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| 20140178578 | Barrier Layers for Silver Reflective Coatings and HPC Workflows for Rapid Screening of Materials for Such Barrier Layers - Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium −25-30%, titanium and aluminum −30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer. | 06-26-2014 |
| 20140268316 | SYSTEMS, METHODS, AND APPARATUS FOR PRODUCTION COATINGS OF LOW-EMISSIVITY GLASS INCLUDING A TERNARY ALLOY - Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1. | 09-18-2014 |
| 20140268317 | High Solar Gain Low-E Panel and Method for Forming the Same - Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. An over-coating layer is formed above the reflective layer. The over-coating layer includes first, second, and third sub-layers. The second sub-layer is between the first and third sub-layers, and the first and third sub-layers include the same material | 09-18-2014 |
| 20140272353 | Color shift of high LSG low emissivity coating after heat treatment - Low emissivity panels can include a protection layer of silicon nitride on a layer of ZnO on a layer of Zn | 09-18-2014 |
| 20140272354 | Method to generate high LSG low-emissivity coating with same color after heat treatment - Low emissivity panels can include a separation layer of Zn | 09-18-2014 |
| 20140272395 | LOW-EMISSIVITY GLASS INCLUDING SPACER LAYERS COMPATIBLE WITH HEAT TREATMENT - Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a first reflective layer, a second reflective layer, and a spacer layer disposed between the first reflective layer and the second reflective layer. In some embodiments, the spacer layer may have a thickness of between about 20 nm and 90 nm. The spacer layer may include a bi-metal oxide that may include tin, and may further include one of zinc, aluminum, or magnesium. The spacer layer may have a substantially amorphous structure. Moreover, the spacer layer may have a substantially uniform composition throughout the thickness of the spacer layer. The low emissivity panel may be configured to have a color change as determined by Rg ΔE (i.e. as determined on the glass side) that is less than about 1.7 in response to an application of a heat treatment to the low emissivity panel. | 09-18-2014 |
| 20140272454 | Barrier Layers for Silver Reflective Coatings and HPC Workflows for Rapid Screening of Materials for Such Barrier Layers - Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium—25-30%, titanium and aluminum—30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer. | 09-18-2014 |
| 20140272455 | Titanium nickel niobium alloy barrier for low-emissivity coatings - A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include a ternary alloy of titanium, nickel and niobium, which showed improvements in overall performance than those from binary barrier results. The percentage of titanium can be between 5 and 15 wt %. The percentage of nickel can be between 30 and 50 wt %. The percentage of niobium can be between 40 and 60 wt %. | 09-18-2014 |
| 20140308528 | SYSTEMS, METHODS, AND APPARATUS FOR PRODUCTION COATINGS OF LOW-EMISSIVITY GLASS - Disclosed herein are systems, methods, and apparatus for forming a low emissivity panel. In various embodiments, a partially fabricated panel may be provided. The partially fabricated panel may include a substrate, a reflective layer formed over the substrate, and a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the substrate and the top dielectric layer. The top dielectric layer may include tin having an oxidation state of +4. An interface layer may be formed over the top dielectric layer. A top diffusion layer may be formed over the interface layer. The top diffusion layer may be formed in a nitrogen plasma environment. The interface layer may substantially prevent nitrogen from the nitrogen plasma environment from reaching the top dielectric layer and changing the oxidation state of tin included in the top dielectric layer. | 10-16-2014 |
| 20140322507 | SYSTEMS, METHODS, AND APPARATUS FOR PRODUCTION COATINGS OF LOW-EMISSIVITY GLASS - Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer. | 10-30-2014 |
| 20150104569 | Barrier Layers for Silver Reflective Coatings and HPC Workflows for Rapid Screening of Materials for Such Barrier Layers - Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium—25-30%, titanium and aluminum—30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer. | 04-16-2015 |
| 20150191815 | Titanium nickel niobium alloy barrier for low-emissivity coatings - A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include a ternary alloy of nickel, titanium, and niobium, which showed improvements in overall performance than those from binary barrier results. The percentage of nickel can be between 5 and 15 wt %. The percentage of titanium can be between 30 and 50 wt %. The percentage of niobium can be between 40 and 60 wt %. | 07-09-2015 |
| 20150191965 | Low-E Panels and Methods for Forming the Same - Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A low-e stack is formed above the transparent substrate. Each of the layers of the low-e stack are formed to have a specific thickness to tune the performance characteristics of the low-e panel. | 07-09-2015 |
| 20150291812 | Low Emissivity Glass Incorporating Phosphorescent Rare Earth Compounds - Methods, and coated panels fabricated from the methods, are disclosed to form multiple coatings, (e.g., one or more infrared reflective layers), with minimal color change before and after heat treatments. The optical properties of the coating (e.g. the transmissivity and the IR emissivity) are generally coupled. In some embodiments, silicate materials are doped with rare earth elements. These doped silicate materials are able to absorb ultra-violet (UV) photons and emit photons in the visible range. This allows the transmissivity to be at least partially decoupled from the IR emissivity of the coated panel, resulting in a larger range of performance. | 10-15-2015 |
| 20150337432 | Barrier Layers for Silver Reflective Coatings and HPC Workflows for Rapid Screening of Materials for Such Barrier Layers - Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium—25-30%, titanium and aluminum—30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer. | 11-26-2015 |
| 20150345005 | Seed layer for low-e applications - Methods, and coated panels fabricated from the methods, are disclosed to form multiple coatings, (e.g., one or more infrared reflective layers), with minimal color change before and after heat treatments. For example, by adding appropriate seed layers between the IR reflective layers and the base oxide layers, the color performance can be maintained regardless of high temperature processes. The optical filler layers can include a metal oxide layer. In some embodiments, the seed layer can include nickel, titanium, and niobium, forming a nickel titanium niobium alloy such as NiTiNb. | 12-03-2015 |
| 20150368152 | Low-E Panels and Methods for Forming the Same - Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A dielectric layer is formed between the transparent substrate and the reflective layer. The dielectric layer includes niobium, tin, and aluminum. | 12-24-2015 |
| Patent application number | Description | Published |
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| 20100038994 | Switched mode power supply - A switched mode power supply is provided. The switched mode power supply includes a transformer, which includes at least one primary winding connected to a DC voltage via a switching element and a secondary winding connected to a load via a rectifier circuit including at least one diode, and at least one piezoelectric fan which generates an air flow at the transformer and/or at the switching element and/or at the diode. The air flow produced can be guided in a targeted manner onto the components to be cooled, with the air flow remaining low and therefore, no contamination by air particles arises. | 02-18-2010 |
| 20100117458 | ELECTRONIC SECURITY FOR A POWER SUPPLY - A security circuit for a power supply feeding a DC system is provided. The security circuit is disposed on an outlet of the power supply. A switch element is disposed between a positive power supply clamp and a positive output clamp towards the DC system. A choke coil is disposed between the switch element and the positive output clamp. The choke coil is connected to an output capacitor on a side connected to the positive output clamp, and a side of the choke coil that is connected to the switch element is connected to a cathode side of a diode that is connected in parallel to the output capacitor. The security circuit also includes a control for the switch element, connecting the switch element in accordance with the power measured in the security circuit. | 05-13-2010 |
| 20110141643 | Electric System - An electrical system having at least one load that is protected by a protective device, where a tripping parameter, i.e., a tripping current of the protective device can be set. A control unit is provided to which a measured current value of the current consumed by the at least one load is supplied, where the control unit generates a limit value, which is provided to the protective device for setting a tripping parameter as a function of the characteristic curve of the measured current value. The control unit thus permits ongoing adjustment of the tripping parameters, i.e., the release current, according to the actual operating conditions. | 06-16-2011 |
| 20130003241 | Electronic Safety Device - A method and electronic safety device including a switching element for disconnecting and/or limiting the current consumption of an electrical load, wherein control commands for the switching element are received through a remote control interface, and wherein the switching element is only switched on or off when the thermal load on the switching element is within a permissible range such that there is no longer any need to provide a dedicated relay in electrical systems for remote-controlled switching operations. | 01-03-2013 |
| 20130119765 | Power Supply and Method for Operating the Power Supply - A power supply, a controller, and a power element, wherein a DC compensation voltage is present at a first output of the power element to which a load having a variable current draw can be connected. A second output of the power element is thereby fed through a current measurement device, wherein a rechargeable battery is connected to the second output. A charging current or discharge current of the rechargeable battery measured by the current measuring device is set by controlling the DC compensating voltage. The charging current or discharge current of the rechargeable battery can thereby be determined even without a dedicated UPS assembly. | 05-16-2013 |
| 20140346870 | Power Supply Unit - A power supply unit having a circuit for uninterrupted power supply comprises a first DC-DC converter arranged on the input side, at least one output configured for outputting an output DC voltage, and at least one first output switching controller. A DC link is arranged between the first DC-DC converter and the at least one output switching controller for regulating the at least one output DC voltage on the output side. The first DC link is connected to an energy storage module. | 11-27-2014 |
| 20150115916 | Control Method for a Power Supply System - A control method for a power supply system having at least two power parts with power outputs connected in parallel, wherein each power part is actuated via a separate control and where at least one first power limit is specified for each control, where the control actuates the allocated power part up to the first power limit in a normal mode, a first drawdown value of the output voltage is specified for each control upon reaching the first power limit, and the respective control regulates the output voltage of the related power part to the first drawdown value upon reaching the first power limit so that the parallel connection of a plurality of power parts without a super-ordinate control is achieved. | 04-30-2015 |
| 20160006351 | Modularly Redundant DC-DC Power Supply Arrangement Having Outputs That Can Be Connected In Parallel - A power supply device for redundantly supplying power to a load comprises a first supply unit, a second supply unit, a first DC-DC converter, a second DC-DC converter, a first output switching controller, and a second output switching controller. The first and second supply units are interconnected. The first output switching controller is connected on the load side of the first DC-DC converter, and the second output switching controller is connected on the load side of the second DC-DC converter. The outputs of the output switching controllers are interconnected. | 01-07-2016 |
