Patent application number | Description | Published |
20090197409 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a nonmetallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold comprises a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube. | 08-06-2009 |
20110000425 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus comprises: a reaction chamber to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, the insulator having a cylindrical shape with a closed end facing the closed end of the heating target object; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system to supply at least a source gas into the reaction chamber; and a controller to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate. | 01-06-2011 |
20110056434 | HEAT TREATMENT APPARATUS - Provided is a heat treatment apparatus in which the temperature of an insulator heated by an induction current can be kept low and a susceptor can be efficiently heated. The heat treatment apparatus is provided for growing silicon carbide single crystal films or silicon carbide polycrystal films on a plurality of silicon carbide substrates. The heat treatment apparatus comprises a coil installed around an outside of a reaction tube to generate a magnetic field, a susceptor installed in the reaction tube and configured to be heated by an induction current, and an insulator installed between the susceptor and the reaction tube. The insulator is divided into parts in a circumferential direction, and an insulating material is inserted between the divided parts of the insulator. | 03-10-2011 |
20120214317 | SUBSTRATE PROCESSING APPARATUS AND METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A substrate processing apparatus includes a processing chamber configured to process a plurality of substrates, a substrate holder accommodated within the processing chamber and configured to hold the substrates in a vertically spaced-apart relationship, a thermal insulation portion configured to support the substrate holder from below within the processing chamber, a heating unit provided to surround a substrate accommodating region within the processing chamber, and a gas supply system configured to supply a specified gas to at least a thermal insulation portion accommodating region within the processing chamber. | 08-23-2012 |
20150152554 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM - A substrate processing apparatus capable of suppressing generation of by-products in a buffer space in even a single-wafer apparatus using the buffer space, and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a process chamber including a placement unit having a placing surface whereon a substrate is placed, a shower head including a buffer chamber and installed at upstream side of the process chamber, a gas supply system configured to alternately supply at least two types of gases into the process chamber via the buffer chamber of the shower head, and a heating unit configured to heat the buffer chamber to a first temperature and the process chamber to a second temperature which is higher than the first temperature while the at least two types of gases are supplied via the gas supply system. | 06-04-2015 |
20150184301 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus capable of suppressing the difference between temperatures of a susceptor and the shower head. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate placement device disposed in the process chamber, the substrate placement device comprising a substrate placement surface where the substrate is placed and a first heater; a shower head disposed opposite to the substrate placement surface, the shower head comprising a second heater and an opposing surface facing the substrate placement surface; a processing gas supply system configured to supply a processing gas for processing the substrate placed on the substrate placement surface into the process chamber via the shower head; an exhaust system configured to evacuate an inner atmosphere of the process chamber; and a controller configured to control outputs of the first heater and the second heater. | 07-02-2015 |
20150187610 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A substrate processing apparatus includes a common pipe connected to a process container wherethrough a first and second process gases flow; a buffer unit connected to an upstream side of the common pipe and having a width greater than a diameter of the common pipe; a first supply pipe wherethrough the first process gas flows, connected to a first surface of the buffer unit where the common pipe is connected or a second surface of the buffer unit opposite to the first surface; and a second supply pipe wherethrough the second process gas flows, connected to the first or second surface. Each of the first and second supply pipes is installed outer than the common pipe, and a distance between the first and second surfaces is shorter than a distance between a center axis of the common pipe and that of the first or second supply pipe. | 07-02-2015 |
20150307988 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND COMPUTER-READABLE RECORDING MEDIUM - A substrate processing apparatus includes: a substrate mounting table on which a substrate is mounted; an inert gas supply part configured to supply an inert gas on a surface of the substrate from an upper side of the substrate mounting table at a lateral side of the processing gas supply part; and a plurality of gas exhaust parts configured to exhaust a gas supplied on the surface of the substrate to an upper side, between the processing gas supply part and the inert gas supply part. | 10-29-2015 |
Patent application number | Description | Published |
20110204036 | HEAT TREATMENT APPARATUS - Provided is a heat treatment apparatus having a temperature detection unit installed outside a reaction chamber and capable of preventing a process gas from contacting the temperature detection unit to form a film and improving reliability and reproduction of a measurement value of the temperature detection unit. The heat treatment apparatus for growing a single crystalline film or polycrystalline films on a plurality of substrates includes a boat configured to hold the plurality of substrates, a cylindrical heat generating material ( | 08-25-2011 |
20120067869 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus capable of maintaining a temperature of a furnace port part at a heat-resistant temperature or less of each member constituting the furnace part. The substrate processing apparatus includes a process chamber configured to process a plurality of substrates vertically stacked at predetermined intervals; a substrate retainer configured to hold the plurality of substrates in the process chamber; and a first heat exchanger installed in the process chamber to support the substrate retainer from a lower portion of the substrate retainer, and configured to perform a heat exchange with a gas flowing in a downward direction from a side of the substrate retainer in the process chamber, wherein the first heat exchanger includes a hollow cylindrical insulating tube vertically extending in the downward direction and an insulating plate installed in the insulating tube, and regions in the insulating tube over and under the insulating plate are spatially connected to each other. | 03-22-2012 |
20120156886 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Production efficiency of a substrate (in particular, a substrate on which a SiC epitaxial film is formed) is improved and formation of the film inside a gas supply port is suppressed. This is accomplished by a substrate processing apparatus including a reaction chamber configured to accommodate a plurality of substrates | 06-21-2012 |
20120220108 | SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SUBSTRATE - When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates. | 08-30-2012 |
20130042803 | Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - A substrate processing apparatus includes: a process chamber having an object to be heated therein and configured to process a plurality of substrates; a substrate holder configured to hold the substrates with an interval therebetween in a vertical direction in the process chamber; a first heat exchange unit supporting the substrate holder from a lower side thereof in the process chamber and configured to perform a heat exchange with a gas in the process chamber; a second heat exchange unit provided in the process chamber, the second heat exchange unit being horizontally spaced apart from the first heat exchange unit with a gap therebetween and being configured to perform a heat exchange with the gas in the process chamber; and an induction heating unit configured to subject the object to be heated to an induction heating from an outer side of the object to be heated. | 02-21-2013 |
20130330930 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A substrate processing apparatus includes: a processing chamber that accommodates a substrate; a heating portion that is provided so as to surround a accommodating region of the substrate within the processing chamber; a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the accommodating region of the substrate; and a gas heating mechanism that is provided inside the heating portion and that supplies the processing gas from an upstream side of the gas nozzle into the gas nozzle. A ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle. | 12-12-2013 |
20150152551 | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium - Provided are a substrate processing apparatus, a method of manufacturing a semiconductor device and a non-transitory computer-readable recording medium. The substrate processing apparatus includes a process chamber configured to process a substrate; a gas supply unit including gas supply holes configured to independently supply a process gas for processing the substrate to each of a central portion of the substrate and a peripheral portion of the substrate in the process chamber; an exhaust unit configured to exhaust an inside of the process chamber; and a control unit configured to control the gas supply unit to supply the process gas to the central portion of the substrate after the process gas is supplied to the peripheral portion of the substrate through the gas supply unit. | 06-04-2015 |