Patent application number | Description | Published |
20090258319 | EXPOSURE METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In an exposure method, an anti-reflection film and a photoresist are stacked in order on the surface of a substrate. A periodic pattern of a pitch P is formed on a pattern surface of a photomask. A medium having a refractive index n is present between a projection lens having a numerical aperture NAp and the substrate. The refractive index, coefficient of extinction and thickness of the anti-reflection film are selected so that the reflectance of exposure light of a wavelength λ at an interface between the photoresist and the anti-reflection film is less than or equal to a desired value when an angle of incidence θ is within a range determined by λ/P−NAp≦n×sin θ≦NAp. The angle of incidence θ is formed to a perpendicular line in the medium by light incident on the surface of the substrate. | 10-15-2009 |
20100035167 | EXPOSURE METHOD, MASK DATA PRODUCING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - An exposure method has irradiating a mask with light based on an exposure performing condition, a first mask pattern and a second mask pattern being formed in the mask, and projecting images of the first mask pattern and second mask pattern onto a wafer through a projection lens, a lower-layer film material and a photoresist being sequentially laminated on the wafer, wherein the exposure performing condition is a condition on which, when exposure is performed on a predetermined exposure condition, the predetermined exposure condition is adjusted such that a difference between a wafer position at which a best focus is obtained for the image of the first mask pattern and a wafer position at which a best focus is obtained for the image of the second mask pattern falls within a predetermined range, the wafer position of the first mask pattern and the wafer position of the second mask pattern being predicted using film thicknesses and optical characteristics of the photoresist and the lower-layer film material. | 02-11-2010 |
20100144148 | METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes designing a resist structure including a film having antireflection function for exposure light and a resist on the film to be formed on a substrate, designing an exposure condition of the resist obtained by exposing and developing the resist such that a resist pattern is finished as designed, obtaining criteria value for estimating influence of a resist pattern upon a dimension or shape of a device pattern, the resist pattern being obtained by exposing the resist under the designed exposure condition and developing the exposed resist, the device pattern being obtained by etching the resist structure using the resist pattern as a mask, determining whether the designed exposure condition is acceptable or not based on the criteria value, and redesigning the exposure condition of the resist without changing the designed resist structure when the designed exposure condition is determined not acceptable. | 06-10-2010 |
20100225890 | METHOD FOR EVALUATING FLARE IN EXPOSURE TOOL - A method for evaluating flare of an exposure tool has measuring a first reference integral exposure amount of illumination light emitted from the light source, and a unit reference integral exposure amount of illumination light emitted from the light source, the first reference integral exposure amount being required for the first evaluation pattern to be developed on the photosensitive film, the unit reference integral exposure amount being required for the first effective exposure region to be developed on the photosensitive film; calculating a first evaluation value by dividing the unit reference integral exposure amount by the first reference integral exposure amount; and evaluating a total flare amount of the illuminating optical system and the projecting optical system, using the first evaluation value. | 09-09-2010 |
20130014587 | ULTRASONIC FLAW DETECTOR AND ULTRASONIC FLAW DETECTING METHODAANM YAMAMOTO; SetsuAACI Yokohama-ShiAACO JPAAGP YAMAMOTO; Setsu Yokohama-Shi JPAANM Miura; TakahiroAACI Yokohama-ShiAACO JPAAGP Miura; Takahiro Yokohama-Shi JPAANM Semboshi; JunAACI Yokohama-ShiAACO JPAAGP Semboshi; Jun Yokohama-Shi JPAANM Ochiai; MakotoAACI Yokohama-ShiAACO JPAAGP Ochiai; Makoto Yokohama-Shi JPAANM Nagai; SatoshiAACI Kawasaki-ShiAACO JPAAGP Nagai; Satoshi Kawasaki-Shi JPAANM Watanabe; KazumiAACI Yokohama-ShiAACO JPAAGP Watanabe; Kazumi Yokohama-Shi JPAANM Mitsuhashi; TadahiroAACI Yokohama-ShiAACO JPAAGP Mitsuhashi; Tadahiro Yokohama-Shi JPAANM Adachi; HiroyukiAACI Machida-ShiAACO JPAAGP Adachi; Hiroyuki Machida-Shi JPAANM Yamamoto; SatoshiAACI Kawaguchi-ShiAACO JPAAGP Yamamoto; Satoshi Kawaguchi-Shi JPAANM Takabayashi; JunichiAACI Yokohama-ShiAACO JPAAGP Takabayashi; Junichi Yokohama-Shi JPAANM Otsuka; MasaruAACI Ota-KuAACO JPAAGP Otsuka; Masaru Ota-Ku JP - An ultrasonic flaw detector including an ultrasonic probe for emitting an ultrasonic wave on an object to be inspected and receiving a reflected ultrasonic wave from the object, a drive element control unit for controlling a plurality of ultrasonic elements to emit an ultrasonic wave on the ultrasonic probe and to control a reflected ultrasonic wave from the ultrasonic probe, and a calculation unit for obtaining, by using a refraction angle of the ultrasonic wave at a time of the ultrasonic wave entering the object, an incident position of the ultrasonic wave on a surface of the object, and a surface shape of a surface of the object at the incident position, the incident angle of the ultrasonic wave entering the incident position, and obtaining a plurality of ultrasonic elements to be driven, based on the incident position and the incident angle. | 01-17-2013 |
Patent application number | Description | Published |
20090062503 | Process for Producing Polyoxymethylene Copolymer - The problem to be solved is to provide a process for producing a polyoxymethylene copolymer in a molding machine with a reduced generation of formaldehyde gas. In a process for continuously producing a polyoxymethylene copolymer comprising a step of melt-kneading a crude polyoxymethylene copolymer at a temperature not lower than the melting point thereof, devolatilizing under reduced pressure the formaldehyde gas generated as a decomposition product, subsequently mixing a formaldehyde scavenger containing a hydrazide compound (A) while keeping the copolymer in a molten state and immediately pelletizing the mixture, a dispersed solution obtained by slurry-dispersing said (A) in a diluent (B) having a melting point lower than temperature (Ta) which is the lower of the melting point and the decomposition temperature of (A), within a temperature range not lower than the melting point of (B) and lower than (Ta) is used as the formaldehyde scavenger. | 03-05-2009 |
20100015458 | OXYMETHYLENE COPOLYMER COMPOSITION FOR STRETCHING MATERIAL, STRETCHING MATERIAL, STRUCTURES, AND PROCESS FOR PRODUCING THE SAME - Provided is an oxymethylene copolymer composition for a stretched material having a high strength and a high elastic modulus, the composition including: an oxymethylene copolymer; and a crosslinkable compound to be blended with the oxymethylene copolymer in an amount of 0.001 to 0.05 part by mass with respect to 100 parts by mass of the oxymethylene copolymer. The present invention also relates to a stretched material obtained by using the oxymethylene copolymer composition. Further, the present invention relates to a structure obtained by the secondary processing of the above stretched material, and a structure obtained by using the above oxymethylene copolymer composition in a bonding layer of the structure. The present invention also relates to a method of producing a structure, the method including: using the oxymethylene copolymer composition in a bonding layer of the structure; and removing a polyalkylene glycol component with water or a solvent. | 01-21-2010 |
20100021752 | METHOD FOR BONDING RESIN MATERIALS CONTAINING OXYMETHYLENE POLYMER AND STRUCTURES - Provided are a method of bonding resin materials for bonding a resin material (X) containing an oxymethylene-based polymer (A) and a resin material (Y), and a structure obtained by the bonding method. The method includes preparing as the resin material (Y) a low-melting-point oxymethylene-based polymer (B) having a melting point lower than that of the oxymethylene-based polymer (A) by 5 to 50° C., or preparing as the resin material (Y) the resin material (X) or another resin material, and providing the low-melting-point oxymethylene-based polymer (B) between the resin material (Y) and the resin material (X) and heating resin materials. | 01-28-2010 |
20100041854 | METHOD FOR ADHESION OF RESIN MATERIAL COMPRISING OXYMETHYLENE POLYMER, AND STRUCTURE - Provided are a method of bonding resin materials for bonding a resin material (X) containing an oxymethylene-based polymer (A) and a resin material (Y), and a structure obtained by the bonding method. The method includes the steps of: preparing as the resin material (Y) an oxymethylene-based polymer composition (B) satisfying the following conditions (1) and (2); or preparing as the resin material (Y) the resin material (X) or another resin material and providing the oxymethylene-based polymer composition (B) between the resin material (Y) and the resin material (X); and heating the resin materials: (1) the oxymethylene-based polymer composition (B) has a melting point lower than that of the oxymethylene-based polymer (A), and a difference in melting point between the composition and the polymer is smaller than 5° C.; and (2) 50% or more of a peak area determined from a peak showing the molten state of the oxymethylene-based polymer composition (B) measured by DSC is present in a temperature region lower than the peak temperature of the oxymethylene-based polymer (A) by 5° C. or more. | 02-18-2010 |
20110171868 | MULTILAYER COMPOSITE FIBER - The present invention has an object of providing a novel multilayer composite fiber using polyacetal mainly derived from methanol, which is a petroleum-independent raw material, and having a low environmental load, and also providing a nonwoven fabric obtained by thermally bonding such fibers. According to the present invention, a multilayer composite fiber comprising a resin containing polylactic acid as a main component and a resin containing polyacetal as a main component, in which the components both form continuous layers in an axial direction of the fiber, and also a nonwoven fabric obtained by thermally bonding such fibers, can be provided. | 07-14-2011 |
20110185527 | POLYACETAL-CONTAINING BRUSH - The object is to provide a brush which does not easily damage metal during contact therewith. The present invention can provide a brush formed using polyacetal-containing filaments, in which the flexural rigidity per filament is 1 to 100 μg·m | 08-04-2011 |
Patent application number | Description | Published |
20100028789 | METHOD OF CONTROLLING EXPOSURE DEVICE, METHOD OF FABRICATING SEMICONDUCTOR, AND PHOTOMASK - A method of controlling exposure device according to an embodiment includes preparing a photomask in which a check pattern is formed, wherein the check pattern comprising a plurality of patterns which have a first diameter and a second diameter and have pattern dimensions being changeable after being transferred according to polarization degree of exposure light are arranged in the second diameter direction, irradiating the photomask with the exposure light having a predetermined polarization degree so as to transfer the check pattern to a transferred object, and measuring the dimensions of the images of the check pattern transferred to the transferred object so as to obtain the polarization degree. | 02-04-2010 |
20110284508 | WELDING SYSTEM AND WELDING METHOD - A welding system has: a welding mechanism, a reception laser light source, a reception optical mechanism, an interferometer, a data recording/analysis mechanism and a data recording/analysis mechanism. The reception laser light source generates reception laser light so as to irradiate the object to be welded with the reception laser light for the purpose of detecting a reflected ultrasonic wave obtained as a result of reflection of a transmission ultrasonic wave. The reception optical mechanism transmits, during or after welding operation, the reception laser light generated from the reception laser light source to the surface of the object to be welded for irradiation while moving, together with the welding mechanism, relative to the object to be welded and collects laser light scattered/reflected at the surface of the object to be welded. | 11-24-2011 |
20110286005 | WELDING INSPECTION METHOD AND APPARATUS THEREOF - A welding inspection method has steps of: generating transmission laser light for generating an ultrasonic wave and transmitting the transmission laser light to an object to be inspected during or after welding operation for irradiation; generating reception laser light for detecting an ultrasonic wave and transmitting the reception laser light to the object to be inspected for irradiation; collecting laser light scattered and reflected at surface of the object to be inspected; performing interference measurement of the laser light and obtaining an ultrasonic signal; and analyzing the ultrasonic signal obtained by the interference measurement. At least one of the transmission laser light generated in the transmission laser light irradiation step and the reception laser light generated in the reception laser light irradiation step is irradiated onto a welded metal part or a groove side surface. | 11-24-2011 |
20130160551 | ULTRASONIC FLAW DETECTION DEVICE AND ULTRASONIC FLAW DETECTION METHOD - According to an embodiment, an ultrasonic flaw detection device is provided with: an ultrasonic probe, which applies ultrasonic waves, by driving a plurality of ultrasonic elements, to a test object to be inspected, and which receives reflected ultrasonic waves from the test object; and an analysis unit, which analyzes the signals of the reflected ultrasonic waves received by the ultrasonic probe, and which calculates the flaw detection results. The analysis unit calculates the flaw detection results using an ultrasonic wave propagation path obtained on the basis of the surface information of the test object having the ultrasonic waves applied thereto, thereby obtaining highly accurate detection results even the surface of the test object is formed in complex shape. | 06-27-2013 |
20150183982 | POLYACETAL RESIN COMPOSITION, COMPOSITE MOLDING USING THE SAME, AND METHOD FOR PRODUCING THE SAME - The invention is a polyacetal resin composition containing a polyacetal resin (A) and a polyethylene resin (B), in which the blending proportion of the polyacetal resin (A) occupying in the total mass of the polyacetal resin (A) and the polyethylene resin (B) is 10 to 90 mass %, the melt flow rate of the polyacetal resin (A) measured at a condition of 190° C. and 2.16 kg load is 30 g/10 minutes or less, and the polyethylene resin (B) consists of a modified polyethylene resin and the modification rate is 0.01 mass % or more based on 100 mass % of the total mass of the polyethylene resin and the melt flow rate of the polyethylene resin (B) measured at a condition of 190° C. and 2.16 kg load is 2.5 g/10 minutes or less. | 07-02-2015 |
Patent application number | Description | Published |
20110250456 | COMPOSITE MOLDED ARTICLE HAVING TWO-LAYER STRUCTURE - The present invention has an object of providing a molded article of a composite structure obtained by bonding a polar thermoplastic resin, especially polyacetal, with another resin in a simple manner. According to the present invention, a molded article of a composite structure obtained by bonding a polar thermoplastic resin and a resin containing an aliphatic ester structure as a main component to each other in the state where at least a face at which both of the materials contact each other is in a melted state can be provided. | 10-13-2011 |
20140349219 | EXPOSURE METHOD, REFLECTION TYPE MASK, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - According to embodiments, an exposure method is provided. In the exposure method, a transmittance of a pellicle is adjusted every position of a mask pattern included in a reflection type mask. And when adjusting the transmittance of the pellicle, a film thickness of the pellicle is adjusted on the basis of a transmittance correction amount. Thereafter, exposure is conducted onto a substrate by using the reflection type mask with the pellicle stuck thereon. | 11-27-2014 |
20150253674 | EXPOSURE APPARATUS, EXPOSURE METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - According to one embodiment, a resist film formed on a processing layer is exposed by irradiating exposure light with a first wavelength belonging to an EUV band and auxiliary light with a second wavelength different from the first wavelength, the auxiliary light being separately generated from the exposure light. | 09-10-2015 |