Schricker
Alexander Schricker, Graz AT
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20100058875 | Piezoelectric pressure transducer - To render possible a high-quality, yet cost-effective provision suitable for mass production of a piezoelectric pressure transducer ( | 03-11-2010 |
20110219888 | FORCE-MEASURING RING HAVING AN ANNULAR HOUSING - A force-measuring ring includes an annular housing which contains at least one piezoelectric measuring element, and a pressure transmission element which is attached to the housing via inner and outer circular-annular membrane areas. The inner and outer membrane areas of the force-measuring ring are situated on opposite sides of a symmetry plane defined by the at least one piezoelectric measuring element. | 09-15-2011 |
20140216175 | SENSOR FOR MEASURING PRESSURE AND/OR FORCE - A sensor for measuring pressure and/or force comprises at least one measuring assembly having at least one piezoelectric measuring element ( | 08-07-2014 |
April Schricker, Milpitas, CA US
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20140322887 | Surface Treatment to Improve Resistive-Switching Characteristics - This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a semiconductor device layer to create defects having a deliberate depth profile, one may create multistable memory cells having more consistent electrical parameters. For example, in a resistive-switching memory cell, one may obtain a tighter distribution of set and reset voltages and lower forming voltage, leading to improved device yield and reliability. In at least one embodiment, the depth profile is selected to modulate the type of defects and their influence on electrical properties of a bombarded metal oxide layer and to enhance uniform defect distribution. | 10-30-2014 |
April Schricker, Palo Alto, CA US
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20090272961 | SURFACE TREATMENT TO IMPROVE RESISTIVE-SWITCHING CHARACTERISTICS - This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a semiconductor device layer to create defects having a deliberate depth profile, one may create multistable memory cells having more consistent electrical parameters. For example, in a resistive-switching memory cell, one may obtain a tighter distribution of set and reset voltages and lower forming voltage, leading to improved device yield and reliability. In at least one embodiment, the depth profile is selected to modulate the type of defects and their influence on electrical properties of a bombarded metal oxide layer and to enhance uniform defect distribution. | 11-05-2009 |
20110042639 | MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - In some aspects, a method of forming a memory cell is provided that includes ( | 02-24-2011 |
20110147693 | MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - In some aspects, a memory cell is provided that includes (1) a steering element above a substrate; and (2) a reversible resistance-switching element coupled to the steering element, wherein the reversible resistance-switching element is selectively formed by: (a) forming a material layer on the substrate; (b) etching the material layer; and (c) oxidizing the etched material layer to form a reversible resistance-switching material. Numerous other aspects are provided. | 06-23-2011 |
20120032133 | SURFACE TREATMENT TO IMPROVE RESISTIVE-SWITCHING CHARACTERISTICS - This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a semiconductor device layer to create defects having a deliberate depth profile, one may create multistable memory cells having more consistent electrical parameters. For example, in a resistive-switching memory cell, one may obtain a tighter distribution of set and reset voltages and lower forming voltage, leading to improved device yield and reliability. In at least one embodiment, the depth profile is selected to modulate the type of defects and their influence on electrical properties of a bombarded metal oxide layer and to enhance uniform defect distribution. | 02-09-2012 |
20120217462 | MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - A method of forming a memory cell is provided that includes forming a steering element above a substrate, and forming a reversible resistance-switching element coupled to the steering element. The reversible resistance-switching element includes one or more of TiO | 08-30-2012 |
20120286233 | MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - A memory cell is provided that includes a steering element, a reversible resistance-switching element coupled to the steering element and a silicide-forming metal layer disposed between the steering element and the reversible resistance-switching element. The reversible resistance-switching element includes tantalum, and is formed using a selective deposition process. Numerous other aspects are provided. | 11-15-2012 |
20120315725 | SURFACE TREATMENT TO IMPROVE RESISTIVE-SWITCHING CHARACTERISTICS - This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a semiconductor device layer to create defects having a deliberate depth profile, one may create multistable memory cells having more consistent electrical parameters. For example, in a resistive-switching memory cell, one may obtain a tighter distribution of set and reset voltages and lower forming voltage, leading to improved device yield and reliability. In at least one embodiment, the depth profile is selected to modulate the type of defects and their influence on electrical properties of a bombarded metal oxide layer and to enhance uniform defect distribution. | 12-13-2012 |
20140001430 | Surface Treatment to Improve Resistive-Switching Characteristics | 01-02-2014 |
April Daen Schricker, Fremont, CA US
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20100136341 | Thermometric Carbon Composites - A composition of electrically conductive composites for temperature sensing comprises conductive particles. The composite forms from a suspension. The suspension comprises the particles and solvent, and the particles are conductive particles with aspect ratio larger than one. The conductive composite retains a negative temperature coefficient when in contact with certain specific surfaces. The particles within the composite self align. | 06-03-2010 |
April Dawn Schricker, Eindhoven NL
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20150280076 | LIGHT EMITTING DEVICE INCLUDING A FILTER AND A PROTECTIVE LAYER - A method according to embodiments of the invention includes providing a plurality of LEDs ( | 10-01-2015 |
20150280083 | WAVELENGTH CONVERTED LIGHT EMITTING DEVICE - A structure according to embodiments of the invention includes a plurality of LEDs attached to a mount. A wavelength converting layer is disposed over the LEDs. A transparent layer is disposed over the wavelength converting layer. Reflective material is disposed between neighboring LEDs. | 10-01-2015 |
April Dawn Schricker, Fremont, CA US
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20100081268 | DAMASCENE PROCESS FOR CARBON MEMORY ELEMENT WITH MIIM DIODE - Forming a metal-insulator diode and carbon memory element in a single damascene process is disclosed. A trench having a bottom and a sidewall is formed in an insulator. A first diode electrode is formed in the trench during a single damascene process. A first insulating region comprising a first insulating material is formed in the trench during the single damascene process. A second insulating region comprising a second insulating material is formed in the trench during the single damascene process. A second diode electrode is formed in the trench during the single damascene process. The first insulating region and the second insulating region reside between the first diode electrode and the second diode electrode to form a metal-insulator-insulator-metal (MIIM) diode. A region of carbon is formed in the trench during the single damascene process. At least a portion of the carbon is electrically in series with the MIIM diode. | 04-01-2010 |
April Dawn Schricker, Palo Alto, CA US
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20140345843 | DYNAMIC THERMAL INTERFACE MATERIAL - Aspects of the invention provide compositions that include carbon nanotubes dispersed within nanographite particles, and that have useful thermal properties. Certain compositions have high thermal conductivities (e.g., high thermal conductivities at ambient temperature). Certain compositions have a temperature dependent thermal conductivity that reversibly increases with temperature. Certain compositions are useful for heat transfer and can be used as thermal interface material, for example, in the context of computer and/or power generating devices. | 11-27-2014 |
20150188001 | LED WITH CERAMIC GREEN PHOSPHOR AND PROTECTED RED PHOSPHOR LAYER - A ceramic green wavelength conversion element ( | 07-02-2015 |
David R. Schricker, Princeville, IL US
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20080208393 | Method of controlling a vehicle based on operation characteristics - A method of controlling a vehicle includes determining an operation assigned to the vehicle along at least one segment of a route assigned to the vehicle and determining at least one control parameter of the vehicle based on at least one operation characteristic. The at least one operation characteristic relates to the operation assigned to the vehicle. The at least one control parameter is determined before operating the vehicle on the assigned route. | 08-28-2008 |
David Richard Schricker, Chillicothe, IL US
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20120323616 | METHODS AND SYSTEMS FOR DETERMINING DOWNTIME DRIVERS - A downtime driver determining apparatus is disclosed. The apparatus may have a data collection module configured to collect machine downtime data and work order data from one or more databases, and a downtime identification module configured to identify a period of machine downtime from the machine downtime data. The apparatus may also have a downtime driver identification module configured to identify at least one work order from the work order data for the machine that was completed during the period of machine downtime, the at least one work order identifying at least one component of the machine, and a downtime attribution module configured to attribute at least part of the period of machine downtime to the at least one component of the machine included in the work order. | 12-20-2012 |
Peter Schricker, Marktredwitz DE
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20110045279 | MOLDED BODY HAVING POROUS SURFACE AND METHOD FOR THE PRODUCTION THEREOF - A ceramic formed piece with porous surface and a method for the production of same. | 02-24-2011 |
Thomas P.s. Schricker, Baie D'Urfe CA
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20110319323 | PHARMACEUTICAL COMPOSITION AND METHOD OF USE TO IMPROVE ORGAN FUNCTION - The present document describes a pharmaceutical composition as well as methods to improve organ function using a high dose of insulin and maintaining normal glycemia. Methods of intensive insulin therapy using the pharmaceutical composition are also described. | 12-29-2011 |