Patent application number | Description | Published |
20120097975 | Nitride-Based Semiconductor Substrates Having Hollow Member Pattern And Methods Of Fabricating The Same - A nitride-based semiconductor substrate may includes a plurality of hollow member patterns arranged on a substrate, a nitride-based seed layer formed on the substrate between the plurality of hollow member patterns, and a nitride-based buffer layer on the nitride-based seed layer so as to cover the plurality of hollow member patterns, wherein the plurality of hollow member patterns contact the substrate in a first direction and both ends of each of the plurality of hollow member patterns are open in the first direction. | 04-26-2012 |
20130105869 | METHOD OF FORMING GROUP III-V MATERIAL LAYER, SEMICONDUCTOR DEVICE INCLUDING THE GROUP III-V MATERIAL LAYER, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR LAYER | 05-02-2013 |
20130105946 | SEMICONDUCTOR DEVICE INCLUDING GROUP III-V COMPOUND SEMICONDUCTOR LAYER, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE | 05-02-2013 |
20130119347 | SEMICONDUCTOR DEVICE INCLUDING GROUP III-V BARRIER AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well. | 05-16-2013 |
20130119507 | SEMICONDUCTOR DEVICE USING GROUP III-V MATERIAL AND METHOD OF MANUFACTURING THE SAME - Semiconductor devices using a group III-V material, and methods of manufacturing the same, include a substrate having a groove, a group III-V material layer filling in the groove and having a height the same as a height of the substrate, a first semiconductor device on the group III-V material layer, and a second semiconductor device on the substrate near the groove. The group III-V material layer is spaced apart from inner side surfaces of the groove. | 05-16-2013 |
20130341595 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - Semiconductor devices including a substrate (e.g., silicon substrate), a multi-layer structure disposed on a portion of the substrate, and at least one electrode disposed on the multi-layer structure and methods of manufacturing the same are provided. The multi-layer structure may include an active layer containing a Group III-V material and a current blocking layer disposed between the substrate and the active layer. The semiconductor device may further include a buffer layer disposed between the substrate and the active layer. In a case that the substrate is a p-type, the buffer layer may be an n-type material layer and the current blocking layer may be a p-type material layer. The current blocking layer may contain a Group III-V material. A mask layer having an opening may be disposed on the substrate so that the multi-layer structure may be disposed on the portion of the substrate exposed by the opening. | 12-26-2013 |
20140191252 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE, OPTICAL APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate. | 07-10-2014 |
20140299885 | SUBSTRATE STRUCTURES AND SEMICONDUCTOR DEVICES EMPLOYING THE SAME - A substrate structure includes a substrate, a nucleation layer on the substrate and including a group III-V compound semiconductor material having a lattice constant that is different from that of the substrate by less than 1%, and a buffer layer on the nucleation layer and including first and second layers, wherein the first and second layers include group III-V compound semiconductor materials having lattice constants that are greater than that of the nucleation layer by 4% or more. | 10-09-2014 |
20150028458 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer. | 01-29-2015 |
20150041764 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - Semiconductor devices including a substrate (e.g., silicon substrate), a multi-layer structure disposed on a portion of the substrate, and at least one electrode disposed on the multi-layer structure and methods of manufacturing the same are provided. The multi-layer structure may include an active layer containing a Group III-V material and a current blocking layer disposed between the substrate and the active layer. The semiconductor device may further include a buffer layer disposed between the substrate and the active layer. In a case that the substrate is a p-type, the buffer layer may be an n-type material layer and the current blocking layer may be a p-type material layer. The current blocking layer may contain a Group III-V material. A mask layer having an opening may be disposed on the substrate so that the multi-layer structure may be disposed on the portion of the substrate exposed by the opening. | 02-12-2015 |
20150061088 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer. | 03-05-2015 |
20150069517 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer including a group III-V material is disposed on the buffer layer. A second layer including a group IV material is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer. | 03-12-2015 |