Patent application number | Description | Published |
20120284989 | Positioning Arrangement For Fitting An Interchangeable Milling Assembly Of A Road-Building Machine - The invention relates to a positioning arrangement for fitting an interchangeable milling assembly of a preset working width below the vertically adjustable chassis of a road milling machine, which chassis is carried on track-laying units. A vehicle carried on a plurality of wheels has a unit for receiving the milling assembly. The positioning arrangement has a handling chassis which can be lengthened in the longitudinal direction and to which the wheels are fixed. In a lowered position, the positioning arrangement, with the milling assembly resting on it, can be driven below the chassis of the road milling machine. In a raised position, the milling assembly can be fitted to the road milling machine. | 11-15-2012 |
20130234493 | Self-Propelled Road Milling Machine For Milling Road Surfaces, In Particular Large-Scale Milling Machine, And Method For Milling Road Surfaces - In a self-propelled road milling machine for milling road surfaces comprising a milling roller housing arranged at the machine frame between the front and rear chassis axles, it is provided that the rear end, as seen in the direction of travel, of the milling roller housing is flush with a height adjustable stripper shield which laterally rests in the milling track of the milling roller and resiliently against a milling edge of the milling track extending orthogonally to the road surface. | 09-12-2013 |
20150076892 | Self-Propelled Road Milling Machine For Processing Road Surfaces, And Method For Processing Road Surfaces - In a self-propelled road milling machine for processing road surfaces, with a machine frame supported by a height-adjustable chassis, with a milling drum mounted to rotate in a milling drum housing, with a milling drum drive for the milling drum, and with a height-adjustable scraper blade in the milling track of the milling drum, said scraper blade closing the milling drum housing towards the rear, it is provided for the following features to be achieved: that the scraper blade, laterally in the milling track of the milling drum, lies resiliently against the milling edge of the milling track, said milling edge extending orthogonal to the road surface. | 03-19-2015 |
Patent application number | Description | Published |
20090035341 | COATING MATERIAL - The invention relates to an antimicrobial and preferably non-cytotoxic coating material and to use of said coating material. | 02-05-2009 |
20110104477 | COATING MATERIAL - The invention relates to an antimicrobial and non-cytotoxic coating material and to uses of said coating material. | 05-05-2011 |
20110189493 | BIOCOMPATIBILITY LAYER AND COATED OBJECTS - The present invention relates to the use of a crosslinked, silicon-containing layer containing, substantially consisting of or consisting of silicon, O, C, H, optionally N which can be produced by plasma polymerization and/or crosslinking of organosilicon liquids by a plasma process and/or UV radiation of a wavelength of less than 250 nm, without using metals of an atomic number of more than 14, as a biocompatible surface, for imparting to a surface or providing a surface with a non-genotoxic effect. The invention also relates to correspondingly coated articles and to processes for the production thereof. | 08-04-2011 |
20120003483 | SCRATCH-RESISTANT AND EXPANDABLE CORROSION PREVENTION LAYER FOR LIGHT METAL SUBSTRATES - The present invention relates to a method for coating the surface of a light metal substrate, including the following steps:
| 01-05-2012 |
Patent application number | Description | Published |
20080206905 | TECHNIQUE FOR PATTERNING DIFFERENTLY STRESSED LAYERS FORMED ABOVE TRANSISTORS BY ENHANCED ETCH CONTROL STRATEGIES - During the patterning of stressed layers having different types of intrinsic stress, the effects of the deposition of a silicon dioxide based etch indicator material between the first and second dielectric layers may be significantly reduced by a controlled etch on the basis of optical measurement data indicating the etch rate and, thus, the performance of the respective etch process. In other cases, highly efficient etch indicator species may be incorporated into the stressed dielectric layers or may be formed on a surface portion thereof with reduced layer thickness, thereby providing an enhanced endpoint detection signal without creating the negative effects of silicon dioxide based indicator layers. In one illustrative embodiment, a stressed silicon, nitrogen and carbon-containing layer may be combined with a stressed silicon and nitrogen-containing layer, wherein the carbon species provides a prominent endpoint detection signal. | 08-28-2008 |
20090166800 | INTERLAYER DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE COMPRISING A DOUBLET STRUCTURE OF STRESSED MATERIALS - By forming a buffer material above differently stressed contact etch stop layers followed by the deposition of a further stress-inducing material, enhanced overall device performance may be accomplished, wherein an undesired influence of the additional stress-inducing layer may be reduced in device regions, for instance, by removing the additional material or by performing a relaxation implantation process. Furthermore, process uniformity during a patterning sequence for forming contact openings may be enhanced by partially removing the additional stress-inducing layer at an area at which a contact opening is to be formed. | 07-02-2009 |
20090273035 | METHOD FOR SELECTIVELY REMOVING A SPACER IN A DUAL STRESS LINER APPROACH - By integrating a spacer removal process into the sequence for patterning a first stress-inducing material during a dual stress liner approach, the sidewall spacer structure for one type of transistor may be maintained, without requiring additional lithography steps. | 11-05-2009 |
Patent application number | Description | Published |
20090140396 | STRESSED INTERLAYER DIELECTRIC WITH REDUCED PROBABILITY FOR VOID GENERATION IN A SEMICONDUCTOR DEVICE BY USING AN INTERMEDIATE ETCH CONTROL LAYER OF INCREASED THICKNESS - By forming an etch control material with increased thickness on a first stressed dielectric layer in a dual stress liner approach, the surface topography may be smoothed prior to the deposition of the second stressed dielectric material, thereby allowing the deposition of an increased amount of stressed material while not contributing to yield loss caused by deposition-related defects. | 06-04-2009 |
20090275200 | TECHNIQUE FOR REDUCING TOPOGRAPHY-RELATED IRREGULARITIES DURING THE PATTERNING OF A DIELECTRIC MATERIAL IN A CONTACT LEVEL OF CLOSELY SPACED TRANSISTORS - In a dual stress liner approach, the surface conditions after the patterning of a first stress-inducing layer may be enhanced by appropriately designing an etch sequence for substantially completely removing an etch stop material, which may be used for the patterning of the second stress-inducing dielectric material, while, in other cases, the etch stop material may be selectively formed after the patterning of the first stress-inducing dielectric material. Hence, the dual stress liner approach may be efficiently applied to semiconductor devices of the 45 nm technology and beyond. | 11-05-2009 |
20090321837 | CONTACT TRENCHES FOR ENHANCING STRESS TRANSFER IN CLOSELY SPACED TRANSISTORS - Scalability of a strain-inducing mechanism on the basis of a stressed dielectric overlayer may be enhanced by forming a single stress-inducing layer in combination with contact trenches, which may shield a significant amount of a non-desired stress component in the complementary transistor, while also providing a strain component in the transistor width direction when the contact material may be provided with a desired internal stress level. | 12-31-2009 |
20130095648 | TECHNIQUE FOR REDUCING TOPOGRAPHY-RELATED IRREGULARITIES DURING THE PATTERNING OF A DIELECTRIC MATERIAL IN A CONTACT LEVEL OF CLOSELY SPACED TRANSISTORS - In a dual stress liner approach, the surface conditions after the patterning of a first stress-inducing layer may be enhanced by appropriately designing an etch sequence for substantially completely removing an etch stop material, which may be used for the patterning of the second stress-inducing dielectric material, while, in other cases, the etch stop material may be selectively formed after the patterning of the first stress-inducing dielectric material. Hence, the dual stress liner approach may be efficiently applied to semiconductor devices of the 45 nm technology and beyond. | 04-18-2013 |
Patent application number | Description | Published |
20080277814 | Polymerizable compositions with acylgermanium compounds - Composition with at least one polymerizable binder and at least one polymerization initiator, which contains at least one acylgermanium compound according to general Formula (I), | 11-13-2008 |
20100041790 | SELF-ETCHING DENTAL MATERIALS BASED ON (METH)ACRYLAMIDE PHOSPHATES - Polymerizable dental material, characterized in that it contains at least one (meth)acrylamide phosphate of the following general formula (I): | 02-18-2010 |
20100240796 | UNIVERSAL DENTAL ADHESION-PROMOTER COMPOSITION - The invention relates to an adhesion-promoter composition for the adhesive joining of metallic or ceramic dental materials to radically curing dental materials, wherein the adhesion-promoter composition contains an alkoxysilane monomer (i), a phosphoric acid ester monomer (ii), a sulphur-containing monomer (iii) and an organic solvent (iv). | 09-23-2010 |
20110217676 | Compositions Containing Cleaning Particles - A composition, containing a carrier medium and particles based on a metal compound with a weight-average particle diameter of 1 nm to 10 μm is useful to clean metal or ceramic surfaces which are part of a dental restoration or of an implant abutment. | 09-08-2011 |
20110275675 | Antimicrobial Dental Materials - Dental material which contains an antimicrobial active ingredient according to general formula (I), | 11-10-2011 |
20120123012 | MICROENCAPSULATED PHOTOINITIATORS AND THE USE THEREOF FOR DENTAL MATERIALS. - The present invention relates to microcapsules composed of a shell of polymers and of a core comprising photoinitiators which exhibit acylphosphine oxides, their derivatives or amine coinitiators or mixtures of these compounds, and also to the preparation of these microcapsules and to their use for dental materials. | 05-17-2012 |
20120208917 | Dental restorative material based on an antimicrobially active compound - The invention relates to a dental restorative material which comprises (a) at least one antimicrobially active compound of Formula (I) | 08-16-2012 |
20120302657 | Polymerizable compositions with improved through-curing depth - Composition which contains polymerizable binder and an initiator according to the following Formula I: | 11-29-2012 |
20140329929 | DENTAL MATERIALS BASED ON MONOMERS HAVING DEBONDING-ON-DEMAND PROPERTIES - The invention relates to a dental restorative material which comprises a thermolabile or photolabile polymerizable compound of Formula I: | 11-06-2014 |
20140371341 | DENTAL MATERIALS BASED ON COMPOUNDS HAVING DEBONDING-ON-DEMAND PROPERTIES - The invention relates to a dental restorative material which comprises a thermolabile compound of Formula I: | 12-18-2014 |