Patent application number | Description | Published |
20090085043 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy. | 04-02-2009 |
20100090247 | SURFACE TREATMENT METHOD OF GROUP III NITRIDE SEMICONDUCTOR, GROUP III NITRIDE SEMICONDUCTOR, MANUFACTURING METHOD OF THE SAME AND GROUP III NITRIDE SEMICONDUCTOR STRUCTURE - There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity. | 04-15-2010 |
20100099212 | METHOD OF FORMING PATTERN ON GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask. | 04-22-2010 |
20100200867 | VERTICAL STRUCTURE LED DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface. | 08-12-2010 |
20110008924 | METHOD OF FORMING PATTERN ON GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask. | 01-13-2011 |
20120086016 | GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR STRUCTURE - There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity. | 04-12-2012 |
20130020554 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and a Zener diode part disposed on the other region of the light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. | 01-24-2013 |
20130037849 | VERTICAL STRUCTURE LED DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface. | 02-14-2013 |
20130302930 | METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE - A method of manufacturing a gallium nitride (GaN)-based semiconductor light emitting device is provided. A light emitting structure is formed and includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed of a nitride semiconductor containing gallium (Ga) on a substrate. A metal layer is disposed on the p-type semiconductor layer, and a heat treatment is performed to form a gallium(Ga)-metal compound. The gallium(Ga)-metal compound formed on the p-type semiconductor layer is removed. An electrode is disposed on an upper surface of the p-type semiconductor layer from which the gallium(Ga)-metal compound has been removed. The forming of the gallium(Ga)-metal compound includes forming a gallium vacancy in a surface of the p-type semiconductor layer. | 11-14-2013 |
20150084537 | SEMICONDUCTOR LIGHT EMITTING DEVICE - In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer. | 03-26-2015 |