Sabba
Ariel Sabba, Karmiel IL
Patent application number | Description | Published |
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20140359330 | REDUCED POWER MODE OF A CACHE UNIT - In an embodiment, a processor includes a plurality of cores and a cache unit reserved for a first core of the plurality of cores. The cache unit may include a first cache slice, a second cache slice, and power logic to switch operation of the cache unit between a first operating mode and a second operating mode. The first operating mode may include use of both the first cache slice and the second cache slice. The second operating mode may include use of the first cache slice and disabling the second cache slice. Other embodiments are described and claimed. | 12-04-2014 |
20140380081 | Restricting Clock Signal Delivery In A Processor - In an embodiment, a processor includes a core to execute instructions, where the core includes a clock generation logic to receive and distribute a first clock signal to a plurality of units of the core, a restriction logic to receive a restriction command and to reduce delivery of the first clock signal to at least one of the plurality of units. The restriction logic may cause the first clock signal to be distributed to the plurality of units at a lower frequency than a frequency of the first clock signal. Other embodiments are described and claimed. | 12-25-2014 |
Yizhak Sabba, Castro Valley, CA US
Patent application number | Description | Published |
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20100018553 | METHOD AND APPARATUS FOR SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATES USING SEQUENTIAL CHEMICAL APPLICATIONS - A system and method for removing polymer residue from around a metal gate structure formed on a surface of a substrate during a post-etch cleaning operation includes determining a plurality of process parameters associated with the metal gate structure and the polymer residue to be removed. A plurality of fabrication layers define the metal gate structure and the process parameters define characteristics of the fabrication layers and the polymer residue. A first cleaning chemistry and second cleaning chemistry are identified and a plurality of application parameters associated with the first and second cleaning chemistries are defined based on the process parameters. The first and second application chemistries are applied sequentially in a controlled manner using the application parameters to substantial remove the polymer residue while preserving the structural integrity of the gate structure. | 01-28-2010 |
20140116476 | Systems for Surface Treatment of Semiconductor Substrates using Sequential Chemical Applications - Systems for removing post etch polymer residue from etched surface includes a first proximity head to introduce a first cleaning chemistry as a first meniscus to a portion of the surface of the substrate so as to cover a length that extends to at least a diameter of the substrate and a first width that is less than the diameter of the substrate. A second proximity head is configured to introduce a second cleaning chemistry as a second meniscus to the portion so as to cover the length that extends to the diameter and a second width that is less than the diameter of the substrate. A substrate supporting device equipped with a motor coupled to a computing system is used to move the substrate supporting device under the first proximity head at a first linear speed and under the second proximity head at a second linear speed. | 05-01-2014 |
Yizhak T. Sabba, Castro Valley, CA US
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20100229890 | Method of Particle Contaminant Removal - Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface. The viscoelastic material along with at least some of the particle contaminants is removed from the first area of the surface while the viscoelastic material is exhibiting solid-like characteristics. | 09-16-2010 |