Patent application number | Description | Published |
20100072516 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes an active layer formed between an n-type cladding layer and a p-type cladding layer, and a current confining layer having a conductive area through which a current flows to the active layer. The current confining layer includes a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer is formed on and in contact with the first semiconductor layer and has a smaller lattice constant than that of the first semiconductor layer. The third semiconductor layer is formed on and in contact with the second semiconductor layer and has a lattice constant that is smaller than that of the first semiconductor layer and larger than that of the second semiconductor layer. | 03-25-2010 |
20110080929 | SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor laser device includes a substrate | 04-07-2011 |
20110261853 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride semiconductor device includes a first nitride semiconductor layer formed on a substrate, a defect induced layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the defect induced layer, contacting the defect induced layer, and having an opening through which the defect induced layer is exposed. The defect induced layer has a higher crystal defect density than those of the first and second nitride semiconductor layers. | 10-27-2011 |
20110268144 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device includes an active layer | 11-03-2011 |
20130193486 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a second nitride semiconductor layer formed on a first nitride semiconductor layer, and having a larger band gap than the first nitride semiconductor layer; and an electrode filling a recess formed in the first and second nitride semiconductor layers. The first nitride semiconductor layer has a two-dimensional electron gas layer immediately below the second nitride semiconductor layer. The electrode and the second nitride semiconductor layer are in contact with each other at a first contact interface. The electrode and a portion of the first nitride semiconductor layer corresponding to the two-dimensional electron gas layer are in contact with each other at a second contact interface connected below the first contact interface. The first contact interface is formed such that a width of the recess increases upward. The second contact interface is more steeply inclined than the first contact interface. | 08-01-2013 |
20140103459 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a channel layer made of GaN; a barrier layer formed on the channel layer, the bather layer being made of AlGaN and having a larger band gap than the channel layer; a p-type GaN layer selectively formed on the barrier layer; a gate electrode made of ITO on the p-type GaN layer; and a source electrode and a drain electrode on regions of the barrier layer laterally outward of the gate electrode. The width of the gate electrode in the gate length direction is smaller than or equal to the width of the p-type GaN layer in the gate length direction, and the difference between the width of the gate electrode in the gate length direction and the width of the p-type GaN layer in the gate length direction is less than or equal to 0.2 μm. | 04-17-2014 |
20150179741 | SEMICONDUCTOR DEVICE - A parasitic capacitance and a leak current in a nitride semiconductor device are reduced. For example, a 100 nm-thick buffer layer made of AlN, a 2 μm-thick undoped GaN layer, and 20 nm-thick undoped AlGaN having an Al composition ratio of 20% are epitaxially grown in this order on, for example, a substrate made of silicon, and a source electrode and a drain electrode are formed so as to be in ohmic contact with the undoped AlGaN layer. Further, in the undoped GaN layer and the undoped AlGaN layer immediately below a gate wire, a high resistance region, the resistance of which is increased by for example, ion implantation with Ar or the like, is formed, and a boundary between the high resistance region and an element region is positioned immediately below the gate wire. | 06-25-2015 |
20160056245 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a channel layer which is made of In | 02-25-2016 |
20160064376 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a substrate; a nitride semiconductor layer formed on the substrate; a transistor formed on the nitride semiconductor layer, and including a source electrode, a gate electrode, and a drain electrode disposed in this order; and a diode formed on the nitride semiconductor layer, and including an anode electrode and a cathode electrode disposed in this order. The semiconductor apparatus has a transistor/diode pair in which the source electrode, the gate electrode, the drain electrode, the anode electrode, and the cathode electrode are sequentially disposed in this order, and the drain electrode of the transistor and the anode electrode of the diode are connected by a drain/anode common electrode wiring and serve as a common electrode. | 03-03-2016 |