Patent application number | Description | Published |
20130296073 | GOLF BALL - The invention provides a golf ball having a core and a cover of at least one layer. The core has a cross-sectional hardness which, letting D (mm) be the radius of the core, O be the JIS-C hardness at a center of the core, P be the JIS-C hardness at a position 25% of D from the core center, Q be the JIS-C hardness at a position 55% of D mm from the core center, and T be the JIS-C hardness at a position 85% of D from the core center, satisfies the formulas (1) P−O≦4, (2) Q−O≦5, and (3) T−Q≧10. | 11-07-2013 |
20130296075 | GOLF BALL - The invention provides a golf ball having a core and a cover of at least one layer. The cover includes an outermost layer and at least one intermediate layer interposed between the outermost layer and the core. The core has a cross-sectional hardness which, letting R (mm) be the radius of the core, A be the JIS-C hardness at the center of the core, B be the JIS-C hardness at a position R/3 mm from the core center, C be the JIS-C hardness at a position R/1.8 mm from the core center, D be the JIS-C hardness at a position R/1.5 mm from the core center, and E be the JIS-C hardness at the surface of the core, satisfies formulas (1) B−A11-07-2013 | |
20130296076 | GOLF BALL - The invention provides a golf ball having a core and a cover of at least one layer. The core has a cross-sectional hardness which, letting R (mm) be the radius of the core, A be the JIS-C hardness at a center of the core, B be the JIS-C hardness at a position R/3 mm from the core center, C be the JIS-C hardness at a position R/1.8 mm from the core center, D be the JIS-C hardness at a position R/1.5 mm from the core center, and E be the JIS-C hardness at a surface of the core, satisfies the formulas (1) B−A11-07-2013 | |
20130296077 | GOLF BALL - The invention provides a golf ball having a core and a cover of at least one layer. The cover includes an outermost layer and at least one intermediate layer interposed between the outermost layer and the core. The core has a cross-sectional hardness which, letting R (mm) be the radius of the core, A be the JIS-C hardness at the center of the core, B be the JIS-C hardness at a position R/3 mm from the core center, C be the JIS-C hardness at a position R/1.8 mm from the core center, D be the JIS-C hardness at a position R/1.5 mm from the core center, and E be the JIS-C hardness at the surface of the core, satisfies formulas (1) B−A11-07-2013 | |
20140100059 | GOLF BALL - The invention provides a golf ball having a core and ah cover of at least one layer. The core has a cross-sectional hardness which, letting R (mm) be the radius of the core, A be the JIS-C hardness at a center of the core, B be the JIS-C hardness at a position R/3 mm from the core center, C be the JIS-C hardness at a position R/1.8 mm from the core center, D be the JIS-C hardness at a position R/1.3 mm from the core center, and E be the JIS-C hardness at a surface of the core, satisfies the formulas (1) D−C≧7, (2) C−B≦7, (3) (D−C)−(C−B)≧7, and (4) E−A≧16. | 04-10-2014 |
Patent application number | Description | Published |
20140346529 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor-device manufacturing method of the present invention includes a step of selectively implanting impurity ions into a surface of an SiC semiconductor layer and forming impurity regions and a step of activating the impurity ions by annealing the SiC semiconductor layer at a temperature of 1400° C. or more when the surface of the SiC semiconductor layer is covered with an insulating film. | 11-27-2014 |
20150034971 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - [Problem] To provide an SiC semiconductor device, with which stabilization of high-temperature operation can be achieved by decreasing mobile ions in a gate insulating film, and a method for manufacturing the SiC semiconductor device. | 02-05-2015 |
20150123148 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - [Problem] To provide a semiconductor device in which the surface of a metal electrode arranged on the outermost surface can be made flat or smooth, and a method for producing said semiconductor device. | 05-07-2015 |
20150214354 | SEMICONDUCTOR DEVICE - This semiconductor device includes: a semiconductor layer having a structure in which a drain layer of a first conductivity type, a channel layer of a second conductivity type, and a source layer of a first conductivity type are layered in the stated order, the source layer being exposed on the outer surface of the semiconductor layer; a gate trench that passes through the source layer and through the channel layer from the outer surface of the semiconductor layer, the deepest section of the gate trench reaching the drain layer; a gate insulating film formed on the inside surface of the gate trench, the gate insulating film being formed correspondingly with respect to the outer surface of the semiconductor layer; and a gate electrode embedded inside the gate trench interposed by the gate insulating layer. A portion of the gate insulating film that abuts the outer surface of the semiconductor layer is thicker than a portion that abuts the channel layer at a side surface of the gate trench. | 07-30-2015 |
20150214355 | SEMICONDUCTOR DEVICE - The semiconductor device includes: a semiconductor layer in which a trench is formed having a side surface and a bottom surface; a second conductivity-type layer formed on the semiconductor layer on the side surface and the bottom surface of the trench; a first conductivity-type layer formed on the semiconductor layer so as to contact the second conductivity-type layer; a first electrode electrically connected to the first conductivity-type layer; a second electrode embedded in the trench and electrically connected to the second conductivity-type layer; and a barrier-forming layer which is arranged between the second electrode and the side surface of the trench and which, between said barrier-forming layer and the second conductivity-type layer, forms a potential barrier higher than the potential barrier between the second conductivity-type layer and the second electrode. | 07-30-2015 |
20150295079 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - [Problem] To provide a semiconductor device wherein withstand voltage of a gate insulating film at the upper edge of a trench is improved, and a method for manufacturing the semiconductor device. | 10-15-2015 |