Patent application number | Description | Published |
20090040845 | Column Path Circuit - A column path circuit includes address transition detectors which detect level transition of page address signals, thereby outputting transition detection signals each having a predetermined enable period, respectively. A detection signal coupler logically operates on the transition detection signals respectively outputted from the address transition detectors, and outputs a signal representing the results of the logical operation. A ready signal generator outputs a strobe ready signal having a predetermined enable period in response to an enabled state of the signal outputted from the detection signal coupler. A strobe signal generator generates a read strobe signal and a page address strobe signal for latch of the page address signals in response to the strobe ready signal. Page address buffers are enabled by the page address strobe signal, and latch the page address signals, thereby buffering the page address signals, a page address decoder which decodes the buffered page address signals respectively outputted from the page address buffers. And, a column selection signal generator outputs column selection signals respectively corresponding to the decoded page address signals in response to the read strobe signal. | 02-12-2009 |
20090323436 | Refresh signal generating circuit - A refresh signal generating circuit of a semiconductor memory device includes a flag signal generator which generates a flag signal in response to a refresh signal and a precharge signal, a clock enable signal buffer which generates first and second buffer enable signals based on an external clock enable signal in response to the flag signal, and a chip select signal buffer which generates an internal chip select signal based on an external chip select signal in response to the flag signal. | 12-31-2009 |
20110050290 | OUTPUT DRIVER CIRCUIT - An output driver circuit includes a pre-driver unit and a first driving unit. The pre-driver unit is configured to generate a driving selection signal and a driving signal from a pre-driving signal in response to a group selection signal and a code signal. The first driving unit is configured to drive a data pad in response to the driving selection signal and the driving signal. | 03-03-2011 |
20110116326 | Refresh Signal Generating Circuit - A refresh signal generating circuit of a semiconductor memory device includes a flag signal generator which generates a flag signal in response to a refresh signal and a precharge signal, a clock enable signal buffer which generates first and second buffer enable signals based on an external clock enable signal in response to the flag signal, and a chip select signal buffer which generates an internal chip select signal based on an external chip select signal in response to the flag signal. | 05-19-2011 |
20120014190 | Refresh Signal Generating Circuit - A refresh signal generating circuit of a semiconductor memory device includes a flag signal generator which generates a flag signal in response to a refresh signal and a precharge signal, a clock enable signal buffer which generates first and second buffer enable signals based on an external clock enable signal in response to the flag signal, and a chip select signal buffer which generates an internal chip select signal based on an external chip select signal in response to the flag signal. | 01-19-2012 |
20120113728 | DATA INPUT CIRCUIT - A data input circuit includes a clock sampling unit, a final clock generation unit, and a write latch signal generation unit. The sampling unit is configured to generate a shifting signal including a pulse generated after a write latency is elapsed, and generate a sampling clock by sampling an internal clock during a burst period from substantially a time when the pulse of the shifting signal is generated. The final clock generation unit is configured to generate a level signal by latching the shifting signal in synchronization with the sampling clock and generate a final clock from the level signal in response to a burst signal. The write latch signal generation unit is configured to generate an enable signal by latching the final clock and generate a write latch signal for latching and outputting aligned data in response to the enable signal. | 05-10-2012 |
20120218832 | DATA TRANSMISSION CIRCUIT - A data transmission circuit includes: a driving voltage generation unit configured to generate a driving voltage having a lower level than an external driving voltage; a switch unit configured to transmit the driving voltage when any one of a write enable signal and a read enable signal is enabled; and a data transmission unit configured to be driven by receiving the driving voltage, transmit a signal of a DQ pad as data in response to the write enable signal, and transmit the data to the DQ pad in response to the read enable signal. | 08-30-2012 |
20130147542 | FUSE CIRCUIT - A fuse circuit includes a programming fuse signal generation block configured to generate parity signals, logic levels of which are determined according to addresses selected among a plurality of addresses with a programming enable signal enabled, and generate programming fuse signals which are programmed in response to the programming enable signal, the plurality of addresses and the parity signals; a corrected pulse generation block configured to correct an error included in the programming fuse signals and generate corrected pulses; and a fuse unit configured to generate fuse signals which are reprogrammed according to the corrected pulses. | 06-13-2013 |
20140145764 | MULTI-PHASE CLOCK GENERATION CIRCUIT - A multi-phase clock generation circuit includes a first clock buffer unit configured to invert and buffer a first internal clock and a second internal clock in response to an external clock, and to generate a third internal clock and a fourth internal clock, and a second clock buffer unit configured to invert and buffer the third internal clock and the fourth internal clock in response to the external clock, and to generate the first internal clock and the second internal clock. | 05-29-2014 |
20140156213 | SEMICONDUCTOR MEMORY DEVICES AND METHODS OF TESTING OPEN FAILURES THEREOF - Semiconductor memory devices are provided. The semiconductor memory device includes an input/output (I/O) drive controller, a data I/O unit and a data transmitter. The data I/O unit selectively drives a first global I/O line and first/second global I/O lines according to the first or second test modes. The data transmitter selectively transfers the data on the first global I/O line onto first and second local I/O lines to store the data on the first global I/O line, and the data on the first and second global I/O lines onto the first and second local I/O lines according to the first or second test modes. | 06-05-2014 |
20140297986 | SEMICONDUCTOR MEMORY DEVICES AND SEMICONDUCTOR SYSTEMS INCLUDING THE SAME - The semiconductor memory device includes an internal flag signal generator and an active information generator. The internal flag signal generator generates a plurality of internal flag signals which are selectively enabled when combination signals of bank address signals and row address signals supplied are inputted from an external device at least a predetermined number of times. The active information generator outputs a flag signal enabled when at least one of the plurality of internal flag signals is enabled in response to a start signal for extracting information on a number of times that a word line is activated and outputs a plurality of bank information signals according to the plurality of internal flag signals. The active information generator generates internal bank address signals and internal row address signals according to the plurality of internal flag signals to refresh a bank. | 10-02-2014 |
20150046723 | SENSE-AMPLIFIER DRIVING DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A sense-amplifier driving device includes: a power-supply driving unit configured to respectively provide a first pull-up voltage and a first pull-down voltage to a pull-up power line and a pull-down power line during a first over-driving time section, and provide the first pull-up voltage to the pull-up power line during a second over-driving time section; an over-driving controller configured to provide a second pull-down voltage lower than the first pull-down voltage to the pull-down power line during the second over-driving time section; and a drive-signal generator configured to generate a drive signal activated for the first and second over-driving time sections so as to control driving of the power-supply driving unit. | 02-12-2015 |