Patent application number | Description | Published |
20080197413 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer. | 08-21-2008 |
20090121216 | Organic thin film transistor having surface-modified carbon nanotubes - An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage. | 05-14-2009 |
20090206332 | Oxide semiconductor transistor and method of manufacturing the same - An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide. | 08-20-2009 |
20100066208 | APPARATUS AND METHOD FOR CONVERTING ENERGY - Exemplary embodiments relate to an energy converting apparatus and a method for converting energy, which may convert energy of an applied signal into electrical energy. The energy converting apparatus may include at least one nanowire which resonates in response to the applied signal. The resonating nanowire may contact an electrode allowing a current to flow through the electrode and the nanowire by a Schottky contact between the electrode and the nanowire. The method for converting energy may include applying a signal to at least one nanowire to resonate the nanowire, and generating electrical energy through the contact between the resonating nanowire and an electrode. | 03-18-2010 |
20110098486 | Aromatic enediyne derivative, organic semiconductor thin film, electronic device and methods of manufacturing the same - Disclosed are a novel aromatic enediyne derivative, an organic semiconductor thin film using the same, and an electronic device. Example embodiments pertain to an aromatic enediyne derivative which enables the formation of a chemically and electrically stable and reliable semiconductor thin film using a solution process, e.g., spin coating and/or spin casting, at about room temperature when applied to devices, an organic semiconductor thin film using the same, and an electronic device including the organic semiconductor thin film. A thin film having a relatively large area may be formed through a solution process, therefore simplifying the manufacturing process and decreasing the manufacturing cost. Moreover, it is possible to provide an organic semiconductor that may be effectively applied to various fields including organic thin film transistors, electroluminescent devices, solar cells, and memory. | 04-28-2011 |
20110204350 | Composition and organic insulating film prepared using the same - Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened. | 08-25-2011 |
20120028422 | THIN FILM TRANSISTOR FORMED ON FLEXIBLE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided. | 02-02-2012 |
Patent application number | Description | Published |
20080260204 | Apparatus For and Method of Measuring Image - An image measuring apparatus for enhancing an accuracy of an image captured by an optical system and a method thereof are disclosed. The apparatus includes a CCD camera for capturing the object and outputting the captured image, a lamp for generating white light to illuminate a capturing area of the object, an illumination controller for controlling the lamp to be turned on, a piezoelectric actuator for controlling a minute height of the optical system with respect to the object, an image capturing device for acquiring the image captured by the CCD camera, a driving signal generator for outputting a driving signal to the illumination controller and the piezoelectric actuator when an enable signal is generated from the CCD camera, and an image signal processor for estimating height information of the object from data transmitted from the image capturing unit. | 10-23-2008 |
20080266391 | Apparatus for and Method of Measuring Image - An image measuring apparatus for acquiring an image captured by an optical system and a method thereof are disclosed. The apparatus includes a CCD camera for capturing the object and outputting the captured image, a lamp for generating light to illuminate a capturing area of the object, an illumination controller for controlling the lamp to be turned on, a projection grating formed with gratings, a projection grating driving unit for adjusting a distance between the projection grating and the object, an image capturing device for acquiring the image captured by the CCD camera, a driving signal generator for outputting a driving signal to the illumination controller, the projection grating driving unit, and the image capturing unit simultaneously according to an enable signal generated from the CCD camera, and an image signal processor for estimating a three-dimensional image of the object from data transmitted from the image capturing unit. | 10-30-2008 |
20090001294 | Neutron Coincidence Counter for Non-Destructive Accounting for Nuclear Material and the Handling Thereof - A neutron coincidence counter for non-destructive accounting for a nuclear material according to the present invention comprises an outer case, neutron detectors mounted in the outer case while being surrounded by a moderator, and a basket horizontally movable in the outer case so as to be exposed outside the outer case and having a cavity for receiving a sample container therein. Further, a neutron coincidence counter for non-destructive accounting for a nuclear material according to the present invention comprises an outer case, neutron detectors mounted in the outer case while being surrounded by a moderator, a basket movable in the outer case so as to be exposed outside the outer case and having a cavity for receiving a sample container therein, and an external signal analyzer connected to the detectors through an electrically conductive path. Moreover, at least one facile connector of one-touch connection type is mounted on the electrically conductive path for connecting the detectors to the external signal analyzer, resulting in free removal and replacement of wires connected to the connector. | 01-01-2009 |