Patent application number | Description | Published |
20100084013 | SOLAR CELL - A solar cell is disclosed. The solar cell includes an n-type or p-type amorphous silicon layer, a transparent electrode, and a metal buffer layer between the transparent electrode and the amorphous silicon layer. The metal buffer layer contains at least one of In, Sn, B, Al, Ga, and Zn. When the transparent electrode contains indium tin oxide (ITO), the metal buffer layer contains at least one of In and Sn. When the transparent electrode contains zinc oxide, the metal buffer layer contains at least one of B, Al, Ga, and Zn. | 04-08-2010 |
20100132792 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a substrate, at least one emitter layer on the substrate, at least one first electrode electrically connected to the at least one emitter layer, and at least one second electrode electrically connected to the substrate. At least one of the first electrode and the second electrode is formed using a plating method. | 06-03-2010 |
20100193027 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate of a first conductive type, an anti-reflection layer that is positioned on the substrate and is formed of a transparent conductive oxide material, a plurality of emitter layers on the substrate, the plurality of emitter layers being of a second conductive type opposite the first conductive type, a plurality of first electrodes on the plurality of emitter layers, and a plurality of second electrodes that are electrically connected to the substrate and are positioned to be spaced apart from the plurality of first electrodes. The first electrodes and the second electrodes are positioned on the same surface of the substrate. | 08-05-2010 |
20100206376 | SOLAR CELL, METHOD AND APPARATUS FOR MANUFACTURING SOLAR CELL, AND METHOD OF DEPOSITING THIN FILM LAYER - A solar cell, a method and apparatus for manufacturing a solar cell, and a method of depositing a thin film layer are disclosed. The manufacturing apparatus of a solar cell includes a substrate; a first electrode disposed on the substrate; a second electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a micro-crystalline silicon layer, and sensitivity of the micro-crystalline silicon layer is about 100 to about 1,000, the sensitivity being a ratio expressed as photo conductivity (PC)/dark conductivity (DC). | 08-19-2010 |
20100210092 | METHOD AND APPARATUS FOR MANUFACTURING SILICON THIN FILM LAYER AND MANUFACTURING APPARATUS OF SOLAR CELL - A method and apparatus for manufacturing a silicon thin film layer and a manufacturing apparatus of a solar cell are disclosed. The manufacturing apparatus of solar cell comprises an outer chamber; an inner chamber disposed within the outer chamber; a container disposed at the inner chamber and which receives a fluid; and a heat exchanger disposed at the outside of the outer chamber and which exchanges heat of the fluid. | 08-19-2010 |
20100212739 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell and a method of manufacturing the same are discussed. The solar cell includes an amorphous silicon layer, and a density of Si—Si bonds in the amorphous silicon layer is 7.48×10 | 08-26-2010 |
20100330299 | PLASMA DEPOSITION OF A THIN FILM - A plasma deposition apparatus and a method of manufacturing a thin film using the same are disclosed. The plasma deposition apparatus includes a reaction chamber inside which a first electrode and a second electrode are installed, a first power supply unit applying a first pulsed RF signal to one of the first and second electrodes, and a second power supply unit applying a second pulsed RF signal to one of the first and second electrodes. The first pulsed RF signal and the second pulsed RF signal are performed based on a predetermined deposition variable. | 12-30-2010 |
20110041901 | SOLAR CELL - A solar cell is disclosed. The solar cell includes a substrate, a first electrode on the substrate, a second electrode, and a photoelectric transformation unit between the first electrode and the second electrode. The photoelectric transformation unit includes a first intrinsic (referred to as an i-type) semiconductor layer formed of amorphous silicon doped with at least one of carbon (C) and oxygen (O) as impurities and a second i-type semiconductor layer formed of germanium (Ge)-doped microcrystalline silicon. | 02-24-2011 |
20110048533 | SOLAR CELL - A solar cell is discussed. The solar cell includes a substrate, a first electrode on the substrate, a second electrode, and at least one photoelectric transformation unit positioned between the first electrode and the second electrode. The at least one photoelectric transformation unit includes a p-type semiconductor layer, an intrinsic (i-type) semiconductor layer, an n-type semiconductor layer, and a buffer layer positioned between the p-type semiconductor layer and the i-type semiconductor layer. A hydrogen content of the buffer layer is more than a hydrogen content of the i-type semiconductor layer. | 03-03-2011 |
20110079264 | SOLAR CELL MODULE AND METHOD FOR MANUFACTURING THE SAME - A solar cell module and a method for manufacturing the same are discussed. The solar cell module includes a substrate including an electricity generation area and an edge area that are divided by an insulating area, and a plurality of solar cells positioned in the electricity generation area. Each of the solar cells includes a transparent electrode on the substrate, a silicon electricity generation layer on the transparent electrode, and a back electrode on the silicon electricity generation layer. The back electrode of one solar cell is electrically connected to the transparent electrode of another solar cell adjacent to the one solar cell. A side of a transparent electrode of an outermost solar cell adjacent to the insulating area is covered by a side portion of a silicon electricity generation layer of the outermost solar cell exposed in the insulating area. | 04-07-2011 |
20110100414 | THIN FILM SOLAR CELL MODULE - A thin film solar cell module is disclosed. The thin film solar cell module includes a substrate and a plurality of cells each including a first electrode positioned on the substrate, a second electrode positioned on the first electrode, and a photoelectric transformation layer positioned between the first electrode and the second electrode. The plurality of cells are divided into a first group and a second group. A plurality of cells included in the first group are electrically connected in series to one another, and a plurality of cells included in the second group are electrically connected in series to one another. The first group and the second group are connected in parallel to each other using a lead wire. The lead wire is positioned on both the first group and the second group. | 05-05-2011 |
20110139232 | SILICON THIN FILM SOLAR CELL - A silicon thin film solar cell is discussed. The silicon thin film solar cell includes a substrate on which light is incident, a first electrode positioned on the substrate at a surface opposite a surface of the substrate on which the solar light is incident, a second electrode positioned on the first electrode, at least one photoelectric conversion unit positioned between the first electrode and the second electrode, and a back reflection layer positioned between the at least one photoelectric conversion unit and the second electrode. The back reflection layer includes a first reflection layer formed of a material having an absorption coefficient equal to or less than 400 cm | 06-16-2011 |
20110180128 | THIN FILM SOLAR CELL - A thin film solar cell is discussed. The thin film solar cell includes a substrate, a first photoelectric conversion unit positioned on the substrate, and a back reflection layer for reflecting back light transmitted by the first photoelectric conversion unit to the first photoelectric conversion unit. The first photoelectric conversion unit includes a first intrinsic layer for light absorption. The back reflection layer includes a first back reflection layer doped with n-type or p-type impurities, and the first back reflection layer directly contacts the first intrinsic layer of the first photoelectric conversion unit. | 07-28-2011 |
20110186122 | SOLAR CELL - A solar cell is discussed. The solar cell includes a substrate, a photoelectric transformation unit including at least one semiconductor layer, a transparent electrode positioned between the substrate and the photoelectric transformation unit, and a buffer layer positioned between the transparent electrode and the substrate. The photoelectric transformation unit includes at least one p-type semiconductor layer, at least one n-type semiconductor layer, and at least one i-type semiconductor layer. | 08-04-2011 |
20110253213 | THIN FILM SOLAR CELL - A thin film solar cell is discussed. The thin film solar cell includes a substrate, a front electrode positioned on the substrate, a back electrode positioned on the front electrode, and a photoelectric conversion unit positioned between the front electrode and the back electrode. The front electrode includes first and second front electrode layers each containing a conductive material with light transmissivity. The first front electrode layer is formed on the substrate and contacts the substrate, and a porous pin hole exposing a portion of the substrate is formed in a portion of the first front electrode layer. The second front electrode layer contacts the first front electrode layer and covers the porous pin hole of the first front electrode layer. | 10-20-2011 |
20110259398 | THIN FILM SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A thin film solar cell and a method for manufacturing the same are discussed. The thin film solar cell includes a plurality of cells positioned on a substrate. Each of the plurality of cells includes a first electrode positioned on one surface of the substrate, at least one photoelectric conversion unit positioned on the first electrode, a back reflection layer including a first reflection layer contacting the at least one photoelectric conversion unit and a second reflection layer having an opening exposing a portion of the first reflection layer, and a second electrode positioned on the back reflection layer. The second reflection layer contacts the first reflection layer. The second electrode is electrically connected to the first reflection layer through the opening. | 10-27-2011 |
20110272015 | THIN FILM SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A thin film solar cell and a method for manufacturing the same are discussed. The thin film solar cell includes a substrate, a first electrode and a second electrode positioned on the substrate, and a first photoelectric conversion unit positioned between the first electrode and the second electrode. The first photoelectric conversion unit includes an intrinsic layer for light absorption containing microcrystalline silicon germanium, a p-type doped layer and an n-type doped layer respectively positioned on and under the intrinsic layer, and a seed layer not containing germanium positioned between the p-type doped layer and the intrinsic layer. | 11-10-2011 |
20120160315 | THIN FILM SOLAR CELL MODULE AND MANUFACTURING METHOD THEREOF - Discussed are a thin film solar cell module and a method of fabricating the same. A solar cell module includes a substrate; and a transparent electrode layer. The transparent electrode layer in turn includes a first electrode layer provided on the substrate; and a second electrode layer provided on the first electrode layer, wherein the first electrode layer and the second electrode layer are made of different materials and the second electrode layer is locally formed on portions of the first electrode layer. Accordingly, the transparent electrode layer exhibits improved transmittance of monochromatic light as well as increased light scattering, thereby enhancing efficiency of the thin film solar cell module. | 06-28-2012 |
20120199072 | METHOD AND APPARATUS FOR MANUFACTURING SILICON THIN FILM LAYER AND MANUFACTURING APPARATUS OF SOLAR CELL - A method and apparatus for manufacturing a silicon thin film layer and a manufacturing apparatus of a solar cell are disclosed. The manufacturing apparatus of solar cell comprises an outer chamber; an inner chamber disposed within the outer chamber; a container disposed at the inner chamber and which receives a fluid; and a heat exchanger disposed at the outside of the outer chamber and which exchanges heat of the fluid. | 08-09-2012 |
20130056052 | THIN FILM SOLAR CELL - A thin film solar cell includes a substrate, a first electrode positioned on the substrate, a second electrode separated from the first electrode, and a photoelectric conversion unit positioned between the first electrode and the second electrode. The photoelectric conversion unit includes a p-type semiconductor layer, an intrinsic semiconductor layer, and an n-type semiconductor layer. The p-type semiconductor layer includes a first doped layer, a second doped layer, and a third doped layer. A carbon content of the second doped layer positioned between the first doped layer and the third doped layer is more than a carbon content of the first doped layer and a carbon content of the third doped layer. | 03-07-2013 |
20130252371 | METHOD FOR MANUFACTURING THIN FILM SOLAR CELL - A method for manufacturing a thin film solar cell includes depositing a front electrode on a substrate in a chamber, etching the front electrode formed on the substrate to form an uneven portion on the surface of the front electrode, forming a photoelectric conversion unit on the front electrode, and forming a back electrode on the photoelectric conversion unit. The depositing of the front electrode includes depositing the front electrode while reducing a process pressure of the chamber from a first pressure to a second pressure lower than the first pressure. The etching of the front electrode form the uneven portion of the front electrode so that a top portion of the uneven portion includes a portion formed at the second pressure. | 09-26-2013 |
20140311558 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A solar cell includes a semiconductor substrate containing impurities of a first conductive type, a back surface field region which is positioned on a back surface of the semiconductor substrate and is doped more than the semiconductor substrate with impurities of the first conductive type, an emitter region which is on the back surface of the semiconductor substrate adjacent to the back surface field region and contains impurities of a second conductive type different than the first conductive type, a metal layer which contains impurities of the second conductive type and on a back surface of the emitter region, a back passivation layer exposing a portion of the back surface field region and a portion of the metal layer. | 10-23-2014 |
20140360571 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A manufacturing method of a solar cell is discussed. The manufacturing method of the solar cell includes forming a tunneling layer on one surface of a semiconductor substrate, forming a semiconductor layer on the tunneling layer, doping the semiconductor layer with a first conductive dopant and a second conductive dopant to form a first conductive semiconductor layer and a second conductive semiconductor layer, and diffusing hydrogen into the first and second conductive semiconductor layers to hydrogenate the first and second conductive semiconductor layers. | 12-11-2014 |
20150083203 | THIN FILM SOLAR CELL - A thin film solar cell includes a substrate, a first electrode and a second electrode positioned on one surface of the substrate, and a photoelectric conversion unit positioned between the first electrode and the second electrode. The photoelectric conversion unit includes a plurality of photoelectric conversion layers each including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer. At least one of the p-type semiconductor layers of the plurality of photoelectric conversion layers contains microcrystalline silicon (mc-Si) and amorphous silicon oxide (a-SiOx). | 03-26-2015 |