| Patent application number | Description | Published |
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| 20090011298 | Hydrogen Production Apparatus, Fuel Cell System and Operation Method Thereof - There are provided a hydrogen production apparatus, a fuel cell system and operation method thereof, which can more reliably suppress degradation due to oxidation of a catalyst in a hydrogen production apparatus even when start-ups and shutdowns are repeated without a purge operation during the shutdowns. The hydrogen production apparatus includes a reforming part, a shift reaction part, and a selective oxidation reaction part having a selective oxidation catalyst bed packed with a selective oxidation catalyst, wherein the hydrogen production apparatus has an oxygen absorbent bed packed with an oxygen absorbent capable of absorbing oxygen and capable of being regenerated by a reducing gas, and the oxygen absorbent bed and the selective oxidation catalyst bed are stacked with the oxygen absorbent bed on the downstream side, and the hydrogen production apparatus has means for opening the downstream of the oxygen absorbent bed to the atmosphere. The fuel cell system has this hydrogen production apparatus. The operation method of this fuel cell system includes opening the downstream of the oxygen absorbent bed to the atmosphere upon shutdown of the fuel cell system, and regenerating the oxygen absorbent using a hydrogen-containing gas during hydrogen production by the hydrogen production apparatus. | 01-08-2009 |
| 20090087705 | REFORMING APPARATUS FOR FUEL CELL - In a reforming apparatus, for use in a fuel cell, for reforming a raw fuel into a hydrogen-rich reformed gas, a reformer generates the reformed gas from the raw fuel. A shift reactor reduces carbon monoxide contained in the reformed gas through a shift reaction. A selective oxidation unit reduces the carbon monoxide contained in the reformed gas that has passed through the shift reactor by performing selective oxidation on the carbon monoxide. A reforming reaction tube houses linearly the reformer, the shift reactor and the selective oxidation unit in this order. A combustion means produces combustion exhaust gas by combusting the raw fuel. An outer casing is placed around the reforming reaction tube, and the outer casing has a larger diameter than that of the reforming reaction tube. A heated flow passage through which the combustion exhaust gas passes to heat the reforming reaction tube is formed between the reforming reaction tube and the outer casing. | 04-02-2009 |
| 20110067303 | REFORMING DEVICE - A reforming apparatus for reforming a raw fuel into a hydrogen-rich reformed gas includes a reformer for generating the reformed gas from the raw fuel, and a steam supply means for supplying the steam to the reformer. The steam supply means has a dry-out heat exchanger that dries out the water by conducting heat exchange with the reformed gas generated when the raw fuel is combusted. The cross-sectional area of passage in the dry-out heat exchanger is larger than that of a pipe connected upstream of the dry-out heat exchanger. | 03-24-2011 |
| 20120237839 | REFORMING APPARATUS FOR FUEL CELL - In a reforming apparatus, for use in a fuel cell, for reforming a raw fuel into a hydrogen-rich reformed gas, a reformer generates the reformed gas from the raw fuel. A shift reactor reduces carbon monoxide contained in the reformed gas through a shift reaction. A selective oxidation unit reduces the carbon monoxide contained in the reformed gas that has passed through the shift reactor by performing selective oxidation on the carbon monoxide. A reforming reaction tube houses linearly the reformer, the shift reactor and the selective oxidation unit in this order. | 09-20-2012 |
| Patent application number | Description | Published |
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| 20140264415 | Group III Nitride Semiconductor Light-Emitting Device and Method for Producing the Same - The present invention provides a Group III nitride semiconductor light-emitting device in which a flat semiconductor layer is grown on a sapphire substrate provided with an uneven shape, and a method for producing the same. When the area ratio R of the flat surface area S on the main surface to the total area K of the sapphire substrate is 0.1 or more to less than 0.5, in formation of the semiconductor layer on the sapphire substrate having an uneven shape on the main surface thereof, at least two types of gases: a raw material gas containing a Group III element and a raw material gas containing Group V element are supplied so as to satisfy the equation 1,000≦Y/(2×R)≦1,200. In the equation, Y is the partial pressure ratio of the raw material gas containing Group V element to the raw material gas containing Group III element. | 09-18-2014 |
| 20150041758 | Group III Nitride Semiconductor Light-Emitting Device - The present invention provides a Group III nitride semiconductor light-emitting device which prevents an increase in driving voltage, and which has low threading dislocation density as a whole. The light-emitting device includes an embossed substrate. The substrate has, on a main surface thereof, a first region in which protrusions are arranged at a small pitch, and second regions in which protrusions are arranged at a large pitch. The second regions correspond to projection areas of a p-pad electrode and an n-pad electrode as viewed through the main surface of the substrate. The first region corresponds to a projection area, as viewed through the main surface of the substrate, of a region in which neither the p-pad electrode nor the n-pad electrode is formed. | 02-12-2015 |
