Saki
Akira Saki, Ibaraki-Shi JP
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20150083039 | COATING APPARATUS - Coating apparatus including a supply zone having a supply roll that continuously feeds out a long belt-shaped web, a coating zone having a coating part that applies a coating liquid to a single side of the web fed out from the supply roll, a drying zone that dries a coating liquid film applied to the web to form a coating film, and a winding zone having a winding roll that takes up the web with the coating film by winding. The coating zone forms an entire single coating unit in which one or more feed rolls and the coating part that applies a coating liquid are arranged in a rectangular-cuboidally delimited space, and the coating unit is configured so that the entry and exit of the web is enabled through any of four imaginary planes of the rectangular-cuboidally delimited space that surround the peripheral surface of the feed roll. | 03-26-2015 |
Kazuo Saki, Kanagawa JP
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20100089316 | Plasma treatment apparatus and plasma treatment method - A plasma treatment apparatus includes a susceptor, a silica cover covering a plasma generating area above the susceptor, a chamber housing the susceptor and the silica cover, a gas inlet introducing conditioning gas into the chamber, a plasma generator generating a plasma of the conditioning gas configured to perform conditioning of the silica cover, an analyzing unit configured to monitor changes in a nitride layer on the surface of the silica cover, and a control unit connected to the analyzing unit configured to determine completion of the conditioning based on the change in the nitride layer. | 04-15-2010 |
Kazuo Saki, Kanazawa Ishikawa JP
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20160079405 | SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, and a first insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided over the first semiconductor layer, includes a nitride semiconductor, and contains composition different from the composition of the first semiconductor layer. The first insulating film is provided over the second semiconductor layer, covers at least a part of the first electrode, and contains silicon nitride. The hydrogen concentration in the first insulating film is greater than or equal to 5.0×10 | 03-17-2016 |
Satoru Saki, Ibaraki-Shi JP
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20140234539 | DIE-TYPE COATING DEVICE AND COATING METHOD - A die-type coating device includes a supply roll, a die, a rewinding roll, web widthwise end position detection devices, and layer widthwise end position detection devices. The die includes a pair of inner deckles which adjust a coating width. The inner deckle is arranged at one of two end portions of the die and configured to be easily moved in the die in a longitudinal direction of the die. The die includes a drive device which drives and moves the inner deckles. The drive device is driven on a basis of information on both widthwise end positions of the web detected by the web widthwise end position detection devices and information on both widthwise end positions of the layer of the coating liquid or the coating layer detected by the layer widthwise end position detection devices so that respective positions of the inner deckles relative to the die are changed. | 08-21-2014 |
Yasuhiro Saki, Makinohara-Shi JP
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20160078152 | ANALYZER, ANALYSIS METHOD AND PROGRAM - An analyzer refers to information included in a recorded product drawing, builds a part of or the entire wire harness by drawing corresponding graphic data of each member constituting the wire harness, adds non-corresponding graphic data to the built wire harness, and displays the product drawing. | 03-17-2016 |