Patent application number | Description | Published |
20090243629 | METHOD AND APPARATUS FOR MINI MODULE EMI SHIELDING EVALUATION - A method for mini module EMI shielding effectiveness evaluation comprises providing a test vehicle including at least one test platform. The test platform includes at least one mini emitter, a mini receiver with a reference shield, and a mini receiver with a shield under test. EMI shielding effectiveness transmission signals are applied to the at least one mini emitter. Signals received by the mini receiver with a shield under test and the mini receiver with the reference shield are evaluated. The mini emitter, mini receiver with the reference shield, and mini receiver with the shield under test comprise components fabricated concurrently and under fabrication conditions used for fabrication of the test platform of the test vehicle. As used herein, a mini emitter and mini receiver may be interchanged according to the requirements of a given EMI shielding effectiveness evaluation. | 10-01-2009 |
20100006988 | Integrated Conformal Shielding Method and Process Using Redistributed Chip Packaging - An integrated conformal electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed on a plurality of encapsulated modules by attaching a plurality of modules ( | 01-14-2010 |
20100148357 | METHOD OF PACKAGING INTEGRATED CIRCUIT DIES WITH THERMAL DISSIPATION CAPABILITY | 06-17-2010 |
20110119910 | METHOD AND SYSTEM FOR RELEASING A MICROELECTRONIC ASSEMBLY FROM A CARRIER SUBSTRATE - Methods and system for forming a microelectronic assembly ( | 05-26-2011 |
20110217814 | METHOD FOR SINGULATING ELECTRONIC COMPONENTS FROM A SUBSTRATE - Methods for forming electronic assemblies are provided. A device substrate having a plurality of electronic components embedded therein is provided. The device substrate is attached to a carrier substrate using an adhesive material. A plurality of cuts are formed through the device substrate to divide the device substrate into a plurality of portions. Each of the plurality of portions includes at least one of the electronic components. A force is applied to each of the plurality of portions in a direction away from the carrier substrate to remove the plurality of portions from the carrier substrate. | 09-08-2011 |
20110241181 | SEMICONDUCTOR DEVICE WITH A CONTROLLED CAVITY AND METHOD OF FORMATION - A semiconductor device includes a first cap wafer having a first opening extending through the first cap wafer, and a second cap wafer bonded to the first cap wafer, wherein the second cap wafer has a second opening extending through the second cap wafer, and wherein the first opening is misaligned with respect to the second opening. The second cap wafer is bonded to a device wafer, wherein a cavity is formed between the device wafer and the second cap wafer, and wherein the device wafer comprises at least one semiconductor device in the cavity. A vacuum sealing layer is formed over the first cap wafer, wherein the sealing layer vacuum seals the first opening. | 10-06-2011 |
20120021565 | METHOD OF FORMING A PACKAGED SEMICONDUCTOR DEVICE - A method is used to form a packaged semiconductor device. A semiconductor device, which has an active surface, is placed in an opening of a circuit board. The circuit board has a first major surface and a second major surface having the opening, first vias that extend between the first major surface and the second major surface, first contact pads terminating the vias at the first major surface, and second contact pads terminating the vias at the second major surface. A dielectric layer is applied over the semiconductor device and the second major surface of the circuit board. An interconnect layer is formed over the dielectric layer. The interconnect layer has second vias electrically connected to the second contact pads, third vias that are electrically connected to the active surface of the semiconductor device, an exposed surface, and third contact pads at the exposed surface. | 01-26-2012 |
20130015566 | APPARATUS AND METHODS FOR QUAD FLAT NO LEAD PACKAGINGAANM GONG; ZHIWEIAACI ChandlerAAST AZAACO USAAGP GONG; ZHIWEI Chandler AZ USAANM Xu; JianwenAACI San DiegoAAST CAAACO USAAGP Xu; Jianwen San Diego CA USAANM Gao; WeiAACO USAAGP Gao; Wei USAANM Hayes; Scott M.AACI ChandlerAAST AZAACO USAAGP Hayes; Scott M. Chandler AZ US - A method for fabricating a semiconductor package is disclosed that includes providing a supply of lead elements, mounting a plurality of the lead elements on a lead frame until a predetermined number of lead elements are placed on the lead frame, and connecting other components on the lead frame to the lead elements. | 01-17-2013 |
20130049217 | SEMICONDUCTOR DEVICE PACKAGING HAVING PRE-ENCAPSULATION THROUGH VIA FORMATION USING DROP-IN SIGNAL CONDUITS - A semiconductor device package having pre-formed and placed through vias and a process for making such a package is provided. One or more signal conduits are placed in a holder that is subsequently embedded in an encapsulated semiconductor device package. The ends of the signal conduits are exposed and the signal conduits are then used as through package vias, providing signal-bearing pathways between interconnects or contacts on the bottom and top of the package. Holders can be provided in a variety of geometries and materials, depending upon the nature of the application. Further, multiple holders with signal conduits can be provided in a single package to provide for more complex interconnect configuration demands in, for example, system-in-a-package applications. | 02-28-2013 |
20130049218 | SEMICONDUCTOR DEVICE PACKAGING HAVING PRE-ENCAPSULATION THROUGH VIA FORMATION - A method for forming signal conduits before encapsulation for incorporation as through vias in a semiconductor device package is provided. One or more signal conduits are formed through photolithography and metal deposition on a metal film or substrate. After removing photoresistive material, the semiconductor device package is built by encapsulating the signal conduits along with any semiconductor die and other parts of the package. The ends of the signal conduits are exposed and the signal conduits can then be used as through vias, providing signal-bearing pathways between interconnects or contacts on the bottom and top of the package, and electrical contacts of the semiconductor die. Using this method, signal conduits can be provided in a variety of geometric placings in the semiconductor device package. A semiconductor device package including the signal conduits made from the above method is also provided. | 02-28-2013 |
20130052777 | BACK SIDE ALIGNMENT STRUCTURE AND MANUFACTURING METHOD FOR THREE-DIMENSIONAL SEMICONDUCTOR DEVICE PACKAGES - A mechanism for accurate alignment of semiconductor package back side interconnect processing is provided. As semiconductor die are placed in position for an encapsulated panel, two or more alignment die having fiducial markings formed on the back, or non-active, side of those die are also placed in the panel. Once all the die and other components have been placed for the panel, the panel is encapsulated using an encapsulant. Excess encapsulant, if any, is removed by a process such as backgrinding. The back grinding process exposes the back side of the alignment die and the fiducial features on those alignment die. The fiducial features on the alignment die can then be used for alignment of backside processing operations on the panel. | 02-28-2013 |
20130078753 | CAPPED DEVICE INTERCONNECT IN A SEMICONDUCTOR PACKAGE - A method for fabricating a thin package that encapsulates a capped MEMS device electrically coupled with one or more encapsulated semiconductor devices is provided. A wafer-level packaging methodology is used in which the capped MEMS device is electrically coupled to a package interconnect, which then allows for electrical coupling to the one or more encapsulated semiconductor devices, as well as external connections. | 03-28-2013 |
20130127030 | SEMICONDUCTOR DEVICE PACKAGING HAVING SUBSTRATE WITH PRE-ENCAPSULATION THROUGH VIA FORMATION - A method for forming through vias in a semiconductor device package prior to package encapsulation is provided. One or more signal conduits are formed through photolithography and metal deposition on a printed circuit substrate having interconnect pads. After removing photoresistive material, the semiconductor device package is built by encapsulating the signal conduits along with any semiconductor die, wire bonding, and other parts of the package. Free ends of each signal conduit are exposed and the signal conduits are used as through vias to provide signal-bearing pathways between connections from a top-mounted package to a printed circuit substrate interconnect and electrical contacts of the semiconductor die or package contacts. Using this method, signal conduits can be provided in a variety of geometric placings on the printed circuit substrate for inclusion in a semiconductor device package. A semiconductor device package incorporating the pre-fabricated through vias is also provided. | 05-23-2013 |
20130154091 | SEMICONDUCTOR DEVICE PACKAGING USING ENCAPSULATED CONDUCTIVE BALLS FOR PACKAGE-ON-PACKAGE BACK SIDE COUPLING - A semiconductor device package having an embedded three-dimensional interconnect structure and a process for making such a package is provided. One or more ball conductors are attached to a major surface of a substrate that provides at least an electrical conduit from the ball conductor to an opposite major surface of the substrate. The substrate can also provide an interconnect between solder balls. The combination of solder balls and substrate is encapsulated in the semiconductor device package. The ends of the signal conduits are exposed on one major surface of the device package, while a portion of the ball conductors is exposed on the opposite major surface of the device package. The ball conductors and signal conduits provide signal-bearing pathways between the major surfaces of the package. Contacts created by the back grinded ball conductors are used to form a package-on-package structure by coupling with contacts from another package. | 06-20-2013 |
20140048946 | SENSOR PACKAGES AND METHOD OF PACKAGING DIES OF VARIOUS SIZES | 02-20-2014 |
20140054783 | STACKED MICROELECTRONIC PACKAGES HAVING SIDEWALL CONDUCTORS AND METHODS FOR THE FABRICATION THEREOF - Methods for fabricating stacked microelectronic packages are provided, as are embodiments of a stacked microelectronic package. In one embodiment, the method includes arranging a plurality of microelectronic device panels in a panel stack. Each microelectronic device panel contains plurality of microelectronic devices and a plurality of package edge conductors extending therefrom. Trenches are created in the panel stack exposing the plurality of package edge conductors, and a plurality of sidewall conductors is formed interconnecting different ones of the package edge conductors exposed through the trenches. The panel stack is then separated into a plurality of stacked microelectronic packages each including at least two microelectronic devices electrically interconnected by at least one of the plurality of sidewall conductors included within the stacked microelectronic package. | 02-27-2014 |
20140054796 | STACKED MICROELECTRONIC PACKAGES HAVING PATTERENED SIDEWALL CONDUCTORS AND METHODS FOR THE FABRICATION THEREOF - Embodiments of a method for fabricating stacked microelectronic packages are provided, as are embodiments of a stacked microelectronic package. In one embodiment, the method includes arranging microelectronic device panels in a panel stack. Each microelectronic device panel includes a plurality of microelectronic devices and a plurality of package edge conductors extending therefrom. Trenches are formed in the panel stack exposing the plurality of package edge conductors. An electrically-conductive material is deposited into the trenches and contacts the plurality of package edge conductors exposed therethrough. The panel stack is then separated into partially-completed stacked microelectronic packages. For at least one of the partially-completed stacked microelectronic packages, selected portions of the electrically-conductive material are removed to define a plurality of patterned sidewall conductors interconnecting the microelectronic devices included within the stacked microelectronic package. | 02-27-2014 |
20140054797 | STACKED MICROELECTRONIC PACKAGES HAVING SIDEWALL CONDUCTORS AND METHODS FOR THE FABRICATION THEREOF - Embodiments of a method for fabricating stacked microelectronic packages are provided, as are embodiments of stacked microelectronic packages. In one embodiment, the method includes producing a partially-completed stacked microelectronic package including a package body having a vertical package sidewall, a plurality microelectronic devices embedded within the package body, and package edge conductors electrically coupled to the plurality of microelectronic devices and extending to the vertical package sidewall. A flowable conductive material is applied on the vertical package sidewall and contacts the package edge conductors. Selected portions of the flowable conductive material are then removed to define, at least in part, electrically-isolated sidewall conductors electrically coupled to different ones of the package edge conductors. | 02-27-2014 |
20140070397 | HIGH POWER SEMICONDUCTOR PACKAGE SUBSYSTEMS - A method and apparatus for incorporation of high power device dies into smaller system packages by embedding metal “coins” having high thermal conductivity into package substrates, or printed circuit boards, and coupling the power device dies onto the metal coins is provided. In one embodiment, the power device die can be attached to an already embedded metal coin in the package substrate or PCB. The power device die can be directly coupled to the embedded metal coin or the power device die can be attached to a metallic interposer which is then bonded to the embedded metal coin. In another embodiment, the die can be attached to the metal coin and then the PCB or package substrate can be assembled to incorporate the copper coin. Active dies are coupled to each other either through wire bonds or other passive components, or using a built-up interconnect. | 03-13-2014 |
20140070415 | MICROELECTRONIC PACKAGES HAVING TRENCH VIAS AND METHODS FOR THE MANUFACTURE THEREOF - Embodiments of a microelectronic package including at least one trench via are provided, as are embodiments of a method for fabricating such a microelectronic package. In one embodiment, the method includes the step of depositing a dielectric layer over a first microelectronic device having a plurality of contact pads, which are covered by the dielectric layer. A trench via is formed in the dielectric layer to expose the plurality of contact pads therethrough. The trench via is formed to include opposing crenulated sidewalls having a plurality of recesses therein. The plurality of contact pads exposed through the trench via are then sputter etched. A plurality of interconnect lines is formed over the dielectric layer, each of which is electrically coupled to a different one of the plurality of contact pads. | 03-13-2014 |
20140369015 | WARP COMPENSATED ELECTRONIC ASSEMBLIES - An electronic panel assembly (EPA) includes one or more electronic devices with primary faces having electrical contacts, opposed rear faces and edges therebetween. The devices are mounted primary faces down in openings in a warp control sheet (WCS). Cured plastic encapsulation is formed at least between lateral edges of the devices and WCS openings. Undesirable panel warping during encapsulation is mitigated by choosing the WCS coefficient of thermal expansion (CTE) to be less than the encapsulation CTE. Thin film insulators and conductors couple electrical contacts on various devices to each other and to external terminals, thereby forming an integrated multi-device EPA. | 12-18-2014 |