Patent application number | Description | Published |
20140370204 | Vapor Deposition Reactor Using Plasma and Method for Forming Thin Film Using the Same - A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor. | 12-18-2014 |
20150020737 | Atomic Layer Deposition Using Radicals Of Gas Mixture - Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate. | 01-22-2015 |
20150086716 | PRINTING OF COLORED PATTERN USING ATOMIC LAYER DEPOSITION - An apparatus for depositing a layer of material at different thicknesses on a substrate using atomic layer deposition (ALD) to form patterns that exhibit different colors. The patterns may be formed using a printer head that moves in a two-dimensional plane over the substrate along a path while injecting the precursor gases onto the substrate. Patterns are formed on the substrate along the path along which the printer head moves. The refraction of light incident on the layer of material on the substrate causes the deposited material to exhibit different colors. The color change is caused by thin-film interference caused by interference with light waves reflected by the upper and lower boundaries of the deposited material | 03-26-2015 |
20150104574 | FAST ATOMIC LAYER DEPOSITION PROCESS USING SEED PRECURSOR - Embodiments relate to an atomic layer deposition (ALD) process that uses a seed precursor for increased deposition rate. A first reactant precursor (e.g., H | 04-16-2015 |
20150125627 | RADICAL REACTOR WITH INVERTED ORIENTATION - A radical reactor including an elongated structure received within a chamber of a body of the radical reactor. Radicals are generated within a radical chamber formed in the elongated structure by applying a voltage signal across the elongated structure and an electrode extending within the radical chamber. The radicals generated in the radical chamber are routed via a discharge port of the elongated structure and a conduit formed in the body of the radical reactor onto the substrate. The discharge port and the conduit are not aligned so that irradiation generated in the radical chamber is not directed to the substrate | 05-07-2015 |
20150148557 | MOLECULAR LAYER DEPOSITION USING REDUCTION PROCESS - A material is deposited onto a substrate by exposing the substrate to a metal-containing precursor to adsorb metal atoms of the metal-containing precursor to the substrate. The substrate injected with the metal-containing precursor is exposed to an organic precursor to deposit a layer of material by a reaction of the organic precursor with the metal atoms adsorbed to the substrate. The substrate is exposed to radicals of a reducing agent to increase reactivity of the material deposited on the substrate. The radicals of the reducing agent are produced by applying a voltage differential with electrodes to a gas such as hydrogen. The substrate may be exposed to radicals before and/or after exposing the substrate to the organic precursor. The substrate may be sequentially exposed to two or more different organic precursors. The material deposited on the substrate may be a metalcone such as Alucone, Zincone, Zircone, Titanicone, or Nickelcone. | 05-28-2015 |
20150159271 | DEPOSITION OF NON-ISOSTRUCTURAL LAYERS FOR FLEXIBLE SUBSTRATE - A plurality of non-isostructural layers are deposited onto a substrate. An inorganic layer is deposited onto the substrate by adsorbing metal atoms to the substrate. The inorganic layer on the substrate is exposed to a hydrocarbon-containing source precursor to deposit a first hydrocarbon-containing layer by adsorbing the hydrocarbon-containing source precursor onto the inorganic layer. The first hydrocarbon-containing layer on the substrate is exposed to a reactant precursor to increase reactivity of the first hydrocarbon-containing layer on the substrate, and a second hydrocarbon-containing layer is deposited onto the first hydrocarbon-containing layer on the substrate. The process may be repeated to deposit the plurality of layers. The second hydrocarbon-containing layer may have higher hydrocarbon content and may be deposited at a higher deposition rate than the first hydrocarbon-containing layer. | 06-11-2015 |
20150218698 | SPATIAL DEPOSITION OF MATERIAL USING SHORT-DISTANCE RECIPROCATING MOTIONS - Embodiments relate to performing deposition of material on a substrate by causing short-distance reciprocating motions of the substrate. A series of reactors for injecting material onto the substrate is arranged along the length of the substrate in a repeating manner. During each reciprocating motion, the susceptor moves a distance shorter than an entire length of the substrate. Portions of the substrate are injected with materials by a subset of reactors. Since the movement of the substrate is smaller, a linear deposition device including the susceptor may be made smaller. | 08-06-2015 |