | 02-19-2015 |